DE69617854D1 - Verfahren zur Herstellung einer photovoltaischen Vorrichtung - Google Patents

Verfahren zur Herstellung einer photovoltaischen Vorrichtung

Info

Publication number
DE69617854D1
DE69617854D1 DE69617854T DE69617854T DE69617854D1 DE 69617854 D1 DE69617854 D1 DE 69617854D1 DE 69617854 T DE69617854 T DE 69617854T DE 69617854 T DE69617854 T DE 69617854T DE 69617854 D1 DE69617854 D1 DE 69617854D1
Authority
DE
Germany
Prior art keywords
manufacturing
photovoltaic device
photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69617854T
Other languages
English (en)
Other versions
DE69617854T2 (de
Inventor
Masafumi Sano
Keishi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7247204A external-priority patent/JP3017429B2/ja
Priority claimed from JP7247205A external-priority patent/JP3017430B2/ja
Priority claimed from JP7247198A external-priority patent/JP3017428B2/ja
Priority claimed from JP7247196A external-priority patent/JP3017426B2/ja
Priority claimed from JP7247197A external-priority patent/JP3017427B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69617854D1 publication Critical patent/DE69617854D1/de
Publication of DE69617854T2 publication Critical patent/DE69617854T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System including AIVBIV alloys, e.g. SiGe, SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE69617854T 1995-09-26 1996-09-25 Verfahren zur Herstellung einer photovoltaischen Vorrichtung Expired - Fee Related DE69617854T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP7247204A JP3017429B2 (ja) 1995-09-26 1995-09-26 光起電力素子の形成方法
JP7247205A JP3017430B2 (ja) 1995-09-26 1995-09-26 光起電力素子の形成方法
JP7247198A JP3017428B2 (ja) 1995-09-26 1995-09-26 光起電力素子の形成方法
JP7247196A JP3017426B2 (ja) 1995-09-26 1995-09-26 光起電力素子の形成方法
JP7247197A JP3017427B2 (ja) 1995-09-26 1995-09-26 光起電力素子の形成方法

Publications (2)

Publication Number Publication Date
DE69617854D1 true DE69617854D1 (de) 2002-01-24
DE69617854T2 DE69617854T2 (de) 2002-05-16

Family

ID=27530141

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69617854T Expired - Fee Related DE69617854T2 (de) 1995-09-26 1996-09-25 Verfahren zur Herstellung einer photovoltaischen Vorrichtung

Country Status (6)

Country Link
US (1) US5824566A (de)
EP (1) EP0766321B1 (de)
KR (1) KR100251071B1 (de)
CN (1) CN1194422C (de)
DE (1) DE69617854T2 (de)
ES (1) ES2164816T3 (de)

