JP5527966B2 - 薄膜トランジスタ - Google Patents
薄膜トランジスタ Download PDFInfo
- Publication number
- JP5527966B2 JP5527966B2 JP2008326701A JP2008326701A JP5527966B2 JP 5527966 B2 JP5527966 B2 JP 5527966B2 JP 2008326701 A JP2008326701 A JP 2008326701A JP 2008326701 A JP2008326701 A JP 2008326701A JP 5527966 B2 JP5527966 B2 JP 5527966B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- atoms
- semiconductor film
- thin film
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 206
- 239000010408 film Substances 0.000 claims description 903
- 239000004065 semiconductor Substances 0.000 claims description 323
- 229910052732 germanium Inorganic materials 0.000 claims description 230
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 230
- 239000012535 impurity Substances 0.000 claims description 131
- 239000002245 particle Substances 0.000 claims description 15
- 125000004429 atom Chemical group 0.000 description 264
- 239000010410 layer Substances 0.000 description 185
- 239000000758 substrate Substances 0.000 description 92
- 238000000034 method Methods 0.000 description 84
- 238000006243 chemical reaction Methods 0.000 description 78
- 239000007789 gas Substances 0.000 description 63
- 229910021417 amorphous silicon Inorganic materials 0.000 description 58
- 230000008569 process Effects 0.000 description 37
- 239000004973 liquid crystal related substance Substances 0.000 description 35
- 229910052751 metal Inorganic materials 0.000 description 35
- 239000002184 metal Substances 0.000 description 35
- 229910052739 hydrogen Inorganic materials 0.000 description 33
- 239000001257 hydrogen Substances 0.000 description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 30
- 229910052710 silicon Inorganic materials 0.000 description 27
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 26
- 238000005530 etching Methods 0.000 description 26
- 230000001681 protective effect Effects 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 238000004519 manufacturing process Methods 0.000 description 25
- 239000010703 silicon Substances 0.000 description 25
- 238000000151 deposition Methods 0.000 description 24
- 230000008021 deposition Effects 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 22
- 229910052581 Si3N4 Inorganic materials 0.000 description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 21
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 230000005669 field effect Effects 0.000 description 15
- 229910052757 nitrogen Inorganic materials 0.000 description 15
- 230000006870 function Effects 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 13
- 230000007547 defect Effects 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 230000007246 mechanism Effects 0.000 description 12
- 239000013078 crystal Substances 0.000 description 11
- 239000001307 helium Substances 0.000 description 10
- 229910052734 helium Inorganic materials 0.000 description 10
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 239000000969 carrier Substances 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 229910052731 fluorine Inorganic materials 0.000 description 8
- 239000011737 fluorine Substances 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 150000002431 hydrogen Chemical class 0.000 description 7
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910052754 neon Inorganic materials 0.000 description 7
