KR950700436A - 제어 화학량론적 무기 산화물 박막의 제조 방법(Process for producing Thin Films of Inorganic Oxides of Controlled Stoichiometry) - Google Patents

제어 화학량론적 무기 산화물 박막의 제조 방법(Process for producing Thin Films of Inorganic Oxides of Controlled Stoichiometry)

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KR950700436A
KR950700436A KR1019940703183A KR19940703183A KR950700436A KR 950700436 A KR950700436 A KR 950700436A KR 1019940703183 A KR1019940703183 A KR 1019940703183A KR 19940703183 A KR19940703183 A KR 19940703183A KR 950700436 A KR950700436 A KR 950700436A
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oxides
source
oxide
volatile
thin film
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KR1019940703183A
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KR100276539B1 (ko
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딘 윌렛 페이스
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미리암 디. 메코너헤이
이. 아이. 듀폰 디 네모아 앤드 캄파니
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0381—Processes for depositing or forming superconductor layers by evaporation independent of heat source, e.g. MBE
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/731—Sputter coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/732—Evaporative coating with superconducting material

Abstract

본 발명은 휘발성 및 상대적 비휘발성 산화물을 함유하는 박막, 특히, 초전도체 또는 전구체의 산화물의 결정성 박막을 제조하기 위한 직접 합성법에 관한 것이다. 본 발명의 방법에서는 박막 증착시 휘발성 및 상대적 비휘발성 산화물의 별개의 공급원을 사용한다.

Description

제어 화학량론적 무기 산화물 박막의 제조 방법(Process for producing Thin Films of Inorganic Oxides of Controlled Stoichiometry)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명에 의해 제조한 "순수 상" TlBa2CaCu2O7막의 선형(제1a도) 및 로그(제1b도) 눈금상의 X-선 회절 패턴을 나타내다. 제 2 도는 본 발명에 의해 제조된 TlBaCaCu2O7막에 대한 저항률 대 온도의 플롯을 나타낸다. 제 3 도는 본 발명에 의해 제조된 초전도 박막의 X-선 회절 패턴을 나타낸다.

Claims (10)

  1. 휘발성 산화물의 제 1 공급원을 제공하고, 상대적 비휘발성 산화물의 제 2 공급원을 제공하고, 기판상에 상기 제 2 공급원으로부터의 상기 비휘발성 산화물을 증착시키고, 동시에 상기 기판상에 상기 제 1 공급원으로부터의 충분량의 상기 휘발성 산화물을 증착시켜, 특정 화학량론적 결정성 박막을 제공하는 것으로 이루어지는, 증착 중 상기 박막으로부터 증발 손실에 민감한 휘발성 산화물 및 상대적 비휘발성 산화물 둘 다를 포함하는 물질로부터 결정성 박막을 직접 합성법으로 제조하는 방법.
  2. 제 1 항에 있어서, 상기 휘발성 산화물이 상대적 비휘발성 산화물의 증착 속도에, 결정성 박막 중의 상대적 비휘발성 산화물에 대한 휘발성 산화물의 화학량론적 비를 곱한 값의 2배 이상의 속도로 증착되는 방법.
  3. 제 2 항에 있어서, 상기 물질이 TlBa2CaCu2O7, TlBa2Ca2Cu3O9, Tl2Ba2CaCu2O8, Tl2Ba2Ca2Cu3O10,및 TlBa2(Ca1-XYX)Cu2O7(여기서, x는 0 내지 0.6임)으로 이루어지는 군에서 선택되고, 상기 휘발성 산화물의 공급원이 Tl2O이고, 상기 상대적 비휘발성 산화물의 공급원이 Ba, Ca 및 Cu의 산화물로 이루어지는 방법.
  4. 제 3 항에 있어서, 상기 기판이 400 내지 700℃로 가열되는 방법.
  5. 제 4 항에 있어서, 상기 증착이 산소 또는 N2O와 비활성 기체와의 혼합물 분위기에서 수행되는 방법.
  6. 제 5 항에 있어서, 상기 분위기 중의 상기 산소 또는 N2O의 부분압이 증착중 상기 막으로부터의 T1산화물의 증발 손실을 감소하기에 충분한 것인 방법.
  7. 제 3 항에 있어서, 상기 Tl2O가 1시간 당 10 내지 360nm의 속도로 증착되는 방법.
  8. 제 6 항에 있어서, 상기 부분압이 3 내지 133 Pa인 방법.
  9. 제 2 항에 있어서, 상기 물질이 Tl0.5Pb0.5Sr2Can-1CunO2n+3(여기서, n은 1,2 또는 3임)으로 이루어지는 군에서 선택되고, 상기 휘발성 산화물의 공급원이 Tl2O 및 PbO이고, 상기 상대적 비휘발성 산화물의 공급원이 Sr, Ca 및 Cu의 산화물로 이루어지는 방법.
  10. 제 2 항에 있어서, 상기 물질이 TlBa2(Ca1-XYX)Cu2O7(여기서, x는 0 내지 0.6임)로 이루어지는 군에서 선택되고, 휘발성 산화물의 상기 공급원이 Tl2O이고, 상당대적 비휘발성 산화물의 상기 공급원이 Ba, Ca, Y 및 Cu의 산화물로 이루어지는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940703183A 1992-03-13 1993-03-10 제어 화학량론적 무기 산화물 박막의 제조방법 KR100276539B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US85062192A 1992-03-13 1992-03-13
US07/850,621 1992-03-13
US07/850621 1992-03-13
US98413492A 1992-12-09 1992-12-09
US07/984134 1992-12-09
US07/984,134 1992-12-09
PCT/US1993/002162 WO1993018200A1 (en) 1992-03-13 1993-03-10 Process for producing thin films of inorganic oxides of controlled stoichiometry

