JPS58164777A - Formation of metallic compound film - Google Patents
Formation of metallic compound filmInfo
- Publication number
- JPS58164777A JPS58164777A JP4571082A JP4571082A JPS58164777A JP S58164777 A JPS58164777 A JP S58164777A JP 4571082 A JP4571082 A JP 4571082A JP 4571082 A JP4571082 A JP 4571082A JP S58164777 A JPS58164777 A JP S58164777A
- Authority
- JP
- Japan
- Prior art keywords
- substrates
- vessel
- plates
- substrate
- metal compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の技術分野1
本発明は、均−美履な被膜を大量の基体上に形成できる
金属化合物被膜の形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention 1] The present invention relates to a method for forming a metal compound film that can form a uniform and beautiful film on a large amount of substrates.
[発明の技術的背景とその問題点]
従来より、金属、セラミックス等からなる基体表面に、
耐摩耗性に□、すぐれる、たとえば窒化チタン、炭化チ
タン等の高融点化合物の被膜を形成する方法として化!
蒸着法が、知られている。この方法では、高融点化合物
の被覆の形、成が900〜1200℃で行われるため基
体が薄物あるいは細物等の変形を起こしやすい形状のも
のや一点の低い材質のものでは適用できないという制限
があった。[Technical background of the invention and its problems] Conventionally, on the surface of a substrate made of metal, ceramics, etc.
□It is a method for forming coatings of high melting point compounds such as titanium nitride and titanium carbide, which have excellent wear resistance!
Vapor deposition methods are known. In this method, the shape and formation of the high melting point compound coating is carried out at 900 to 1200°C, so there is a limitation that it cannot be applied to substrates that are thin or thin, easily deformed, or made of materials with a single point. there were.
また得られる被膜の表面状態が粗雑であり、装飾用とし
ては不適当であるという欠点があった。Another disadvantage is that the surface of the resulting coating is rough, making it unsuitable for decorative purposes.
このため腕時計等の外側として用いた場合、耐摩耗性向
上と装飾性付与の目的の為に、上述の金属化合物を被覆
する場合にグロー放電空間を基体近傍に形成させて、放
電エネルギーにより、化学反応を起こさせ、被覆に要す
るする加熱温度を400〜600℃と低くして行なうグ
ロー放電化学蒸着法が検討されている。For this reason, when used as the outside of a wristwatch, etc., a glow discharge space is formed near the base when coating with the above-mentioned metal compound in order to improve wear resistance and add decorative properties. A glow discharge chemical vapor deposition method is being considered in which the reaction is caused and the heating temperature required for coating is as low as 400 to 600°C.
この方法を例えば基体表面に金属窒化物を被覆する場合
について第1図を参照して説明すると、まず初めに真空
ポンプに接続された排気口1より排気して真空容器2内
を1O−sTorr以下の真空度まで排気した後、ガス
供給口3から金属ハロゲン化物と窒素と水素との混合ガ
スを、真空容I2内が0.1〜10Torrの圧になる
よう真空容器2内に導入する。真空容器2内には、被処
理基体4を電気的に導通した状態で設置しうる陰極板5
と陰極板5の上方に所定の開隔をおいて支持される陽極
板6とが配置されている。この電極間で200〜8QO
OVの直流電圧を印加し、かつ陰極板5の裏面に設けら
れた加熱板7を加熱して被処理基体を200〜1000
℃、好ましくは400〜600℃にすることにより、彼
処l!基体近傍にグロー放電空間が形成され、基体表面
で混合ガスが反応して金属窒化□物の被膜が形成される
。This method will be explained with reference to FIG. 1 when, for example, the surface of a substrate is coated with a metal nitride. First, the inside of the vacuum chamber 2 is evacuated from the exhaust port 1 connected to a vacuum pump to a pressure below 1O-sTorr. After evacuating to a degree of vacuum, a mixed gas of metal halide, nitrogen, and hydrogen is introduced into the vacuum container 2 from the gas supply port 3 so that the pressure in the vacuum volume I2 becomes 0.1 to 10 Torr. Inside the vacuum container 2, there is a cathode plate 5 that can be placed in an electrically conductive state with the substrate 4 to be processed.
and an anode plate 6 supported above the cathode plate 5 at a predetermined distance. 200~8QO between this electrode
A DC voltage of OV is applied and the heating plate 7 provided on the back surface of the cathode plate 5 is heated to heat the substrate to a temperature of 200 to 1,000.
℃, preferably 400 to 600℃, the temperature can be reduced! A glow discharge space is formed near the substrate, and the mixed gas reacts on the surface of the substrate to form a metal nitride film.
しかしながらこの方法においては、処理できる被!6I
!基体の数が陰極板上に載置できる数に制限されるため
、大量の基体讐同時に処理することが困難であった。However, in this method, the amount of material that can be treated is limited. 6I
! Since the number of substrates is limited to the number that can be placed on the cathode plate, it has been difficult to process a large number of substrates at the same time.
[発明の目的]
本発明は、大量の基体を処理する場合であっても、均−
笑肩な装飾被膜が形成できる金属化合物′被膜の形成方
法を提供することを目的とする。[Object of the invention] The present invention provides uniform processing even when processing a large number of substrates.
