FR2884052B1 - Transistor imos - Google Patents
Transistor imosInfo
- Publication number
- FR2884052B1 FR2884052B1 FR0550816A FR0550816A FR2884052B1 FR 2884052 B1 FR2884052 B1 FR 2884052B1 FR 0550816 A FR0550816 A FR 0550816A FR 0550816 A FR0550816 A FR 0550816A FR 2884052 B1 FR2884052 B1 FR 2884052B1
- Authority
- FR
- France
- Prior art keywords
- imos
- transistor
- transistor imos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0550816A FR2884052B1 (fr) | 2005-03-30 | 2005-03-30 | Transistor imos |
US11/393,616 US7608867B2 (en) | 2005-03-30 | 2006-03-30 | Vertical IMOS transistor having a PIN diode formed within |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0550816A FR2884052B1 (fr) | 2005-03-30 | 2005-03-30 | Transistor imos |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2884052A1 FR2884052A1 (fr) | 2006-10-06 |
FR2884052B1 true FR2884052B1 (fr) | 2007-06-22 |
Family
ID=35229801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0550816A Expired - Fee Related FR2884052B1 (fr) | 2005-03-30 | 2005-03-30 | Transistor imos |
Country Status (2)
Country | Link |
---|---|
US (1) | US7608867B2 (fr) |
FR (1) | FR2884052B1 (fr) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2894386B1 (fr) * | 2005-12-06 | 2008-02-29 | Commissariat Energie Atomique | Transistor de type i-mos comportant deux grilles independantes, et procede d'utilisation d'un tel transistor |
US8138583B2 (en) * | 2007-02-16 | 2012-03-20 | Cree, Inc. | Diode having reduced on-resistance and associated method of manufacture |
US8674434B2 (en) | 2008-03-24 | 2014-03-18 | Micron Technology, Inc. | Impact ionization devices |
US8232585B2 (en) * | 2008-07-24 | 2012-07-31 | Micron Technology, Inc. | JFET devices with PIN gate stacks |
US8754401B2 (en) * | 2009-08-31 | 2014-06-17 | International Business Machines Corporation | Impact ionization field-effect transistor |
US9087926B2 (en) * | 2009-12-23 | 2015-07-21 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Low capacitance semiconductor device |
US8680619B2 (en) * | 2010-03-16 | 2014-03-25 | Taiwan Semiconductor Manufacturing Compnay, Ltd. | Method of fabricating hybrid impact-ionization semiconductor device |
FR2980039B1 (fr) * | 2011-09-12 | 2013-09-27 | Commissariat Energie Atomique | Transistor a effet de champ z2fet a pente sous le seuil verticale et sans ionisation par impact |
US9379257B2 (en) | 2012-06-22 | 2016-06-28 | Infineon Technologies Ag | Electrical device and method for manufacturing same |
CN103208532B (zh) * | 2013-02-28 | 2015-06-10 | 溧阳市宏达电机有限公司 | 一种鳍型pin二极管 |
EP3291307B1 (fr) | 2016-08-31 | 2021-11-03 | Stmicroelectronics Sa | Point memoire |
US9653458B1 (en) | 2016-09-22 | 2017-05-16 | International Business Machines Corporation | Integrated device with P-I-N diodes and vertical field effect transistors |
JP2019046864A (ja) * | 2017-08-30 | 2019-03-22 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及び電子機器 |
TWI646653B (zh) * | 2017-12-28 | 2019-01-01 | 新唐科技股份有限公司 | 橫向擴散金屬氧化物半導體場效電晶體 |
US10355046B1 (en) * | 2017-12-29 | 2019-07-16 | Spin Memory, Inc. | Steep slope field-effect transistor (FET) for a perpendicular magnetic tunnel junction (PMTJ) |
US11342469B2 (en) * | 2018-07-09 | 2022-05-24 | Macom Technology Solutions Holdings, Inc. | Vertical etch heterolithic integrated circuit devices |
US10651110B1 (en) * | 2018-12-31 | 2020-05-12 | Juniper Networks, Inc. | Efficient heat-sinking in PIN diode |
CN112838129B (zh) * | 2021-01-08 | 2022-04-05 | 江苏东海半导体股份有限公司 | 基于碳化硅平面型mos结构的pin二极管 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5920088A (en) * | 1995-06-16 | 1999-07-06 | Interuniversitair Micro-Electronica Centrum (Imec Vzw) | Vertical MISFET devices |
US6239472B1 (en) * | 1998-09-01 | 2001-05-29 | Philips Electronics North America Corp. | MOSFET structure having improved source/drain junction performance |
DE19943390A1 (de) * | 1999-09-10 | 2001-05-03 | Walter Hansch | Halbleiterbauelement |
FR2806833B1 (fr) * | 2000-03-27 | 2002-06-14 | St Microelectronics Sa | Procede de fabrication d'un transistor mos a deux grilles, dont l'une est enterree, et transistor correspondant |
FR2823010B1 (fr) * | 2001-04-02 | 2003-08-15 | St Microelectronics Sa | Procede de fabrication d'un transistor vertical a grille isolee a quadruple canal de conduction, et circuit integre comportant un tel transistor |
FR2826180B1 (fr) * | 2001-06-19 | 2003-09-19 | St Microelectronics Sa | Dispositif semiconducteur integre de memoire de type dram et procede de fabrication correspondant |
US6511884B1 (en) * | 2001-10-09 | 2003-01-28 | Chartered Semiconductor Manufacturing Ltd. | Method to form and/or isolate vertical transistors |
FR2838238B1 (fr) * | 2002-04-08 | 2005-04-15 | St Microelectronics Sa | Dispositif semiconducteur a grille enveloppante encapsule dans un milieu isolant |
AU2003258948A1 (en) * | 2002-06-19 | 2004-01-06 | The Board Of Trustees Of The Leland Stanford Junior University | Insulated-gate semiconductor device and approach involving junction-induced intermediate region |
FR2853454B1 (fr) * | 2003-04-03 | 2005-07-15 | St Microelectronics Sa | Transistor mos haute densite |
-
2005
- 2005-03-30 FR FR0550816A patent/FR2884052B1/fr not_active Expired - Fee Related
-
2006
- 2006-03-30 US US11/393,616 patent/US7608867B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2884052A1 (fr) | 2006-10-06 |
US20060220086A1 (en) | 2006-10-05 |
US7608867B2 (en) | 2009-10-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20091130 |