DE69613432T2 - Belichtungsapparat und Belichtungsverfahren unter Verwendung desselben - Google Patents

Belichtungsapparat und Belichtungsverfahren unter Verwendung desselben

Info

Publication number
DE69613432T2
DE69613432T2 DE69613432T DE69613432T DE69613432T2 DE 69613432 T2 DE69613432 T2 DE 69613432T2 DE 69613432 T DE69613432 T DE 69613432T DE 69613432 T DE69613432 T DE 69613432T DE 69613432 T2 DE69613432 T2 DE 69613432T2
Authority
DE
Germany
Prior art keywords
exposure
same
exposure apparatus
exposure method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69613432T
Other languages
English (en)
Other versions
DE69613432D1 (de
Inventor
Jae-Kwan Song
Jeong-Kon Kim
Kyung-Sung Bae
Kyoung-Shin Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE69613432D1 publication Critical patent/DE69613432D1/de
Application granted granted Critical
Publication of DE69613432T2 publication Critical patent/DE69613432T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69613432T 1995-06-19 1996-03-26 Belichtungsapparat und Belichtungsverfahren unter Verwendung desselben Expired - Lifetime DE69613432T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950016257A KR0155830B1 (ko) 1995-06-19 1995-06-19 변형노광장치 및 노광방법

Publications (2)

Publication Number Publication Date
DE69613432D1 DE69613432D1 (de) 2001-07-26
DE69613432T2 true DE69613432T2 (de) 2002-05-29

Family

ID=19417482

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69613432T Expired - Lifetime DE69613432T2 (de) 1995-06-19 1996-03-26 Belichtungsapparat und Belichtungsverfahren unter Verwendung desselben

Country Status (5)

Country Link
US (1) US5691803A (de)
EP (1) EP0750231B1 (de)
JP (1) JP3887034B2 (de)
KR (1) KR0155830B1 (de)
DE (1) DE69613432T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000250100A (ja) * 1999-03-01 2000-09-14 Mitsutoyo Corp 光学測定機用照明装置
US6361909B1 (en) 1999-12-06 2002-03-26 Industrial Technology Research Institute Illumination aperture filter design using superposition
US6403285B1 (en) * 1999-12-17 2002-06-11 Micron Technology, Inc. Method for exposing semiconductor wafers in a manner that promotes radial processing uniformity
US6261727B1 (en) 1999-12-28 2001-07-17 Taiwan Semiconductor Manufacturing Company DOF for both dense and isolated contact holes
TW544547B (en) * 2001-04-24 2003-08-01 Canon Kk Exposure method and apparatus
JP2002324743A (ja) * 2001-04-24 2002-11-08 Canon Inc 露光方法及び装置
US6875545B2 (en) * 2001-11-28 2005-04-05 Asml Masktools B.V. Method of removing assist features utilized to improve process latitude
KR20170018113A (ko) 2003-04-09 2017-02-15 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
TWI569308B (zh) 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
TWI519819B (zh) 2003-11-20 2016-02-01 尼康股份有限公司 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法
TWI360837B (en) 2004-02-06 2012-03-21 Nikon Corp Polarization changing device, optical illumination
US20050225740A1 (en) * 2004-03-31 2005-10-13 Padlyar Sushil D Light source for photolithography
KR100613461B1 (ko) * 2005-06-29 2006-08-17 주식회사 하이닉스반도체 이중노광기술을 이용한 이중노광방법과 이를 위한포토마스크

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0486316B1 (de) * 1990-11-15 2000-04-19 Nikon Corporation Verfahren und Vorrichtung zur Projektionsbelichtung
US5357311A (en) * 1991-02-25 1994-10-18 Nikon Corporation Projection type light exposure apparatus and light exposure method
US5348837A (en) * 1991-09-24 1994-09-20 Hitachi, Ltd. Projection exposure apparatus and pattern forming method for use therewith
JPH06333803A (ja) * 1992-09-18 1994-12-02 Sharp Corp 投影型露光装置用フィルター
US5552856A (en) * 1993-06-14 1996-09-03 Nikon Corporation Projection exposure apparatus

Also Published As

Publication number Publication date
JPH097937A (ja) 1997-01-10
DE69613432D1 (de) 2001-07-26
EP0750231B1 (de) 2001-06-20
JP3887034B2 (ja) 2007-02-28
KR970002477A (ko) 1997-01-24
US5691803A (en) 1997-11-25
KR0155830B1 (ko) 1998-11-16
EP0750231A1 (de) 1996-12-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition