TWI550112B - 光電轉換元件的基板的製造方法 - Google Patents

光電轉換元件的基板的製造方法 Download PDF

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TWI550112B
TWI550112B TW104111651A TW104111651A TWI550112B TW I550112 B TWI550112 B TW I550112B TW 104111651 A TW104111651 A TW 104111651A TW 104111651 A TW104111651 A TW 104111651A TW I550112 B TWI550112 B TW I550112B
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single crystal
substrate
photoelectric conversion
crystal germanium
germanium wafer
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陳昇暉
曾少澤
曹昭陽
張正陽
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欣欣天然氣股份有限公司
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Priority to US14/919,715 priority patent/US20160300977A1/en
Priority to CN201510710897.1A priority patent/CN106057963A/zh
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Description

光電轉換元件的基板的製造方法
本發明是有關於一種半導體基板，尤其是有關於一種光電轉換元件的基板及其製造方法。
為提昇太陽能電池之效率，增加入射光子的吸收率即是基本的方法之一，然而太陽能電池能吸收的入射光波長取決於太陽能電池材料本身的能隙。太陽光的頻譜為250奈米(nm)~2500nm，目前並無任何一種材料能夠吸收如此寬廣的頻譜，因此多接面(multi-junction)結構是吸收寬廣頻譜的較佳選擇。
然而，針對Ⅲ-V族多接面太陽能電池來說，其矽基板存有一個明顯的缺點，即是矽本身的晶格常數對於Ⅲ-V族材料來說太小，如此不容易在矽上面成長高品質、高結晶率的Ⅲ-V族材料。另一方面，鍺對於砷化鎵(GaAs)則是有理想的晶格匹配，即使選擇磷化鎵(GaP)與磷化銦(InP)的化合物系列堆疊在鍺基板上也是一個不錯的選擇。雖然鍺有著良好的晶格匹配可在其上成長高品質的砷化鎵層，但是選擇鍺基板來當作多接面太陽能電池的基板時，由於鍺本身的能隙過低，其所產生的電流過大，與多接面太陽能電池頂 層的砷化鎵或磷化銦鎵(InGaP)無法達到良好的電流匹配。另外，鍺基板還有成本高且熱傳性較差的缺點。
本發明提出一種光電轉換元件的基板的製造方法，其所製造出的基板能取代習知技術的鍺基板。
本發明提出一種光電轉換元件的基板，以取代習知技術的鍺基板。
本發明實施例所提供的光電轉換元件的基板的製造方法包括下列步驟：將單晶矽晶圓置入機台的腔體內，其中腔體內有鍺靶材或矽鍺靶材；以及進行物理氣相沉積製程，以於單晶矽晶圓上形成單晶鍺薄膜或單晶矽鍺薄膜。
在本發明的一實施例中，上述之製造方法更包括在進行物理氣相沉積(physical vapor deposition,PVD)製程之前，將單晶矽晶圓加熱至攝氏150度以上，並使腔體內的壓力小於或等於9×10-6托爾(torr)； 在本發明的一實施例中，在進行物理氣相沉積製程之前，係將單晶矽晶圓加熱至攝氏200度至500度之間。
在本發明的一實施例中，在進行物理氣相沉積製程之前，係將單晶矽晶圓加熱至攝氏300度。
在本發明的一實施例中，在進行物理氣相沉積製程之前，係使腔體內的壓力小於或等於1×10-5托爾。
在本發明的一實施例中，在進行物理氣相沉積製程時，腔體內的工作壓力小於或等於5×10-1托爾。
在本發明的一實施例中，上述之物理氣相沉積製程包括濺鍍製程。
在本發明的一實施例中，上述之製造方法更包括在將單晶矽晶圓置入腔體之前，清洗單晶矽晶圓。
在本發明的一實施例中，上述之清洗單晶矽晶圓的步驟包括：進行RCA清洗流程；以及將單晶矽晶圓浸泡在氫氟酸中。
在本發明的一實施例中，上述之單晶矽晶圓的晶向為(100)、(111)、(220)、(311)、(222)、(400)、(311)或(422)。
本發明實施例所提供的光電轉換元件的基板包括單晶矽晶圓以及單晶薄膜，其中單晶薄膜配置於單晶矽晶圓上，且此單晶薄膜為單晶鍺薄膜或單晶矽鍺薄膜。
本發明之光電轉換元件的基板及其製造方法中，因藉由單晶矽晶圓及形成於其上的單晶鍺薄膜或單晶矽鍺薄膜作為光電轉換元件的基板，以取代習知技術的鍺基板，所以能克服鍺基板的缺點。
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。
100‧‧‧光電轉換元件的基板
110‧‧‧單晶矽晶圓
120‧‧‧單晶薄膜
200‧‧‧機台
210‧‧‧腔體
211‧‧‧進氣口
212‧‧‧出氣口
220‧‧‧靶材
230‧‧‧陽極
240‧‧‧陰極
250‧‧‧加熱器
P‧‧‧電漿
S110、S120‧‧‧步驟
圖1是本發明一實施例之光電轉換元件的基板的製造方法的流程圖。
圖2A至圖2B是本發明一實施例之應用電漿濺鍍機台製造光電轉換元件的基板的示意圖。
圖3是本發明一實施例之光電轉換元件的基板的示意圖。
