JPS5739172A - Apparatus for preparing thin film - Google Patents

Apparatus for preparing thin film

Info

Publication number
JPS5739172A
JPS5739172A JP11456280A JP11456280A JPS5739172A JP S5739172 A JPS5739172 A JP S5739172A JP 11456280 A JP11456280 A JP 11456280A JP 11456280 A JP11456280 A JP 11456280A JP S5739172 A JPS5739172 A JP S5739172A
Authority
JP
Japan
Prior art keywords
vapor
vapor deposition
iris
thin film
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11456280A
Other languages
Japanese (ja)
Inventor
Nobuyasu Hase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11456280A priority Critical patent/JPS5739172A/en
Publication of JPS5739172A publication Critical patent/JPS5739172A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To freely control a vapor deposition amount to the surface of a substrate plate, in vapor depositing plural vapor deposition substances on the surface of the substrate plate in a specific ratio, by a method wherein an iris is provided to the opening part of a vapor deposition source crucible receiving each vapor deposition substance and the opening area of the crucible is adjusted by said iris. CONSTITUTION:In vapor depositing a thin film comprising plural elements such as a compound, an alloy or the like on the surface of a substrate plate to be vapor deposited, to an upper opening part to plural vapor deposition source crucibles 4, an iris 1 made of a metal of which vapor pressure is low at high temp. such as W, Ta or the like is provided. In said crucibles, a vapor deposition stock material is put and heated and melted by a heater 5 wound around an outer side thereof to generate vapor. In this time, a opening area of the iris 1 is adjusted by manipulation of a lever 6 having a gear mechanism to control an evaporation amount so as to be corresponded to a constituent ratio of a compound, an alloy or the like. The thin film of the compound or the alloy with a specific composition can be easily vapor deposited.
JP11456280A 1980-08-19 1980-08-19 Apparatus for preparing thin film Pending JPS5739172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11456280A JPS5739172A (en) 1980-08-19 1980-08-19 Apparatus for preparing thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11456280A JPS5739172A (en) 1980-08-19 1980-08-19 Apparatus for preparing thin film

Publications (1)

Publication Number Publication Date
JPS5739172A true JPS5739172A (en) 1982-03-04

Family

ID=14640911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11456280A Pending JPS5739172A (en) 1980-08-19 1980-08-19 Apparatus for preparing thin film

Country Status (1)

Country Link
JP (1) JPS5739172A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0166960A2 (en) * 1984-05-28 1986-01-08 Nisshin Steel Co., Ltd. Method of rapidly changing deposition amount in a continuous vacuum deposition process
JPS63192865A (en) * 1987-02-05 1988-08-10 Tokio Nakada Sputtering device
KR101184210B1 (en) * 2010-06-10 2012-09-20 국방과학연구소 Method and apparatus for thin metal film deposition on a hemisperical resonator
JP2013136834A (en) * 2011-11-28 2013-07-11 National Institute For Materials Science Shutter device for vapor deposition and deposition apparatus using the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5331829A (en) * 1976-08-31 1978-03-25 Murata Machinery Ltd Piecing method of air spinning equipment

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5331829A (en) * 1976-08-31 1978-03-25 Murata Machinery Ltd Piecing method of air spinning equipment

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0166960A2 (en) * 1984-05-28 1986-01-08 Nisshin Steel Co., Ltd. Method of rapidly changing deposition amount in a continuous vacuum deposition process
JPS63192865A (en) * 1987-02-05 1988-08-10 Tokio Nakada Sputtering device
JPH0317906B2 (en) * 1987-02-05 1991-03-11 Tokio Nakada
KR101184210B1 (en) * 2010-06-10 2012-09-20 국방과학연구소 Method and apparatus for thin metal film deposition on a hemisperical resonator
JP2013136834A (en) * 2011-11-28 2013-07-11 National Institute For Materials Science Shutter device for vapor deposition and deposition apparatus using the same

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