DE69637666D1 - Abtastbelichtungsverfahren und Verfahren zur Herstellung einer Vorrichtung unter Verwendung desselben - Google Patents

Abtastbelichtungsverfahren und Verfahren zur Herstellung einer Vorrichtung unter Verwendung desselben

Info

Publication number
DE69637666D1
DE69637666D1 DE69637666T DE69637666T DE69637666D1 DE 69637666 D1 DE69637666 D1 DE 69637666D1 DE 69637666 T DE69637666 T DE 69637666T DE 69637666 T DE69637666 T DE 69637666T DE 69637666 D1 DE69637666 D1 DE 69637666D1
Authority
DE
Germany
Prior art keywords
manufacturing
same
scanning exposure
exposure method
scanning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69637666T
Other languages
English (en)
Inventor
Tsuneo Kanda
Yuichi Yamada
Shigeyuki Uzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69637666D1 publication Critical patent/DE69637666D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69637666T 1995-07-07 1996-07-05 Abtastbelichtungsverfahren und Verfahren zur Herstellung einer Vorrichtung unter Verwendung desselben Expired - Lifetime DE69637666D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17206795A JP3320262B2 (ja) 1995-07-07 1995-07-07 走査露光装置及び方法並びにそれを用いたデバイス製造方法

Publications (1)

Publication Number Publication Date
DE69637666D1 true DE69637666D1 (de) 2008-10-16

Family

ID=15934927

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69637666T Expired - Lifetime DE69637666D1 (de) 1995-07-07 1996-07-05 Abtastbelichtungsverfahren und Verfahren zur Herstellung einer Vorrichtung unter Verwendung desselben

Country Status (5)

Country Link
US (1) US5793471A (de)
EP (1) EP0753796B1 (de)
JP (1) JP3320262B2 (de)
KR (1) KR100215329B1 (de)
DE (1) DE69637666D1 (de)

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DE19537756A1 (de) * 1995-10-10 1997-04-17 Itt Ind Gmbh Deutsche Verfahren zum Optimieren einer Stepfeldanordnung auf einem Halbleiterwafer
JP3728610B2 (ja) * 1996-07-04 2005-12-21 株式会社ニコン 走査型露光装置及び露光方法
US6559465B1 (en) * 1996-08-02 2003-05-06 Canon Kabushiki Kaisha Surface position detecting method having a detection timing determination
KR100525521B1 (ko) * 1996-10-21 2006-01-27 가부시키가이샤 니콘 노광장치및노광방법
CN1244018C (zh) * 1996-11-28 2006-03-01 株式会社尼康 曝光方法和曝光装置
JPH10303126A (ja) 1997-02-28 1998-11-13 Nikon Corp 移動シーケンスの決定方法
EP0862089A3 (de) * 1997-02-28 2000-05-10 Nikon Corporation Verfahren zur Bestimmung eines Bewegungsablaufes und Vorrichtung zur Durchführung desselben
JP3428872B2 (ja) 1997-08-29 2003-07-22 キヤノン株式会社 露光方法および装置
US6057171A (en) 1997-09-25 2000-05-02 Frequency Technology, Inc. Methods for determining on-chip interconnect process parameters
JP2000021702A (ja) 1998-06-30 2000-01-21 Canon Inc 露光装置ならびにデバイス製造方法
JP3488127B2 (ja) * 1999-03-31 2004-01-19 エヌイーシーマシナリー株式会社 微小ワーク片の認識方法及びそれを用いたピックアップ装置
US6559956B2 (en) * 1999-05-27 2003-05-06 Xerox Corporation Butted sensor array with supplemental chip in abutment region
US6294394B1 (en) * 1999-07-01 2001-09-25 Voyan Technology Ramp rate limiter to control stress during ramping
US6278116B1 (en) * 1999-08-09 2001-08-21 United Microelectronics Corp. Method of monitoring deep ultraviolet exposure system
SG103303A1 (en) * 2000-07-07 2004-04-29 Nikon Corp Exposure apparatus, surface position adjustment unit, mask, and device manufacturing method
JP4652667B2 (ja) * 2003-02-13 2011-03-16 キヤノン株式会社 面位置計測方法及び走査型露光装置
JP4351522B2 (ja) * 2003-11-28 2009-10-28 株式会社日立ハイテクノロジーズ パターン欠陥検査装置およびパターン欠陥検査方法
US9529275B2 (en) * 2007-02-21 2016-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography scanner throughput
US8547526B2 (en) * 2009-04-07 2013-10-01 Micron Technology, Inc. Photolithography systems and associated methods of selective die exposure
JP6003272B2 (ja) 2012-06-15 2016-10-05 富士通セミコンダクター株式会社 露光方法および露光装置
JP6399739B2 (ja) * 2013-09-27 2018-10-03 キヤノン株式会社 露光装置、露光方法、およびデバイスの製造方法
US9760027B2 (en) 2013-10-17 2017-09-12 United Microelectronics Corp. Scanner routing method for particle removal