本發明之光電轉換元件的基板包括單晶矽晶圓及堆疊於其上的單晶薄膜，其中單晶薄膜可為單晶鍺薄膜或單晶矽鍺薄膜。以下將配合圖式來說明本發明一實施例之光電轉換元件的基板的製造方法。
圖1是本發明一實施例之光電轉換元件的基板的製造方法的流程圖。圖2A至圖2B是本發明一實施例之應用電漿濺鍍(plasma sputtering)機台製造光電轉換元件的基板的示意圖。請先參照圖1與圖2A，本實施例的光電轉換元件的基板的製造方法包括下列步驟：首先，如步驟S110所示，將單晶矽晶圓110置入機台200的腔體210內，其中腔體210內有靶材220。此靶材220可為鍺靶材或矽鍺靶材。在圖2A中，單晶矽晶圓110與靶材220例如是位於腔體210內的陽極230與陰極240之間，其中單晶矽晶圓110鄰近陽極230，而靶材220鄰近陰極240。單晶矽晶圓110的晶向可為(100)、(111)、(220)、(311)、(222)、(400)、(311)或(422)。此外，機台200為物理氣相沉積機台，如蒸鍍(evaporation)機台或濺鍍機台等，其中濺鍍機台依照濺鍍源又分成電漿濺鍍機台、離子束濺鍍機台等，本實施例是以電漿濺鍍機台為例，但本發明並不限制機台的種類。另外，腔體210具有進氣口211與出氣口212，其中進氣口211用以通入氣體，而出氣口212用以抽真空。
為了在後續步驟中成長出高品質的單晶薄膜，在將單晶矽晶圓110置入腔體210之前，可先清洗單晶矽晶圓110。清洗單晶矽晶圓110的步驟例如是先進行RCA清洗流 程，接著再將單晶矽晶圓110浸泡在氫氟酸中，以去除單晶矽晶圓110上的原生氧化層。在一實施例中，上述之氫氟酸的濃度約為1~5%，例如2%，而浸泡時間約為1~5分鐘，例如2分鐘，但可依實際需求而調整，本發明並不加以限制。
接著，如步驟S120及圖2B所示，進行物理氣相沉積製程，以於單晶矽晶圓110上形成單晶薄膜120。此單晶薄膜120為單晶鍺薄膜或單晶矽鍺薄膜。當要形成單晶鍺薄膜時，靶材220選用鍺靶材，而當要形成單晶矽鍺薄膜時，靶材220選用矽鍺靶材。為了成長出高品質的單晶薄膜120，在進行物理氣相沉積製程之前，可先將單晶矽晶圓110加熱至攝氏150度以上，並進行抽真空，使腔體210內的壓力小於或等於9×10-6托爾。在一實施例中，可將單晶矽晶圓110加熱至攝氏200度至500度之間，例如攝氏300度或攝氏400度。此外，加熱單晶矽晶圓110的方法可藉由腔體210內的加熱器250將單晶矽晶圓110加熱至預定的溫度後，再等待一段時間，使單晶矽晶圓110的溫度穩定之後，再進行物理氣相沉積製程。等待的時間約為5~15分鐘，例如15分鐘，可依據實際狀況而調整。另外，在一實施例中，在進行物理氣相沉積製程之前，係使腔體210內的壓力小於或等於1×10-5托爾。
本實施例之物理氣相沉積製程是以濺鍍製程為例，其係經由進氣口211通入惰性氣體(如氬氣)至腔體210內。之後，藉由陰極240與陽極230之間產生高壓，以解離氣體分子而形成電漿P。如此，可藉由電漿P中的正離子(如Ar+)轟擊靶材220，使靶材220的材料濺射出而沉積於單晶矽晶圓110上，進而於單晶矽晶圓110上成長一層單晶薄膜 120。為了提升單晶薄膜120的品質，在進行物理氣相沉積製程時，可將腔體210內的工作壓力控制在小於或等於5×10-1托爾。由於濺鍍製程為本發明所屬技術領域具有通常知識者所熟知，在此不加以詳述。此外，在一些實施例中，也可藉由蒸鍍機台來進行物理氣相沉積製程，本發明並不限定進行物理氣相沉積製程時所使用的機台。在另一實施例中，可藉由磁控濺鍍(magnetron sputtering)機台來沉積單晶薄膜120，以提升單晶薄膜120的品質。
圖3是本發明一實施例之光電轉換元件的基板的示意圖。請參照圖3，由上述光電轉換元件的基板的製造方法所製造出的光電轉換元件的基板100包括單晶矽晶圓110以及單晶薄膜120，其中單晶薄膜120配置於單晶矽晶圓110上，且此單晶薄膜120為單晶鍺薄膜或單晶矽鍺薄膜。單晶矽晶圓110的晶向例如為(100)、(111)、(220)、(311)、(222)、(400)、(311)或(422)，而單晶薄膜120的晶向大致上與單晶矽晶圓110的晶向相同。
在上述製造方法中，由於可在較低溫的環境下成長單晶薄膜120，所以能有效地克服矽、鍺的熱膨脹係數差異所造成的熱應力缺陷。而且，相較於化學氣相沉積製程，物理氣相沉積製程無須使用具有毒性或易燃的氣體，因此對於工業安全較有保障。另外，物理氣相沉積機台的成本較化學氣相沉積機台的成本低廉許多，有助於降低光電轉換元件的基板100的生產成本。
再者，本實施例之光電轉換元件的基板100是在單晶矽晶圓110上成長低表面缺陷之單晶薄膜120，能夠取代價格昂貴的鍺晶圓。將此光電轉換元件的基板100作為太陽 能電池或其他光電轉換元件的基板時，將可降低太陽能電池或其他光電轉換元件之成本。此外，除了將光電轉換元件的基板100應用於太陽能電池外，因鍺之晶格常數近似砷化鎵，所以可達到整合Ⅲ-V族半導體化合物與矽製程技術的目標，進而能夠單石積體化砷化鎵光電元件於光電轉換元件的基板100上。另外，鍺之能隙較矽低，其主要吸收頻譜波段集中於紅外光區段，而且鍺也具有高於矽的電子與電洞載子遷移率，再加上鍺與矽之材料性質非常相近，使其容易與矽製程技術整合，所以鍺較矽更適合用於長距離傳輸的光通訊之光電元件上，如紅外光檢測器與光調制器等元件。因此，本實施例之光電轉換元件的基板100也可應用於長距離傳輸的光通訊光電元件。需說明的是，本發明實施例之光電轉換元件的基板100並不僅限於應用在太陽能電池及用於長距離傳輸的光通訊光電元件。
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
S110、S120‧‧‧步驟

