KR950700436A - 제어 화학량론적 무기 산화물 박막의 제조 방법(Process for producing Thin Films of Inorganic Oxides of Controlled Stoichiometry) - Google Patents
제어 화학량론적 무기 산화물 박막의 제조 방법(Process for producing Thin Films of Inorganic Oxides of Controlled Stoichiometry)Info
- Publication number
- KR950700436A KR950700436A KR1019940703183A KR19940703183A KR950700436A KR 950700436 A KR950700436 A KR 950700436A KR 1019940703183 A KR1019940703183 A KR 1019940703183A KR 19940703183 A KR19940703183 A KR 19940703183A KR 950700436 A KR950700436 A KR 950700436A
- Authority
- KR
- South Korea
- Prior art keywords
- oxides
- source
- oxide
- volatile
- thin film
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 title claims 10
- 229910052809 inorganic oxide Inorganic materials 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract 5
- 229910004247 CaCu Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 6
- 230000008021 deposition Effects 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 230000008020 evaporation Effects 0.000 claims 2
- 238000001704 evaporation Methods 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 238000003786 synthesis reaction Methods 0.000 claims 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000011065 in-situ storage Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000002887 superconductor Substances 0.000 abstract 1
- 238000002441 X-ray diffraction Methods 0.000 description 2
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0381—Processes for depositing or forming copper oxide superconductor layers by evaporation, e.g. MBE
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/731—Sputter coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/732—Evaporative coating with superconducting material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Glass Compositions (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
본 발명은 휘발성 및 상대적 비휘발성 산화물을 함유하는 박막, 특히, 초전도체 또는 전구체의 산화물의 결정성 박막을 제조하기 위한 직접 합성법에 관한 것이다. 본 발명의 방법에서는 박막 증착시 휘발성 및 상대적 비휘발성 산화물의 별개의 공급원을 사용한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명에 의해 제조한 "순수 상" TlBa2CaCu2O7막의 선형(제1a도) 및 로그(제1b도) 눈금상의 X-선 회절 패턴을 나타내다. 제 2 도는 본 발명에 의해 제조된 TlBaCaCu2O7막에 대한 저항률 대 온도의 플롯을 나타낸다. 제 3 도는 본 발명에 의해 제조된 초전도 박막의 X-선 회절 패턴을 나타낸다.
Claims (10)
- 휘발성 산화물의 제 1 공급원을 제공하고, 상대적 비휘발성 산화물의 제 2 공급원을 제공하고, 기판상에 상기 제 2 공급원으로부터의 상기 비휘발성 산화물을 증착시키고, 동시에 상기 기판상에 상기 제 1 공급원으로부터의 충분량의 상기 휘발성 산화물을 증착시켜, 특정 화학량론적 결정성 박막을 제공하는 것으로 이루어지는, 증착 중 상기 박막으로부터 증발 손실에 민감한 휘발성 산화물 및 상대적 비휘발성 산화물 둘 다를 포함하는 물질로부터 결정성 박막을 직접 합성법으로 제조하는 방법.
- 제 1 항에 있어서, 상기 휘발성 산화물이 상대적 비휘발성 산화물의 증착 속도에, 결정성 박막 중의 상대적 비휘발성 산화물에 대한 휘발성 산화물의 화학량론적 비를 곱한 값의 2배 이상의 속도로 증착되는 방법.
- 제 2 항에 있어서, 상기 물질이 TlBa2CaCu2O7, TlBa2Ca2Cu3O9, Tl2Ba2CaCu2O8, Tl2Ba2Ca2Cu3O10,및 TlBa2(Ca1-XYX)Cu2O7(여기서, x는 0 내지 0.6임)으로 이루어지는 군에서 선택되고, 상기 휘발성 산화물의 공급원이 Tl2O이고, 상기 상대적 비휘발성 산화물의 공급원이 Ba, Ca 및 Cu의 산화물로 이루어지는 방법.
- 제 3 항에 있어서, 상기 기판이 400 내지 700℃로 가열되는 방법.
- 제 4 항에 있어서, 상기 증착이 산소 또는 N2O와 비활성 기체와의 혼합물 분위기에서 수행되는 방법.
- 제 5 항에 있어서, 상기 분위기 중의 상기 산소 또는 N2O의 부분압이 증착중 상기 막으로부터의 T1산화물의 증발 손실을 감소하기에 충분한 것인 방법.
- 제 3 항에 있어서, 상기 Tl2O가 1시간 당 10 내지 360nm의 속도로 증착되는 방법.
- 제 6 항에 있어서, 상기 부분압이 3 내지 133 Pa인 방법.
- 제 2 항에 있어서, 상기 물질이 Tl0.5Pb0.5Sr2Can-1CunO2n+3(여기서, n은 1,2 또는 3임)으로 이루어지는 군에서 선택되고, 상기 휘발성 산화물의 공급원이 Tl2O 및 PbO이고, 상기 상대적 비휘발성 산화물의 공급원이 Sr, Ca 및 Cu의 산화물로 이루어지는 방법.