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KR950700436A true KR950700436A (ko) 1995-01-16
KR100276539B1 KR100276539B1 (ko) 2000-12-15

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US (1) US5389606A (ko)
EP (1) EP0630422B1 (ko)
JP (1) JP3451352B2 (ko)
KR (1) KR100276539B1 (ko)
AT (1) ATE137811T1 (ko)
CA (1) CA2131791A1 (ko)
DE (1) DE69302572T2 (ko)
DK (1) DK0630422T3 (ko)
ES (1) ES2087740T3 (ko)
GR (1) GR3020559T3 (ko)
HK (1) HK180596A (ko)
SG (1) SG76474A1 (ko)
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US5892243A (en) * 1996-12-06 1999-04-06 Trw Inc. High-temperature SSNS and SNS Josephson junction and method of making junction
JP3385889B2 (ja) * 1996-12-25 2003-03-10 株式会社日立製作所 強誘電体メモリ素子及びその製造方法
US6120857A (en) * 1998-05-18 2000-09-19 The Regents Of The University Of California Low work function surface layers produced by laser ablation using short-wavelength photons
US6129898A (en) * 1998-08-17 2000-10-10 Ford Global Technologies, Inc. NOx trap catalyst for lean burn engines
US7439208B2 (en) 2003-12-01 2008-10-21 Superconductor Technologies, Inc. Growth of in-situ thin films by reactive evaporation
US20100279124A1 (en) * 2008-10-31 2010-11-04 Leybold Optics Gmbh Hafnium or zirconium oxide Coating

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JPH075435B2 (ja) * 1987-03-31 1995-01-25 住友電気工業株式会社 超電導薄膜の製造方法及び装置
DE3726016A1 (de) * 1987-08-05 1989-02-16 Siemens Ag Verfahren zur herstellung eines schichtartigen aufbaus aus einem oxidkeramischen supralteitermaterial
DE3734069A1 (de) * 1987-10-08 1989-04-20 Siemens Ag Verfahren zur abscheidung von schichten aus einem oxidkeramischen supraleitermaterial auf einem substrat
DE3827069A1 (de) * 1987-11-21 1989-06-08 Asea Brown Boveri Verfahren zur herstellung eines supraleiters
DE3822502C1 (ko) * 1988-07-03 1989-08-24 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
KR950011339B1 (ko) * 1989-02-10 1995-09-30 미쓰비시 긴소꾸 가부시기가이샤 초전도 세라믹스막 형성용 타아겟재
DE4006489A1 (de) * 1990-03-02 1991-09-05 Hoechst Ag Vorrichtung zum herstellen duenner schichten aus metallmischoxiden aus organischen metallverbindungen auf einem substrat

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EP0630422B1 (en) 1996-05-08
ATE137811T1 (de) 1996-05-15
US5389606A (en) 1995-02-14
SG76474A1 (en) 2000-11-21
DK0630422T3 (da) 1996-06-10
JPH07505114A (ja) 1995-06-08
ES2087740T3 (es) 1996-07-16
KR100276539B1 (ko) 2000-12-15
DE69302572D1 (de) 1996-06-13
EP0630422A1 (en) 1994-12-28
CA2131791A1 (en) 1993-09-16
HK180596A (en) 1996-10-04
DE69302572T2 (de) 1996-12-05
JP3451352B2 (ja) 2003-09-29
GR3020559T3 (en) 1996-10-31
WO1993018200A1 (en) 1993-09-16

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