JPS51149597A - Single crystal of ferroodielectric material and method of growth thereof - Google Patents

Single crystal of ferroodielectric material and method of growth thereof

Info

Publication number
JPS51149597A
JPS51149597A JP51063678A JP6367876A JPS51149597A JP S51149597 A JPS51149597 A JP S51149597A JP 51063678 A JP51063678 A JP 51063678A JP 6367876 A JP6367876 A JP 6367876A JP S51149597 A JPS51149597 A JP S51149597A
Authority
JP
Japan
Prior art keywords
ferroodielectric
growth
single crystal
crystal
ferroodielectric material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51063678A
Other languages
Japanese (ja)
Inventor
Ibu Boniooru Jiyan
Furuuri Ibu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Publication of JPS51149597A publication Critical patent/JPS51149597A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20Controlling or regulating
    • C30B15/22Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/30Niobates; Vanadates; Tantalates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Hard Magnetic Materials (AREA)
  • Soft Magnetic Materials (AREA)
  • Inorganic Insulating Materials (AREA)
JP51063678A 1975-06-06 1976-06-02 Single crystal of ferroodielectric material and method of growth thereof Pending JPS51149597A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7517758A FR2313778A1 (en) 1975-06-06 1975-06-06 PROCESS FOR ELABORATING A MONOCRISTAL FROM A FERROELECTRIC MATERIAL

Publications (1)

Publication Number Publication Date
JPS51149597A true JPS51149597A (en) 1976-12-22

Family

ID=9156153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51063678A Pending JPS51149597A (en) 1975-06-06 1976-06-02 Single crystal of ferroodielectric material and method of growth thereof

Country Status (8)

Country Link
JP (1) JPS51149597A (en)
BE (1) BE841964A (en)
DE (1) DE2624406A1 (en)
FR (1) FR2313778A1 (en)
GB (1) GB1506799A (en)
IT (1) IT1076907B (en)
NL (1) NL7605711A (en)
SE (1) SE7606374L (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100605125B1 (en) * 2005-05-13 2006-07-28 재단법인서울대학교산학협력재단 Rudder of a ship with gap flow stopper between horn and rudder

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2526449B1 (en) * 1982-05-04 1985-07-05 Commissariat Energie Atomique METHOD AND DEVICE FOR MANUFACTURING A SINGLE CRYSTAL, FREE OF ANY CONSTRAINT, OF A FERROELECTRIC COMPOUND WITH A CRYSTALLINE STRUCTURE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100605125B1 (en) * 2005-05-13 2006-07-28 재단법인서울대학교산학협력재단 Rudder of a ship with gap flow stopper between horn and rudder

Also Published As

Publication number Publication date
IT1076907B (en) 1985-04-27
GB1506799A (en) 1978-04-12
SE7606374L (en) 1976-12-07
DE2624406A1 (en) 1976-12-16
FR2313778B1 (en) 1979-04-27
NL7605711A (en) 1976-12-08
FR2313778A1 (en) 1976-12-31
BE841964A (en) 1976-11-19

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