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US6172296B1 (en) * 1996-05-17 2001-01-09 Canon Kabushiki Kaisha Photovoltaic cell
US6641897B2 (en) 1998-02-13 2003-11-04 The Milwaukee School Of Engineering Three dimensional object
JP4158267B2 (ja) * 1999-03-15 2008-10-01 富士電機ホールディングス株式会社 非単結晶太陽電池
AU767161B2 (en) * 1999-08-20 2003-10-30 Kaneka Corporation Method and apparatus for manufacturing semiconductor device
JP2001068698A (ja) 1999-08-30 2001-03-16 Canon Inc 光起電力素子の形成方法
JP2001189478A (ja) * 1999-12-28 2001-07-10 Sanyo Electric Co Ltd 半導体素子及びその製造方法
US20050095809A1 (en) * 2001-07-18 2005-05-05 Yuji Nakayama Method of film-forming transparent electrode layer and device therefor
US6768053B1 (en) * 2002-01-09 2004-07-27 Nanoset, Llc Optical fiber assembly
EP1556902A4 (de) * 2002-09-30 2009-07-29 Miasole Herstellungsvorrichtung und verfahren zur produktion von dünnfilmsolarzellen in grossem massstab
WO2007025062A2 (en) * 2005-08-25 2007-03-01 Wakonda Technologies, Inc. Photovoltaic template
KR100976010B1 (ko) * 2005-08-30 2010-08-17 가부시키가이샤 가네카 실리콘계 박막 광전 변환 장치, 및 그의 제조 방법
US7671271B2 (en) * 2006-03-08 2010-03-02 National Science And Technology Dev. Agency Thin film solar cell and its fabrication process
JP2011503847A (ja) * 2007-11-02 2011-01-27 ワコンダ テクノロジーズ， インコーポレイテッド 結晶質薄膜光起電力構造およびその形成方法
EP2216826A4 (de) * 2007-11-30 2016-10-12 Kaneka Corp Photoelektrische siliciumdünnfilm-umwandlungsvorrichtung
MX2010007723A (es) * 2008-01-15 2010-08-09 First Solar Inc Dispositivos fotovoltaicos tratados con plasma.
KR101448448B1 (ko) * 2008-02-20 2014-10-14 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
DE102008050074A1 (de) * 2008-04-30 2009-11-12 Von Ardenne Anlagentechnik Gmbh Verfahren und Anordnung zur Erzeugung von Kontakten auf trägersubstratfreien Photovoltaikelementen
KR100876613B1 (ko) 2008-05-27 2008-12-31 한국철강 주식회사 탄뎀 박막 실리콘 태양전지 및 그 제조방법
US8236603B1 (en) 2008-09-04 2012-08-07 Solexant Corp. Polycrystalline semiconductor layers and methods for forming the same
JP2012504350A (ja) * 2008-09-29 2012-02-16 シンシリコン・コーポレーション 一体的に統合されたソーラーモジュール
WO2010088366A1 (en) 2009-01-28 2010-08-05 Wakonda Technologies, Inc. Large-grain crystalline thin-film structures and devices and methods for forming the same
US20100252606A1 (en) * 2009-04-03 2010-10-07 United Solar Ovonic Llc Roll-to-roll deposition apparatus with improved web transport system
US20100252602A1 (en) * 2009-04-03 2010-10-07 United Solar Ovonic Llc Continuous processing system with pinch valve
US8061686B2 (en) * 2009-04-03 2011-11-22 Uniter Solar Ovonic LLC Pinch valve
US20100252605A1 (en) * 2009-04-03 2010-10-07 United Solar Ovonic Llc Web support assembly
US8134069B2 (en) 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
US20100313942A1 (en) * 2009-06-10 2010-12-16 Thinsilicion Corporation Photovoltaic module and method of manufacturing a photovoltaic module having multiple semiconductor layer stacks
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
KR100989615B1 (ko) * 2009-09-02 2010-10-26 엘지전자 주식회사 태양전지
US20110067998A1 (en) * 2009-09-20 2011-03-24 Miasole Method of making an electrically conductive cadmium sulfide sputtering target for photovoltaic manufacturing
US20110162696A1 (en) * 2010-01-05 2011-07-07 Miasole Photovoltaic materials with controllable zinc and sodium content and method of making thereof
EP2360291A1 (de) * 2010-02-24 2011-08-24 Singulus Technologies AG Verfahren und Vorrichtung zum schnellen Heizen und Kühlen eines Substrates und sofort anschließender Beschichtung desselben unter Vakuum
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KR101135928B1 (ko) 2010-10-21 2012-04-13 포항공과대학교 산학협력단 버퍼층을 이용한 실리콘 기판 위의 산화아연 박막 형성 방법
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Also Published As

Publication number Publication date
KR970018755A (ko) 1997-04-30
EP0766321B1 (de) 2001-12-12
US5824566A (en) 1998-10-20
ES2164816T3 (es) 2002-03-01
CN1194422C (zh) 2005-03-23
DE69617854T2 (de) 2002-05-16
KR100251071B1 (ko) 2000-04-15
EP0766321A1 (de) 1997-04-02
CN1154003A (zh) 1997-07-09

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