- 제 2 항에 있어서, 상기 물질이 TlBa2(Ca1-XYX)Cu2O7(여기서, x는 0 내지 0.6임)로 이루어지는 군에서 선택되고, 휘발성 산화물의 상기 공급원이 Tl2O이고, 상당대적 비휘발성 산화물의 상기 공급원이 Ba, Ca, Y 및 Cu의 산화물로 이루어지는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85062192A | 1992-03-13 | 1992-03-13 | |
US07/850,621 | 1992-03-13 | ||
US07/850621 | 1992-03-13 | ||
US98413492A | 1992-12-09 | 1992-12-09 | |
US07/984134 | 1992-12-09 | ||
US07/984,134 | 1992-12-09 | ||
PCT/US1993/002162 WO1993018200A1 (en) | 1992-03-13 | 1993-03-10 | Process for producing thin films of inorganic oxides of controlled stoichiometry |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950700436A true KR950700436A (ko) | 1995-01-16 |
KR100276539B1 KR100276539B1 (ko) | 2000-12-15 |
Family
ID=27126941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940703183A KR100276539B1 (ko) | 1992-03-13 | 1993-03-10 | 제어 화학량론적 무기 산화물 박막의 제조방법 |
Country Status (13)
Country | Link |
---|---|
US (1) | US5389606A (ko) |
EP (1) | EP0630422B1 (ko) |
JP (1) | JP3451352B2 (ko) |
KR (1) | KR100276539B1 (ko) |
AT (1) | ATE137811T1 (ko) |
CA (1) | CA2131791A1 (ko) |
DE (1) | DE69302572T2 (ko) |
DK (1) | DK0630422T3 (ko) |
ES (1) | ES2087740T3 (ko) |
GR (1) | GR3020559T3 (ko) |
HK (1) | HK180596A (ko) |
SG (1) | SG76474A1 (ko) |
WO (1) | WO1993018200A1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5892243A (en) * | 1996-12-06 | 1999-04-06 | Trw Inc. | High-temperature SSNS and SNS Josephson junction and method of making junction |
JP3385889B2 (ja) * | 1996-12-25 | 2003-03-10 | 株式会社日立製作所 | 強誘電体メモリ素子及びその製造方法 |
US6120857A (en) * | 1998-05-18 | 2000-09-19 | The Regents Of The University Of California | Low work function surface layers produced by laser ablation using short-wavelength photons |
US6129898A (en) * | 1998-08-17 | 2000-10-10 | Ford Global Technologies, Inc. | NOx trap catalyst for lean burn engines |
US7439208B2 (en) | 2003-12-01 | 2008-10-21 | Superconductor Technologies, Inc. | Growth of in-situ thin films by reactive evaporation |
US20100279124A1 (en) * | 2008-10-31 | 2010-11-04 | Leybold Optics Gmbh | Hafnium or zirconium oxide Coating |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH075435B2 (ja) * | 1987-03-31 | 1995-01-25 | 住友電気工業株式会社 | 超電導薄膜の製造方法及び装置 |
DE3726016A1 (de) * | 1987-08-05 | 1989-02-16 | Siemens Ag | Verfahren zur herstellung eines schichtartigen aufbaus aus einem oxidkeramischen supralteitermaterial |
DE3734069A1 (de) * | 1987-10-08 | 1989-04-20 | Siemens Ag | Verfahren zur abscheidung von schichten aus einem oxidkeramischen supraleitermaterial auf einem substrat |
DE3827069A1 (de) * | 1987-11-21 | 1989-06-08 | Asea Brown Boveri | Verfahren zur herstellung eines supraleiters |
DE3822502C1 (ko) * | 1988-07-03 | 1989-08-24 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
KR950011339B1 (ko) * | 1989-02-10 | 1995-09-30 | 미쓰비시 긴소꾸 가부시기가이샤 | 초전도 세라믹스막 형성용 타아겟재 |
DE4006489A1 (de) * | 1990-03-02 | 1991-09-05 | Hoechst Ag | Vorrichtung zum herstellen duenner schichten aus metallmischoxiden aus organischen metallverbindungen auf einem substrat |
-
1993
- 1993-03-10 WO PCT/US1993/002162 patent/WO1993018200A1/en active IP Right Grant
- 1993-03-10 EP EP93912066A patent/EP0630422B1/en not_active Expired - Lifetime
- 1993-03-10 ES ES93912066T patent/ES2087740T3/es not_active Expired - Lifetime
- 1993-03-10 SG SG1996008311A patent/SG76474A1/en unknown
- 1993-03-10 DE DE69302572T patent/DE69302572T2/de not_active Expired - Fee Related
- 1993-03-10 JP JP51598293A patent/JP3451352B2/ja not_active Expired - Fee Related
- 1993-03-10 CA CA002131791A patent/CA2131791A1/en not_active Abandoned
- 1993-03-10 KR KR1019940703183A patent/KR100276539B1/ko not_active IP Right Cessation
- 1993-03-10 DK DK93912066.3T patent/DK0630422T3/da active
- 1993-03-10 AT AT93912066T patent/ATE137811T1/de not_active IP Right Cessation
- 1993-11-12 US US08/151,236 patent/US5389606A/en not_active Expired - Fee Related
-
1996
- 1996-07-17 GR GR960401928T patent/GR3020559T3/el unknown
- 1996-09-26 HK HK180596A patent/HK180596A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DK0630422T3 (da) | 1996-06-10 |
GR3020559T3 (en) | 1996-10-31 |
JP3451352B2 (ja) | 2003-09-29 |
CA2131791A1 (en) | 1993-09-16 |
JPH07505114A (ja) | 1995-06-08 |
ES2087740T3 (es) | 1996-07-16 |
EP0630422A1 (en) | 1994-12-28 |
KR100276539B1 (ko) | 2000-12-15 |
WO1993018200A1 (en) | 1993-09-16 |
DE69302572D1 (de) | 1996-06-13 |
ATE137811T1 (de) | 1996-05-15 |
HK180596A (en) | 1996-10-04 |
US5389606A (en) | 1995-02-14 |
SG76474A1 (en) | 2000-11-21 |
EP0630422B1 (en) | 1996-05-08 |
DE69302572T2 (de) | 1996-12-05 |
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