The object of the present invention is to provide a method for forming a metal compound film that can form an attractive decorative film.
[発明の概要]
本発明は第2@lに示すようなガス供給口3、排気ロー
並びに器壁の加熱手段8を備えた真空容器2内に、陰極
板5を下方に陽極板6を上方に開隔をおいて複数個対向
配置し、各陰極板5上に被処理基体4を載置して前記真
空容器2内を真空にし、次いでガス状金属化合物を含む
反応ガスを0.1〜10Torrとなるよう導入し、前
記両極間に200〜8000Vの直流電圧を印加して彼
処]!!基体4近傍に放電空間を形成するとともに、前
記真空容器2内を約200〜1000℃に加熱して前記
被処理基体4表面に金属化合物の被膜を形成することを
特徴と1::するものである。[Summary of the Invention] The present invention provides a vacuum vessel 2 equipped with a gas supply port 3, an exhaust row, and a vessel wall heating means 8 as shown in No. 2@l, with a cathode plate 5 placed downward and an anode plate 6 placed upward. A plurality of substrates 4 to be treated are placed on each cathode plate 5 and the inside of the vacuum container 2 is evacuated, and then a reaction gas containing a gaseous metal compound is applied at a rate of 0.1 to 0. 10 Torr, and apply a DC voltage of 200 to 8000 V between the two poles]! ! A discharge space is formed in the vicinity of the substrate 4, and the inside of the vacuum container 2 is heated to about 200 to 1000°C to form a metal compound coating on the surface of the substrate 4 to be processed. be.
本発明に適用11□11□1きれる金属化合物としては
、N8、:::
Va 、 Vla族の“、窒化物、炭化物、ホウ化物ま
たは□■・八
それらの組合せ−があり、原料ガスとしては、こ
)れら■a 、 va 、 ■a族のハロゲン化物と水
素と窒素(あるいは窒素の代りにアンモニアガス)とを
用いる。これらのガスの混合比重は金属ハロゲン化物:
水素:窒素のモル比が1:12〜100:1〜100好
ましくは1:12〜5o:1〜3゜がよい。その理由は
、この値をはずれると装飾性のある被膜が均一に得られ
難いことによる。Metal compounds that can be applied to the present invention include N8, Va, Vla group compounds, nitrides, carbides, borides, or combinations thereof, and raw material gases include ,child
) Use a halide of the a, va, or group a, hydrogen, and nitrogen (or ammonia gas instead of nitrogen). The mixing specific gravity of these gases is metal halide:
The hydrogen:nitrogen molar ratio is preferably 1:12 to 100:1 to 100, preferably 1:12 to 5°:1 to 3°. The reason for this is that if it deviates from this value, it is difficult to obtain a uniform decorative film.
門た本発明方法は、金属、半導体、導電性セラミックス
等のほか、電気導電性のものであればどのような材料の
基体に対しても均一な装飾性めある金属化合物被膜を形
成することができる。The method of the present invention can form a uniform decorative metal compound coating on any electrically conductive material substrate, including metals, semiconductors, and conductive ceramics. can.
[発明の実施例] 次ぎに本発明の実施”例について説明する。[Embodiments of the invention] Next, an implementation example of the present invention will be described.
実施例
円柱状の真空容器内に円板状の陰極板を3つ配置し、こ
の陰極板のそれぞれの上方に陽極板を配置した処理@胃
を使用し、この陰極板のそれぞれにC「38%、八13
.8%、N1残の組成の合金からなる25箇X25+s
X4+nの金属板を被処理基体として900個載置して
次ぎの条件で処理を行なった。Example A treatment @ stomach was used in which three disk-shaped cathode plates were placed in a cylindrical vacuum container, and an anode plate was placed above each of the cathode plates. %, 813
.. 25 pieces x 25+s consisting of an alloy with a composition of 8% and the remainder N1
900 X4+n metal plates were placed as substrates to be processed and processed under the following conditions.
いずれの基体にも厚さ1μ−の均−美麗なTlNの被膜
が形成された。A uniform and beautiful TIN film with a thickness of 1 μm was formed on each substrate.
反応ガス組成 TI CJ24 :H2:N2−1:
19:6(モル比)
圧 力 2T0rr
電 圧 500v
電流密W1 0.11A101
基体の濃度 550℃
処11#fl 30分
[発明の効1]
以上の実施例からも明らかなように本発明方法によれば
、大量の基体について均一な色むらのない美麗′な被膜
が得られる。Reaction gas composition TI CJ24:H2:N2-1:
19:6 (molar ratio) Pressure 2T0rr Voltage 500v Current density W1 0.11A101 Substrate concentration 550°C 11#fl 30 minutes [Effect 1 of the invention] As is clear from the above examples, the method of the present invention According to this method, it is possible to obtain a uniform, beautiful coating without uneven color on a large number of substrates.
