JPS571274A - Manufacture of comb-shaped p-n multilayer element - Google Patents

Manufacture of comb-shaped p-n multilayer element

Info

Publication number
JPS571274A
JPS571274A JP7513680A JP7513680A JPS571274A JP S571274 A JPS571274 A JP S571274A JP 7513680 A JP7513680 A JP 7513680A JP 7513680 A JP7513680 A JP 7513680A JP S571274 A JPS571274 A JP S571274A
Authority
JP
Japan
Prior art keywords
evaporating
shielding plate
sources
source
growing substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7513680A
Other languages
Japanese (ja)
Other versions
JPS6146072B2 (en
Inventor
Suminori Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP7513680A priority Critical patent/JPS571274A/en
Publication of JPS571274A publication Critical patent/JPS571274A/en
Publication of JPS6146072B2 publication Critical patent/JPS6146072B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE:To obtain the P-N multilayer structure automatically, by arranging P and N type impurity evaporating sources in the vicinity of the evaporating source of a main constituent elememt of a semiconductor thin film, and shielding the evaporation of one impurity during the growth of the thin film. CONSTITUTION:A growing substrate 11 is heated 12 in a vacuum evaporating device. The evaporating source 13 which contains a main semiconductor element and impurities in the vertical direction is provided. The evaporating sources 14 and 15 are symmetrically provided at the positions adjacent to the source 13. Between the evaporating sources and the growing substrate, are provided a mask 16 having a hole 17 with a required size, a main shielding plate 19, and a shielding plate 18 which opens and closes only the evaporating source 15. After the temperature of the growing substrate and the evaporating sources is stabilized, the shielding plate 19 is opened, and the shielding plate 18 is periodically opened and closed by monitoring the thickness of the film during the growth. In this method, the direction of the particles from the evaporating sources 13-15 is controlled by the hole 17 in the mask 16. For example, one side 3 of the N<+>P<++> multilayer structure becomes an N<+> layer, and the other side becomes a PP<++> layered body. Thus, the basically comb shaped P-N multilayer is completed.
JP7513680A 1980-06-04 1980-06-04 Manufacture of comb-shaped p-n multilayer element Granted JPS571274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7513680A JPS571274A (en) 1980-06-04 1980-06-04 Manufacture of comb-shaped p-n multilayer element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7513680A JPS571274A (en) 1980-06-04 1980-06-04 Manufacture of comb-shaped p-n multilayer element

Publications (2)

Publication Number Publication Date
JPS571274A true JPS571274A (en) 1982-01-06
JPS6146072B2 JPS6146072B2 (en) 1986-10-11

Family

ID=13567466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7513680A Granted JPS571274A (en) 1980-06-04 1980-06-04 Manufacture of comb-shaped p-n multilayer element

Country Status (1)

Country Link
JP (1) JPS571274A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100485A (en) * 1983-10-06 1985-06-04 エクソン　リサ−チ　アンド　エンジニアリング　カンパニ− Semiconductor device
JPS6265412A (en) * 1985-09-18 1987-03-24 Sharp Corp Molecular beam epitaxial device
JPS6387722A (en) * 1986-09-19 1988-04-19 Yokogawa Hewlett Packard Ltd Manufacture of semiconductor device
JPH03174778A (en) * 1982-10-18 1991-07-29 Energy Conversion Devices Inc Laminar amorphous semiconductor device
JP2009127265A (en) * 2007-11-22 2009-06-11 Panasonic Electric Works Co Ltd Opening vertical frame installing structure of opening and closing fittings
WO2021060098A1 (en) * 2019-09-27 2021-04-01 ソニーセミコンダクタソリューションズ株式会社 Imaging element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03174778A (en) * 1982-10-18 1991-07-29 Energy Conversion Devices Inc Laminar amorphous semiconductor device
JPS60100485A (en) * 1983-10-06 1985-06-04 エクソン　リサ−チ　アンド　エンジニアリング　カンパニ− Semiconductor device
JPS6265412A (en) * 1985-09-18 1987-03-24 Sharp Corp Molecular beam epitaxial device
JPS6387722A (en) * 1986-09-19 1988-04-19 Yokogawa Hewlett Packard Ltd Manufacture of semiconductor device
JP2009127265A (en) * 2007-11-22 2009-06-11 Panasonic Electric Works Co Ltd Opening vertical frame installing structure of opening and closing fittings
WO2021060098A1 (en) * 2019-09-27 2021-04-01 ソニーセミコンダクタソリューションズ株式会社 Imaging element

Also Published As

Publication number Publication date
JPS6146072B2 (en) 1986-10-11

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