ES2079587T3 - Procedimiento para formar un revestimiento ceramico sobre un sustrato. - Google Patents

Procedimiento para formar un revestimiento ceramico sobre un sustrato.

Info

Publication number
ES2079587T3
ES2079587T3 ES91311212T ES91311212T ES2079587T3 ES 2079587 T3 ES2079587 T3 ES 2079587T3 ES 91311212 T ES91311212 T ES 91311212T ES 91311212 T ES91311212 T ES 91311212T ES 2079587 T3 ES2079587 T3 ES 2079587T3
Authority
ES
Spain
Prior art keywords
substrate
ceramic
layer
forming
temperature gradient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91311212T
Other languages
English (en)
Inventor
Mark Jon Loboda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Application granted granted Critical
Publication of ES2079587T3 publication Critical patent/ES2079587T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1291—Process of deposition of the inorganic material by heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Chemically Coating (AREA)

Abstract

LA PRESENTE INVENCION SE REFIERE A UN METODO DE FORMAR UNA CAPA CERAMICA HOMOGENEA EN UN SUBSTRATO. EL METODO CONSISTE EN DEPOSITAR UNA CAPA PRECERAMICA EN EL SUBSTRATO Y LUEGO CALENTAR EL SUBSTRATO A LA VEZ QUE SE DIRIGE UNA CORRIENTE DE UN GAS REFRIGERANTE EN LA SUPERFICIE DE LA CAPA PRECERAMICA DE TAL MANERA QUE SE DESARROLLE UN GRADIENTE DE TEMPERATURA EN LA CAPA. ESTE GRADIENTE DE TEMPERATURA SE CREA DE TAL MANERA QUE EL MATERIAL PRECERAMICO CERCA DEL SUBSTRATO SE CONVIERTE EN SU FORMA CERAMICA EN TANTO QUE EL MATERIAL PRECERAMICO CERCA DE LA SUPERFICIE DE LA CAPA ES IMPEDIDO DE LA CONVERSION. EL GRADIENTE DE TEMPERATURA SE DISMINUYE LUEGO EN EL TIEMPO PARA QUE TODO EL MATERIAL PRECERAMICO SE CONVIERTA EN CERAMICO DESDE EL SUBSTRATO HACIA AFUERA PARA FORMAR UNA CAPA HOMOGENEA EN EL SUBSTRATO.
ES91311212T 1990-12-24 1991-12-03 Procedimiento para formar un revestimiento ceramico sobre un sustrato. Expired - Lifetime ES2079587T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/633,707 US5380553A (en) 1990-12-24 1990-12-24 Reverse direction pyrolysis processing

Publications (1)

Publication Number Publication Date
ES2079587T3 true ES2079587T3 (es) 1996-01-16

Family

ID=24540781

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91311212T Expired - Lifetime ES2079587T3 (es) 1990-12-24 1991-12-03 Procedimiento para formar un revestimiento ceramico sobre un sustrato.

Country Status (8)