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 229910021332 silicide Inorganic materials 0.000 description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 238000007733 ion plating Methods 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 229920001940 conductive polymer Polymers 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910000078 germane Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- -1 hafnium nitride Chemical class 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000009751 slip forming Methods 0.000 description 4
- 230000005236 sound signal Effects 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 229910001930 tungsten oxide Inorganic materials 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 238000004040 coloring Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000001678 elastic recoil detection analysis Methods 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910052990 silicon hydride Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 239000002772 conduction electron Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 150000002835 noble gases Chemical class 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- WEAMLHXSIBDPGN-UHFFFAOYSA-N (4-hydroxy-3-methylphenyl) thiocyanate Chemical compound CC1=CC(SC#N)=CC=C1O WEAMLHXSIBDPGN-UHFFFAOYSA-N 0.000 description 1
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 description 1
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- 229910017073 AlLi Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910019974 CrSi Inorganic materials 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- TWRSDLOICOIGRH-UHFFFAOYSA-N [Si].[Si].[Hf] Chemical compound [Si].[Si].[Hf] TWRSDLOICOIGRH-UHFFFAOYSA-N 0.000 description 1
- VKTGMGGBYBQLGR-UHFFFAOYSA-N [Si].[V].[V].[V] Chemical compound [Si].[V].[V].[V] VKTGMGGBYBQLGR-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 1
- QCLQZCOGUCNIOC-UHFFFAOYSA-N azanylidynelanthanum Chemical compound [La]#N QCLQZCOGUCNIOC-UHFFFAOYSA-N 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- SKKMWRVAJNPLFY-UHFFFAOYSA-N azanylidynevanadium Chemical compound [V]#N SKKMWRVAJNPLFY-UHFFFAOYSA-N 0.000 description 1
- AJXBBNUQVRZRCZ-UHFFFAOYSA-N azanylidyneyttrium Chemical compound [Y]#N AJXBBNUQVRZRCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 1
- 229910021357 chromium silicide Inorganic materials 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
- 229910021355 zirconium silicide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
Description
ここでは、通常の微結晶半導体膜をチャネル形成領域に有する薄膜トランジスタと比較して、電界効果移動度及びオン電流が高く、オフ電流の低い薄膜トランジスタの構造について、図1乃至図9、35を用いて説明する。
本実施の形態では、実施の形態1に示す薄膜トランジスタの他の構造を図1(A)及び図34を用いて示す。ここでは、図1(A)を用いて示すが、適宜実施の形態1の他の図に示す薄膜トランジスタに本実施の形態を適用することができる。
本実施の形態では、電界効果移動度及びオン電流が高く、且つオフ電流の低い薄膜トランジスタの作製工程について示す。ここでは、代表例として、実施の形態1の図1(B)に示す薄膜トランジスタの作製方法について示す。
本実施の形態では、電界効果移動度及びオン電流が高く、且つオフ電流の低い薄膜トランジスタの作製工程について示す。また、実施の形態3と比較して、フォトマスク数を削減することが可能なプロセスを用いて薄膜トランジスタを作製する工程について示す。ここでは、代表例として、実施の形態1の図2に示す薄膜トランジスタの作製方法について示す。
本実施の形態では、電界効果移動度及びオン電流が高く、且つオフ電流の低い薄膜トランジスタの作製工程について以下に示す。ここでは、代表例として、実施の形態1の図3に示す薄膜トランジスタの作製方法について示す。
次に、図4に示すような、リーク電流の低減が可能なチャネル保護型薄膜トランジスタの作製工程について以下に示す。
次に、図5に示すような、リーク電流の低減が可能な薄膜トランジスタの作製工程について以下に示す。
次に、図7に示すような、リーク電流の低減が可能な薄膜トランジスタの作製工程について以下に示す。
本実施の形態では、実施の形態1乃至実施の形態8において、好ましい形態について、図25を用いて示す。
本実施の形態では、実施の形態3乃至実施の形態9で示す、5atoms%以上100atoms%以下のゲルマニウムを含む半導体膜または導電膜45を形成する前の工程について、以下に示す。ここでは、代表的に実施の形態3を用いて説明するが、適宜実施の形態4乃至実施の形態9に適用できる。
本実施の形態では、上記実施の形態での成膜工程に用いることが可能な成膜装置及びそこでの基板の流れを以下に示す。
本実施の形態では、表示装置の一形態として、上記実施の形態で示す薄膜トランジスタを有する液晶表示装置について、以下に示す。ここでは、VA(Vertical Alignment)型の液晶表示装置について、図26乃至図28を用いて説明する。VA型とは、液晶パネルの液晶分子の配列を制御する方式の一種である。VA型の液晶表示装置は、電圧が印加されていないときにパネル面に対して液晶分子が垂直方向を向く方式である。本実施の形態では、特に画素(ピクセル)をいくつかの領域(サブピクセル)に分け、それぞれ別の方向に分子を倒すよう工夫されている。これをマルチドメイン化あるいはマルチドメイン設計という。以下の説明では、マルチドメイン設計が考慮された液晶表示装置について説明する。
