SG76474A1 - Process for producing thin films of inorganic oxides of controlled stoichiometry - Google Patents

Process for producing thin films of inorganic oxides of controlled stoichiometry

Info

Publication number
SG76474A1
SG76474A1 SG1996008311A SG1996008311A SG76474A1 SG 76474 A1 SG76474 A1 SG 76474A1 SG 1996008311 A SG1996008311 A SG 1996008311A SG 1996008311 A SG1996008311 A SG 1996008311A SG 76474 A1 SG76474 A1 SG 76474A1
Authority
SG
Singapore
Prior art keywords
thin films
inorganic oxides
producing thin
controlled stoichiometry
oxides
Prior art date
Application number
SG1996008311A
Other languages
English (en)
Inventor
Face Dean Willett
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Publication of SG76474A1 publication Critical patent/SG76474A1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0381Processes for depositing or forming copper oxide superconductor layers by evaporation, e.g. MBE
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/087Oxides of copper or solid solutions thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/725Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73Vacuum treating or coating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/725Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73Vacuum treating or coating
    • Y10S505/731Sputter coating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/725Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73Vacuum treating or coating
    • Y10S505/732Evaporative coating with superconducting material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Glass Compositions (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
SG1996008311A 1992-03-13 1993-03-10 Process for producing thin films of inorganic oxides of controlled stoichiometry SG76474A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US85062192A 1992-03-13 1992-03-13
US98413492A 1992-12-09 1992-12-09

Publications (1)

Publication Number Publication Date
SG76474A1 true SG76474A1 (en) 2000-11-21

Family

ID=27126941

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996008311A SG76474A1 (en) 1992-03-13 1993-03-10 Process for producing thin films of inorganic oxides of controlled stoichiometry

Country Status (13)

Country Link
US (1) US5389606A (ko)
EP (1) EP0630422B1 (ko)
JP (1) JP3451352B2 (ko)
KR (1) KR100276539B1 (ko)
AT (1) ATE137811T1 (ko)
CA (1) CA2131791A1 (ko)
DE (1) DE69302572T2 (ko)
DK (1) DK0630422T3 (ko)
ES (1) ES2087740T3 (ko)
GR (1) GR3020559T3 (ko)
HK (1) HK180596A (ko)
SG (1) SG76474A1 (ko)
WO (1) WO1993018200A1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5892243A (en) * 1996-12-06 1999-04-06 Trw Inc. High-temperature SSNS and SNS Josephson junction and method of making junction
JP3385889B2 (ja) * 1996-12-25 2003-03-10 株式会社日立製作所 強誘電体メモリ素子及びその製造方法
US6120857A (en) * 1998-05-18 2000-09-19 The Regents Of The University Of California Low work function surface layers produced by laser ablation using short-wavelength photons
US6129898A (en) * 1998-08-17 2000-10-10 Ford Global Technologies, Inc. NOx trap catalyst for lean burn engines
US7439208B2 (en) * 2003-12-01 2008-10-21 Superconductor Technologies, Inc. Growth of in-situ thin films by reactive evaporation
US20100279124A1 (en) * 2008-10-31 2010-11-04 Leybold Optics Gmbh Hafnium or zirconium oxide Coating

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH075435B2 (ja) * 1987-03-31 1995-01-25 住友電気工業株式会社 超電導薄膜の製造方法及び装置
DE3726016A1 (de) * 1987-08-05 1989-02-16 Siemens Ag Verfahren zur herstellung eines schichtartigen aufbaus aus einem oxidkeramischen supralteitermaterial
DE3734069A1 (de) * 1987-10-08 1989-04-20 Siemens Ag Verfahren zur abscheidung von schichten aus einem oxidkeramischen supraleitermaterial auf einem substrat
DE3827069A1 (de) * 1987-11-21 1989-06-08 Asea Brown Boveri Verfahren zur herstellung eines supraleiters
DE3822502C1 (ko) * 1988-07-03 1989-08-24 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
JPH02212351A (ja) * 1989-02-10 1990-08-23 Mitsubishi Metal Corp 超電導セラミックス膜形成用ターゲット材
DE4006489A1 (de) * 1990-03-02 1991-09-05 Hoechst Ag Vorrichtung zum herstellen duenner schichten aus metallmischoxiden aus organischen metallverbindungen auf einem substrat

Also Published As

Publication number Publication date
JPH07505114A (ja) 1995-06-08
JP3451352B2 (ja) 2003-09-29
KR100276539B1 (ko) 2000-12-15
ES2087740T3 (es) 1996-07-16
WO1993018200A1 (en) 1993-09-16
KR950700436A (ko) 1995-01-16
DE69302572D1 (de) 1996-06-13
HK180596A (en) 1996-10-04
EP0630422A1 (en) 1994-12-28
DK0630422T3 (da) 1996-06-10
ATE137811T1 (de) 1996-05-15
CA2131791A1 (en) 1993-09-16
DE69302572T2 (de) 1996-12-05
US5389606A (en) 1995-02-14
EP0630422B1 (en) 1996-05-08
GR3020559T3 (en) 1996-10-31

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