JPS57147431A - Plasma gas phase method - Google Patents

Plasma gas phase method

Info

Publication number
JPS57147431A
JPS57147431A JP15982481A JP15982481A JPS57147431A JP S57147431 A JPS57147431 A JP S57147431A JP 15982481 A JP15982481 A JP 15982481A JP 15982481 A JP15982481 A JP 15982481A JP S57147431 A JPS57147431 A JP S57147431A
Authority
JP
Japan
Prior art keywords
semiconductor
amorphous
semi
coating film
gas phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15982481A
Other languages
Japanese (ja)
Other versions
JPH021530B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP15982481A priority Critical patent/JPS57147431A/en
Publication of JPS57147431A publication Critical patent/JPS57147431A/en
Publication of JPH021530B2 publication Critical patent/JPH021530B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Silicon Compounds (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To obtain a semi-amorphous semiconductor, by preparing a silicon semiconductor with an amorphous or semi-amorphous structure from polysilane to form a coating film rapidly at a low temp.
CONSTITUTION: In the plasma gas phase method, when polysilane is introduced into a reaction system kept under reduced pressure below one atm and induction energy is applied thereto, a semiconductor having a coating film based on silicon with an amorphous structure or microcrystalline semi-amorphous structure is formed on a substrate surface. Since this semiconductor has a crystal structure similar to that of a single crystal and is dense, it is excellent and the coating film can be formed rapidly at a low temp.
COPYRIGHT: (C)1982,JPO&Japio
JP15982481A 1981-10-06 1981-10-06 Plasma gas phase method Granted JPS57147431A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15982481A JPS57147431A (en) 1981-10-06 1981-10-06 Plasma gas phase method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15982481A JPS57147431A (en) 1981-10-06 1981-10-06 Plasma gas phase method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12032280A Division JPS5745225A (en) 1980-08-30 1980-08-30 Semiamorphous semiconductor

Publications (2)

Publication Number Publication Date
JPS57147431A true JPS57147431A (en) 1982-09-11
JPH021530B2 JPH021530B2 (en) 1990-01-11

Family

ID=15702046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15982481A Granted JPS57147431A (en) 1981-10-06 1981-10-06 Plasma gas phase method

Country Status (1)

Country Link
JP (1) JPS57147431A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4557943A (en) * 1983-10-31 1985-12-10 Advanced Semiconductor Materials America, Inc. Metal-silicide deposition using plasma-enhanced chemical vapor deposition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4557943A (en) * 1983-10-31 1985-12-10 Advanced Semiconductor Materials America, Inc. Metal-silicide deposition using plasma-enhanced chemical vapor deposition

Also Published As

Publication number Publication date
JPH021530B2 (en) 1990-01-11

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