JP5498689B2 - 薄膜トランジスタ、及び表示装置 - Google Patents
薄膜トランジスタ、及び表示装置 Download PDFInfo
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- JP5498689B2 JP5498689B2 JP2008307051A JP2008307051A JP5498689B2 JP 5498689 B2 JP5498689 B2 JP 5498689B2 JP 2008307051 A JP2008307051 A JP 2008307051A JP 2008307051 A JP2008307051 A JP 2008307051A JP 5498689 B2 JP5498689 B2 JP 5498689B2
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- semiconductor film
- film
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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Description
ここでは、通常の微結晶半導体膜をチャネル形成領域に用いた薄膜トランジスタと比較して、電界効果移動度及びオン電流の高く、オフ電流の低い薄膜トランジスタの構造について、図1乃至図10を用いて説明する。
本実施の形態では、実施の形態1に示す薄膜トランジスタの他の構造を図1(A)及び図40を用いて示す。ここでは、図1(A)を用いて示すが、適宜実施の形態1の他の図に示す薄膜トランジスタに本実施の形態を適用することができる。
本実施の形態では、電界効果移動度及びオン電流が高く、且つオフ電流の低い薄膜トランジスタの作製工程について示す。ここでは、代表例として、実施の形態1の図1(B)に示す薄膜トランジスタの作製方法について示す。
本実施の形態では、電界効果移動度及びオン電流が高く、且つオフ電流の低い薄膜トランジスタの作製工程について示す。また、実施の形態3と比較して、フォトマスク数を削減することが可能なプロセスを用いて薄膜トランジスタを作製する工程について示す。ここでは、代表例として、実施の形態1の図2に示す薄膜トランジスタの作製方法について、示す。
本実施の形態では、電界効果移動度及びオン電流が高く、且つオフ電流の低い薄膜トランジスタの作製工程について以下に示す。ここでは、代表例として、実施の形態1の図3に示す薄膜トランジスタの作製方法について示す。
次に、図4に示すような、リーク電流の低減が可能なチャネル保護型薄膜トランジスタの作製工程について以下に示す。
次に、図5に示すような、リーク電流の低減が可能な薄膜トランジスタの作製工程について以下に示す。
次に、図7に示すような、リーク電流の低減が可能な薄膜トランジスタの作製工程について以下に示す。
本実施の形態では、電界効果移動度及びオン電流が高く、且つオフ電流の低い薄膜トランジスタの作製について、以下に示す。ここでは、図1(B)に示す、薄膜トランジスタの作製工程について、以下に示す。
本実施の形態では、上記実施の形態において、半導体装置に含まれる薄膜トランジスタのゲート電極及び容量配線の形状が異なる形態を示す。従って、他は上記実施の形態と同様に行うことができ、上記実施の形態と同一部分又は同様な機能を有する部分、及び工程の繰り返しの説明は省略する。
本実施の形態では、実施の形態1乃至実施の形態8において、好ましい形態について、図31を用いて示す。
本実施の形態では、実施の形態3乃至実施の形態11で示すドナーとなる不純物元素が添加された半導体膜45を形成する前の工程について、以下に示す。ここでは、代表的に実施の形態3を用いて説明するが、適宜実施の形態4乃至実施の形態11に適用できる。
本実施の形態では、上記実施の形態での成膜工程に用いることが可能な成膜装置及びそこでの基板の流れを以下に示す。
本実施の形態では、表示装置の一形態として、上記実施の形態で示す薄膜トランジスタを有する液晶表示装置について、以下に示す。ここでは、VA(Vertical Alignment)型の液晶表示装置について、図32乃至図34を用いて説明する。VA型の液晶表示装置とは、液晶パネルの液晶分子の配列を制御する方式の一種である。VA型の液晶表示装置は、電圧が印加されていないときにパネル面に対して液晶分子が垂直方向を向く方式である。本実施の形態では、特に画素(ピクセル)をいくつかの領域(サブピクセル)に分け、それぞれ別の方向に分子を倒すよう工夫されている。これをマルチドメイン化あるいはマルチドメイン設計という。以下の説明では、マルチドメイン設計が考慮された液晶表示装置について説明する。
本実施の形態では、表示装置の一形態として、上記実施の形態で示す薄膜トランジスタを有する発光装置について、以下に示す。ここでは、発光装置が有する画素の構成について説明する。図35(A)に、画素の上面図の一形態を示し、図35(B)に図35(A)のA−Bに対応する画素の断面構造の一形態を示す。
次に、本発明の一形態である表示パネルの構成について、以下に示す。
上記実施の形態により得られる表示装置等は、アクティブマトリクス型表示装置パネルに用いることができる。即ち、それらを表示部に組み込んだ電子機器全てに上記実施の形態を実施できる。
Claims (11)
- ゲート電極と、
前記ゲート電極上のゲート絶縁膜と、
前記ゲート絶縁膜上の前記ゲート電極の端部に至らない内側領域に設けられた半導体膜と、
前記半導体膜上の第1の非晶質半導体膜と、
前記第1の非晶質半導体膜の上面及び側面、並びに前記半導体膜の側面を覆う第2の非晶質半導体膜と、
前記第2の非晶質半導体膜上のソース領域及びドレイン領域と、
前記ソース領域上のソース電極として機能する第1の配線と、
前記ドレイン領域上のドレイン電極として機能する第2の配線と、を有し、
前記半導体膜はドナーとなる不純物元素が添加されており、前記第1の配線及び前記第2の配線と、前記半導体膜とは直接接しないことを特徴とする薄膜トランジスタ。 - ゲート電極と、
前記ゲート電極上のゲート絶縁膜と、
前記ゲート絶縁膜上の前記ゲート電極の端部に至らない内側領域に設けられた半導体膜と、
前記半導体膜上の非晶質半導体膜と、
前記非晶質半導体膜上のソース領域及びドレイン領域と、
前記半導体膜、前記非晶質半導体膜、前記ソース領域及び前記ドレイン領域の側面と前記ソース領域及び前記ドレイン領域の上面の一部を覆う絶縁膜と、
