DE602005023125D1 - Vertikaler MOSFET Transistor als Auswahltransistor für nichtflüchtige Speichereinrichtung betrieben - Google Patents

Vertikaler MOSFET Transistor als Auswahltransistor für nichtflüchtige Speichereinrichtung betrieben

Info

Publication number
DE602005023125D1
DE602005023125D1 DE602005023125T DE602005023125T DE602005023125D1 DE 602005023125 D1 DE602005023125 D1 DE 602005023125D1 DE 602005023125 T DE602005023125 T DE 602005023125T DE 602005023125 T DE602005023125 T DE 602005023125T DE 602005023125 D1 DE602005023125 D1 DE 602005023125D1
Authority
DE
Germany
Prior art keywords
memory device
volatile memory
vertical mosfet
transistor
operated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005023125T
Other languages
English (en)
Inventor
Fabio Pellizzer
Agostino Pirovano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE602005023125D1 publication Critical patent/DE602005023125D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/34—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the vertical channel field-effect transistor type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
DE602005023125T 2005-04-27 2005-04-27 Vertikaler MOSFET Transistor als Auswahltransistor für nichtflüchtige Speichereinrichtung betrieben Active DE602005023125D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05425261A EP1717861B1 (de) 2005-04-27 2005-04-27 Vertikaler MOSFET Transistor als Auswahltransistor für nichtflüchtige Speichereinrichtung betrieben

Publications (1)

Publication Number Publication Date
DE602005023125D1 true DE602005023125D1 (de) 2010-10-07

Family

ID=34943174

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005023125T Active DE602005023125D1 (de) 2005-04-27 2005-04-27 Vertikaler MOSFET Transistor als Auswahltransistor für nichtflüchtige Speichereinrichtung betrieben

Country Status (3)

Country Link
US (3) US7847329B2 (de)
EP (1) EP1717861B1 (de)
DE (1) DE602005023125D1 (de)

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EP1717861B1 (de) 2005-04-27 2010-08-25 STMicroelectronics Srl Vertikaler MOSFET Transistor als Auswahltransistor für nichtflüchtige Speichereinrichtung betrieben
KR100763335B1 (ko) * 2006-09-12 2007-10-04 삼성전자주식회사 트랜지스터들, 집적 회로배선들 및 그의 형성방법들
KR100766504B1 (ko) * 2006-09-29 2007-10-15 삼성전자주식회사 반도체 소자 및 그 제조 방법
DE102007009876A1 (de) * 2007-02-28 2008-09-11 Qimonda Ag Anordnung von Speicherzellen umfassend Doppel-Gate-Transistoren mit gebogenem Stromfluss, sowie Verfahren zum Betrieb und zur Herstellung derselben
US7599211B2 (en) 2007-04-10 2009-10-06 Infineon Technologies Ag Integrated circuit, resistivity changing memory device, memory module and method of fabricating an integrated circuit
CN101952986B (zh) 2007-09-07 2014-03-12 台湾积体电路制造股份有限公司 电子组件及电子组件的制作方法
JP5779702B2 (ja) * 2008-02-15 2015-09-16 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置及びその製造方法
WO2010138876A2 (en) * 2009-05-28 2010-12-02 Cornell University Phase transition memories and transistors
US9673102B2 (en) 2011-04-01 2017-06-06 Micron Technology, Inc. Methods of forming vertical field-effect transistor with self-aligned contacts for memory devices with planar periphery/array and intermediate structures formed thereby
KR101893848B1 (ko) * 2011-06-16 2018-10-04 삼성전자주식회사 수직 소자 및 비-수직 소자를 갖는 반도체 소자 및 그 형성 방법
US9269747B2 (en) 2012-08-23 2016-02-23 Micron Technology, Inc. Self-aligned interconnection for integrated circuits
US9812336B2 (en) * 2013-10-29 2017-11-07 Globalfoundries Inc. FinFET semiconductor structures and methods of fabricating same
CN104900696B (zh) * 2014-03-04 2019-02-15 中芯国际集成电路制造(上海)有限公司 垂直纳米线mos晶体管及其形成方法
KR102167517B1 (ko) * 2014-03-28 2020-10-19 인텔 코포레이션 수직 반도체 디바이스들을 제조하기 위한 종횡비 트래핑(art)
US10727339B2 (en) 2014-03-28 2020-07-28 Intel Corporation Selectively regrown top contact for vertical semiconductor devices
US9496256B2 (en) * 2014-07-18 2016-11-15 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device including a vertical gate-all-around transistor and a planar transistor
US9780102B2 (en) 2014-11-07 2017-10-03 Micron Technology, Inc. Memory cell pillar including source junction plug
US11233091B2 (en) * 2019-03-04 2022-01-25 International Business Machines Corporation Resistive memory cell having a single fin
WO2020181410A1 (zh) * 2019-03-08 2020-09-17 深圳市汇顶科技股份有限公司 1t1r阻变式存储器及其制作方法、晶体管和设备
DE102020112203A1 (de) * 2020-03-13 2021-09-16 Taiwan Semiconductor Manufacturing Co. Ltd. Verfahren zum einbetten planarer fets mit finfets
US11515250B2 (en) 2021-02-03 2022-11-29 Sandisk Technologies Llc Three dimensional semiconductor device containing composite contact via structures and methods of making the same
US20230029141A1 (en) * 2021-07-23 2023-01-26 Taiwan Semiconductor Manufacturing Company Embedded double side heating phase change random access memory (pcram) device and method of making same

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Also Published As

Publication number Publication date
US9231103B2 (en) 2016-01-05
EP1717861B1 (de) 2010-08-25
EP1717861A9 (de) 2007-04-04
US20060278921A1 (en) 2006-12-14
US7847329B2 (en) 2010-12-07
US8766344B2 (en) 2014-07-01
US20140239244A1 (en) 2014-08-28
EP1717861A1 (de) 2006-11-02
US20100320432A1 (en) 2010-12-23

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