DE3876303D1 - Verfahren zur herstellung eines duennschichttransistors. - Google Patents

Verfahren zur herstellung eines duennschichttransistors.

Info

Publication number
DE3876303D1
DE3876303D1 DE8888109197T DE3876303T DE3876303D1 DE 3876303 D1 DE3876303 D1 DE 3876303D1 DE 8888109197 T DE8888109197 T DE 8888109197T DE 3876303 T DE3876303 T DE 3876303T DE 3876303 D1 DE3876303 D1 DE 3876303D1
Authority
DE
Germany
Prior art keywords
thin
producing
layer transistor
transistor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888109197T
Other languages
English (en)
Other versions
DE3876303T2 (de
Inventor
Ltd Watanabe
Ltd Mouri
Ltd Yoshida
Ltd Nomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Application granted granted Critical
Publication of DE3876303D1 publication Critical patent/DE3876303D1/de
Publication of DE3876303T2 publication Critical patent/DE3876303T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/913—Diverse treatments performed in unitary chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Plasma & Fusion (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
DE8888109197T 1987-06-09 1988-06-09 Verfahren zur herstellung eines duennschichttransistors. Expired - Fee Related DE3876303T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62142268A JPH0640550B2 (ja) 1987-06-09 1987-06-09 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
DE3876303D1 true DE3876303D1 (de) 1993-01-14
DE3876303T2 DE3876303T2 (de) 1993-04-01

Family

ID=15311400

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888109197T Expired - Fee Related DE3876303T2 (de) 1987-06-09 1988-06-09 Verfahren zur herstellung eines duennschichttransistors.

Country Status (4)

Country Link
US (1) US4859617A (de)
EP (1) EP0294802B1 (de)
JP (1) JPH0640550B2 (de)
DE (1) DE3876303T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5214002A (en) * 1989-10-25 1993-05-25 Agency Of Industrial Science And Technology Process for depositing a thermal CVD film of Si or Ge using a hydrogen post-treatment step and an optional hydrogen pre-treatment step
KR930703707A (ko) * 1991-01-30 1993-11-30 죤 죠셉 우르수 폴리실리콘 박막 트랜지스터
US5633175A (en) * 1991-12-19 1997-05-27 Hitachi, Ltd. Process for stripping photoresist while producing liquid crystal display device
US5254480A (en) * 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
JPH05326557A (ja) * 1992-05-20 1993-12-10 Matsushita Electric Ind Co Ltd 薄膜の堆積方法及び薄膜トランジスタの製造方法
US5470768A (en) 1992-08-07 1995-11-28 Fujitsu Limited Method for fabricating a thin-film transistor
KR960010338B1 (ko) * 1992-12-30 1996-07-30 현대전자산업 주식회사 폴리실리콘 박막트랜지스터의 수소화처리방법
JPH10508656A (ja) * 1994-10-11 1998-08-25 ゲレスト インコーポレーテツド コンフオーマルなチタン系フイルムおよびその製造方法
WO1997048115A1 (en) * 1996-06-12 1997-12-18 The Trustees Of Princeton University Plasma treatment of conductive layers
US5891793A (en) * 1997-04-04 1999-04-06 Advanced Micro Devices, Inc. Transistor fabrication process employing a common chamber for gate oxide and gate conductor formation
US6749687B1 (en) * 1998-01-09 2004-06-15 Asm America, Inc. In situ growth of oxide and silicon layers
DE10080457T1 (de) * 1999-02-12 2001-04-26 Gelest Inc CVD-Abscheidung von Wolframnitrid
US6410432B1 (en) 1999-04-27 2002-06-25 Tokyo Electron Limited CVD of integrated Ta and TaNx films from tantalum halide precursors
US6268288B1 (en) 1999-04-27 2001-07-31 Tokyo Electron Limited Plasma treated thermal CVD of TaN films from tantalum halide precursors
US6265311B1 (en) 1999-04-27 2001-07-24 Tokyo Electron Limited PECVD of TaN films from tantalum halide precursors
US6413860B1 (en) 1999-04-27 2002-07-02 Tokyo Electron Limited PECVD of Ta films from tanatalum halide precursors
US6410433B1 (en) 1999-04-27 2002-06-25 Tokyo Electron Limited Thermal CVD of TaN films from tantalum halide precursors
US6348420B1 (en) 1999-12-23 2002-02-19 Asm America, Inc. Situ dielectric stacks
US20010051215A1 (en) * 2000-04-13 2001-12-13 Gelest, Inc. Methods for chemical vapor deposition of titanium-silicon-nitrogen films
DE102021002725A1 (de) 2021-05-26 2022-12-01 Semron Gmbh Verfahren zur Herstellung von kapazitiven synaptischen Bauelementen

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2394173A1 (fr) * 1977-06-06 1979-01-05 Thomson Csf Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede
US4113514A (en) * 1978-01-16 1978-09-12 Rca Corporation Method of passivating a semiconductor device by treatment with atomic hydrogen
JPS56155526A (en) * 1980-05-06 1981-12-01 Shunpei Yamazaki Method of forming film
JPS56156760A (en) * 1980-05-06 1981-12-03 Shunpei Yamazaki Method and apparatus for forming coat
JPS5712524A (en) * 1980-06-26 1982-01-22 Fujitsu Ltd Manufacture of semiconductor device
JPS5871660A (ja) * 1981-10-23 1983-04-28 Fujitsu Ltd 薄膜トランジスタの製造方法
JPS58137218A (ja) * 1982-02-09 1983-08-15 Nec Corp シリコン単結晶基板の処理方法
JPS5927576A (ja) * 1982-08-05 1984-02-14 Fujitsu Ltd セルフアライメント形薄膜トランジスタの製造方法
JPS5927575A (ja) * 1982-08-05 1984-02-14 Fujitsu Ltd セルフアライメント形薄膜トランジスタの製造方法
GB2140202A (en) * 1983-05-16 1984-11-21 Philips Electronic Associated Methods of manufacturing semiconductor devices
JPS6016462A (ja) * 1983-07-08 1985-01-28 Seiko Epson Corp 半導体装置の製造方法
JPS61133662A (ja) * 1984-12-03 1986-06-20 Canon Inc アクテイブマトリクス型薄膜トランジスタ基板
JPS6251264A (ja) * 1985-08-30 1987-03-05 Hitachi Ltd 薄膜トランジスタの製造方法
JPS62221163A (ja) * 1986-03-24 1987-09-29 Toppan Printing Co Ltd 薄膜トランジスタの作成方法

Also Published As

Publication number Publication date
EP0294802B1 (de) 1992-12-02
DE3876303T2 (de) 1993-04-01
JPS63306668A (ja) 1988-12-14
EP0294802A1 (de) 1988-12-14
JPH0640550B2 (ja) 1994-05-25
US4859617A (en) 1989-08-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee