JPS57210972A - Formation of film - Google Patents
Formation of filmInfo
- Publication number
- JPS57210972A JPS57210972A JP9583381A JP9583381A JPS57210972A JP S57210972 A JPS57210972 A JP S57210972A JP 9583381 A JP9583381 A JP 9583381A JP 9583381 A JP9583381 A JP 9583381A JP S57210972 A JPS57210972 A JP S57210972A
- Authority
- JP
- Japan
- Prior art keywords
- temp
- films
- substrate
- film
- film formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
Abstract
PURPOSE:To prevent curving of a film owing to the stress in the thickness direction of the formed film by controlling the temp. of the film to be vapor-deposited on a substrate and the temp. of substrate to below the elevated temp. by the radiation heat from vapor source for filming material. CONSTITUTION:In a physical vapor deposition or chemical vapor deposition method, the temp. of a substrate from the start of film formation until the end thereof is set at the temp. higher than the elevated temp. by the radiation heat from vapor sources for filming materials, the heat conducted from evaporating particles, etc., and the surface temps. of the substrate during film formation and the formed films are maintained at a constant or always dropping state from the start of the film formation until the end thereof, whereby the thermal expansion on the surface to be formed with the films is suppressed and the curving of the films owing to the differences in the stresses in the films formed when the temp. drops is prevented. The films having good fits to the substrate shapes are obtained by this and the films obtained by removing the substrate by etching are free from curling.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9583381A JPS57210972A (en) | 1981-06-19 | 1981-06-19 | Formation of film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9583381A JPS57210972A (en) | 1981-06-19 | 1981-06-19 | Formation of film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57210972A true JPS57210972A (en) | 1982-12-24 |
JPH0135073B2 JPH0135073B2 (en) | 1989-07-24 |
Family
ID=14148380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9583381A Granted JPS57210972A (en) | 1981-06-19 | 1981-06-19 | Formation of film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57210972A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04323891A (en) * | 1991-04-23 | 1992-11-13 | Matsushita Electric Works Ltd | Method of forming conductor film on ceramic circuit board |
JPH04323892A (en) * | 1991-04-23 | 1992-11-13 | Matsushita Electric Works Ltd | Method of forming conductive film on ceramic circuit board |
GB2462604A (en) * | 2008-08-11 | 2010-02-17 | Toshiba Res Europ Ltd | Thin film structure for use in bioassay applications |
-
1981
- 1981-06-19 JP JP9583381A patent/JPS57210972A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04323891A (en) * | 1991-04-23 | 1992-11-13 | Matsushita Electric Works Ltd | Method of forming conductor film on ceramic circuit board |
JPH04323892A (en) * | 1991-04-23 | 1992-11-13 | Matsushita Electric Works Ltd | Method of forming conductive film on ceramic circuit board |
GB2462604A (en) * | 2008-08-11 | 2010-02-17 | Toshiba Res Europ Ltd | Thin film structure for use in bioassay applications |
GB2462604B (en) * | 2008-08-11 | 2011-08-10 | Toshiba Res Europ Ltd | Thin film structure and method for fabricating a thin film structure |
Also Published As
Publication number | Publication date |
---|---|
JPH0135073B2 (en) | 1989-07-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57134558A (en) | Production of organic vapor deposited thin film | |
WO2000028103A3 (en) | Vapor source having linear aperture and coating process | |
JPS52123172A (en) | Spin coating method | |
CA2175045A1 (en) | Vapor phase chemical infiltration process of a material into a porous substrate at controlled surface temperature | |
JPS57141930A (en) | Device for formation of thin film | |
JPS57210972A (en) | Formation of film | |
EP0349044A3 (en) | Process for the production of a protective film on a magnesium-based substrate, application to the protection of magnesium alloys, substrates thus obtained | |
US4537651A (en) | Method for removing semiconductor layers from salt substrates | |
EP0269112A3 (en) | Method of forming a thin crystalline metal film | |
JPH03183778A (en) | Method and device for forming deposited film | |
JPS5619030A (en) | Production of liquid crystal display element | |
JPS55104999A (en) | Production of silicon carbide crystal layer | |
JPS5795823A (en) | Manufacture of boron sheet | |
JPS53146300A (en) | Production of silicon carbide substrate | |
Dabosi et al. | Process for producing a protective film on magnesium containing substrates by chemical vapor deposition of two or more layers | |
JPS55124244A (en) | Method of fabricating chip component | |
JPS5785971A (en) | Thin film former | |
JPS579870A (en) | Formation of vapor-deposited film consisting of two or more elements | |
JPS5634150A (en) | Manufacture of magnetic recording medium | |
JPS55105000A (en) | Production of silicon carbide crystal layer | |
JPS5816066A (en) | Vacuum plating device | |
Brik et al. | Effect of the Substrate Temperature on the Coefficient of Condensation of Aluminum Films | |
JPS57147431A (en) | Plasma gas phase method | |
JPS56156770A (en) | Structural material for high temperature | |
Vigdorovich et al. | The Thermal Width of the Forbidden Band in Thin Tellurium Films |