Claims (7)

  1. 一種光電轉換元件的基板的製造方法，包括：將一矽晶圓置入一機台的一腔體內，其中該腔體內有一矽鍺靶材；以及進行一物理氣相沉積製程，以於該矽晶圓上形成一單晶矽鍺薄膜，其特徵在於，該矽晶圓為單晶矽晶圓，且在進行該物理氣相沉積製程之前，將該單晶矽晶圓加熱至攝氏150度至500度之間，並使該腔體內的壓力小於或等於1×10-5托爾。
  2. 如申請專利範圍第1項所述之光電轉換元件的基板的製造方法，其中在進行該物理氣相沉積製程之前，係使該腔體內的壓力小於或等於9×10-6托爾。
  3. 如申請專利範圍第1項所述之光電轉換元件的基板的製造方法，其中在進行該物理氣相沉積製程時，該腔體內的工作壓力小於或等於5×10-1托爾。
  4. 如申請專利範圍第1項所述之光電轉換元件的基板的製造方法，其中該物理氣相沉積製程包括濺鍍製程。
  5. 如申請專利範圍第1項所述之光電轉換元件的基板的製造方法，更包括在將該單晶矽晶圓置入該腔體之前，清洗該單晶矽晶圓。
  6. 如申請專利範圍第5項所述之光電轉換元件的基板的製造方法，其中清洗該單晶矽晶圓的步驟包括：進行一RCA清洗流程；以及將該單晶矽晶圓浸泡在氫氟酸中。
  7. 如申請專利範圍第1項所述之光電轉換元件的基板的製造方法，其中該單晶矽晶圓的晶向為(100)、(111)、(220)、(311)、(222)、(400)、(311)或(422)。
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