JPS5785971A - Thin film former - Google Patents

Thin film former

Info

Publication number
JPS5785971A
JPS5785971A JP16167380A JP16167380A JPS5785971A JP S5785971 A JPS5785971 A JP S5785971A JP 16167380 A JP16167380 A JP 16167380A JP 16167380 A JP16167380 A JP 16167380A JP S5785971 A JPS5785971 A JP S5785971A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
plate
vessel
impurities
inside wall
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16167380A
Inventor
Tamotsu Hatayama
Yasuhiro Horiike
Hiroshi Ito
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating

Abstract

PURPOSE:To prevent falling of dust and inclusion of impurities, etc. at the forming of thin films surely by enclosing the thin film forming part in a vacuum vessel by using a hot plate. CONSTITUTION:A hot plate 7 of a torus shape or the like is disposed to enclose a thin film forming part consisting of a sputter vapor depositing part provided with electrodes 3a, 3b, etc. in a vacuum vessel 1, and a heater 8 is mounted on the outside circumferential surface of the plate 7. Then, the heater 7 is heated and therefore the evaporating material stuck on the plate 7 during film forming sticks tightly to the plate 7 by forming dense and strong films, so that falling of the dust and the like once stuck to the inside wall of the vessel 1 and peeled therefrom is prevented. If the electrodes 3a, 3b and the plate 7 are heated prior to film formation, strains and impurities can be expelled from the inside wall of the vessel 1. Further, the evaporating material is beforehand evaporated to form films on the plate 7 before a substrate 6 is contained therein, by which the deposition of the impurities from the plate 7 and the impurity deposition from the plate 7 and the inside wall of the vessel 1 by the impact of sputtered ions are prevented.
JP16167380A 1980-11-17 1980-11-17 Thin film former Pending JPS5785971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16167380A JPS5785971A (en) 1980-11-17 1980-11-17 Thin film former

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16167380A JPS5785971A (en) 1980-11-17 1980-11-17 Thin film former

Publications (1)

Publication Number Publication Date
JPS5785971A true true JPS5785971A (en) 1982-05-28

Family

ID=15739663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16167380A Pending JPS5785971A (en) 1980-11-17 1980-11-17 Thin film former

Country Status (1)

Country Link
JP (1) JPS5785971A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5980461U (en) * 1982-11-18 1984-05-31
JPH04123257U (en) * 1991-04-16 1992-11-06
EP0562035A1 (en) * 1990-12-11 1993-09-29 Lam Research Corporation Minimization of particle generation in cvd reactors and methods
JP2010223382A (en) * 2009-03-24 2010-10-07 Choshu Denki:Kk Expansion and contraction device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5980461U (en) * 1982-11-18 1984-05-31
EP0562035A1 (en) * 1990-12-11 1993-09-29 Lam Research Corporation Minimization of particle generation in cvd reactors and methods
EP0562035A4 (en) * 1990-12-11 1995-12-13 Lam Res Corp Minimization of particle generation in cvd reactors and methods
JPH04123257U (en) * 1991-04-16 1992-11-06
JP2010223382A (en) * 2009-03-24 2010-10-07 Choshu Denki:Kk Expansion and contraction device

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