JPS57171661A - Method and device for vacuum deposition - Google Patents

Method and device for vacuum deposition

Info

Publication number
JPS57171661A
JPS57171661A JP5737781A JP5737781A JPS57171661A JP S57171661 A JPS57171661 A JP S57171661A JP 5737781 A JP5737781 A JP 5737781A JP 5737781 A JP5737781 A JP 5737781A JP S57171661 A JPS57171661 A JP S57171661A
Authority
JP
Japan
Prior art keywords
cell
gas
outside
acted
clustered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5737781A
Other languages
Japanese (ja)
Inventor
Masatoshi Takao
Hideki Yoshida
Koichi Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5737781A priority Critical patent/JPS57171661A/en
Publication of JPS57171661A publication Critical patent/JPS57171661A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation

Abstract

PURPOSE:To vapor deposit thin films of superior quality easily by clustering the gas to be acted upon the gaseous flow of a vapor deposition material from the outside and flowing the same toward the gaseous flow. CONSTITUTION:The atmos to be vapor deposited scattering from an evaporating source 1 in a vacuum vessel 9 accumulate on a substrate 3. On the other hand, the gas introduced from the outside is clustered in a clustering cell 2, and further the clustered gas is ionized with an electrode 8' for generation of thermoelectrons and is accelerated with an electrode 7' for acceleration, whereby it is acted upon a vapor deposition material. The cell 2 is disposed in an auxiliary gas releasing system 6 so that the clusters arriving at the substrate 3 are controlled by expelling part of the clusters ejecting from the cell 2 to the outside of the system.
JP5737781A 1981-04-15 1981-04-15 Method and device for vacuum deposition Pending JPS57171661A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5737781A JPS57171661A (en) 1981-04-15 1981-04-15 Method and device for vacuum deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5737781A JPS57171661A (en) 1981-04-15 1981-04-15 Method and device for vacuum deposition

Publications (1)

Publication Number Publication Date
JPS57171661A true JPS57171661A (en) 1982-10-22

Family

ID=13053900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5737781A Pending JPS57171661A (en) 1981-04-15 1981-04-15 Method and device for vacuum deposition

Country Status (1)

Country Link
JP (1) JPS57171661A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100669A (en) * 1983-11-02 1985-06-04 Mitsubishi Electric Corp Apparatus for producing thin compound film
JPS60100668A (en) * 1983-11-02 1985-06-04 Mitsubishi Electric Corp Apparatus for producing thin compound film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100669A (en) * 1983-11-02 1985-06-04 Mitsubishi Electric Corp Apparatus for producing thin compound film
JPS60100668A (en) * 1983-11-02 1985-06-04 Mitsubishi Electric Corp Apparatus for producing thin compound film

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