JPS57210972A - Formation of film - Google Patents

Formation of film

Info

Publication number
JPS57210972A
JPS57210972A JP9583381A JP9583381A JPS57210972A JP S57210972 A JPS57210972 A JP S57210972A JP 9583381 A JP9583381 A JP 9583381A JP 9583381 A JP9583381 A JP 9583381A JP S57210972 A JPS57210972 A JP S57210972A
Authority
JP
Japan
Prior art keywords
temp
films
substrate
film
film formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9583381A
Other languages
Japanese (ja)
Other versions
JPH0135073B2 (en
Inventor
Hiroshi Takeuchi
Yoshiaki Maruno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9583381A priority Critical patent/JPS57210972A/en
Publication of JPS57210972A publication Critical patent/JPS57210972A/en
Publication of JPH0135073B2 publication Critical patent/JPH0135073B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/541Heating or cooling of the substrates

Abstract

PURPOSE:To prevent curving of a film owing to the stress in the thickness direction of the formed film by controlling the temp. of the film to be vapor-deposited on a substrate and the temp. of substrate to below the elevated temp. by the radiation heat from vapor source for filming material. CONSTITUTION:In a physical vapor deposition or chemical vapor deposition method, the temp. of a substrate from the start of film formation until the end thereof is set at the temp. higher than the elevated temp. by the radiation heat from vapor sources for filming materials, the heat conducted from evaporating particles, etc., and the surface temps. of the substrate during film formation and the formed films are maintained at a constant or always dropping state from the start of the film formation until the end thereof, whereby the thermal expansion on the surface to be formed with the films is suppressed and the curving of the films owing to the differences in the stresses in the films formed when the temp. drops is prevented. The films having good fits to the substrate shapes are obtained by this and the films obtained by removing the substrate by etching are free from curling.
JP9583381A 1981-06-19 1981-06-19 Formation of film Granted JPS57210972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9583381A JPS57210972A (en) 1981-06-19 1981-06-19 Formation of film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9583381A JPS57210972A (en) 1981-06-19 1981-06-19 Formation of film

Publications (2)

Publication Number Publication Date
JPS57210972A true JPS57210972A (en) 1982-12-24
JPH0135073B2 JPH0135073B2 (en) 1989-07-24

Family

ID=14148380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9583381A Granted JPS57210972A (en) 1981-06-19 1981-06-19 Formation of film

Country Status (1)

Country Link
JP (1) JPS57210972A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04323891A (en) * 1991-04-23 1992-11-13 Matsushita Electric Works Ltd Method of forming conductor film on ceramic circuit board
JPH04323892A (en) * 1991-04-23 1992-11-13 Matsushita Electric Works Ltd Method of forming conductive film on ceramic circuit board
GB2462604A (en) * 2008-08-11 2010-02-17 Toshiba Res Europ Ltd Thin film structure for use in bioassay applications

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04323891A (en) * 1991-04-23 1992-11-13 Matsushita Electric Works Ltd Method of forming conductor film on ceramic circuit board
JPH04323892A (en) * 1991-04-23 1992-11-13 Matsushita Electric Works Ltd Method of forming conductive film on ceramic circuit board
GB2462604A (en) * 2008-08-11 2010-02-17 Toshiba Res Europ Ltd Thin film structure for use in bioassay applications
GB2462604B (en) * 2008-08-11 2011-08-10 Toshiba Res Europ Ltd Thin film structure and method for fabricating a thin film structure

Also Published As

Publication number Publication date
JPH0135073B2 (en) 1989-07-24

Similar Documents

Publication Publication Date Title
JPS57134558A (en) Production of organic vapor deposited thin film
WO2000028103A3 (en) Vapor source having linear aperture and coating process
JPS52123172A (en) Spin coating method
CA2175045A1 (en) Vapor phase chemical infiltration process of a material into a porous substrate at controlled surface temperature
JPS57141930A (en) Device for formation of thin film
JPS57210972A (en) Formation of film
EP0349044A3 (en) Process for the production of a protective film on a magnesium-based substrate, application to the protection of magnesium alloys, substrates thus obtained
US4537651A (en) Method for removing semiconductor layers from salt substrates
EP0269112A3 (en) Method of forming a thin crystalline metal film
JPH03183778A (en) Method and device for forming deposited film
JPS5619030A (en) Production of liquid crystal display element
JPS55104999A (en) Production of silicon carbide crystal layer
JPS5795823A (en) Manufacture of boron sheet
JPS53146300A (en) Production of silicon carbide substrate
Dabosi et al. Process for producing a protective film on magnesium containing substrates by chemical vapor deposition of two or more layers
JPS55124244A (en) Method of fabricating chip component
JPS5785971A (en) Thin film former
JPS579870A (en) Formation of vapor-deposited film consisting of two or more elements
JPS5634150A (en) Manufacture of magnetic recording medium
JPS55105000A (en) Production of silicon carbide crystal layer
JPS5816066A (en) Vacuum plating device
Brik et al. Effect of the Substrate Temperature on the Coefficient of Condensation of Aluminum Films
JPS57147431A (en) Plasma gas phase method
JPS56156770A (en) Structural material for high temperature
Vigdorovich et al. The Thermal Width of the Forbidden Band in Thin Tellurium Films