KR970013370A - 비스무트 화합물의 제조 방법 및 비스무트 화합물의 유전체 물질 - Google Patents
비스무트 화합물의 제조 방법 및 비스무트 화합물의 유전체 물질 Download PDFInfo
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- KR970013370A KR970013370A KR1019960034698A KR19960034698A KR970013370A KR 970013370 A KR970013370 A KR 970013370A KR 1019960034698 A KR1019960034698 A KR 1019960034698A KR 19960034698 A KR19960034698 A KR 19960034698A KR 970013370 A KR970013370 A KR 970013370A
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- Prior art keywords
- bismuth
- compound
- bismuth compound
- producing
- precursor
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- 238000004519 manufacturing process Methods 0.000 title claims abstract 8
- 150000001875 compounds Chemical class 0.000 title claims description 8
- 239000003989 dielectric material Substances 0.000 title claims 2
- -1 BISMUT COMPOUND Chemical class 0.000 title 1
- 150000001622 bismuth compounds Chemical class 0.000 claims abstract description 19
- 239000002243 precursor Substances 0.000 claims abstract 7
- 230000001590 oxidative effect Effects 0.000 claims abstract 4
- 239000002994 raw material Substances 0.000 claims abstract 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical group [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 229910000416 bismuth oxide Inorganic materials 0.000 claims 1
- 239000006227 byproduct Substances 0.000 claims 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
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- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G33/00—Compounds of niobium
- C01G33/006—Compounds containing, besides niobium, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G35/00—Compounds of tantalum
- C01G35/006—Compounds containing, besides tantalum, two or more other elements, with the exception of oxygen or hydrogen
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
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- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- C01P2002/20—Two-dimensional structures
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- C01—INORGANIC CHEMISTRY
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- C01P2002/00—Crystal-structural characteristics
- C01P2002/30—Three-dimensional structures
- C01P2002/36—Three-dimensional structures pyrochlore-type (A2B2O7)
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
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- C01—INORGANIC CHEMISTRY
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- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
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- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Structural Engineering (AREA)
- Metallurgy (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Chemical Vapour Deposition (AREA)
- Semiconductor Memories (AREA)
- Inorganic Insulating Materials (AREA)
- Physical Vapour Deposition (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
본 발명의 목적은 비스무트 화합물에 의한 유전체에 있어서, 도전성의 부생성상의 생성을 억제하는 것이다.
이를 해결하기 위한 수단으로서 본 발명에서는 압력 0.01 내지 50torr의 분위기 중에서 원료가스를 도입하고, 비스무트 화합물의 전구 물질을 기체상에 퇴적한 후, 산화성 분위기 중에서 열처리를 실시하는 비스무트 화합물의 제조 방법을 제공한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 산소 분압이 20 내지 70% 범위에서, 산소 분압과 박막의 조성과의 관계를 나타내는 도면.
제2도는 산소 분압을 38.9%로 했을시 얻어진 박막의 X선 회절 패턴도.
제3도는 산소 분압을 22.2%로 했을시 얻어진 박막의 X선 회절 패턴도.
제4도는 비스무트 층상 화합물과 파이로클로아 구조의 부새성물과의 상분율의 산소분압의 의존성을 나타내는 도면.
제5도는 성막시의 산소 분압과 잔류 분극 및 쇼트율과의 관계를 나타내는 도면.
Claims (13)
- 압력 0.01 내지 50 torr 분위기 중에서 원료 가스를 도입하고, 비스무트 화합물의 전구 물질을 기체(基體)상에 퇴적하는 제1 공정과, 상기 전구 물질을 산화성 분위기 중에서 열처리하는 제2 공정을 포함하는 것을 특징으로 하는 비스무트 화합물의 제조 방법.
- 제1항에 있어서, 상기 제2 공정후에 얻어지는 비스무트 화합물이 비스무트 층상 화합물과 파이로클로아 구조의 복합 산화물을 함유하는 것을 특징으로 하는 비스무트 화합물의 제조 방법.
- 제2항에 있어서, 상기 비스무트 층상 화합물이 Bi2(SraBabCac)(TadBbe)209의 조성식으로 표시되고, a,b,c,d,e는 원자비로 0 내지 1의 값을 취하며, a+b+c=1, d+e=인 것을 특징으로 하는 비스무트 화합물의 제조 방법.
- 제2항에 있어서, 상기 파이로클로아 구조의 복합 산화물이 (Bi, (Sr, Ba, Ca))2-x(Ta, Nb)207의 조성식으로 표시되는 것을 특징으로 하는 비스무트 화합물의 제조 방법.
- 제1항에 있어서, 상기 제1 공정에서의 산소 분압이 전압의 20 내지 50%임을 특징으로 하는 비스무트 화합물의 제조 방법.
- 제1항에 있어서, 상기 제1 공정에서의 기체 온도가 400 내지 750℃임을 특징으로 하는 비스무트 화합물의 제조 방법.
- 제1항에 있어서, 상기 비스무트 화합물의 전구 물질이 플루오라이트 구조의 결정체로 이루어지는 상과 아모르포스상을 함유하는 것을 특징으로 하는 비스무트 화합물의 제조 방법.
- 제1항에 있어서, 상기 제2 공정은 산화성 분위기 중에서 상기 제1 공정에서의 상기 비스무트 화합물의 전구 물질의 성막 온도 이상 850℃이하의 온도 범위에서 실시되는 것을 특징으로 하는 비스무트 화합물의 제조 방법.