前記ソース領域及び前記絶縁膜上に形成され、且つ前記ソース領域に接するソース電極として機能する第1の配線と、
前記ドレイン領域及び前記絶縁膜上に形成され、且つ前記ドレイン領域に接するドレイン電極として機能する第2の配線と、を有し、
前記半導体膜はドナーとなる不純物元素が添加されており、前記第1の配線及び前記第2の配線と、前記半導体膜とは直接接しないことを特徴とする薄膜トランジスタ。 - ゲート電極と、
前記ゲート電極上のゲート絶縁膜と、
前記ゲート絶縁膜上の前記ゲート電極の端部に至らない内側領域に設けられた半導体膜と、
前記半導体膜上の非晶質半導体膜と、
前記半導体膜及び前記非晶質半導体膜の側面と前記非晶質半導体膜の上面の一部を覆う絶縁膜と、
前記非晶質半導体膜上のソース領域及びドレイン領域と、
前記ソース領域及び前記絶縁膜上に形成され、且つ前記ソース領域に接するソース電極として機能する第1の配線と、
前記ドレイン領域及び前記絶縁膜上に形成され、且つ前記ドレイン領域に接するドレイン電極として機能する第2の配線と、を有し、
前記半導体膜はドナーとなる不純物元素が添加されており、前記第1の配線及び前記第2の配線と、前記半導体膜とは直接接しないことを特徴とする薄膜トランジスタ。 - 請求項1乃至3のいずれか一項において、
前記半導体膜は、ドナーとなる不純物元素が添加された結晶粒と、前記結晶粒を覆うゲルマニウムが添加された半導体膜であることを特徴とする薄膜トランジスタ。 - 請求項1乃至3のいずれか一項において、
前記半導体膜は、シリコンまたはゲルマニウムを含む堆積性気体とともに、シリコンまたはゲルマニウムを含むフッ化物ガスを用いて形成された微結晶半導体膜であることを特徴とする薄膜トランジスタ。 - 請求項2または3において、
前記半導体膜は微結晶半導体膜であり、
前記非晶質半導体膜は、水素、窒素、またはハロゲンを含むことを特徴とする薄膜トランジスタ。 - 請求項1において、
前記半導体膜は微結晶半導体膜であり、
前記第1の非晶質半導体膜及び前記第2の非晶質半導体膜は、水素、窒素、またはハロゲンを含むことを特徴とする薄膜トランジスタ。 - 請求項1または7において、
前記第2の非晶質半導体膜は、表面に凹部を有し、
前記凹部の深さは、前記第2の非晶質半導体膜の一番膜厚の厚い領域の1/2〜1/3であることを特徴とする薄膜トランジスタ。 - 請求項3において、
前記絶縁膜が形成されるとともに、前記非晶質半導体膜上にチャネル保護膜が形成されることを特徴とする薄膜トランジスタ。 - 請求項1乃至9のいずれか一項において、
前記半導体膜の端部は、前記ソース領域及び前記ドレイン領域と重なることを特徴とする薄膜トランジスタ。 - 請求項1乃至10のいずれか一項に記載の薄膜トランジスタをスイッチング素子として用いた表示装置。
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JP5311957B2 (ja) * | 2007-10-23 | 2013-10-09 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
JP5311955B2 (ja) * | 2007-11-01 | 2013-10-09 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
KR101479140B1 (ko) * | 2008-03-13 | 2015-01-08 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
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KR20120091243A (ko) * | 2009-10-30 | 2012-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101802406B1 (ko) * | 2009-11-27 | 2017-11-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작방법 |
KR101836067B1 (ko) * | 2009-12-21 | 2018-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터와 그 제작 방법 |
US8410486B2 (en) * | 2010-05-14 | 2013-04-02 | Semiconductor Energy Labortory Co., Ltd. | Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device |
US9230826B2 (en) | 2010-08-26 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Etching method using mixed gas and method for manufacturing semiconductor device |
US8704230B2 (en) | 2010-08-26 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP5806043B2 (ja) * | 2010-08-27 | 2015-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8558960B2 (en) | 2010-09-13 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
CN102254938B (zh) * | 2010-10-21 | 2013-07-31 | 友达光电股份有限公司 | 薄膜晶体管、具有此薄膜晶体管的像素结构及电路结构 |
US9048327B2 (en) * | 2011-01-25 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device |
JPWO2012172617A1 (ja) * | 2011-06-17 | 2015-02-23 | パナソニック株式会社 | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
WO2012172617A1 (ja) * | 2011-06-17 | 2012-12-20 | パナソニック株式会社 | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
