DE602004010239D1 - Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung - Google Patents

Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung

Info

Publication number
DE602004010239D1
DE602004010239D1 DE602004010239T DE602004010239T DE602004010239D1 DE 602004010239 D1 DE602004010239 D1 DE 602004010239D1 DE 602004010239 T DE602004010239 T DE 602004010239T DE 602004010239 T DE602004010239 T DE 602004010239T DE 602004010239 D1 DE602004010239 D1 DE 602004010239D1
Authority
DE
Germany
Prior art keywords
memory device
memory
improved page
programmable
programmable memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004010239T
Other languages
English (en)
Other versions
DE602004010239T2 (de
Inventor
Osama Khouri
Stefano Zanardi
Giulio Martinozzi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
SK Hynix Inc
Original Assignee
STMicroelectronics SRL
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, Hynix Semiconductor Inc filed Critical STMicroelectronics SRL
Publication of DE602004010239D1 publication Critical patent/DE602004010239D1/de
Application granted granted Critical
Publication of DE602004010239T2 publication Critical patent/DE602004010239T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
DE602004010239T 2004-05-20 2004-05-20 Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung Expired - Lifetime DE602004010239T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04102232A EP1598831B1 (de) 2004-05-20 2004-05-20 Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung

Publications (2)

Publication Number Publication Date
DE602004010239D1 true DE602004010239D1 (de) 2008-01-03
DE602004010239T2 DE602004010239T2 (de) 2008-09-25

Family

ID=34929122

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004010239T Expired - Lifetime DE602004010239T2 (de) 2004-05-20 2004-05-20 Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung

Country Status (3)

Country Link
US (2) US7298650B2 (de)
EP (1) EP1598831B1 (de)
DE (1) DE602004010239T2 (de)

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US8250295B2 (en) 2004-01-05 2012-08-21 Smart Modular Technologies, Inc. Multi-rank memory module that emulates a memory module having a different number of ranks
EP1598831B1 (de) * 2004-05-20 2007-11-21 STMicroelectronics S.r.l. Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung
EP1610343B1 (de) * 2004-06-24 2007-12-19 STMicroelectronics S.r.l. Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung
KR100672149B1 (ko) * 2005-02-17 2007-01-19 주식회사 하이닉스반도체 불휘발성 메모리 장치의 페이지 버퍼 동작 방법
KR100672122B1 (ko) * 2005-03-10 2007-01-19 주식회사 하이닉스반도체 소비 전력이 감소된 플래시 메모리 장치의 페이지 버퍼 회로
US7489546B2 (en) * 2005-12-20 2009-02-10 Micron Technology, Inc. NAND architecture memory devices and operation
WO2007095217A1 (en) * 2006-02-15 2007-08-23 Micron Technology, Inc. Single latch data circuit in a multiple level cell non-volatile memory device
ITRM20060074A1 (it) 2006-02-15 2007-08-16 Micron Technology Inc Circuito per dati a latch singolo in un dispositivo di memoria volatile e delle a piu livelli
US7450422B2 (en) * 2006-05-11 2008-11-11 Micron Technology, Inc. NAND architecture memory devices and operation
EP2038892A2 (de) * 2006-06-30 2009-03-25 Nxp B.V. Speichervorrichtung mit flash-cache-bereich und verfahren zu ihrer anwendung
US7551467B2 (en) * 2006-08-04 2009-06-23 Micron Technology, Inc. Memory device architectures and operation
KR100769770B1 (ko) * 2006-09-29 2007-10-23 주식회사 하이닉스반도체 메모리 장치의 페이지 버퍼 회로 및 프로그램 방법
US7417904B2 (en) 2006-10-31 2008-08-26 Atmel Corporation Adaptive gate voltage regulation
US7505326B2 (en) 2006-10-31 2009-03-17 Atmel Corporation Programming pulse generator
US8301833B1 (en) 2007-06-01 2012-10-30 Netlist, Inc. Non-volatile memory module
US8904098B2 (en) 2007-06-01 2014-12-02 Netlist, Inc. Redundant backup using non-volatile memory
US8874831B2 (en) 2007-06-01 2014-10-28 Netlist, Inc. Flash-DRAM hybrid memory module
KR100953044B1 (ko) * 2008-05-26 2010-04-14 주식회사 하이닉스반도체 불휘발성 메모리 장치의 프로그램 방법
US8180994B2 (en) * 2009-07-08 2012-05-15 Sandisk Technologies Inc. Optimized page programming order for non-volatile memory
KR20120045202A (ko) * 2010-10-29 2012-05-09 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 프로그램 방법
US10198350B2 (en) 2011-07-28 2019-02-05 Netlist, Inc. Memory module having volatile and non-volatile memory subsystems and method of operation
US10838646B2 (en) 2011-07-28 2020-11-17 Netlist, Inc. Method and apparatus for presearching stored data
US10380022B2 (en) 2011-07-28 2019-08-13 Netlist, Inc. Hybrid memory module and system and method of operating the same
US10372551B2 (en) 2013-03-15 2019-08-06 Netlist, Inc. Hybrid memory system with configurable error thresholds and failure analysis capability
US9436600B2 (en) 2013-06-11 2016-09-06 Svic No. 28 New Technology Business Investment L.L.P. Non-volatile memory storage for multi-channel memory system
KR102155042B1 (ko) * 2013-09-02 2020-09-11 에스케이하이닉스 주식회사 반도체 메모리 장치, 그것의 동작 방법 및 그것을 포함하는 메모리 시스템
US10248328B2 (en) 2013-11-07 2019-04-02 Netlist, Inc. Direct data move between DRAM and storage on a memory module
US9768781B2 (en) * 2015-04-11 2017-09-19 Casinda, Inc. Identification circuit and IC chip comprising the same
KR102417976B1 (ko) * 2015-10-21 2022-07-07 에스케이하이닉스 주식회사 메모리 시스템 및 이의 동작 방법
KR102328226B1 (ko) * 2017-07-05 2021-11-18 에스케이하이닉스 주식회사 페이지 버퍼를 구비하는 메모리 장치

