DE69423942D1 - Verfahren zur Herstellung einer Vorrichtung unter Verwendung einer Ellipsometrietechnik - Google Patents

Verfahren zur Herstellung einer Vorrichtung unter Verwendung einer Ellipsometrietechnik

Info

Publication number
DE69423942D1
DE69423942D1 DE69423942T DE69423942T DE69423942D1 DE 69423942 D1 DE69423942 D1 DE 69423942D1 DE 69423942 T DE69423942 T DE 69423942T DE 69423942 T DE69423942 T DE 69423942T DE 69423942 D1 DE69423942 D1 DE 69423942D1
Authority
DE
Germany
Prior art keywords
manufacturing
ellipsometric technique
ellipsometric
technique
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69423942T
Other languages
English (en)
Other versions
DE69423942T2 (de
Inventor
Nadine Blayo
Dale Edward Ibbotson
Tseng-Chung Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69423942D1 publication Critical patent/DE69423942D1/de
Application granted granted Critical
Publication of DE69423942T2 publication Critical patent/DE69423942T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis

Landscapes

  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Polarising Elements (AREA)
DE69423942T 1993-11-15 1994-11-02 Verfahren zur Herstellung einer Vorrichtung unter Verwendung einer Ellipsometrietechnik Expired - Fee Related DE69423942T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/152,776 US5494697A (en) 1993-11-15 1993-11-15 Process for fabricating a device using an ellipsometric technique

Publications (2)

Publication Number Publication Date
DE69423942D1 true DE69423942D1 (de) 2000-05-18
DE69423942T2 DE69423942T2 (de) 2001-07-19

Family

ID=22544400

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69423942T Expired - Fee Related DE69423942T2 (de) 1993-11-15 1994-11-02 Verfahren zur Herstellung einer Vorrichtung unter Verwendung einer Ellipsometrietechnik

Country Status (5)

Country Link
US (1) US5494697A (de)
EP (1) EP0653621B1 (de)
JP (1) JPH07183348A (de)
KR (1) KR100358265B1 (de)
DE (1) DE69423942T2 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5877032A (en) * 1995-10-12 1999-03-02 Lucent Technologies Inc. Process for device fabrication in which the plasma etch is controlled by monitoring optical emission
US6059873A (en) 1994-05-30 2000-05-09 Semiconductor Energy Laboratory Co., Ltd. Optical processing method with control of the illumination energy of laser light
US5910021A (en) * 1994-07-04 1999-06-08 Yamaha Corporation Manufacture of semiconductor device with fine pattens
US5552327A (en) * 1994-08-26 1996-09-03 North Carolina State University Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy
US5665214A (en) * 1995-05-03 1997-09-09 Sony Corporation Automatic film deposition control method and system
US5835221A (en) * 1995-10-16 1998-11-10 Lucent Technologies Inc. Process for fabricating a device using polarized light to determine film thickness
US5871805A (en) * 1996-04-08 1999-02-16 Lemelson; Jerome Computer controlled vapor deposition processes
US5702956A (en) * 1996-08-26 1997-12-30 Taiwan Semiconductor Manufactoring, Company Ltd Test site and a method of monitoring via etch depths for semiconductor devices
US5717490A (en) * 1996-10-17 1998-02-10 Lsi Logic Corporation Method for identifying order skipping in spectroreflective film measurement equipment
ES2263184T3 (es) * 1997-01-27 2006-12-01 Peter D. Haaland Metodos para reducir la reflexion en sustratos opticos.
US6172812B1 (en) 1997-01-27 2001-01-09 Peter D. Haaland Anti-reflection coatings and coated articles
US6406641B1 (en) 1997-06-17 2002-06-18 Luxtron Corporation Liquid etch endpoint detection and process metrology
US5900644A (en) * 1997-07-14 1999-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Test site and a method of monitoring via etch depths for semiconductor devices
FR2771850B1 (fr) * 1997-12-02 2001-06-08 France Telecom Procede de fabrication de dispositifs en couches minces utilisant la technique de la reflectance anisotrope
US6483580B1 (en) * 1998-03-06 2002-11-19 Kla-Tencor Technologies Corporation Spectroscopic scatterometer system
US6228277B1 (en) * 1998-10-14 2001-05-08 Lucent Technologies Inc. Etch endpoint detection
US6475815B1 (en) * 1998-12-09 2002-11-05 Matsushita Electric Industrial Co., Ltd. Method of measuring temperature, method of taking samples for temperature measurement and method for fabricating semiconductor device
US6214496B1 (en) * 1999-03-29 2001-04-10 Infineon Technologies North America Corp. Method for reducing corner rounding in mask fabrication utilizing elliptical energy beam
FR2812941B1 (fr) * 2000-08-10 2002-10-11 Air Liquide Procede de controle en temps reel de l'elaboration d'une structure en couches minces par mesure elipsometrique
US6636309B1 (en) * 2001-07-27 2003-10-21 J.A. Woollam Co. Application of spectroscopic ellipsometry to in situ real time fabrication of multiple alternating high/low refractive index narrow bandpass optical filters
US6641746B2 (en) 2001-09-28 2003-11-04 Agere Systems, Inc. Control of semiconductor processing
US6940592B2 (en) * 2001-10-09 2005-09-06 Applied Materials, Inc. Calibration as well as measurement on the same workpiece during fabrication
JP4938219B2 (ja) * 2001-12-19 2012-05-23 ケーエルエー−テンカー コーポレイション 光学分光システムを使用するパラメトリック・プロフィーリング
US7216045B2 (en) * 2002-06-03 2007-05-08 Timbre Technologies, Inc. Selection of wavelengths for integrated circuit optical metrology
US7006222B2 (en) * 2003-01-08 2006-02-28 Kla-Tencor Technologies Corporation Concurrent measurement and cleaning of thin films on silicon-on-insulator (SOI)
DE10319843A1 (de) * 2003-05-03 2004-12-02 Infineon Technologies Ag Verfahren zum Bestimmen der Tiefe einer vergrabenen Struktur
JP2005015885A (ja) * 2003-06-27 2005-01-20 Ebara Corp 基板処理方法及び装置
US7063991B1 (en) 2004-07-28 2006-06-20 Advanced Micro Devices, Inc. Methods of determining characteristics of doped regions on device wafers, and system for accomplishing same
US7515253B2 (en) 2005-01-12 2009-04-07 Kla-Tencor Technologies Corporation System for measuring a sample with a layer containing a periodic diffracting structure
DE102006012022A1 (de) * 2006-03-14 2007-09-20 Betriebsforschungsinstitut VDEh - Institut für angewandte Forschung GmbH Verfahren zur Bestimmung der Auflage auf einem bewegten Metallband
US8709268B2 (en) 2011-11-14 2014-04-29 Spts Technologies Limited Etching apparatus and methods
US9147610B2 (en) 2012-06-22 2015-09-29 Infineon Technologies Ag Monitor structures and methods of formation thereof

