JPS57147431A - Plasma gas phase method - Google Patents
Plasma gas phase methodInfo
- Publication number
- JPS57147431A JPS57147431A JP15982481A JP15982481A JPS57147431A JP S57147431 A JPS57147431 A JP S57147431A JP 15982481 A JP15982481 A JP 15982481A JP 15982481 A JP15982481 A JP 15982481A JP S57147431 A JPS57147431 A JP S57147431A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- amorphous
- semi
- coating film
- gas phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Silicon Compounds (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To obtain a semi-amorphous semiconductor, by preparing a silicon semiconductor with an amorphous or semi-amorphous structure from polysilane to form a coating film rapidly at a low temp.
CONSTITUTION: In the plasma gas phase method, when polysilane is introduced into a reaction system kept under reduced pressure below one atm and induction energy is applied thereto, a semiconductor having a coating film based on silicon with an amorphous structure or microcrystalline semi-amorphous structure is formed on a substrate surface. Since this semiconductor has a crystal structure similar to that of a single crystal and is dense, it is excellent and the coating film can be formed rapidly at a low temp.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15982481A JPS57147431A (en) | 1981-10-06 | 1981-10-06 | Plasma gas phase method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15982481A JPS57147431A (en) | 1981-10-06 | 1981-10-06 | Plasma gas phase method |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12032280A Division JPS5745225A (en) | 1980-08-30 | 1980-08-30 | Semiamorphous semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57147431A true JPS57147431A (en) | 1982-09-11 |
JPH021530B2 JPH021530B2 (en) | 1990-01-11 |
Family
ID=15702046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15982481A Granted JPS57147431A (en) | 1981-10-06 | 1981-10-06 | Plasma gas phase method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57147431A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4557943A (en) * | 1983-10-31 | 1985-12-10 | Advanced Semiconductor Materials America, Inc. | Metal-silicide deposition using plasma-enhanced chemical vapor deposition |
-
1981
- 1981-10-06 JP JP15982481A patent/JPS57147431A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4557943A (en) * | 1983-10-31 | 1985-12-10 | Advanced Semiconductor Materials America, Inc. | Metal-silicide deposition using plasma-enhanced chemical vapor deposition |
Also Published As
Publication number | Publication date |
---|---|
JPH021530B2 (en) | 1990-01-11 |
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