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KR960000616B1 (ko) * 1993-01-13 1996-01-10 삼성전자주식회사 불휘발성 반도체 메모리 장치
US5724284A (en) * 1996-06-24 1998-03-03 Advanced Micro Devices, Inc. Multiple bits-per-cell flash shift register page buffer
KR100347866B1 (ko) * 1999-03-08 2002-08-09 삼성전자 주식회사 낸드 플래시 메모리 장치
US6304486B1 (en) * 1999-12-20 2001-10-16 Fujitsu Limited Sensing time control device and method
WO2002001574A1 (fr) * 2000-06-29 2002-01-03 Fujitsu Limited Memoire a semi-conducteurs
US7042770B2 (en) * 2001-07-23 2006-05-09 Samsung Electronics Co., Ltd. Memory devices with page buffer having dual registers and method of using the same
KR100454119B1 (ko) * 2001-10-24 2004-10-26 삼성전자주식회사 캐쉬 기능을 갖는 불 휘발성 반도체 메모리 장치 및 그것의 프로그램, 읽기, 그리고 페이지 카피백 방법들
KR100463197B1 (ko) * 2001-12-24 2004-12-23 삼성전자주식회사 멀티-페이지 프로그램 동작, 멀티-페이지 읽기 동작,그리고 멀티-블록 소거 동작을 갖는 낸드 플래시 메모리장치
JP2004030784A (ja) * 2002-06-26 2004-01-29 Fujitsu Ltd 半導体記憶装置
EP1598831B1 (de) * 2004-05-20 2007-11-21 STMicroelectronics S.r.l. Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung
EP1610343B1 (de) * 2004-06-24 2007-12-19 STMicroelectronics S.r.l. Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung

Also Published As

Publication number Publication date
US20060039197A1 (en) 2006-02-23
US7298650B2 (en) 2007-11-20
EP1598831B1 (de) 2007-11-21
US7471576B2 (en) 2008-12-30
EP1598831A1 (de) 2005-11-23
DE602004010239T2 (de) 2008-09-25
US20080065823A1 (en) 2008-03-13

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Legal Events

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