DE69231026D1 - Vorrichtung und Verfahren zur Herstellung von Metallfilmen - Google Patents

Vorrichtung und Verfahren zur Herstellung von Metallfilmen

Info

Publication number
DE69231026D1
DE69231026D1 DE69231026T DE69231026T DE69231026D1 DE 69231026 D1 DE69231026 D1 DE 69231026D1 DE 69231026 T DE69231026 T DE 69231026T DE 69231026 T DE69231026 T DE 69231026T DE 69231026 D1 DE69231026 D1 DE 69231026D1
Authority
DE
Germany
Prior art keywords
metal films
producing metal
producing
films
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69231026T
Other languages
English (en)
Other versions
DE69231026T2 (de
Inventor
Yuzo Kataoka
Yukihiro Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69231026D1 publication Critical patent/DE69231026D1/de
Application granted granted Critical
Publication of DE69231026T2 publication Critical patent/DE69231026T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69231026T 1991-10-29 1992-10-28 Vorrichtung und Verfahren zur Herstellung von Metallfilmen Expired - Fee Related DE69231026T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP28297091 1991-10-29
JP4268520A JPH05209279A (ja) 1991-10-29 1992-10-07 金属膜形成装置および金属膜形成法

Publications (2)

Publication Number Publication Date
DE69231026D1 true DE69231026D1 (de) 2000-06-15
DE69231026T2 DE69231026T2 (de) 2000-10-19

Family

ID=26548346

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69231026T Expired - Fee Related DE69231026T2 (de) 1991-10-29 1992-10-28 Vorrichtung und Verfahren zur Herstellung von Metallfilmen

Country Status (4)

Country Link
US (1) US5653810A (de)
EP (1) EP0539948B1 (de)
JP (1) JPH05209279A (de)
DE (1) DE69231026T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7510961B2 (en) 1997-02-14 2009-03-31 Micron Technology, Inc. Utilization of energy absorbing layer to improve metal flow and fill in a novel interconnect structure
DE19808206A1 (de) * 1998-02-27 1999-09-02 Gesche Waferbehandlung
US6194030B1 (en) 1999-03-18 2001-02-27 International Business Machines Corporation Chemical vapor deposition velocity control apparatus
KR100402395B1 (ko) * 2000-12-05 2003-10-22 준 신 이 중공의 음극과 플라즈마를 이용한 태양전지 양산용 실리콘질화막의 제조장치
JP2004288984A (ja) * 2003-03-24 2004-10-14 Sharp Corp 成膜装置及び成膜方法
JP4185483B2 (ja) * 2004-10-22 2008-11-26 シャープ株式会社 プラズマ処理装置
JP4584722B2 (ja) * 2005-01-13 2010-11-24 シャープ株式会社 プラズマ処理装置および同装置により製造された半導体素子
JP2006196681A (ja) * 2005-01-13 2006-07-27 Sharp Corp プラズマ処理装置および同装置により製造された半導体素子
US8211235B2 (en) * 2005-03-04 2012-07-03 Picosun Oy Apparatuses and methods for deposition of material on surfaces
DE102005031602A1 (de) * 2005-07-06 2007-01-11 Robert Bosch Gmbh Reaktor zur Durchführung eines Ätzverfahrens für einen Stapel von maskierten Wafern und Ätzverfahren
US7900579B2 (en) 2007-09-26 2011-03-08 Tokyo Electron Limited Heat treatment method wherein the substrate holder is composed of two holder constituting bodies that move relative to each other
US8372238B2 (en) * 2008-05-20 2013-02-12 Nordson Corporation Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
BRPI0803774B1 (pt) * 2008-06-11 2018-09-11 Univ Federal De Santa Catarina Ufsc processo e reator de plasma para tratamento de peças metálicas
KR101650795B1 (ko) * 2011-09-26 2016-08-24 시마쯔 코포레이션 플라즈마 성막 장치
JP2014125651A (ja) * 2012-12-26 2014-07-07 Kobe Steel Ltd インライン式プラズマｃｖｄ装置
DE102015111144A1 (de) * 2015-07-09 2017-01-12 Hanwha Q.CELLS GmbH Vorrichtung zur paarweisen Aufnahme von Substraten
FR3089522B1 (fr) * 2018-12-07 2020-12-25 Semco Tech Sas Dispositif de traitement assiste par plasma

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5843508A (ja) * 1981-09-09 1983-03-14 Fuji Electric Corp Res & Dev Ltd 量産型成膜装置
NL8303602A (nl) * 1983-10-19 1985-05-17 Johannes Hendrikus Leonardus H Plasma-gestimuleerde chemische opdampinrichting en in het bijzonder een substratenondersteunings- en elektrodeopstelling daarvoor en de betreffende onderdelen.
JPH0644554B2 (ja) * 1984-03-28 1994-06-08 株式会社富士電機総合研究所 プラズマｃｖｄ装置
US4610748A (en) * 1984-12-10 1986-09-09 Advanced Semiconductor Materials Of America, Inc. Apparatus for processing semiconductor wafers or the like
JPS61191015A (ja) * 1985-02-20 1986-08-25 Hitachi Ltd 半導体の気相成長方法及びその装置
US5160545A (en) * 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
US5040046A (en) * 1990-10-09 1991-08-13 Micron Technology, Inc. Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced thereby

Also Published As

Publication number Publication date
EP0539948B1 (de) 2000-05-10
EP0539948A3 (en) 1996-01-31
JPH05209279A (ja) 1993-08-20
US5653810A (en) 1997-08-05
DE69231026T2 (de) 2000-10-19
EP0539948A2 (de) 1993-05-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee