CN106057963A - 光电转换元件的基板及其制造方法 - Google Patents

光电转换元件的基板及其制造方法 Download PDF

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CN106057963A
CN106057963A CN201510710897.1A CN201510710897A CN106057963A CN 106057963 A CN106057963 A CN 106057963A CN 201510710897 A CN201510710897 A CN 201510710897A CN 106057963 A CN106057963 A CN 106057963A
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conversion element
silicon wafer
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陈升晖
曾少泽
曹昭阳
张正阳
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Shin Shin Natural Gas Co ltd
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Abstract

一种光电转换元件的基板的制造方法包括下列步骤。将单晶硅晶圆置入机台的腔体内，其中腔体内有锗靶材或硅锗靶材。接着，进行物理气相沉积工艺，以于单晶硅晶圆上形成单晶锗薄膜或单晶硅锗薄膜。此制造方法可降低光电转换元件的基板的生产成本。此外，本发明另提出一种光电转换元件的基板。

Description

光电转换元件的基板及其制造方法
技术领域
本发明涉及一种半导体基板，尤其涉及一种光电转换元件的基板及其制造方法。
背景技术
为提升太阳能电池的效率，增加入射光子的吸收率即是基本的方法之一，然而太阳能电池能吸收的入射光波长取决于太阳能电池材料本身的能隙。太阳光的频谱为250纳米(nm)～2500nm，目前并无任何一种材料能够吸收如此宽广的频谱，因此多接面(multi-junction)结构是吸收宽广频谱的较佳选择。
然而，针对Ⅲ-Ⅴ族多接面太阳能电池来说，其硅基板存有一个明显的缺点，即是硅本身的晶格常数对于Ⅲ-Ⅴ族材料来说太小，如此不容易在硅上面成长高品质、高结晶率的Ⅲ-Ⅴ族材料。另一方面，锗对于砷化镓(GaAs)则是有理想的晶格匹配，即使选择磷化镓(GaP)与磷化铟(InP)的化合物系列堆迭在锗基板上也是一个不错的选择。虽然锗有着良好的晶格匹配可在其上成长高品质的砷化镓层，但是选择锗基板来当作多接面太阳能电池的基板时，由于锗本身的能隙过低，其所产生的电流过大，与多接面太阳能电池顶层的砷化镓或磷化铟镓(InGaP)无法达到良好的电流匹配。另外，锗基板还有成本高且热传性较差的缺点。
发明内容
本发明提出一种光电转换元件的基板的制造方法，其所制造出的基板能取代现有技术的锗基板。
本发明提出一种光电转换元件的基板，以取代现有技术的锗基板。
本发明实施例所提供的光电转换元件的基板的制造方法包括下列步骤：将单晶硅晶圆置入机台的腔体内，其中腔体内有锗靶材或硅锗靶材；以及进行物理气相沉积(physical vapor deposition,PVD)工艺，以于单晶硅晶圆上形成单晶锗薄膜或单晶硅锗薄膜。
在本发明的一实施例中，上述的制造方法更包括在进行物理气相沉积工艺之前，将单晶硅晶圆加热至摄氏150度以上，并使腔体内的压力小于或等于9×10-6托尔(torr)；
在本发明的一实施例中，在进行物理气相沉积工艺之前，将单晶硅晶圆加热至摄氏200度至500度之间。
在本发明的一实施例中，在进行物理气相沉积工艺之前，将单晶硅晶圆加热至摄氏300度。
在本发明的一实施例中，在进行物理气相沉积工艺之前，使腔体内的压力小于或等于1×10-5托尔。
在本发明的一实施例中，在进行物理气相沉积工艺时，腔体内的工作压力小于或等于5×10-1托尔。
在本发明的一实施例中，上述的物理气相沉积工艺包括溅镀工艺。
在本发明的一实施例中，上述的制造方法更包括在将单晶硅晶圆置入腔体之前，清洗单晶硅晶圆。
在本发明的一实施例中，上述的清洗单晶硅晶圆的步骤包括：进行RCA清洗流程；以及将单晶硅晶圆浸泡在氢氟酸中。
在本发明的一实施例中，上述的单晶硅晶圆的晶向为(100)、(111)、(220)、(311)、(222)、(400)、(311)或(422)。
本发明实施例所提供的光电转换元件的基板包括单晶硅晶圆以及单晶薄膜，其中单晶薄膜配置于单晶硅晶圆上，且此单晶薄膜为单晶锗薄膜或单晶硅锗薄膜。
本发明的光电转换元件的基板及其制造方法中，因借由单晶硅晶圆及形成于其上的单晶锗薄膜或单晶硅锗薄膜作为光电转换元件的基板，以取代现有技术的锗基板，所以能克服锗基板的缺点。
附图说明
图1是本发明一实施例的光电转换元件的基板的制造方法的流程图。
图2A至图2B是本发明一实施例的应用等离子体溅镀(plasmasputtering)机台制造光电转换元件的基板的示意图。
图3是本发明一实施例的光电转换元件的基板的示意图。
具体实施方式
本发明的光电转换元件的基板包括单晶硅晶圆及堆迭于其上的单晶薄膜，其中单晶薄膜可为单晶锗薄膜或单晶硅锗薄膜。以下将配合图式来说明本发明一实施例的光电转换元件的基板的制造方法。
图1是本发明一实施例的光电转换元件的基板的制造方法的流程图。图2A至图2B是本发明一实施例的应用等离子体溅镀机台制造光电转换元件的基板的示意图。请先参照图1与图2A，本实施例的光电转换元件的基板的制造方法包括下列步骤：如步骤S110所示，将单晶硅晶圆110置入机台200的腔体210内，其中腔体210内有靶材220。此靶材220可为锗靶材或硅锗靶材。在图2A中，单晶硅晶圆110与靶材220例如是位于腔体210内的阳极230与阴极240之间，其中单晶硅晶圆110邻近阳极230，而靶材220邻近阴极240。单晶硅晶圆110的晶向可为(100)、(111)、(220)、(311)、(222)、(400)、(311)或(422)。此外，机台200为物理气相沉积机台，如蒸镀(evaporation)机台或溅镀机台等，其中溅镀机台依照溅镀源又分成等离子体溅镀机台、离子束溅镀机台等，本实施例是以等离子体溅镀机台为例，但本发明并不限制机台的种类。另外，腔体210具有进气口211与出气口212，其中进气口211用以通入气体，而出气口212用以抽真空。
为了在后续步骤中成长出高品质的单晶薄膜，在将单晶硅晶圆110置入腔体210之前，可先清洗单晶硅晶圆110。清洗单晶硅晶圆110的步骤例如是先进行RCA清洗流程，接着再将单晶硅晶圆110浸泡在氢氟酸中，以去除单晶硅晶圆110上的原生氧化层。在一实施例中，上述的氢氟酸的浓度约为1-5％，例如2％，而浸泡时间约为1-5分钟，例如2分钟，但可依实际需求而调整，本发明并不加以限制。
接着，如步骤S120及图2B所示，进行物理气相沉积工艺，以于单晶硅晶圆110上形成单晶薄膜120。此单晶薄膜120为单晶锗薄膜或单晶硅锗薄膜。当要形成单晶锗薄膜时，靶材220选用锗靶材，而当要形成单晶硅锗薄膜时，靶材220选用硅锗靶材。为了成长出高品质的单晶薄膜120，在进行物理气相沉积工艺之前，可先将单晶硅晶圆110加热至摄氏150度以上，并进行抽真空，使腔体210内的压力小于或等于9×10-6托尔。在一实施例中，可将单晶硅晶圆110加热至摄氏200度至500度之间，例如摄氏300度或摄氏400度。此外，加热单晶硅晶圆110的方法可借由腔体210内的加热器250将单晶硅晶圆110加热至预定的温度后，再等待一段时间，使单晶硅晶圆110的温度稳定之后，再进行物理气相沉积工艺。等待的时间约为5-15分钟，例如15分钟，可依据实际状况而调整。另外，在一实施例中，在进行物理气相沉积工艺之前，使腔体210内的压力小于或等于1×10-5托尔。
本实施例的物理气相沉积工艺是以溅镀工艺为例，其经由进气口211通入惰性气体(如氩气)至腔体210内。之后，借由阴极240与阳极230之间产生高压，以解离气体分子而形成等离子体P。如此，可借由等离子体P中的正离子(如Ar+)轰击靶材220，使靶材220的材料溅射出而沉积于单晶硅晶圆110上，进而于单晶硅晶圆110上成长一层单晶薄膜120。为了提升单晶薄膜120的品质，在进行物理气相沉积工艺时，可将腔体210内的工作压力控制在小于或等于5×10-1托尔。由于溅镀工艺为本发明所属技术领域中具有通常知识者所熟知，在此不加以详述。此外，在一些实施例中，也可借由蒸镀机台来进行物理气相沉积工艺，本发明并不限定进行物理气相沉积工艺时所使用的机台。在另一实施例中，可借由磁控溅镀(magnetronsputtering)机台来沉积单晶薄膜120，以提升单晶薄膜120的品质。
图3是本发明一实施例的光电转换元件的基板的示意图。请参照图3，由上述光电转换元件的基板的制造方法所制造出的光电转换元件的基板100包括单晶硅晶圆110以及单晶薄膜120，其中单晶薄膜120配置于单晶硅晶圆110上，且此单晶薄膜120为单晶锗薄膜或单晶硅锗薄膜。单晶硅晶圆110的晶向例如为(100)、(111)、(220)、(311)、(222)、(400)、(311)或(422)，而单晶薄膜120的晶向大致上与单晶硅晶圆110的晶向相同。
在上述制造方法中，由于可在较低温的环境下成长单晶薄膜120，所以能有效地克服硅、锗的热膨胀系数差异所造成的热应力缺陷。而且，相较于化学气相沉积工艺，物理气相沉积工艺无须使用具有毒性或易燃的气体，因此对于工业安全较有保障。另外，物理气相沉积机台的成本较化学气相沉积机台的成本低廉许多，有助于降低光电转换元件的基板100的生产成本。
再者，本实施例的光电转换元件的基板100是在单晶硅晶圆110上成长低表面缺陷的单晶薄膜120，能够取代价格昂贵的锗晶圆。将此光电转换元件的基板100作为太阳能电池或其他光电转换元件的基板时，将可降低太阳能电池或其他光电转换元件的成本。此外，除了将光电转换元件的基板100应用于太阳能电池外，因锗的晶格常数近似砷化镓，所以可达到整合Ⅲ-Ⅴ族半导体化合物与硅工艺技术的目标，进而能够单石积体化砷化镓光电元件于光电转换元件的基板100上。另外，锗的能隙较硅低，其主要吸收频谱波段集中于红外光区段，而且锗也具有高于硅的电子与电洞载子迁移率，再加上锗与硅的材料性质非常相近，使其容易与硅工艺技术整合，所以锗较硅更适合用于长距离传输的光通讯的光电元件上，如红外光检测器与光调制器等元件。因此，本实施例的光电转换元件的基板100也可应用于长距离传输的光通讯光电元件。需说明的是，本发明实施例的光电转换元件的基板100并不仅限于应用在太阳能电池及用于长距离传输的光通讯光电元件。
以上所述，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制，虽然本发明已以较佳实施例揭露如上，然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内，当可利用上述揭示的方法及技术内容作出些许的更动或修饰为等同变化的等效实施例，但凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均仍属于本发明技术方案的范围内。

Claims (10)

1.一种光电转换元件的基板的制造方法，其特征在于，包括：
将单晶硅晶圆置入机台的腔体内，其中该腔体内有锗靶材或硅锗靶材；以及
进行物理气相沉积工艺，以于该单晶硅晶圆上形成单晶锗薄膜或单晶硅锗薄膜。
2.如权利要求1所述的光电转换元件的基板的制造方法，其特征在于，还包括在进行该物理气相沉积工艺之前，将该单晶硅晶圆加热至摄氏150度以上，并使该腔体内的压力小于或等于9×10-6托尔。
3.如权利要求2所述的光电转换元件的基板的制造方法，其特征在于，在进行该物理气相沉积工艺之前，将该单晶硅晶圆加热至摄氏200度至500度之间。
4.如权利要求2所述的光电转换元件的基板的制造方法，其特征在于，在进行该物理气相沉积工艺之前，使该腔体内的压力小于或等于1×10-5托尔。
5.如权利要求1所述的光电转换元件的基板的制造方法，其特征在于，在进行该物理气相沉积工艺时，该腔体内的工作压力小于或等于5×10-1托尔。
6.如权利要求1所述的光电转换元件的基板的制造方法，其特征在于，该物理气相沉积工艺包括溅镀工艺。
7.如权利要求1所述的光电转换元件的基板的制造方法，其特征在于，还包括在将该单晶硅晶圆置入该腔体之前，清洗该单晶硅晶圆。
8.如权利要求7所述的光电转换元件的基板的制造方法，其特征在于，清洗该单晶硅晶圆的步骤包括：
进行RCA清洗流程；以及
将该单晶硅晶圆浸泡在氢氟酸中。
9.如权利要求1所述的光电转换元件的基板的制造方法，其特征在于，该单晶硅晶圆的晶向为(100)、(111)、(220)、(311)、(222)、(400)、(311)或(422)。
10.一种光电转换元件的基板，其特征在于，包括：
单晶硅晶圆；以及
单晶薄膜，配置于该单晶硅晶圆上，其中该单晶薄膜为单晶锗薄膜或单晶硅锗薄膜。
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