DE69027644T2 - Verfahren zur Herstellung eines bipolaren Transistors - Google Patents
Verfahren zur Herstellung eines bipolaren TransistorsInfo
- Publication number
- DE69027644T2 DE69027644T2 DE69027644T DE69027644T DE69027644T2 DE 69027644 T2 DE69027644 T2 DE 69027644T2 DE 69027644 T DE69027644 T DE 69027644T DE 69027644 T DE69027644 T DE 69027644T DE 69027644 T2 DE69027644 T2 DE 69027644T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- bipolar transistor
- bipolar
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8921262A GB2236901A (en) | 1989-09-20 | 1989-09-20 | A method of manufacturing a semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69027644D1 DE69027644D1 (de) | 1996-08-08 |
DE69027644T2 true DE69027644T2 (de) | 1997-01-16 |
Family
ID=10663360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69027644T Expired - Fee Related DE69027644T2 (de) | 1989-09-20 | 1990-09-14 | Verfahren zur Herstellung eines bipolaren Transistors |
Country Status (6)
Country | Link |
---|---|
US (1) | US5023192A (de) |
EP (1) | EP0421507B1 (de) |
JP (1) | JPH0727915B2 (de) |
KR (1) | KR910007162A (de) |
DE (1) | DE69027644T2 (de) |
GB (1) | GB2236901A (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5227317A (en) * | 1989-04-21 | 1993-07-13 | Hitachi, Ltd. | Method of manufacturing semiconductor integrated circuit bipolar transistor device |
JPH05226352A (ja) * | 1992-02-17 | 1993-09-03 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
WO1994016461A1 (en) * | 1993-01-04 | 1994-07-21 | Vlsi Technology, Inc. | Cmos locos isolation for self-aligned npn bjt in a bicmos process |
JP2606648B2 (ja) * | 1993-03-19 | 1997-05-07 | 日本電気株式会社 | バイポーラトランジスタ及びその製造方法 |
US5444003A (en) * | 1993-06-23 | 1995-08-22 | Vlsi Technology, Inc. | Method and structure for creating a self-aligned bicmos-compatible bipolar transistor with a laterally graded emitter structure |
US5866462A (en) * | 1995-09-29 | 1999-02-02 | Analog Devices, Incorporated | Double-spacer technique for forming a bipolar transistor with a very narrow emitter |
KR100245813B1 (ko) * | 1997-05-28 | 2000-03-02 | 윤종용 | 자기정합형 더블 폴리실리콘 바이폴라 트랜지스터및 그의 제조방법 |
FR2776828B1 (fr) * | 1998-03-31 | 2003-01-03 | Sgs Thomson Microelectronics | Region de base-emetteur d'un transistor bipolaire submicronique |
KR100486265B1 (ko) * | 2002-09-19 | 2005-05-03 | 삼성전자주식회사 | 바이폴라 트랜지스터 및 그 제조 방법 |
DE602005023125D1 (de) * | 2005-04-27 | 2010-10-07 | St Microelectronics Srl | Vertikaler MOSFET Transistor als Auswahltransistor für nichtflüchtige Speichereinrichtung betrieben |
TWI383502B (zh) * | 2007-10-02 | 2013-01-21 | Chunghwa Picture Tubes Ltd | 畫素結構及其製造方法 |
CN101409262B (zh) * | 2007-10-10 | 2010-06-09 | 中华映管股份有限公司 | 像素结构的制造方法 |
US8765607B2 (en) * | 2011-06-01 | 2014-07-01 | Freescale Semiconductor, Inc. | Active tiling placement for improved latch-up immunity |
US10032868B2 (en) * | 2016-09-09 | 2018-07-24 | Texas Instruments Incorporated | High performance super-beta NPN (SBNPN) |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2508704B1 (fr) * | 1981-06-26 | 1985-06-07 | Thomson Csf | Procede de fabrication de transistors bipolaires integres de tres petites dimensions |
US4483726A (en) * | 1981-06-30 | 1984-11-20 | International Business Machines Corporation | Double self-aligned fabrication process for making a bipolar transistor structure having a small polysilicon-to-extrinsic base contact area |
DE3330895A1 (de) * | 1983-08-26 | 1985-03-14 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von bipolartransistorstrukturen mit selbstjustierten emitter- und basisbereichen fuer hoechstfrequenzschaltungen |
JPS6081862A (ja) * | 1983-10-12 | 1985-05-09 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置およびその製造方法 |
NL8402856A (nl) * | 1984-09-18 | 1986-04-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
US4610730A (en) * | 1984-12-20 | 1986-09-09 | Trw Inc. | Fabrication process for bipolar devices |
JPH0658912B2 (ja) * | 1985-05-07 | 1994-08-03 | 日本電信電話株式会社 | バイポーラトランジスタの製造方法 |
EP0246682A1 (de) * | 1986-04-23 | 1987-11-25 | Koninklijke Philips Electronics N.V. | Verfahren zur Herstellung einer Halbleiteranordnung mit einer Elektrode aus polykristallinem Silizium |
JPS63111667A (ja) * | 1986-10-29 | 1988-05-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2565159B2 (ja) * | 1987-03-28 | 1996-12-18 | ソニー株式会社 | 半導体装置及びその製造方法 |
US4772566A (en) * | 1987-07-01 | 1988-09-20 | Motorola Inc. | Single tub transistor means and method |
JPH0616513B2 (ja) * | 1987-07-02 | 1994-03-02 | 日本電気株式会社 | Npn型バイポーラトランジスタの製造方法 |
JPS6459955A (en) * | 1987-08-31 | 1989-03-07 | Nec Corp | Manufacture of semiconductor device |
-
1989
- 1989-09-20 GB GB8921262A patent/GB2236901A/en not_active Withdrawn
-
1990
- 1990-09-13 US US07/582,298 patent/US5023192A/en not_active Expired - Fee Related
- 1990-09-14 DE DE69027644T patent/DE69027644T2/de not_active Expired - Fee Related
- 1990-09-14 EP EP90202437A patent/EP0421507B1/de not_active Expired - Lifetime
- 1990-09-17 KR KR1019900014642A patent/KR910007162A/ko not_active Application Discontinuation
- 1990-09-18 JP JP2246363A patent/JPH0727915B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5023192A (en) | 1991-06-11 |
DE69027644D1 (de) | 1996-08-08 |
JPH03112136A (ja) | 1991-05-13 |
EP0421507A3 (en) | 1991-11-06 |
JPH0727915B2 (ja) | 1995-03-29 |
EP0421507A2 (de) | 1991-04-10 |
GB2236901A (en) | 1991-04-17 |
EP0421507B1 (de) | 1996-07-03 |
GB8921262D0 (en) | 1989-11-08 |
KR910007162A (ko) | 1991-04-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |