FR2894386B1 - Transistor de type i-mos comportant deux grilles independantes, et procede d'utilisation d'un tel transistor - Google Patents

Transistor de type i-mos comportant deux grilles independantes, et procede d'utilisation d'un tel transistor

Info

Publication number
FR2894386B1
FR2894386B1 FR0512358A FR0512358A FR2894386B1 FR 2894386 B1 FR2894386 B1 FR 2894386B1 FR 0512358 A FR0512358 A FR 0512358A FR 0512358 A FR0512358 A FR 0512358A FR 2894386 B1 FR2894386 B1 FR 2894386B1
Authority
FR
France
Prior art keywords
transistor
mos type
independent grids
type transistor
grids
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0512358A
Other languages
English (en)
Other versions
FR2894386A1 (fr
Inventor
Royer Cyrille Le
Olivier Faynot
Laurent Clavelier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0512358A priority Critical patent/FR2894386B1/fr
Priority to PCT/FR2006/002628 priority patent/WO2007065985A1/fr
Priority to US12/085,866 priority patent/US7732282B2/en
Priority to EP06841838A priority patent/EP1958261A1/fr
Publication of FR2894386A1 publication Critical patent/FR2894386A1/fr
Application granted granted Critical
Publication of FR2894386B1 publication Critical patent/FR2894386B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR0512358A 2005-12-06 2005-12-06 Transistor de type i-mos comportant deux grilles independantes, et procede d'utilisation d'un tel transistor Expired - Fee Related FR2894386B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0512358A FR2894386B1 (fr) 2005-12-06 2005-12-06 Transistor de type i-mos comportant deux grilles independantes, et procede d'utilisation d'un tel transistor
PCT/FR2006/002628 WO2007065985A1 (fr) 2005-12-06 2006-12-01 Transistor de type i-mos comportant deux grilles independantes, et procede d'utilisation d'un tel transistor
US12/085,866 US7732282B2 (en) 2005-12-06 2006-12-01 Transistor of the I-MOS type comprising two independent gates and method of using such a transistor
EP06841838A EP1958261A1 (fr) 2005-12-06 2006-12-01 Transistor de type i-mos comportant deux grilles independantes, et procede d'utilisation d'un tel transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0512358A FR2894386B1 (fr) 2005-12-06 2005-12-06 Transistor de type i-mos comportant deux grilles independantes, et procede d'utilisation d'un tel transistor

Publications (2)

Publication Number Publication Date
FR2894386A1 FR2894386A1 (fr) 2007-06-08
FR2894386B1 true FR2894386B1 (fr) 2008-02-29

Family

ID=36830769

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0512358A Expired - Fee Related FR2894386B1 (fr) 2005-12-06 2005-12-06 Transistor de type i-mos comportant deux grilles independantes, et procede d'utilisation d'un tel transistor

Country Status (4)

Country Link
US (1) US7732282B2 (fr)
EP (1) EP1958261A1 (fr)
FR (1) FR2894386B1 (fr)
WO (1) WO2007065985A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5936247B2 (ja) * 2011-07-22 2016-06-22 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ トンネル電界効果トランジスタ
EP2568506A1 (fr) * 2011-09-09 2013-03-13 Imec Transistor à effet tunnel, porte logique comprenant le transistor, mémoire statique à accès aléatoire utilisant la porte logique et procédé de fabrication d'un tel transistor à effet tunnel
KR20140078326A (ko) * 2012-12-17 2014-06-25 경북대학교 산학협력단 터널링 전계효과 트랜지스터 및 터널링 전계효과 트랜지스터의 제조 방법
JP5784652B2 (ja) * 2013-02-14 2015-09-24 株式会社東芝 半導体装置
US9287406B2 (en) * 2013-06-06 2016-03-15 Macronix International Co., Ltd. Dual-mode transistor devices and methods for operating same
JP6083707B2 (ja) * 2013-09-09 2017-02-22 国立研究開発法人産業技術総合研究所 半導体装置およびその製造方法
US9685528B2 (en) 2015-06-30 2017-06-20 Taiwan Semiconductor Manufacturing Company, Ltd. Fin semiconductor device and method of manufacture with source/drain regions having opposite conductivities
CN110444585B (zh) * 2019-08-19 2023-06-09 上海华力微电子有限公司 一种栅控P-i-N二极管及其制造方法
CN110504325B (zh) * 2019-08-29 2023-06-02 上海华力微电子有限公司 一种新型栅控P-i-N二极管ESD器件及其实现方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0425175A (ja) * 1990-05-21 1992-01-28 Canon Inc ダイオード
TW273039B (fr) * 1993-02-16 1996-03-21 At & T Corp
JPH09213921A (ja) * 1996-02-05 1997-08-15 Sharp Corp 増幅型固体撮像素子及び増幅型固体撮像装置
DE19848596C2 (de) * 1998-10-21 2002-01-24 Roland Sittig Halbleiterschalter mit gleichmäßig verteilten feinen Steuerstrukturen
DE10029501C1 (de) * 2000-06-21 2001-10-04 Fraunhofer Ges Forschung Vertikal-Transistor mit beweglichen Gate und Verfahren zu dessen Herstelllung
JP4443063B2 (ja) * 2001-02-28 2010-03-31 株式会社日立製作所 電界効果トランジスタ及びそれを使用した画像表示装置
DE10217610B4 (de) * 2002-04-19 2005-11-03 Infineon Technologies Ag Metall-Halbleiter-Kontakt, Halbleiterbauelement, integrierte Schaltungsanordnung und Verfahren
AU2003258948A1 (en) * 2002-06-19 2004-01-06 The Board Of Trustees Of The Leland Stanford Junior University Insulated-gate semiconductor device and approach involving junction-induced intermediate region
FR2884052B1 (fr) * 2005-03-30 2007-06-22 St Microelectronics Crolles 2 Transistor imos
DE102006022126B4 (de) * 2006-05-11 2015-04-09 Infineon Technologies Ag Verfahren zum Herstellen eines elektronischen Bauelementes
FR2912838B1 (fr) * 2007-02-15 2009-06-05 Commissariat Energie Atomique Procede de realisation de grille de transistor
US20090072279A1 (en) * 2007-08-29 2009-03-19 Ecole Polytechnique Federale De Lausanne (Epfl) Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)
US20090283824A1 (en) * 2007-10-30 2009-11-19 Northrop Grumman Systems Corporation Cool impact-ionization transistor and method for making same

Also Published As

Publication number Publication date
EP1958261A1 (fr) 2008-08-20
US20090096028A1 (en) 2009-04-16
WO2007065985A1 (fr) 2007-06-14
FR2894386A1 (fr) 2007-06-08
US7732282B2 (en) 2010-06-08

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Effective date: 20190906