JPS5265719A - Producing method of silicon single crystals - Google Patents
Producing method of silicon single crystalsInfo
- Publication number
- JPS5265719A JPS5265719A JP14367475A JP14367475A JPS5265719A JP S5265719 A JPS5265719 A JP S5265719A JP 14367475 A JP14367475 A JP 14367475A JP 14367475 A JP14367475 A JP 14367475A JP S5265719 A JPS5265719 A JP S5265719A
- Authority
- JP
- Japan
- Prior art keywords
- silicon single
- single crystals
- producing method
- producing
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14367475A JPS5265719A (en) | 1975-11-28 | 1975-11-28 | Producing method of silicon single crystals |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14367475A JPS5265719A (en) | 1975-11-28 | 1975-11-28 | Producing method of silicon single crystals |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5265719A true JPS5265719A (en) | 1977-05-31 |
JPS5617315B2 JPS5617315B2 (en) | 1981-04-21 |
Family
ID=15344285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14367475A Granted JPS5265719A (en) | 1975-11-28 | 1975-11-28 | Producing method of silicon single crystals |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5265719A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55137867U (en) * | 1979-03-23 | 1980-10-01 | ||
JPS57129898A (en) * | 1980-12-19 | 1982-08-12 | Siemens Ag | Crucible-free zone melting process |
US4921026A (en) * | 1988-06-01 | 1990-05-01 | Union Carbide Chemicals And Plastics Company Inc. | Polycrystalline silicon capable of yielding long lifetime single crystalline silicon |
JP2013103874A (en) * | 2011-11-11 | 2013-05-30 | Yutaka Kamaike | Silicon and method for manufacturing the same |
-
1975
- 1975-11-28 JP JP14367475A patent/JPS5265719A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55137867U (en) * | 1979-03-23 | 1980-10-01 | ||
JPS57129898A (en) * | 1980-12-19 | 1982-08-12 | Siemens Ag | Crucible-free zone melting process |
JPH0348159B2 (en) * | 1980-12-19 | 1991-07-23 | Siemens Ag | |
US4921026A (en) * | 1988-06-01 | 1990-05-01 | Union Carbide Chemicals And Plastics Company Inc. | Polycrystalline silicon capable of yielding long lifetime single crystalline silicon |
JP2013103874A (en) * | 2011-11-11 | 2013-05-30 | Yutaka Kamaike | Silicon and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JPS5617315B2 (en) | 1981-04-21 |
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