JPS55111134A - Method of gas plasma etching - Google Patents
Method of gas plasma etchingInfo
- Publication number
- JPS55111134A JPS55111134A JP1862979A JP1862979A JPS55111134A JP S55111134 A JPS55111134 A JP S55111134A JP 1862979 A JP1862979 A JP 1862979A JP 1862979 A JP1862979 A JP 1862979A JP S55111134 A JPS55111134 A JP S55111134A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- etched
- termination point
- gas plasma
- neighborhood
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To prevent the excess etching of a thin film prepared on a semiconductor substrate in a gas plasma etching process by a method wherein the etching speed is changed in the neighborhood of the etching termination point.
CONSTITUTION: When a polycrystalline silicon film or a silicon nitride film, etc. on a semiconductor substrate is etched by a gas plasma etching, the etching speed is reduced, e.g., by changing the electric discharging output at a point 4b near by an etching termination point 4c on a material to be etched. At that time, the detection of the etching termination point and its neighborhood is judged from the quantity of a specifc wave length light generated by the plasma chemical reaction, detecting with a photoelectric element. Usually when the etching area of the material to be etched decreases, the etching speed increases and the controlling at the etching termination point becomes difficult. This difficulty can be alleviated by the method described above and the excess etching of the material to be etched can prevented.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1862979A JPS55111134A (en) | 1979-02-19 | 1979-02-19 | Method of gas plasma etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1862979A JPS55111134A (en) | 1979-02-19 | 1979-02-19 | Method of gas plasma etching |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55111134A true JPS55111134A (en) | 1980-08-27 |
JPH0114698B2 JPH0114698B2 (en) | 1989-03-14 |
Family
ID=11976901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1862979A Granted JPS55111134A (en) | 1979-02-19 | 1979-02-19 | Method of gas plasma etching |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55111134A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57117241A (en) * | 1981-01-13 | 1982-07-21 | Matsushita Electric Ind Co Ltd | Reactive ion etching method |
JPS59205722A (en) * | 1983-05-10 | 1984-11-21 | Toshiba Corp | Plasma etching method |
JPS59207629A (en) * | 1983-05-10 | 1984-11-24 | Toshiba Corp | Plasma etching method |
JPS6062124A (en) * | 1983-09-14 | 1985-04-10 | Toshiba Corp | Reactive-ion etching method |
JPS63239951A (en) * | 1987-03-27 | 1988-10-05 | Sony Corp | Etching |
JPH0529471A (en) * | 1991-07-25 | 1993-02-05 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPH08172081A (en) * | 1995-08-28 | 1996-07-02 | Hitachi Ltd | Plasma surface treater |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5326674A (en) * | 1976-08-25 | 1978-03-11 | Hitachi Ltd | Plasma etching |
JPS5328378A (en) * | 1976-08-27 | 1978-03-16 | Handotai Kenkyu Shinkokai | Method of plasma etching |
-
1979
- 1979-02-19 JP JP1862979A patent/JPS55111134A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5326674A (en) * | 1976-08-25 | 1978-03-11 | Hitachi Ltd | Plasma etching |
JPS5328378A (en) * | 1976-08-27 | 1978-03-16 | Handotai Kenkyu Shinkokai | Method of plasma etching |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57117241A (en) * | 1981-01-13 | 1982-07-21 | Matsushita Electric Ind Co Ltd | Reactive ion etching method |
JPS59205722A (en) * | 1983-05-10 | 1984-11-21 | Toshiba Corp | Plasma etching method |
JPS59207629A (en) * | 1983-05-10 | 1984-11-24 | Toshiba Corp | Plasma etching method |
JPS6062124A (en) * | 1983-09-14 | 1985-04-10 | Toshiba Corp | Reactive-ion etching method |
JPH0465526B2 (en) * | 1983-09-14 | 1992-10-20 | Tokyo Shibaura Electric Co | |
JPS63239951A (en) * | 1987-03-27 | 1988-10-05 | Sony Corp | Etching |
JPH0529471A (en) * | 1991-07-25 | 1993-02-05 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPH08172081A (en) * | 1995-08-28 | 1996-07-02 | Hitachi Ltd | Plasma surface treater |
Also Published As
Publication number | Publication date |
---|---|
JPH0114698B2 (en) | 1989-03-14 |
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