GB1551403A - Method of manufacturing single crystals of gallium nitride - Google Patents

Method of manufacturing single crystals of gallium nitride

Info

Publication number
GB1551403A
GB1551403A GB2407776A GB2407776A GB1551403A GB 1551403 A GB1551403 A GB 1551403A GB 2407776 A GB2407776 A GB 2407776A GB 2407776 A GB2407776 A GB 2407776A GB 1551403 A GB1551403 A GB 1551403A
Authority
GB
United Kingdom
Prior art keywords
gallium nitride
single crystals
manufacturing single
manufacturing
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2407776A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1551403A publication Critical patent/GB1551403A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB2407776A 1975-06-13 1976-06-10 Method of manufacturing single crystals of gallium nitride Expired GB1551403A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7518581A FR2313976A1 (en) 1975-06-13 1975-06-13 PROCESS FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALS AND SINGLE CRYSTALS OBTAINED BY IMPLEMENTING THIS PROCESS

Publications (1)

Publication Number Publication Date
GB1551403A true GB1551403A (en) 1979-08-30

Family

ID=9156506

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2407776A Expired GB1551403A (en) 1975-06-13 1976-06-10 Method of manufacturing single crystals of gallium nitride

Country Status (4)

Country Link
JP (1) JPS51151299A (en)
DE (1) DE2624958C3 (en)
FR (1) FR2313976A1 (en)
GB (1) GB1551403A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2326160A (en) * 1997-06-11 1998-12-16 Hitachi Cable Making group III metal nitride crystals; crystal growth methods
US6273948B1 (en) 1997-06-05 2001-08-14 Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk Method of fabrication of highly resistive GaN bulk crystals

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL173917B1 (en) * 1993-08-10 1998-05-29 Ct Badan Wysokocisnieniowych P Method of obtaining a crystalline lamellar structure
WO1997013891A1 (en) * 1995-10-13 1997-04-17 Centrum Badan Wysokocisnieniowych METHOD OF MANUFACTURING EPITAXIAL LAYERS OF GaN OR Ga(A1,In)N ON SINGLE CRYSTAL GaN AND MIXED Ga(A1,In)N SUBSTRATES
WO1999034037A1 (en) * 1997-12-25 1999-07-08 Japan Energy Corporation Process for the preparation of single crystals of compound semiconductors, equipment therefor, and single crystals of compound semiconductors
JP5348123B2 (en) * 1999-06-09 2013-11-20 株式会社リコー Crystal manufacturing equipment
JP5082213B2 (en) * 2004-08-20 2012-11-28 三菱化学株式会社 Metal nitride and method for producing metal nitride
JP2010042976A (en) * 2008-07-16 2010-02-25 Sumitomo Electric Ind Ltd METHOD FOR GROWING GaN CRYSTAL

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6273948B1 (en) 1997-06-05 2001-08-14 Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk Method of fabrication of highly resistive GaN bulk crystals
GB2326160A (en) * 1997-06-11 1998-12-16 Hitachi Cable Making group III metal nitride crystals; crystal growth methods
GB2326160B (en) * 1997-06-11 1999-11-03 Hitachi Cable Nitride crystal fabricating method

Also Published As

Publication number Publication date
FR2313976A1 (en) 1977-01-07
DE2624958B2 (en) 1980-01-31
DE2624958C3 (en) 1980-09-25
JPS51151299A (en) 1976-12-25
DE2624958A1 (en) 1976-12-23

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Legal Events

Date Code Title Description
CSNS Application of which complete specification have been accepted and published, but patent is not sealed