- 플루오라이트 구조의 결정체로 이루어지는 상과 아모르포스상을 함유하는 비스무트 화합물의 전구 물질을 기체상에 퇴적하는 공정과, 상기 전구 물질을 산화성 분위기 중에서 열처리하는 공정을 포함하며, 비스무트 층상 화합물과 파이로클로아 구조의 복합 산화물을 함유하는 비스무트 산화물을 형성하는 것을 특징으로 하는 비스무트 화합물의 제조 방법.
- 주상의 비스무트 층상 화합물과 부생성상의 파이로클로아 구조의 복합 산화물을 함유하는 비스무트 화합물의 유전체 물질.
- 제10항에 있어서, 상기 비스무트 층상 화합물이 Bi2(SraBabCac)(TadNbd)209의 조성식으로 표시되고, a, b, c, d, e는 원자비로, 0 내지 1의 값을 취하며, a+b+c=1, d+e=인 것을 특징으로 하는 비스무트 화합물의 유전체 물질.
- 제10항에 있어서, 상기 파이로클로아 구조의 복합 산화물일 (Bi, (Sr, Ba, Ca))2-x(Ta, Nb)207의 조성식으로 표시되는 것을 특징으로 하는 비스무트 화합물의 유전체 물질.
- 제10항에 있어서, 상기 비스무트 층상 화합물이 Bi2SrTa209의 조성식으로 표시되고, 상기 파이로클로아 구조의 복합 산화물이 (Bi, Sr)2-xTa207의 조성식으로 표시되는 것을 특징으로 하는 비스무트 화합물의 유전체 물질.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP95-213694 | 1995-08-22 | ||
JP21369495A JP3500787B2 (ja) | 1995-08-22 | 1995-08-22 | ビスマス化合物の製造方法とビスマス化合物の誘電体物質 |
JP95213694 | 1995-08-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970013370A true KR970013370A (ko) | 1997-03-29 |
KR100445625B1 KR100445625B1 (ko) | 2004-11-16 |
Family
ID=16643449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960034698A KR100445625B1 (ko) | 1995-08-22 | 1996-08-21 | 비스무트화합물의제조방법및비스무트화합물의유전체물질 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5976624A (ko) |
EP (1) | EP0760400B1 (ko) |
JP (1) | JP3500787B2 (ko) |
KR (1) | KR100445625B1 (ko) |
DE (1) | DE69606123T2 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100378070B1 (ko) * | 1995-03-30 | 2003-08-21 | 소니 가부시끼 가이샤 | 비스무트층상 화합물의 제조방법 |
DE19743269A1 (de) * | 1997-09-30 | 1999-04-01 | Siemens Ag | Herstellverfahren für eine Bi-haltige keramische Schicht |
WO2000034550A2 (en) * | 1998-12-09 | 2000-06-15 | Infineon Technologies Ag | Cvd processes using bi aryl |
US6680269B2 (en) | 2000-06-29 | 2004-01-20 | The Penn State Research Foundation | Bismuth pyrochlore microwave dielectric materials |
JP5233778B2 (ja) * | 2009-03-24 | 2013-07-10 | 株式会社デンソー | 異方形状粉末及び結晶配向セラミックスの製造方法 |
JP6353644B2 (ja) * | 2013-09-27 | 2018-07-04 | 国立大学法人北陸先端科学技術大学院大学 | 酸化物誘電体及びその製造方法、酸化物誘電体の前駆体、並びに固体電子装置及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57158369A (en) * | 1981-03-26 | 1982-09-30 | Semiconductor Energy Lab Co Ltd | Formation of dielectric film by plasma vapor phase method |
CA2037481C (en) * | 1990-03-08 | 1998-11-10 | Noriki Hayashi | Method of preparing oxide superconducting film |
US5423285A (en) * | 1991-02-25 | 1995-06-13 | Olympus Optical Co., Ltd. | Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications |
JPH05147933A (ja) * | 1991-11-29 | 1993-06-15 | Ube Ind Ltd | アモルフアス強誘電体酸化物材料及びその製造方法 |
US5426075A (en) * | 1994-06-15 | 1995-06-20 | Ramtron International Corporation | Method of manufacturing ferroelectric bismuth layered oxides |
US5527567A (en) * | 1994-09-02 | 1996-06-18 | Ceram Incorporated | Metalorganic chemical vapor deposition of layered structure oxides |
JP3116768B2 (ja) * | 1995-04-06 | 2000-12-11 | ソニー株式会社 | ビスマス層状化合物の製法 |
-
1995
- 1995-08-22 JP JP21369495A patent/JP3500787B2/ja not_active Expired - Fee Related
-
1996
- 1996-08-20 DE DE69606123T patent/DE69606123T2/de not_active Expired - Fee Related
- 1996-08-20 US US08/700,030 patent/US5976624A/en not_active Expired - Fee Related
- 1996-08-20 EP EP96113346A patent/EP0760400B1/en not_active Expired - Lifetime
- 1996-08-21 KR KR1019960034698A patent/KR100445625B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100445625B1 (ko) | 2004-11-16 |
JP3500787B2 (ja) | 2004-02-23 |
EP0760400A3 (en) | 1997-04-02 |
DE69606123T2 (de) | 2000-08-24 |
JPH0959021A (ja) | 1997-03-04 |
DE69606123D1 (de) | 2000-02-17 |
EP0760400B1 (en) | 2000-01-12 |
EP0760400A2 (en) | 1997-03-05 |
US5976624A (en) | 1999-11-02 |
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