JP6153296B2 (ja) * | 2011-06-17 | 2017-06-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR101947808B1 (ko) * | 2012-02-29 | 2019-04-25 | 엘지디스플레이 주식회사 | 박막트랜지스터 어레이 기판 및 그 제조방법 |
CN103489918A (zh) * | 2012-06-08 | 2014-01-01 | 京东方科技集团股份有限公司 | 一种薄膜晶体管和阵列基板及其制造方法 |
US9818763B2 (en) | 2013-07-12 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing display device |
TWI550112B (zh) * | 2015-04-10 | 2016-09-21 | 欣欣天然氣股份有限公司 | 光電轉換元件的基板的製造方法 |
CN105355593B (zh) * | 2015-12-07 | 2018-07-10 | 深圳市华星光电技术有限公司 | Tft基板的制作方法及tft基板 |
CN105826398A (zh) * | 2016-06-15 | 2016-08-03 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、阵列基板及制作方法 |
CN107591415B (zh) * | 2017-08-29 | 2021-08-06 | 惠科股份有限公司 | 一种阵列基板及其制造方法 |
JP2019054143A (ja) * | 2017-09-15 | 2019-04-04 | 株式会社東芝 | 接続構造およびその製造方法ならびにセンサ |
JP7222946B2 (ja) * | 2020-03-24 | 2023-02-15 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
CN113193049B (zh) * | 2021-04-29 | 2024-04-26 | Tcl华星光电技术有限公司 | 一种半导体器件及其制作方法、显示面板 |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56122123A (en) | 1980-03-03 | 1981-09-25 | Shunpei Yamazaki | Semiamorphous semiconductor |
JPS5892217A (ja) | 1981-11-28 | 1983-06-01 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
JPS60160170A (ja) | 1984-01-31 | 1985-08-21 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ |
JPS6267872A (ja) | 1985-09-20 | 1987-03-27 | Toshiba Corp | 非晶質シリコン薄膜トランジスタ |
JPS63258072A (ja) | 1987-04-15 | 1988-10-25 | Nec Corp | 電界効果トランジスタ |
JPH0240055Y2 (ja) * | 1987-09-30 | 1990-10-25 | ||
JPH0217647A (ja) * | 1988-07-06 | 1990-01-22 | Toppan Printing Co Ltd | 薄膜トランジスタおよびその製造方法 |
JPH0747876Y2 (ja) | 1988-10-19 | 1995-11-01 | 富士ゼロックス株式会社 | 薄膜トラジスタ |
US5221631A (en) | 1989-02-17 | 1993-06-22 | International Business Machines Corporation | Method of fabricating a thin film transistor having a silicon carbide buffer layer |
JP2839529B2 (ja) | 1989-02-17 | 1998-12-16 | 株式会社東芝 | 薄膜トランジスタ |
EP0459763B1 (en) | 1990-05-29 | 1997-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Thin-film transistors |
US5849601A (en) | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
JP2791422B2 (ja) | 1990-12-25 | 1998-08-27 | 株式会社 半導体エネルギー研究所 | 電気光学装置およびその作製方法 |
US5514879A (en) | 1990-11-20 | 1996-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Gate insulated field effect transistors and method of manufacturing the same |
KR950013784B1 (ko) | 1990-11-20 | 1995-11-16 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터 |
US7115902B1 (en) | 1990-11-20 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US7098479B1 (en) | 1990-12-25 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US7576360B2 (en) | 1990-12-25 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device which comprises thin film transistors and method for manufacturing the same |