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204127A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Drawing method for pattern of electron-ray drawing device
JPS58107633A (ja) * 1981-12-21 1983-06-27 Canon Inc 特殊チツプを逃げたシヨツト配列方法
JPS59101831A (ja) * 1982-12-01 1984-06-12 Canon Inc 半導体焼付露光装置
JP2610815B2 (ja) * 1985-09-19 1997-05-14 株式会社ニコン 露光方法
JPH01284793A (ja) * 1988-05-11 1989-11-16 Canon Inc 基板支持装置
JPH0652705B2 (ja) * 1988-05-12 1994-07-06 キヤノン株式会社 露光装置
US4924257A (en) * 1988-10-05 1990-05-08 Kantilal Jain Scan and repeat high resolution projection lithography system
US5543921A (en) * 1989-05-08 1996-08-06 Canon Kabushiki Kaisha Aligning method utilizing reliability weighting coefficients
EP0412756B1 (de) * 1989-08-07 1995-10-25 Canon Kabushiki Kaisha Belichtungsvorrichtung
JP2777915B2 (ja) * 1989-08-30 1998-07-23 キヤノン株式会社 位置合わせ機構
JP3043031B2 (ja) * 1990-06-01 2000-05-22 富士通株式会社 露光データ作成方法，パターン露光装置及びパターン露光方法
US5331371A (en) * 1990-09-26 1994-07-19 Canon Kabushiki Kaisha Alignment and exposure method
US5473410A (en) * 1990-11-28 1995-12-05 Nikon Corporation Projection exposure apparatus
JP2577507B2 (ja) * 1990-12-19 1997-02-05 株式会社東芝 ウェーハの描画装置
JP3336649B2 (ja) * 1992-12-25 2002-10-21 株式会社ニコン 露光装置、露光方法、及びその露光方法を含むデバイス製造方法、及びそのデバイス製造方法により製造されたデバイス
JP3002351B2 (ja) * 1993-02-25 2000-01-24 キヤノン株式会社 位置合わせ方法および装置
US5534970A (en) * 1993-06-11 1996-07-09 Nikon Corporation Scanning exposure apparatus
KR100296778B1 (ko) * 1993-06-11 2001-10-24 오노 시게오 노광장치및그장치를사용하는소자제조방법
JP3265504B2 (ja) * 1993-10-12 2002-03-11 株式会社ニコン 露光方法及び装置、並びに半導体素子の製造方法
JP3336389B2 (ja) * 1993-11-22 2002-10-21 株式会社ニコン 露光方法及び装置
US5617182A (en) * 1993-11-22 1997-04-01 Nikon Corporation Scanning exposure method

Also Published As

Publication number Publication date
JP3320262B2 (ja) 2002-09-03
EP0753796B1 (de) 2008-09-03
US5793471A (en) 1998-08-11
JPH0922863A (ja) 1997-01-21
KR970007511A (ko) 1997-02-21
KR100215329B1 (ko) 1999-08-16
EP0753796A1 (de) 1997-01-15

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