ES2164816T3 - Metodo de fabricacion de un dispositivo fotovoltaico. - Google Patents

Metodo de fabricacion de un dispositivo fotovoltaico.

Info

Publication number
ES2164816T3
ES2164816T3 ES96115386T ES96115386T ES2164816T3 ES 2164816 T3 ES2164816 T3 ES 2164816T3 ES 96115386 T ES96115386 T ES 96115386T ES 96115386 T ES96115386 T ES 96115386T ES 2164816 T3 ES2164816 T3 ES 2164816T3
Authority
ES
Spain
Prior art keywords
coat
substrate temperature
type
reflacting
reflaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES96115386T
Other languages
English (en)
Inventor
Masafumi Sano
Keishi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7247205A external-priority patent/JP3017430B2/ja
Priority claimed from JP7247204A external-priority patent/JP3017429B2/ja
Priority claimed from JP7247197A external-priority patent/JP3017427B2/ja
Priority claimed from JP7247196A external-priority patent/JP3017426B2/ja
Priority claimed from JP7247198A external-priority patent/JP3017428B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2164816T3 publication Critical patent/ES2164816T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System including AIVBIV alloys, e.g. SiGe, SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photovoltaic Devices (AREA)

Abstract

UN METODO PARA PRODUCIR UN DISPOSITIVO FOTOVOLTANICO COMPRENDE UN MIEMBRO BASE (190) QUE COMPRENDE UN SUBSTRATO (100) Y UNA SUPERPOSICION FORMADA SOBRE UNA CAPA REFLACTANTE (101) Y UNA CAPA AUMENTADA DE REFLEXION (102), Y UNA ESTRUCTURA DE CLAVIJA FORMADA DE CAPAS SEMICONDUCTORAS TIPO-N(103), TIPO-I (104) Y TIPO-P(105) QUE CONTIENEN ATOMOS DE SILICIO Y SIENDO UN CRISTAL NO SIMPLE COMO ESTRUCTURA DE CRISTAL, ESTANDO LA ESTRUCTURA DE CLAVIJA REPETIDA EN AL MENOS UNO DE DICHOS MIEMBROS BASE. EL METODO COMPRENDE LAS ETAPAS DE (A) DEPOSITAR UN MATERIAL QUE FORMA LA CAPA REFLACTANTE, A UNA TEMPERATURA DE SUBSTRATO DESDE 200 A 500 C PARA FORMAR LA CAPA RELFACTANTE; (B) BAJAR DESPUES DE LA ETAPA (A) LA TEMPERATURA DEL SUBSTRATO A 100 C O MENOS; Y (C) DEPOSITAR DESPUES DE LA ETAPA (B) UN MATERIAL QUE CONTITUYE LA CAPA QUE AUMENTA LA REFLACCION, EN LA CAPA REFLACTANTE A UNA TEMPERATURA DE SUBSTRATO DESDE 200 A 400 C PARA FORMAR LA CAPA QUE AUMENTA LA REFLACCION.
ES96115386T 1995-09-26 1996-09-25 Metodo de fabricacion de un dispositivo fotovoltaico. Expired - Lifetime ES2164816T3 (es)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP7247205A JP3017430B2 (ja) 1995-09-26 1995-09-26 光起電力素子の形成方法
JP7247204A JP3017429B2 (ja) 1995-09-26 1995-09-26 光起電力素子の形成方法
JP7247197A JP3017427B2 (ja) 1995-09-26 1995-09-26 光起電力素子の形成方法
JP7247196A JP3017426B2 (ja) 1995-09-26 1995-09-26 光起電力素子の形成方法
JP7247198A JP3017428B2 (ja) 1995-09-26 1995-09-26 光起電力素子の形成方法

Publications (1)

Publication Number Publication Date
ES2164816T3 true ES2164816T3 (es) 2002-03-01

Family

ID=27530141

Family Applications (1)

Application Number Title Priority Date Filing Date
ES96115386T Expired - Lifetime ES2164816T3 (es) 1995-09-26 1996-09-25 Metodo de fabricacion de un dispositivo fotovoltaico.

Country Status (6)

Country Link
US (1) US5824566A (es)
EP (1) EP0766321B1 (es)
KR (1) KR100251071B1 (es)
CN (1) CN1194422C (es)
DE (1) DE69617854T2 (es)
ES (1) ES2164816T3 (es)

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US6172296B1 (en) * 1996-05-17 2001-01-09 Canon Kabushiki Kaisha Photovoltaic cell
US6641897B2 (en) 1998-02-13 2003-11-04 The Milwaukee School Of Engineering Three dimensional object
JP4158267B2 (ja) * 1999-03-15 2008-10-01 富士電機ホールディングス株式会社 非単結晶太陽電池
US6461444B1 (en) * 1999-08-20 2002-10-08 Kaneka Corporation Method and apparatus for manufacturing semiconductor device
JP2001068698A (ja) 1999-08-30 2001-03-16 Canon Inc 光起電力素子の形成方法
JP2001189478A (ja) * 1999-12-28 2001-07-10 Sanyo Electric Co Ltd 半導体素子及びその製造方法
JPWO2003009394A1 (ja) * 2001-07-18 2004-11-11 本田技研工業株式会社 透明電極層の成膜方法および装置
US6768053B1 (en) * 2002-01-09 2004-07-27 Nanoset, Llc Optical fiber assembly
WO2004032189A2 (en) 2002-09-30 2004-04-15 Miasolé Manufacturing apparatus and method for large-scale production of thin-film solar cells
WO2007025062A2 (en) * 2005-08-25 2007-03-01 Wakonda Technologies, Inc. Photovoltaic template
WO2007026480A1 (ja) * 2005-08-30 2007-03-08 Kaneka Corporation シリコン系薄膜光電変換装置、及びその製造方法
US7671271B2 (en) * 2006-03-08 2010-03-02 National Science And Technology Dev. Agency Thin film solar cell and its fabrication process
WO2009059128A2 (en) * 2007-11-02 2009-05-07 Wakonda Technologies, Inc. Crystalline-thin-film photovoltaic structures and methods for forming the same
US20100275996A1 (en) * 2007-11-30 2010-11-04 Kaneka Corporation Silicon-based thin-film photoelectric conversion device
WO2009091502A1 (en) * 2008-01-15 2009-07-23 First Solar, Inc. Plasma-treated photovoltaic devices
KR101448448B1 (ko) * 2008-02-20 2014-10-14 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
DE102008050074A1 (de) * 2008-04-30 2009-11-12 Von Ardenne Anlagentechnik Gmbh Verfahren und Anordnung zur Erzeugung von Kontakten auf trägersubstratfreien Photovoltaikelementen
KR100876613B1 (ko) 2008-05-27 2008-12-31 한국철강 주식회사 탄뎀 박막 실리콘 태양전지 및 그 제조방법
US8236603B1 (en) 2008-09-04 2012-08-07 Solexant Corp. Polycrystalline semiconductor layers and methods for forming the same
WO2010037102A2 (en) * 2008-09-29 2010-04-01 Thinsilicon Corporation Monolithically-integrated solar module
WO2010088366A1 (en) 2009-01-28 2010-08-05 Wakonda Technologies, Inc. Large-grain crystalline thin-film structures and devices and methods for forming the same
US20100252602A1 (en) * 2009-04-03 2010-10-07 United Solar Ovonic Llc Continuous processing system with pinch valve
US20100252605A1 (en) * 2009-04-03 2010-10-07 United Solar Ovonic Llc Web support assembly
US20100252606A1 (en) * 2009-04-03 2010-10-07 United Solar Ovonic Llc Roll-to-roll deposition apparatus with improved web transport system
US8061686B2 (en) * 2009-04-03 2011-11-22 Uniter Solar Ovonic LLC Pinch valve
US8134069B2 (en) 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
JP2012522404A (ja) * 2009-06-10 2012-09-20 シンシリコン・コーポレーション 光起電モジュール、及び複数半導体層スタックを有する光起電モジュールを製造する方法
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
KR100989615B1 (ko) * 2009-09-02 2010-10-26 엘지전자 주식회사 태양전지
US20110067998A1 (en) * 2009-09-20 2011-03-24 Miasole Method of making an electrically conductive cadmium sulfide sputtering target for photovoltaic manufacturing
US20110162696A1 (en) * 2010-01-05 2011-07-07 Miasole Photovoltaic materials with controllable zinc and sodium content and method of making thereof
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KR102372744B1 (ko) * 2016-02-18 2022-03-14 한국전자통신연구원 광 검출 소자

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Also Published As

Publication number Publication date
KR100251071B1 (ko) 2000-04-15
EP0766321A1 (en) 1997-04-02
US5824566A (en) 1998-10-20
EP0766321B1 (en) 2001-12-12
CN1194422C (zh) 2005-03-23
KR970018755A (ko) 1997-04-30
CN1154003A (zh) 1997-07-09
DE69617854D1 (de) 2002-01-24
DE69617854T2 (de) 2002-05-16

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