Country Link
US (1) US5380553A (es)
EP (1) EP0492826B1 (es)
JP (1) JP3044318B2 (es)
KR (1) KR100232617B1 (es)
CA (1) CA2057082A1 (es)
DE (1) DE69112797T2 (es)
ES (1) ES2079587T3 (es)
TW (1) TW228510B (es)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5387480A (en) * 1993-03-08 1995-02-07 Dow Corning Corporation High dielectric constant coatings
DE69333722T2 (de) * 1993-05-31 2005-12-08 Stmicroelectronics S.R.L., Agrate Brianza Verfahren zur Verbesserung der Haftung zwischen Dielektrikschichten, an ihrer Grenzfläche, in der Herstellung von Halbleiterbauelementen
JP2739902B2 (ja) * 1993-09-30 1998-04-15 東京応化工業株式会社 酸化ケイ素系被膜形成用塗布液
US5439846A (en) * 1993-12-17 1995-08-08 Sgs-Thomson Microelectronics, Inc. Self-aligned method for forming contact with zero offset to gate
US6284584B1 (en) * 1993-12-17 2001-09-04 Stmicroelectronics, Inc. Method of masking for periphery salicidation of active regions
US6107194A (en) * 1993-12-17 2000-08-22 Stmicroelectronics, Inc. Method of fabricating an integrated circuit
JPH0855810A (ja) * 1994-08-16 1996-02-27 Nec Kyushu Ltd 拡散炉
US5508062A (en) 1994-12-02 1996-04-16 Dow Corning Corporation Method for forming an insoluble coating on a substrate
EP0720223B1 (en) * 1994-12-30 2003-03-26 STMicroelectronics S.r.l. Process for the production of a semiconductor device having better interface adhesion between dielectric layers
US6117233A (en) * 1995-02-07 2000-09-12 Max-Planck-Gesellschaft Zur Forderung De Formation of single-crystal thin SiC films
US5731260A (en) * 1996-02-13 1998-03-24 Aerojet-General Corporation Binding of sorbent in assembling solid sorption compressor cores
US5786023A (en) * 1996-02-13 1998-07-28 Maxwell; James L. Method and apparatus for the freeform growth of three-dimensional structures using pressurized precursor flows and growth rate control
US5707683A (en) * 1996-02-22 1998-01-13 Dow Corning Corporation Electronic coating composition method of coating an electronic substrate, composition and article
JP3415741B2 (ja) * 1997-03-31 2003-06-09 東レ・ダウコーニング・シリコーン株式会社 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法
JP3354431B2 (ja) * 1997-03-31 2002-12-09 東レ・ダウコーニング・シリコーン株式会社 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法
US6350704B1 (en) 1997-10-14 2002-02-26 Micron Technology Inc. Porous silicon oxycarbide integrated circuit insulator
US6633623B2 (en) * 2000-11-29 2003-10-14 General Electric Company Apparatus and methods for protecting a jet pump nozzle assembly and inlet-mixer
KR101032624B1 (ko) * 2009-06-22 2011-05-06 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR102206876B1 (ko) 2018-11-30 2021-01-25 한국과학기술연구원 세슘 이온 흡착제, 이의 제조방법 및 이를 이용한 세슘 이온 제거 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615272A (en) * 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US4822697A (en) * 1986-12-03 1989-04-18 Dow Corning Corporation Platinum and rhodium catalysis of low temperature formation multilayer ceramics
US4911992A (en) * 1986-12-04 1990-03-27 Dow Corning Corporation Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides
US4749631B1 (en) * 1986-12-04 1993-03-23 Multilayer ceramics from silicate esters
DE3707224A1 (de) * 1987-03-06 1988-09-15 Wacker Chemie Gmbh Verfahren zur herstellung eines schutzueberzuges auf basis von siliciumcarbid
JPS6486975A (en) * 1987-09-29 1989-03-31 Permelec Electrode Ltd Preparation of calcium phosphate compound coated composite material
US4847162A (en) * 1987-12-28 1989-07-11 Dow Corning Corporation Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia
US4842888A (en) * 1988-04-07 1989-06-27 Dow Corning Corporation Ceramic coatings from the pyrolysis in ammonia of mixtures of silicate esters and other metal oxide precursors
JP2512402B2 (ja) * 1988-06-22 1996-07-03 日新製鋼株式会社 ジルコニア膜の製造方法
US4973526A (en) * 1990-02-15 1990-11-27 Dow Corning Corporation Method of forming ceramic coatings and resulting articles

Also Published As

Publication number Publication date
US5380553A (en) 1995-01-10
DE69112797D1 (de) 1995-10-12
KR100232617B1 (ko) 1999-12-01
JPH04300678A (ja) 1992-10-23
CA2057082A1 (en) 1992-06-25
TW228510B (es) 1994-08-21
DE69112797T2 (de) 1996-05-02
KR920014375A (ko) 1992-07-30
EP0492826A2 (en) 1992-07-01
EP0492826A3 (en) 1993-03-03
JP3044318B2 (ja) 2000-05-22
EP0492826B1 (en) 1995-09-06

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