FR2884052B1 - Transistor imos - Google Patents

Transistor imos

Info

Publication number
FR2884052B1
FR2884052B1 FR0550816A FR0550816A FR2884052B1 FR 2884052 B1 FR2884052 B1 FR 2884052B1 FR 0550816 A FR0550816 A FR 0550816A FR 0550816 A FR0550816 A FR 0550816A FR 2884052 B1 FR2884052 B1 FR 2884052B1
Authority
FR
France
Prior art keywords
imos
transistor
transistor imos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0550816A
Other languages
English (en)
Other versions
FR2884052A1 (fr
Inventor
Clement Charbuillet
Thomas Skotnicki
Alexandre Villaret
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR0550816A priority Critical patent/FR2884052B1/fr
Priority to US11/393,616 priority patent/US7608867B2/en
Publication of FR2884052A1 publication Critical patent/FR2884052A1/fr
Application granted granted Critical
Publication of FR2884052B1 publication Critical patent/FR2884052B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
FR0550816A 2005-03-30 2005-03-30 Transistor imos Expired - Fee Related FR2884052B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0550816A FR2884052B1 (fr) 2005-03-30 2005-03-30 Transistor imos
US11/393,616 US7608867B2 (en) 2005-03-30 2006-03-30 Vertical IMOS transistor having a PIN diode formed within

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0550816A FR2884052B1 (fr) 2005-03-30 2005-03-30 Transistor imos

Publications (2)

Publication Number Publication Date
FR2884052A1 FR2884052A1 (fr) 2006-10-06
FR2884052B1 true FR2884052B1 (fr) 2007-06-22

Family

ID=35229801

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0550816A Expired - Fee Related FR2884052B1 (fr) 2005-03-30 2005-03-30 Transistor imos

Country Status (2)

Country Link
US (1) US7608867B2 (fr)
FR (1) FR2884052B1 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2894386B1 (fr) * 2005-12-06 2008-02-29 Commissariat Energie Atomique Transistor de type i-mos comportant deux grilles independantes, et procede d'utilisation d'un tel transistor
US8138583B2 (en) * 2007-02-16 2012-03-20 Cree, Inc. Diode having reduced on-resistance and associated method of manufacture
US8674434B2 (en) 2008-03-24 2014-03-18 Micron Technology, Inc. Impact ionization devices
US8232585B2 (en) * 2008-07-24 2012-07-31 Micron Technology, Inc. JFET devices with PIN gate stacks
US8754401B2 (en) * 2009-08-31 2014-06-17 International Business Machines Corporation Impact ionization field-effect transistor
US9087926B2 (en) * 2009-12-23 2015-07-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Low capacitance semiconductor device
US8680619B2 (en) * 2010-03-16 2014-03-25 Taiwan Semiconductor Manufacturing Compnay, Ltd. Method of fabricating hybrid impact-ionization semiconductor device
FR2980039B1 (fr) * 2011-09-12 2013-09-27 Commissariat Energie Atomique Transistor a effet de champ z2fet a pente sous le seuil verticale et sans ionisation par impact
US9379257B2 (en) 2012-06-22 2016-06-28 Infineon Technologies Ag Electrical device and method for manufacturing same
CN103208532B (zh) * 2013-02-28 2015-06-10 溧阳市宏达电机有限公司 一种鳍型pin二极管
EP3291307B1 (fr) 2016-08-31 2021-11-03 Stmicroelectronics Sa Point memoire
US9653458B1 (en) 2016-09-22 2017-05-16 International Business Machines Corporation Integrated device with P-I-N diodes and vertical field effect transistors
JP2019046864A (ja) * 2017-08-30 2019-03-22 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び電子機器
TWI646653B (zh) * 2017-12-28 2019-01-01 新唐科技股份有限公司 橫向擴散金屬氧化物半導體場效電晶體
US10355046B1 (en) * 2017-12-29 2019-07-16 Spin Memory, Inc. Steep slope field-effect transistor (FET) for a perpendicular magnetic tunnel junction (PMTJ)
US11342469B2 (en) * 2018-07-09 2022-05-24 Macom Technology Solutions Holdings, Inc. Vertical etch heterolithic integrated circuit devices
US10651110B1 (en) * 2018-12-31 2020-05-12 Juniper Networks, Inc. Efficient heat-sinking in PIN diode
CN112838129B (zh) * 2021-01-08 2022-04-05 江苏东海半导体股份有限公司 基于碳化硅平面型mos结构的pin二极管

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5920088A (en) * 1995-06-16 1999-07-06 Interuniversitair Micro-Electronica Centrum (Imec Vzw) Vertical MISFET devices
US6239472B1 (en) * 1998-09-01 2001-05-29 Philips Electronics North America Corp. MOSFET structure having improved source/drain junction performance
DE19943390A1 (de) * 1999-09-10 2001-05-03 Walter Hansch Halbleiterbauelement
FR2806833B1 (fr) * 2000-03-27 2002-06-14 St Microelectronics Sa Procede de fabrication d'un transistor mos a deux grilles, dont l'une est enterree, et transistor correspondant
FR2823010B1 (fr) * 2001-04-02 2003-08-15 St Microelectronics Sa Procede de fabrication d'un transistor vertical a grille isolee a quadruple canal de conduction, et circuit integre comportant un tel transistor
FR2826180B1 (fr) * 2001-06-19 2003-09-19 St Microelectronics Sa Dispositif semiconducteur integre de memoire de type dram et procede de fabrication correspondant
US6511884B1 (en) * 2001-10-09 2003-01-28 Chartered Semiconductor Manufacturing Ltd. Method to form and/or isolate vertical transistors
FR2838238B1 (fr) * 2002-04-08 2005-04-15 St Microelectronics Sa Dispositif semiconducteur a grille enveloppante encapsule dans un milieu isolant
AU2003258948A1 (en) * 2002-06-19 2004-01-06 The Board Of Trustees Of The Leland Stanford Junior University Insulated-gate semiconductor device and approach involving junction-induced intermediate region
FR2853454B1 (fr) * 2003-04-03 2005-07-15 St Microelectronics Sa Transistor mos haute densite

Also Published As

Publication number Publication date
FR2884052A1 (fr) 2006-10-06
US20060220086A1 (en) 2006-10-05
US7608867B2 (en) 2009-10-27

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20091130