JPH05190857A (ja) * | 1992-01-10 | 1993-07-30 | Toshiba Corp | 薄膜トランジスタ |
JPH05226656A (ja) * | 1992-02-13 | 1993-09-03 | Hitachi Ltd | 薄膜半導体装置及びその製造方法 |
JP2924441B2 (ja) * | 1992-04-27 | 1999-07-26 | 日本電気株式会社 | 薄膜トランジスタ及びその製造方法 |
JPH06326312A (ja) | 1993-05-14 | 1994-11-25 | Toshiba Corp | アクティブマトリクス型表示装置 |
US5521108A (en) * | 1993-09-15 | 1996-05-28 | Lsi Logic Corporation | Process for making a conductive germanium/silicon member with a roughened surface thereon suitable for use in an integrated circuit structure |
JPH0855993A (ja) * | 1994-08-12 | 1996-02-27 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
US5793072A (en) * | 1996-02-28 | 1998-08-11 | International Business Machines Corporation | Non-photosensitive, vertically redundant 2-channel α-Si:H thin film transistor |
JPH10270701A (ja) * | 1997-03-27 | 1998-10-09 | Advanced Display:Kk | 薄膜トランジスタおよびその製法 |
KR100257158B1 (ko) * | 1997-06-30 | 2000-05-15 | 김영환 | 박막 트랜지스터 및 그의 제조 방법 |
US6197624B1 (en) * | 1997-08-29 | 2001-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Method of adjusting the threshold voltage in an SOI CMOS |
JPH11177094A (ja) * | 1997-12-08 | 1999-07-02 | Advanced Display Inc | 半導体薄膜トランジスタおよび該半導体薄膜トランジスタを含む半導体薄膜トランジスタアレイ基板 |
TW405269B (en) * | 1999-02-09 | 2000-09-11 | Ind Tech Res Inst | Manufacture method of thin film transistor |
US6703265B2 (en) * | 2000-08-02 | 2004-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP3716755B2 (ja) * | 2001-04-05 | 2005-11-16 | 株式会社日立製作所 | アクティブマトリクス型表示装置 |
JP4748954B2 (ja) | 2003-07-14 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
US7205171B2 (en) | 2004-02-11 | 2007-04-17 | Au Optronics Corporation | Thin film transistor and manufacturing method thereof including a lightly doped channel |
KR100721555B1 (ko) * | 2004-08-13 | 2007-05-23 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조 방법 |
TWI243484B (en) * | 2004-12-10 | 2005-11-11 | Au Optronics Corp | Thin film transistor and method of making the same |
US7952099B2 (en) | 2006-04-21 | 2011-05-31 | Beijing Boe Optoelectronics Technology Co., Ltd. | Thin film transistor liquid crystal display array substrate |
CN100489631C (zh) * | 2006-05-23 | 2009-05-20 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
JP4200458B2 (ja) * | 2006-05-10 | 2008-12-24 | ソニー株式会社 | 薄膜トランジスタの製造方法 |
US7636135B2 (en) * | 2006-09-11 | 2009-12-22 | Beijing Boe Optoelectronics Technology Co., Ltd | TFT-LCD array substrate and method for manufacturing the same |
CN100454559C (zh) * | 2006-09-11 | 2009-01-21 | 北京京东方光电科技有限公司 | 一种tft矩阵结构及其制造方法 |
CN100454558C (zh) * | 2006-09-11 | 2009-01-21 | 北京京东方光电科技有限公司 | 一种tft矩阵结构及其制造方法 |
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TWI481029B (zh) | 2015-04-11 |
US7994502B2 (en) | 2011-08-09 |
KR20090057933A (ko) | 2009-06-08 |
US8558236B2 (en) | 2013-10-15 |
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