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0165364B1 (de) * 1984-06-20 1988-09-07 International Business Machines Corporation Verfahren zum Standardisieren und Stabilisieren von Halbleiterscheiben
US5087591A (en) * 1985-01-22 1992-02-11 Texas Instruments Incorporated Contact etch process
US4874240A (en) * 1988-03-01 1989-10-17 Hoechst Celanese Characterization of semiconductor resist material during processing
US5145554A (en) * 1989-02-23 1992-09-08 Seiko Epson Corporation Method of anisotropic dry etching of thin film semiconductors
US5223914A (en) * 1989-04-28 1993-06-29 International Business Machines Corporation Follow-up system for etch process monitoring
JPH047852A (ja) * 1990-04-25 1992-01-13 Fujitsu Ltd 膜厚測定方法
US5091320A (en) * 1990-06-15 1992-02-25 Bell Communications Research, Inc. Ellipsometric control of material growth
US5131752A (en) * 1990-06-28 1992-07-21 Tamarack Scientific Co., Inc. Method for film thickness endpoint control
US5362356A (en) * 1990-12-20 1994-11-08 Lsi Logic Corporation Plasma etching process control
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5208648A (en) * 1991-03-11 1993-05-04 International Business Machines Corporation Apparatus and a method for high numerical aperture microscopic examination of materials
US5220403A (en) * 1991-03-11 1993-06-15 International Business Machines Corporation Apparatus and a method for high numerical aperture microscopic examination of materials
US5395769A (en) * 1992-06-26 1995-03-07 International Business Machines Corporation Method for controlling silicon etch depth
AU4689293A (en) * 1992-07-15 1994-02-14 On-Line Technologies, Inc. Method and apparatus for monitoring layer processing
US5277747A (en) * 1992-09-15 1994-01-11 Bell Communications Research, Inc. Extraction of spatially varying dielectric function from ellipsometric data
US5354575A (en) * 1993-04-16 1994-10-11 University Of Maryland Ellipsometric approach to anti-reflection coatings of semiconductor laser amplifiers

Also Published As

Publication number Publication date
EP0653621A1 (de) 1995-05-17
JPH07183348A (ja) 1995-07-21
KR950015627A (ko) 1995-06-17
DE69423942T2 (de) 2001-07-19
US5494697A (en) 1996-02-27
EP0653621B1 (de) 2000-04-12
KR100358265B1 (ko) 2003-02-19

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee