DE602004010795D1 - Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung - Google Patents

Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung

Info

Publication number
DE602004010795D1
DE602004010795D1 DE602004010795T DE602004010795T DE602004010795D1 DE 602004010795 D1 DE602004010795 D1 DE 602004010795D1 DE 602004010795 T DE602004010795 T DE 602004010795T DE 602004010795 T DE602004010795 T DE 602004010795T DE 602004010795 D1 DE602004010795 D1 DE 602004010795D1
Authority
DE
Germany
Prior art keywords
memory device
memory
improved page
programmable
programmable memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004010795T
Other languages
English (en)
Other versions
DE602004010795T2 (de
Inventor
Stefano Zanardi
Giulio Martinozzi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
SK Hynix Inc
Original Assignee
STMicroelectronics SRL
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, Hynix Semiconductor Inc filed Critical STMicroelectronics SRL
Publication of DE602004010795D1 publication Critical patent/DE602004010795D1/de
Application granted granted Critical
Publication of DE602004010795T2 publication Critical patent/DE602004010795T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory
DE602004010795T 2004-06-24 2004-06-24 Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung Expired - Lifetime DE602004010795T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04102942A EP1610343B1 (de) 2004-06-24 2004-06-24 Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung

Publications (2)

Publication Number Publication Date
DE602004010795D1 true DE602004010795D1 (de) 2008-01-31
DE602004010795T2 DE602004010795T2 (de) 2008-12-11

Family

ID=34929244

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004010795T Expired - Lifetime DE602004010795T2 (de) 2004-06-24 2004-06-24 Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung

Country Status (3)

Country Link
US (1) US7567456B2 (de)
EP (1) EP1610343B1 (de)
DE (1) DE602004010795T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602004010239T2 (de) * 2004-05-20 2008-09-25 Stmicroelectronics S.R.L., Agrate Brianza Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung
KR100666171B1 (ko) * 2005-01-10 2007-01-09 삼성전자주식회사 로드 프리 타입의 와이어드 오어 구조를 가지는 불휘발성반도체 메모리 장치와, 이에 대한 구동방법
KR100666170B1 (ko) * 2005-01-17 2007-01-09 삼성전자주식회사 결함 페이지 버퍼로부터의 데이터 전송이 차단되는와이어드 오어 구조의 불휘발성 반도체 메모리 장치
KR100672148B1 (ko) * 2005-02-17 2007-01-19 주식회사 하이닉스반도체 불휘발성 메모리 장치 및 그것의 페이지 버퍼 동작 방법
KR100672149B1 (ko) * 2005-02-17 2007-01-19 주식회사 하이닉스반도체 불휘발성 메모리 장치의 페이지 버퍼 동작 방법
KR100672122B1 (ko) * 2005-03-10 2007-01-19 주식회사 하이닉스반도체 소비 전력이 감소된 플래시 메모리 장치의 페이지 버퍼 회로
US7336543B2 (en) * 2006-02-21 2008-02-26 Elite Semiconductor Memory Technology Inc. Non-volatile memory device with page buffer having dual registers and methods using the same
KR100933859B1 (ko) * 2007-11-29 2009-12-24 주식회사 하이닉스반도체 플래시 메모리 소자 및 그것의 프로그램 방법
JP5010444B2 (ja) * 2007-11-29 2012-08-29 株式会社東芝 半導体記憶装置およびその駆動方法
US7961512B2 (en) * 2008-03-19 2011-06-14 Sandisk Corporation Adaptive algorithm in cache operation with dynamic data latch requirements
KR101082614B1 (ko) * 2010-07-09 2011-11-10 주식회사 하이닉스반도체 반도체 메모리 장치
KR20130061546A (ko) * 2011-12-01 2013-06-11 에스케이하이닉스 주식회사 반도체 메모리 장치
US9847133B2 (en) * 2016-01-19 2017-12-19 Ememory Technology Inc. Memory array capable of performing byte erase operation
KR102328226B1 (ko) * 2017-07-05 2021-11-18 에스케이하이닉스 주식회사 페이지 버퍼를 구비하는 메모리 장치
KR20210116082A (ko) * 2020-03-17 2021-09-27 에스케이하이닉스 주식회사 페이지 버퍼 및 이를 포함하는 반도체 메모리 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4271488A (en) * 1979-04-13 1981-06-02 Tektronix, Inc. High-speed acquisition system employing an analog memory matrix
KR0169419B1 (ko) * 1995-09-28 1999-02-01 김광호 불휘발성 반도체 메모리의 독출방법 및 장치
KR0172403B1 (ko) * 1995-11-15 1999-03-30 김광호 불휘발성 반도체 메모리의 데이타 리드회로
US20020117856A1 (en) * 1999-10-20 2002-08-29 Beverly Watts Ramos Wedgethread pipe connection
JP4044755B2 (ja) * 2000-12-12 2008-02-06 三星電子株式会社 不揮発性半導体メモリ装置及びそれのプログラム方法
KR100387529B1 (ko) * 2001-06-11 2003-06-18 삼성전자주식회사 랜덤 억세스 가능한 메모리 셀 어레이를 갖는 불휘발성반도체 메모리 장치
US7042770B2 (en) * 2001-07-23 2006-05-09 Samsung Electronics Co., Ltd. Memory devices with page buffer having dual registers and method of using the same
KR100454119B1 (ko) * 2001-10-24 2004-10-26 삼성전자주식회사 캐쉬 기능을 갖는 불 휘발성 반도체 메모리 장치 및 그것의 프로그램, 읽기, 그리고 페이지 카피백 방법들
JP4004811B2 (ja) * 2002-02-06 2007-11-07 株式会社東芝 不揮発性半導体記憶装置
KR100471167B1 (ko) * 2002-05-13 2005-03-08 삼성전자주식회사 프로그램된 메모리 셀들을 검증하기 위한 페이지 버퍼를구비한 반도체 메모리 장치
JP4237648B2 (ja) * 2004-01-30 2009-03-11 株式会社東芝 不揮発性半導体記憶装置
KR100624287B1 (ko) * 2004-05-11 2006-09-18 에스티마이크로일렉트로닉스 엔.브이. 낸드 플래시 메모리 소자의 리던던시 회로
DE602004010239T2 (de) * 2004-05-20 2008-09-25 Stmicroelectronics S.R.L., Agrate Brianza Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung
KR100609568B1 (ko) * 2004-07-15 2006-08-08 에스티마이크로일렉트로닉스 엔.브이. 비휘발성 메모리 장치의 페이지 버퍼 및 이를 이용한프로그램 방법과 독출 방법
KR100680478B1 (ko) * 2005-03-22 2007-02-08 주식회사 하이닉스반도체 면적이 감소된 플래시 메모리 장치와 그 액세스 제어 방법

Also Published As

Publication number Publication date
US20060007774A1 (en) 2006-01-12
US7567456B2 (en) 2009-07-28
EP1610343A1 (de) 2005-12-28
DE602004010795T2 (de) 2008-12-11
EP1610343B1 (de) 2007-12-19

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