JPS57156031A - Formation of thin film and vacuum deposition device - Google Patents

Formation of thin film and vacuum deposition device

Info

Publication number
JPS57156031A
JPS57156031A JP4097881A JP4097881A JPS57156031A JP S57156031 A JPS57156031 A JP S57156031A JP 4097881 A JP4097881 A JP 4097881A JP 4097881 A JP4097881 A JP 4097881A JP S57156031 A JPS57156031 A JP S57156031A
Authority
JP
Japan
Prior art keywords
thin film
vacuum
substrate
high quality
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4097881A
Other languages
Japanese (ja)
Inventor
Masatoshi Takao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4097881A priority Critical patent/JPS57156031A/en
Publication of JPS57156031A publication Critical patent/JPS57156031A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J15/00—Chemical processes in general for reacting gaseous media with non-particulate solids, e.g. sheet material; Apparatus specially adapted therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To produce thin films of high quality easily by acting gaseous molecular beams upon the flow of vapor deposition particles in forming the thin films by vacuum depositin. CONSTITUTION:This is utilized for production of materials for semiconductor integrated circuits, magnetic recording media, etc., wherein specific gases are introduced into a vacuum vessel and evaporation conditions are controlled to allow evaporating particles to deposit on a substrate, whereby a thin film is formed. Gaseous molecular beams are crossed to the evaporating particle flow directing from a vapor source 1 to the substrate 5. Thereby, the vapor deposition in the gas is made possible without lowering the degree of vacuum in the vacuum vessel too much and therefore the thin film is not adsorbed of unnecessary gases and the film of high quality is obtained.
JP4097881A 1981-03-20 1981-03-20 Formation of thin film and vacuum deposition device Pending JPS57156031A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4097881A JPS57156031A (en) 1981-03-20 1981-03-20 Formation of thin film and vacuum deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4097881A JPS57156031A (en) 1981-03-20 1981-03-20 Formation of thin film and vacuum deposition device

Publications (1)

Publication Number Publication Date
JPS57156031A true JPS57156031A (en) 1982-09-27

Family

ID=12595524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4097881A Pending JPS57156031A (en) 1981-03-20 1981-03-20 Formation of thin film and vacuum deposition device

Country Status (1)

Country Link
JP (1) JPS57156031A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5988820A (en) * 1982-11-15 1984-05-22 Ulvac Corp Compound semiconductor thin film manufacturing device utilizing sheet plasma
JPS6150326A (en) * 1984-08-20 1986-03-12 Fujitsu Ltd Semiconductor crystal growing device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5988820A (en) * 1982-11-15 1984-05-22 Ulvac Corp Compound semiconductor thin film manufacturing device utilizing sheet plasma
JPH023291B2 (en) * 1982-11-15 1990-01-23 Ulvac Corp
JPS6150326A (en) * 1984-08-20 1986-03-12 Fujitsu Ltd Semiconductor crystal growing device
JPH0237692B2 (en) * 1984-08-20 1990-08-27 Fujitsu Ltd

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