JPS55111134A - Method of gas plasma etching - Google Patents

Method of gas plasma etching

Info

Publication number
JPS55111134A
JPS55111134A JP1862979A JP1862979A JPS55111134A JP S55111134 A JPS55111134 A JP S55111134A JP 1862979 A JP1862979 A JP 1862979A JP 1862979 A JP1862979 A JP 1862979A JP S55111134 A JPS55111134 A JP S55111134A
Authority
JP
Japan
Prior art keywords
etching
etched
termination point
gas plasma
neighborhood
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1862979A
Other languages
Japanese (ja)
Other versions
JPH0114698B2 (en
Inventor
Yukio Sonobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1862979A priority Critical patent/JPS55111134A/en
Publication of JPS55111134A publication Critical patent/JPS55111134A/en
Publication of JPH0114698B2 publication Critical patent/JPH0114698B2/ja
Granted legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent the excess etching of a thin film prepared on a semiconductor substrate in a gas plasma etching process by a method wherein the etching speed is changed in the neighborhood of the etching termination point.
CONSTITUTION: When a polycrystalline silicon film or a silicon nitride film, etc. on a semiconductor substrate is etched by a gas plasma etching, the etching speed is reduced, e.g., by changing the electric discharging output at a point 4b near by an etching termination point 4c on a material to be etched. At that time, the detection of the etching termination point and its neighborhood is judged from the quantity of a specifc wave length light generated by the plasma chemical reaction, detecting with a photoelectric element. Usually when the etching area of the material to be etched decreases, the etching speed increases and the controlling at the etching termination point becomes difficult. This difficulty can be alleviated by the method described above and the excess etching of the material to be etched can prevented.
COPYRIGHT: (C)1980,JPO&Japio
JP1862979A 1979-02-19 1979-02-19 Method of gas plasma etching Granted JPS55111134A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1862979A JPS55111134A (en) 1979-02-19 1979-02-19 Method of gas plasma etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1862979A JPS55111134A (en) 1979-02-19 1979-02-19 Method of gas plasma etching

Publications (2)

Publication Number Publication Date
JPS55111134A true JPS55111134A (en) 1980-08-27
JPH0114698B2 JPH0114698B2 (en) 1989-03-14

Family

ID=11976901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1862979A Granted JPS55111134A (en) 1979-02-19 1979-02-19 Method of gas plasma etching

Country Status (1)

Country Link
JP (1) JPS55111134A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117241A (en) * 1981-01-13 1982-07-21 Matsushita Electric Ind Co Ltd Reactive ion etching method
JPS59205722A (en) * 1983-05-10 1984-11-21 Toshiba Corp Plasma etching method
JPS59207629A (en) * 1983-05-10 1984-11-24 Toshiba Corp Plasma etching method
JPS6062124A (en) * 1983-09-14 1985-04-10 Toshiba Corp Reactive-ion etching method
JPS63239951A (en) * 1987-03-27 1988-10-05 Sony Corp Etching
JPH0529471A (en) * 1991-07-25 1993-02-05 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH08172081A (en) * 1995-08-28 1996-07-02 Hitachi Ltd Plasma surface treater

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326674A (en) * 1976-08-25 1978-03-11 Hitachi Ltd Plasma etching
JPS5328378A (en) * 1976-08-27 1978-03-16 Handotai Kenkyu Shinkokai Method of plasma etching

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326674A (en) * 1976-08-25 1978-03-11 Hitachi Ltd Plasma etching
JPS5328378A (en) * 1976-08-27 1978-03-16 Handotai Kenkyu Shinkokai Method of plasma etching

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117241A (en) * 1981-01-13 1982-07-21 Matsushita Electric Ind Co Ltd Reactive ion etching method
JPS59205722A (en) * 1983-05-10 1984-11-21 Toshiba Corp Plasma etching method
JPS59207629A (en) * 1983-05-10 1984-11-24 Toshiba Corp Plasma etching method
JPS6062124A (en) * 1983-09-14 1985-04-10 Toshiba Corp Reactive-ion etching method
JPH0465526B2 (en) * 1983-09-14 1992-10-20 Tokyo Shibaura Electric Co
JPS63239951A (en) * 1987-03-27 1988-10-05 Sony Corp Etching
JPH0529471A (en) * 1991-07-25 1993-02-05 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH08172081A (en) * 1995-08-28 1996-07-02 Hitachi Ltd Plasma surface treater

Also Published As

Publication number Publication date
JPH0114698B2 (en) 1989-03-14

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