DE69631260D1 - Abtastbelichtungsapparat, Belichtungsverfahren unter Verwendung desselben und Verfahren zur Herstellung der Vorrichtung - Google Patents

Abtastbelichtungsapparat, Belichtungsverfahren unter Verwendung desselben und Verfahren zur Herstellung der Vorrichtung

Info

Publication number
DE69631260D1
DE69631260D1 DE69631260T DE69631260T DE69631260D1 DE 69631260 D1 DE69631260 D1 DE 69631260D1 DE 69631260 T DE69631260 T DE 69631260T DE 69631260 T DE69631260 T DE 69631260T DE 69631260 D1 DE69631260 D1 DE 69631260D1
Authority
DE
Germany
Prior art keywords
manufacturing
same
exposure
exposure apparatus
scanning exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69631260T
Other languages
English (en)
Other versions
DE69631260T2 (de
Inventor
Eiichi Murakami
Fumio Sakai
Shigeyuki Uzawa
Shigeki Ogawa
Tetsuya Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP18717195A external-priority patent/JP3507205B2/ja
Priority claimed from JP11354296A external-priority patent/JP3584121B2/ja
Priority claimed from JP17908396A external-priority patent/JP3658091B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69631260D1 publication Critical patent/DE69631260D1/de
Publication of DE69631260T2 publication Critical patent/DE69631260T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE1996631260 1995-07-24 1996-07-23 Abtastbelichtungsapparat, Belichtungsverfahren unter Verwendung desselben und Verfahren zur Herstellung der Vorrichtung Expired - Lifetime DE69631260T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP18717195 1995-07-24
JP18717195A JP3507205B2 (ja) 1995-07-24 1995-07-24 走査型露光装置及び該装置を用いてデバイスを製造する方法
JP11354296 1996-05-08
JP11354296A JP3584121B2 (ja) 1996-05-08 1996-05-08 走査型投影露光装置
JP17908396 1996-07-09
JP17908396A JP3658091B2 (ja) 1996-07-09 1996-07-09 走査型露光方法および該方法を用いたデバイス製造方法

Publications (2)

Publication Number Publication Date
DE69631260D1 true DE69631260D1 (de) 2004-02-05
DE69631260T2 DE69631260T2 (de) 2004-11-18

Family

ID=27312529

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1996631260 Expired - Lifetime DE69631260T2 (de) 1995-07-24 1996-07-23 Abtastbelichtungsapparat, Belichtungsverfahren unter Verwendung desselben und Verfahren zur Herstellung der Vorrichtung
DE69627584T Expired - Lifetime DE69627584T2 (de) 1995-07-24 1996-07-23 Abtastbelichtungsapparat und Belichtungsverfahren unter Verwendung desselben

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69627584T Expired - Lifetime DE69627584T2 (de) 1995-07-24 1996-07-23 Abtastbelichtungsapparat und Belichtungsverfahren unter Verwendung desselben

Country Status (4)