本実施の形態では、表示装置の一形態として、上記実施の形態で示す薄膜トランジスタを有する発光装置について、以下に示す。ここでは、発光装置が有する画素の構成について説明する。図29(A)に、画素の上面図の一形態を示し、図29(B)に図29(A)のA−Bに対応する画素の断面構造の一形態を示す。
次に、本実施の形態の表示パネルの構成について、以下に示す。
上記実施の形態により得られる表示装置等によって、アクティブマトリクス型表示装置パネルに用いることができる。即ち、それらを表示部に組み込んだ電子機器全てに上記実施の形態を実施できる。
Claims (3)
- ゲート電極上に、ゲート絶縁膜を介して該ゲート電極の端部に至らない内側領域に設けられた、導電性粒子と、前記導電性粒子を覆う5atoms%以上100atoms%以下のゲルマニウムを含む半導体膜と、
前記5atoms%以上100atoms%以下のゲルマニウムを含む半導体膜上に形成される非晶質半導体膜と、
前記非晶質半導体膜上に、ソース領域及びドレイン領域をそれぞれ形成する一導電型の不純物元素が添加された不純物半導体膜と、
前記5atoms%以上100atoms%以下のゲルマニウムを含む半導体膜、前記非晶質半導体膜、及び前記不純物半導体膜の側面を覆う絶縁膜と、
前記絶縁膜上に形成され、且つ前記不純物半導体膜に接する一対の配線と、
を有し、
画素部に設けられ、
前記配線は、前記画素部の画素電極に電気的に接続されていることを特徴とする薄膜トランジスタ。 - ゲート電極上に、ゲート絶縁膜を介して該ゲート電極の端部に至らない内側領域に設けられた、導電性粒子と、前記導電性粒子を覆う5atoms%以上100atoms%以下のゲルマニウムを含む半導体膜と、
前記5atoms%以上100atoms%以下のゲルマニウムを含む半導体膜上に形成される非晶質半導体膜と、
前記5atoms%以上100atoms%以下のゲルマニウムを含む半導体膜、及び前記非晶質半導体膜の側面を覆う絶縁膜と、
前記絶縁膜上に、ソース領域及びドレイン領域をそれぞれ形成する一導電型の不純物元素が添加された不純物半導体膜と、
前記ソース領域及び前記ドレイン領域の一方に電気的に接続された配線と、
を有し、
画素部に設けられ、
前記配線は、前記画素部の画素電極に電気的に接続されていることを特徴とする薄膜トランジスタ。 - ゲート電極上に、ゲート絶縁膜を介して該ゲート電極の端部に至らない内側領域に設けられた、導電性粒子と、
前記導電性粒子を覆う5atoms%以上100atoms%以下のゲルマニウムを含む半導体膜と、
前記5atoms%以上100atoms%以下のゲルマニウムを含む半導体膜の上面及び側面を被覆する非晶質半導体膜と、
前記非晶質半導体膜上に、ソース領域及びドレイン領域をそれぞれ形成する一導電型の不純物元素が添加された不純物半導体膜と、
を有することを特徴とする薄膜トランジスタ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008326701A JP5527966B2 (ja) | 2007-12-28 | 2008-12-23 | 薄膜トランジスタ |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007339409 | 2007-12-28 | ||
JP2007339409 | 2007-12-28 | ||
JP2008326701A JP5527966B2 (ja) | 2007-12-28 | 2008-12-23 | 薄膜トランジスタ |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009177156A JP2009177156A (ja) | 2009-08-06 |
JP2009177156A5 JP2009177156A5 (ja) | 2012-01-05 |
JP5527966B2 true JP5527966B2 (ja) | 2014-06-25 |
Family
ID=40797001
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008326701A Expired - Fee Related JP5527966B2 (ja) | 2007-12-28 | 2008-12-23 | 薄膜トランジスタ |
Country Status (2)
Country | Link |
---|---|
US (2) | US7968879B2 (ja) |
JP (1) | JP5527966B2 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI521712B (zh) * | 2007-12-03 | 2016-02-11 | 半導體能源研究所股份有限公司 | 薄膜電晶體,包括該薄膜電晶體的顯示裝置,和其製造方法 |
US8030655B2 (en) * | 2007-12-03 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, display device having thin film transistor |
KR101452971B1 (ko) * | 2008-01-24 | 2014-10-23 | 삼성디스플레이 주식회사 | 박막 트랜지스터의 성능 회복 방법, 이를 적용한 박막트랜지스터 및 액정 표시 장치 |
JP5475250B2 (ja) * | 2008-05-28 | 2014-04-16 | 三菱電機株式会社 | 半導体装置の製造方法及び半導体装置 |
KR101650917B1 (ko) * | 2009-03-09 | 2016-08-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 |
WO2011043206A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5521495B2 (ja) * | 2009-11-04 | 2014-06-11 | セイコーエプソン株式会社 | 半導体装置用基板、半導体装置及び電子機器 |
KR101836067B1 (ko) * | 2009-12-21 | 2018-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터와 그 제작 방법 |
TWI535028B (zh) * | 2009-12-21 | 2016-05-21 | 半導體能源研究所股份有限公司 | 薄膜電晶體 |
US8476744B2 (en) * | 2009-12-28 | 2013-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with channel including microcrystalline and amorphous semiconductor regions |
US8629445B2 (en) * | 2011-02-21 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic appliance |
TWI497689B (zh) | 2011-12-02 | 2015-08-21 | Ind Tech Res Inst | 半導體元件及其製造方法 |
JP2013125782A (ja) * | 2011-12-13 | 2013-06-24 | Hitachi Ltd | 酸化物半導体装置 |
US8900938B2 (en) * | 2012-07-02 | 2014-12-02 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Manufacturing method of array substrate, array substrate and LCD device |