第1!llは従来方法に使用する装置の概略を示す断面
図、第2図は本発明方法に使用する装置の概略を示す断
面図である。
2・・・・・・・・・・・・真空容器
4・・・・・・・・・・・・被処理基体5・・・・・す
・・・・・陰極板
6・・・・・・・・・・・・陽極板
8・・・・・・・・・・・・加熱手段
(7317) 代理人弁理士 則近憲佑(ほか1名)1st! 11 is a sectional view schematically showing the apparatus used in the conventional method, and FIG. 2 is a sectional view schematically showing the apparatus used in the method of the present invention. 2......Vacuum vessel 4...Substrate to be processed 5...Cathode plate 6...・・・・・・・・・Anode plate 8・・・・・・・・・Heating means (7317) Representative patent attorney Kensuke Norichika (and 1 other person)
Claims (1)
容器内に、陰極板と一極板を4間隔をおいて複数個対向
配置し、各陰極板上に被処理基体を載置して前記真空容
器内を真空にし、次いでガス状金属化合物を含む反応ガ
スを0.1〜10To。 rとなるよう導入し、前記両極間に200〜8゜00v
の直流電圧を印加して彼処MW体近傍に放電空間を形成
するとともに、前記真空容器の器壁を加熱して前記彼処
l!基体表面に金属化合物の被膜を形成することを特徴
とする金属化合物被膜の形成方法。[Claims] In a vacuum container equipped with a gas supply port, an exhaust port, and means for heating the container wall, a plurality of cathode plates and monopolar plates are arranged facing each other at four intervals, and each cathode plate is covered with a coating. A substrate to be treated is placed, the vacuum container is evacuated, and then a reaction gas containing a gaseous metal compound is supplied at 0.1 to 10 To. r, and apply 200 to 8゜00V between the two poles.
A DC voltage of 1! is applied to form a discharge space in the vicinity of the MW body, and the wall of the vacuum vessel is heated to generate the MW body. A method for forming a metal compound film, the method comprising forming a metal compound film on the surface of a substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4571082A JPS58164777A (en) | 1982-03-24 | 1982-03-24 | Formation of metallic compound film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4571082A JPS58164777A (en) | 1982-03-24 | 1982-03-24 | Formation of metallic compound film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58164777A true JPS58164777A (en) | 1983-09-29 |
JPH0246668B2 JPH0246668B2 (en) | 1990-10-16 |
Family
ID=12726901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4571082A Granted JPS58164777A (en) | 1982-03-24 | 1982-03-24 | Formation of metallic compound film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58164777A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5953837U (en) * | 1982-09-27 | 1984-04-09 | 光洋機械産業株式会社 | mixer for cement paste |
JPS6328871A (en) * | 1986-07-22 | 1988-02-06 | Toshiba Corp | Plasma cvd treating device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53118235A (en) * | 1977-03-23 | 1978-10-16 | Vide & Traitement Sa | Plural cathode thermoion treatment furnace |
-
1982
- 1982-03-24 JP JP4571082A patent/JPS58164777A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53118235A (en) * | 1977-03-23 | 1978-10-16 | Vide & Traitement Sa | Plural cathode thermoion treatment furnace |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5953837U (en) * | 1982-09-27 | 1984-04-09 | 光洋機械産業株式会社 | mixer for cement paste |
JPS6234726Y2 (en) * | 1982-09-27 | 1987-09-04 | ||
JPS6328871A (en) * | 1986-07-22 | 1988-02-06 | Toshiba Corp | Plasma cvd treating device |
Also Published As
Publication number | Publication date |
---|---|
JPH0246668B2 (en) | 1990-10-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3771976A (en) | Metal carbonitride-coated article and method of producing same | |
JPS61295377A (en) | Formation of membrane | |
EP0064884B1 (en) | Method and apparatus for coating by glow discharge | |
US3880728A (en) | Manufacture of lead dioxide/titanium composite electrodes | |
JPH02247393A (en) | Electrolytic electrode with durability and its production | |
JPS6063372A (en) | Manufacture of thin boron nitride film of high hardness | |
JPS58164777A (en) | Formation of metallic compound film | |
JP2002177765A5 (en) | Thin film preparation method | |
JPS58174568A (en) | Formation of film of metal compound | |
JPS58174569A (en) | Formation of film comprising metal compound | |
KR101859116B1 (en) | Methods for coating surface of iron-based alloy and products with high corrosion resistance and high conductivity manufactured thereby | |
JPS6358798B2 (en) | ||
JPS5915983B2 (en) | Formation method of boron film | |
JPH02157123A (en) | Production of thin barium titanate film | |
JPS6173881A (en) | Vapor growth device | |
JPS5970767A (en) | Method and device for coating by glow discharge | |
JPS58151468A (en) | Formation of metallic compound film | |
JPS58133368A (en) | Formation of boron coating film | |
JP6797068B2 (en) | Method for manufacturing titanium carbide-containing thin film by atomic layer deposition method | |
JPS6151629B2 (en) | ||
JPH03267361A (en) | Hard film and its production | |
JPH0772352B2 (en) | Chemical vapor deposition apparatus and chemical vapor deposition method | |
JP2567843B2 (en) | Hybrid ion plating method and apparatus | |
JPH02274867A (en) | Production of multiple material film | |
JPS60245233A (en) | Manufacture of semiconductor device |