Country Link
US (1) US5751404A (de)
EP (2) EP1115032B1 (de)
KR (1) KR100211011B1 (de)
DE (2) DE69631260T2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5920378A (en) * 1995-03-14 1999-07-06 Nikon Corporation Projection exposure apparatus
JP3437352B2 (ja) 1995-10-02 2003-08-18 キヤノン株式会社 照明光学系及び光源装置
JP3634487B2 (ja) * 1996-02-09 2005-03-30 キヤノン株式会社 位置合せ方法、位置合せ装置、および露光装置
JPH1012544A (ja) * 1996-06-26 1998-01-16 Nikon Corp 位置計測方法及び露光方法
US6559465B1 (en) * 1996-08-02 2003-05-06 Canon Kabushiki Kaisha Surface position detecting method having a detection timing determination
JP3651630B2 (ja) * 1996-08-05 2005-05-25 株式会社ニコン 投影露光方法及び投影露光装置
DE69738910D1 (de) 1996-11-28 2008-09-25 Nikon Corp Ausrichtvorrichtung und belichtungsverfahren
JPH10209039A (ja) 1997-01-27 1998-08-07 Nikon Corp 投影露光方法及び投影露光装置
JP3441930B2 (ja) * 1997-07-22 2003-09-02 キヤノン株式会社 走査型露光装置およびデバイス製造方法
JP3466893B2 (ja) * 1997-11-10 2003-11-17 キヤノン株式会社 位置合わせ装置及びそれを用いた投影露光装置
JP2000003855A (ja) * 1998-06-12 2000-01-07 Canon Inc 露光装置及びそれを用いたデバイスの製造方法
US6320659B1 (en) * 1998-09-22 2001-11-20 Sanei Giken Co., Ltd. Clearance measuring device and method for exposure
JP2001274080A (ja) 2000-03-28 2001-10-05 Canon Inc 走査型投影露光装置及びその位置合わせ方法
JP4579376B2 (ja) * 2000-06-19 2010-11-10 キヤノン株式会社 露光装置およびデバイス製造方法
JP2002353099A (ja) * 2001-05-22 2002-12-06 Canon Inc 位置検出方法及び装置及び露光装置及びデバイス製造方法
JP4803901B2 (ja) * 2001-05-22 2011-10-26 キヤノン株式会社 位置合わせ方法、露光装置、および半導体デバイス製造方法
JP4006217B2 (ja) 2001-10-30 2007-11-14 キヤノン株式会社 露光方法、露光装置及びデバイスの製造方法
TWI240850B (en) * 2001-12-26 2005-10-01 Pentax Corp Projection aligner
JP4054666B2 (ja) * 2002-12-05 2008-02-27 キヤノン株式会社 露光装置
JP4227402B2 (ja) * 2002-12-06 2009-02-18 キヤノン株式会社 走査型露光装置
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
JP2006313866A (ja) * 2005-05-09 2006-11-16 Canon Inc 露光装置及び方法
CN101385122B (zh) * 2006-02-21 2010-12-08 株式会社尼康 图案形成装置、标记检测装置、曝光装置、图案形成方法、曝光方法及组件制造方法
JP2008042036A (ja) * 2006-08-08 2008-02-21 Canon Inc 露光装置及びデバイス製造方法
US7804579B2 (en) * 2007-06-21 2010-09-28 Asml Netherlands B.V. Control system, lithographic projection apparatus, method of controlling a support structure, and a computer program product
US8174671B2 (en) * 2007-06-21 2012-05-08 Asml Netherlands B.V. Lithographic projection apparatus and method for controlling a support structure
TWI377450B (en) * 2008-11-05 2012-11-21 Maxchip Electronics Corp Method of measuring numerical aperture of exposure machine, control wafer, photomask, and method of monitoring numerical aperture of exposure machine
JPWO2012073483A1 (ja) * 2010-11-29 2014-05-19 株式会社ニコン マーク検出方法、露光方法及び露光装置、並びにデバイス製造方法
US20120140193A1 (en) * 2010-12-03 2012-06-07 Nanya Technology Corporation Dynamic wafer alignment method in exposure scanner system
US9857694B2 (en) * 2014-04-28 2018-01-02 Asml Netherlands B.V. Estimating deformation of a patterning device and/or a change in its position
JP6718279B2 (ja) * 2016-03-31 2020-07-08 株式会社オーク製作所 露光装置、ステージ較正システム、およびステージ較正方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4414749A (en) * 1979-07-02 1983-11-15 Optimetrix Corporation Alignment and exposure system with an indicium of an axis of motion of the system
US5168306A (en) * 1989-04-04 1992-12-01 Asahi Kogaku Kogyo Kabushiki Kaisha Exposure apparatus
EP0412756B1 (de) * 1989-08-07 1995-10-25 Canon Kabushiki Kaisha Belichtungsvorrichtung
JP2777915B2 (ja) * 1989-08-30 1998-07-23 キヤノン株式会社 位置合わせ機構
JP2829642B2 (ja) * 1989-09-29 1998-11-25 キヤノン株式会社 露光装置
JP2830492B2 (ja) * 1991-03-06 1998-12-02 株式会社ニコン 投影露光装置及び投影露光方法
JP3109852B2 (ja) * 1991-04-16 2000-11-20 キヤノン株式会社 投影露光装置
US5243195A (en) * 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
JP3002351B2 (ja) * 1993-02-25 2000-01-24 キヤノン株式会社 位置合わせ方法および装置
JP3412704B2 (ja) * 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
US5414514A (en) * 1993-06-01 1995-05-09 Massachusetts Institute Of Technology On-axis interferometric alignment of plates using the spatial phase of interference patterns
JP3420314B2 (ja) * 1993-12-03 2003-06-23 キヤノン株式会社 位置ずれ計測方法及びそれを用いた計測装置
JPH08264427A (ja) * 1995-03-23 1996-10-11 Nikon Corp アライメント方法及びその装置

Also Published As

Publication number Publication date
EP0756206B1 (de) 2003-04-23
US5751404A (en) 1998-05-12
EP1115032B1 (de) 2004-01-02
KR100211011B1 (ko) 1999-07-15
EP1115032A2 (de) 2001-07-11
DE69627584T2 (de) 2004-01-08
DE69627584D1 (de) 2003-05-28
KR970007505A (ko) 1997-02-21
DE69631260T2 (de) 2004-11-18
EP0756206A3 (de) 1997-06-25
EP1115032A3 (de) 2001-07-25
EP0756206A2 (de) 1997-01-29

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Legal Events

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