WO2015181679A1 (en) * | 2014-05-27 | 2015-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10497725B2 (en) * | 2016-02-26 | 2019-12-03 | Sharp Kabushiki Kaisha | Method of producing display panel board |
TW202200828A (zh) * | 2020-06-24 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 含鉬薄膜的氣相沉積 |
CN115377208A (zh) * | 2021-05-20 | 2022-11-22 | 合肥京东方显示技术有限公司 | 薄膜晶体管及其制造方法、阵列基板、显示面板和装置 |
Family Cites Families (81)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5091334A (en) | 1980-03-03 | 1992-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JPS56122123A (en) | 1980-03-03 | 1981-09-25 | Shunpei Yamazaki | Semiamorphous semiconductor |
JPS6098680A (ja) | 1983-11-04 | 1985-06-01 | Seiko Instr & Electronics Ltd | 電界効果型薄膜トランジスタ |
JPS6187371A (ja) | 1984-10-05 | 1986-05-02 | Hitachi Ltd | 薄膜半導体装置 |
JPS62291067A (ja) * | 1986-06-10 | 1987-12-17 | Nec Corp | 薄膜トランジスタの製造方法 |
JPH03205830A (ja) * | 1990-01-06 | 1991-09-09 | Fujitsu Ltd | 半導体装置及び多結晶ゲルマニウムの製造方法 |
US5358925A (en) | 1990-04-18 | 1994-10-25 | Board Of Trustees Of The Leland Stanford Junior University | Silicon substrate having YSZ epitaxial barrier layer and an epitaxial superconducting layer |
EP0473988A1 (en) | 1990-08-29 | 1992-03-11 | International Business Machines Corporation | Method of fabricating a thin film transistor having amorphous/polycrystalline semiconductor channel region |
US5514879A (en) | 1990-11-20 | 1996-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Gate insulated field effect transistors and method of manufacturing the same |
JP2791422B2 (ja) | 1990-12-25 | 1998-08-27 | 株式会社 半導体エネルギー研究所 | 電気光学装置およびその作製方法 |
US5849601A (en) | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
KR950013784B1 (ko) | 1990-11-20 | 1995-11-16 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터 |
US7115902B1 (en) | 1990-11-20 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
KR920010885A (ko) * | 1990-11-30 | 1992-06-27 | 카나이 쯔또무 | 박막반도체와 그 제조방법 및 제조장치 및 화상처리장치 |
US7098479B1 (en) | 1990-12-25 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US7576360B2 (en) | 1990-12-25 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device which comprises thin film transistors and method for manufacturing the same |
JP2923700B2 (ja) | 1991-03-27 | 1999-07-26 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP3255942B2 (ja) | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
JPH05190857A (ja) * | 1992-01-10 | 1993-07-30 | Toshiba Corp | 薄膜トランジスタ |
JPH05267662A (ja) * | 1992-03-19 | 1993-10-15 | Hitachi Ltd | 相補型薄膜半導体装置およびそれを用いた画像情報処理装置 |
US5371380A (en) | 1992-04-15 | 1994-12-06 | Canon Kabushiki Kaisha | Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm-3) or less |
JP2924441B2 (ja) | 1992-04-27 | 1999-07-26 | 日本電気株式会社 | 薄膜トランジスタ及びその製造方法 |
US5355002A (en) * | 1993-01-19 | 1994-10-11 | Industrial Technology Research Institute | Structure of high yield thin film transistors |
CH687987A5 (de) | 1993-05-03 | 1997-04-15 | Balzers Hochvakuum | Verfahren zur Erhoehung der Beschichtungsrate in einem Plasmaentladungsraum und Plasmakammer. |
US6296735B1 (en) | 1993-05-03 | 2001-10-02 | Unaxis Balzers Aktiengesellschaft | Plasma treatment apparatus and method for operation same |
JPH0745833A (ja) | 1993-07-26 | 1995-02-14 | Nec Corp | 電界効果薄膜型トランジスタ素子の製造方法 |
US5648293A (en) | 1993-07-22 | 1997-07-15 | Nec Corporation | Method of growing an amorphous silicon film |
JP2682797B2 (ja) * | 1994-03-14 | 1997-11-26 | 行政院国家科学委員会 | 多結晶質薄膜トランジスターの製造方法 |
JPH07321323A (ja) * | 1994-05-24 | 1995-12-08 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタおよびその製造方法 |
