JPS57158369A - Formation of dielectric film by plasma vapor phase method - Google Patents

Formation of dielectric film by plasma vapor phase method

Info

Publication number
JPS57158369A
JPS57158369A JP4435081A JP4435081A JPS57158369A JP S57158369 A JPS57158369 A JP S57158369A JP 4435081 A JP4435081 A JP 4435081A JP 4435081 A JP4435081 A JP 4435081A JP S57158369 A JPS57158369 A JP S57158369A
Authority
JP
Japan
Prior art keywords
furnace
heating
thin films
vapor phase
dielectric film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4435081A
Other languages
Japanese (ja)
Other versions
JPH0319299B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP4435081A priority Critical patent/JPS57158369A/en
Publication of JPS57158369A publication Critical patent/JPS57158369A/en
Publication of JPH0319299B2 publication Critical patent/JPH0319299B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Abstract

PURPOSE:To stably form a thin dielectric film free from defects such as pinholes on each substrate by a plasma vapor phase method by activating a reactive gas for forming the film and a carrier gas by applying induced energy. CONSTITUTION:A plurality of substrates 1 for depositing thin films are arranged on a quartz boat 2 in a reaction furnace 3, and 1 kind of metal selected from Ba, Pb, Sr, Ca, Mg, Zr, Nb, Li, Ta, Ti, Sn, Sb, Bi and W, org. or inorg. metallic salt or metallic oxide of said metal as starting material 4 for thin films is put in a boat 5 and vaporized by heating to <=800 deg.C with an electric furnace 10. A carrier gas 14 such as H2, He or Ne is introduced into the furnace 3. By applying high frequency energy to the furnace 3 through electrodes 6, 7, the whole furnace is set in a plasma discharge state, and the vaporized starting substance is activated in the activating section 26 by heating with a heating furnace 11 to form very thin films of the starting substance free from pinholes on the surfaces of the substrates 1.
JP4435081A 1981-03-26 1981-03-26 Formation of dielectric film by plasma vapor phase method Granted JPS57158369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4435081A JPS57158369A (en) 1981-03-26 1981-03-26 Formation of dielectric film by plasma vapor phase method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4435081A JPS57158369A (en) 1981-03-26 1981-03-26 Formation of dielectric film by plasma vapor phase method

Publications (2)

Publication Number Publication Date
JPS57158369A true JPS57158369A (en) 1982-09-30
JPH0319299B2 JPH0319299B2 (en) 1991-03-14

Family

ID=12689060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4435081A Granted JPS57158369A (en) 1981-03-26 1981-03-26 Formation of dielectric film by plasma vapor phase method

Country Status (1)

Country Link
JP (1) JPS57158369A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0257686A (en) * 1988-08-22 1990-02-27 Matsushita Electric Ind Co Ltd Manufacture of thin lead-titanate film
EP0760400A3 (en) * 1995-08-22 1997-04-02 Sony Corporation Process for producing bismuth compounds, and bismuth compounds
CN104651805A (en) * 2015-02-04 2015-05-27 昆明理工大学 Ultrasonic atomizing microwave tube furnace and application thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128600A (en) * 1974-09-05 1976-03-10 Kitasato Gakuen KAYOSEIPURUSHIAN BURUUNOSEIZOHOHO
JPS5176596A (en) * 1974-11-22 1976-07-02 Euratom Hakumakuso no taisekihoho oyobi sochi
JPS5589469A (en) * 1978-09-11 1980-07-07 Honeywell Inc Adhering of optically transparent conductive metal oxide membrane to substrate plate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128600A (en) * 1974-09-05 1976-03-10 Kitasato Gakuen KAYOSEIPURUSHIAN BURUUNOSEIZOHOHO
JPS5176596A (en) * 1974-11-22 1976-07-02 Euratom Hakumakuso no taisekihoho oyobi sochi
JPS5589469A (en) * 1978-09-11 1980-07-07 Honeywell Inc Adhering of optically transparent conductive metal oxide membrane to substrate plate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0257686A (en) * 1988-08-22 1990-02-27 Matsushita Electric Ind Co Ltd Manufacture of thin lead-titanate film
EP0760400A3 (en) * 1995-08-22 1997-04-02 Sony Corporation Process for producing bismuth compounds, and bismuth compounds
US5976624A (en) * 1995-08-22 1999-11-02 Sony Corporation Process for producing bismuth compounds, and bismuth compounds
CN104651805A (en) * 2015-02-04 2015-05-27 昆明理工大学 Ultrasonic atomizing microwave tube furnace and application thereof

Also Published As

Publication number Publication date
JPH0319299B2 (en) 1991-03-14

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