JPH0855993A (ja) * | 1994-08-12 | 1996-02-27 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JPH08122819A (ja) * | 1994-10-25 | 1996-05-17 | Mitsubishi Electric Corp | 液晶表示装置及びその製造方法 |
TW303526B (ja) | 1994-12-27 | 1997-04-21 | Matsushita Electric Ind Co Ltd | |
JPH08195492A (ja) | 1995-01-13 | 1996-07-30 | Matsushita Electric Ind Co Ltd | 多結晶薄膜の形成方法および薄膜トランジスタの製造方法 |
US5828084A (en) * | 1995-03-27 | 1998-10-27 | Sony Corporation | High performance poly-SiGe thin film transistor |
JP2661594B2 (ja) * | 1995-05-25 | 1997-10-08 | 日本電気株式会社 | 薄膜トランジスタおよびその製造方法 |
JP2762968B2 (ja) | 1995-09-28 | 1998-06-11 | 日本電気株式会社 | 電界効果型薄膜トランジスタの製造方法 |
JPH10265948A (ja) | 1997-03-25 | 1998-10-06 | Rohm Co Ltd | 半導体装置用基板およびその製法 |
KR100257158B1 (ko) | 1997-06-30 | 2000-05-15 | 김영환 | 박막 트랜지스터 및 그의 제조 방법 |
JP4282778B2 (ja) | 1997-08-05 | 2009-06-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JPH11204434A (ja) | 1998-01-12 | 1999-07-30 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JPH11233788A (ja) | 1998-02-09 | 1999-08-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US6444390B1 (en) | 1998-02-18 | 2002-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Process for producing semiconductor thin film devices using group 14 element and high temperature oxidizing treatment to achieve a crystalline silicon film |
JP3980159B2 (ja) | 1998-03-05 | 2007-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6388270B1 (en) | 1998-03-27 | 2002-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for producing same |
US6956236B1 (en) | 1998-12-14 | 2005-10-18 | Lg. Phillips Lcd Co., Ltd. | Wiring, TFT substrate using the same and LCD |
KR100351450B1 (ko) | 1999-12-30 | 2002-09-09 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 및 그 제조방법 |
JP2001257350A (ja) * | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
TWI263336B (en) | 2000-06-12 | 2006-10-01 | Semiconductor Energy Lab | Thin film transistors and semiconductor device |
US7503975B2 (en) | 2000-06-27 | 2009-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method therefor |
US6703265B2 (en) | 2000-08-02 | 2004-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
WO2002050917A1 (en) | 2000-12-21 | 2002-06-27 | Koninklijke Philips Electronics N.V. | Thin film transistors |
JP2002246605A (ja) | 2001-02-20 | 2002-08-30 | Matsushita Electric Ind Co Ltd | 液晶表示用薄膜トランジスタの製造方法 |
US7071037B2 (en) * | 2001-03-06 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP4267266B2 (ja) * | 2001-07-10 | 2009-05-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6956126B2 (en) * | 2002-07-02 | 2005-10-18 | Wyeth | Preparation of 6-hydroxyequilenins |
TW577176B (en) * | 2003-03-31 | 2004-02-21 | Ind Tech Res Inst | Structure of thin-film transistor, and the manufacturing method thereof |
JP2005005509A (ja) | 2003-06-12 | 2005-01-06 | Canon Inc | 薄膜トランジスタ及びその製造方法 |
JP4748954B2 (ja) | 2003-07-14 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
TWI395996B (zh) | 2003-07-14 | 2013-05-11 | Semiconductor Energy Lab | 半導體裝置及顯示裝置 |
WO2005047966A1 (en) * | 2003-11-14 | 2005-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and manufacturing method thereof |
JP2005167051A (ja) | 2003-12-04 | 2005-06-23 | Sony Corp | 薄膜トランジスタおよび薄膜トランジスタの製造方法 |
KR101029944B1 (ko) | 2003-12-30 | 2011-04-19 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판의 제조 방법 |
JP4679058B2 (ja) | 2004-01-16 | 2011-04-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4557755B2 (ja) | 2004-03-11 | 2010-10-06 | キヤノン株式会社 | 基板、導電性基板および有機電界効果型トランジスタの各々の製造方法 |
JP4577114B2 (ja) | 2005-06-23 | 2010-11-10 | ソニー株式会社 | 薄膜トランジスタの製造方法および表示装置の製造方法 |
TWI267196B (en) * | 2005-07-07 | 2006-11-21 | Au Optronics Corp | Switching device for a pixel electrode and methods for fabricating the same |
JP2007035964A (ja) | 2005-07-27 | 2007-02-08 | Sony Corp | 薄膜トランジスタとその製造方法、及び表示装置 |
EP1995787A3 (en) * | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method therof |
TWI275183B (en) * | 2006-01-12 | 2007-03-01 | Ind Tech Res Inst | Structure of thin film transistor array and method for making the same |
US8357937B2 (en) * | 2006-12-19 | 2013-01-22 | Lg Display Co., Ltd. | Thin film transistor liquid crystal display device |
JP2008171871A (ja) * | 2007-01-09 | 2008-07-24 | Hitachi Displays Ltd | 高感度光センサ素子及びそれを用いた光センサ装置 |
US9176353B2 (en) | 2007-06-29 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US8921858B2 (en) | 2007-06-29 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP2009049384A (ja) * | 2007-07-20 | 2009-03-05 | Semiconductor Energy Lab Co Ltd | 発光装置 |
US8101444B2 (en) * | 2007-08-17 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP5395384B2 (ja) * | 2007-09-07 | 2014-01-22 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
KR101455304B1 (ko) | 2007-10-05 | 2014-11-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막트랜지스터, 및 박막트랜지스터를 가지는 표시장치, 및그들의 제작방법 |
US8187956B2 (en) | 2007-12-03 | 2012-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing microcrystalline semiconductor film, thin film transistor having microcrystalline semiconductor film, and photoelectric conversion device having microcrystalline semiconductor film |
TWI521712B (zh) | 2007-12-03 | 2016-02-11 | 半導體能源研究所股份有限公司 | 薄膜電晶體,包括該薄膜電晶體的顯示裝置,和其製造方法 |
US8030655B2 (en) | 2007-12-03 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, display device having thin film transistor |
JP5475250B2 (ja) * | 2008-05-28 | 2014-04-16 | 三菱電機株式会社 | 半導体装置の製造方法及び半導体装置 |
-
2008
- 2008-12-23 JP JP2008326701A patent/JP5527966B2/ja not_active Expired - Fee Related
- 2008-12-24 US US12/343,800 patent/US7968879B2/en not_active Expired - Fee Related
-
2011
- 2011-06-23 US US13/166,871 patent/US8860030B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20090166631A1 (en) | 2009-07-02 |
US7968879B2 (en) | 2011-06-28 |
US8860030B2 (en) | 2014-10-14 |
US20110248275A1 (en) | 2011-10-13 |
JP2009177156A (ja) | 2009-08-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5527966B2 (ja) | 薄膜トランジスタ | |
JP5498689B2 (ja) | 薄膜トランジスタ、及び表示装置 | |
JP6585201B2 (ja) | 半導体装置 | |
JP5101471B2 (ja) | 微結晶半導体膜及び薄膜トランジスタの作製方法 | |
JP5395415B2 (ja) | 薄膜トランジスタの作製方法 | |
JP5311955B2 (ja) | 表示装置の作製方法 | |
JP5395414B2 (ja) | 薄膜トランジスタの作製方法 | |
TWI462299B (zh) | 薄膜電晶體及顯示裝置 | |
TWI450322B (zh) | 電漿處理設備及製造半導體裝置之方法 | |
JP5311957B2 (ja) | 表示装置及びその作製方法 | |
JP5517441B2 (ja) | 半導体膜の形成方法、薄膜トランジスタの作製方法及び表示装置の作製方法 | |
US8168973B2 (en) | Thin film transistor | |
JP5437661B2 (ja) | 半導体装置及び表示装置 | |
JP5538641B2 (ja) | 薄膜トランジスタ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111111 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111111 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130730 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130731 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130806 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140218 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140313 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140408 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140415 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5527966 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |