DE69940765D1 - Ausrichtverfahren und Belichtungsapparat unter Verwendung desselben - Google Patents

Ausrichtverfahren und Belichtungsapparat unter Verwendung desselben

Info

Publication number
DE69940765D1
DE69940765D1 DE69940765T DE69940765T DE69940765D1 DE 69940765 D1 DE69940765 D1 DE 69940765D1 DE 69940765 T DE69940765 T DE 69940765T DE 69940765 T DE69940765 T DE 69940765T DE 69940765 D1 DE69940765 D1 DE 69940765D1
Authority
DE
Germany
Prior art keywords
same
exposure apparatus
alignment method
alignment
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69940765T
Other languages
English (en)
Inventor
Hideki Ina
Minoru Yoshii
Masanobu Hasegawa
Takashi Satoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69940765D1 publication Critical patent/DE69940765D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
    • G03F9/7061—Scanning probe microscopy, e.g. AFM, scanning tunneling microscopy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7092—Signal processing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Signal Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69940765T 1998-12-01 1999-11-30 Ausrichtverfahren und Belichtungsapparat unter Verwendung desselben Expired - Lifetime DE69940765D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP35694098 1998-12-01
JP32805599A JP4846888B2 (ja) 1998-12-01 1999-11-18 位置合わせ方法

Publications (1)

Publication Number Publication Date
DE69940765D1 true DE69940765D1 (de) 2009-06-04

Family

ID=26572742

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69940765T Expired - Lifetime DE69940765D1 (de) 1998-12-01 1999-11-30 Ausrichtverfahren und Belichtungsapparat unter Verwendung desselben

Country Status (4)

Country Link
US (1) US6636311B1 (de)
EP (1) EP1006413B1 (de)
JP (1) JP4846888B2 (de)
DE (1) DE69940765D1 (de)

Families Citing this family (36)

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US6737207B2 (en) * 2000-04-25 2004-05-18 Nikon Corporation Method for evaluating lithography system and method for adjusting substrate-processing apparatus
EP2264522A3 (de) * 2000-07-16 2011-12-14 The Board of Regents of The University of Texas System Verfahren zur Bildung einer Struktur auf einem Substrat
JP3914451B2 (ja) 2001-02-26 2007-05-16 エーエスエムエル ネザーランズ ビー．ブイ． 測定された位置合わせマークの修正位置を決定するためのコンピュータプログラムと、デバイス製造方法と、該製造方法により製造されるデバイス
US20020127865A1 (en) * 2001-03-08 2002-09-12 Motorola, Inc. Lithography method for forming semiconductor devices with sub-micron structures on a wafer and apparatus
JP2002270494A (ja) * 2001-03-13 2002-09-20 Sony Corp 位置検出方法および露光方法
JP2002350128A (ja) 2001-05-30 2002-12-04 Canon Inc 立体形状計測装置並びに立体形状計測方法および位置合わせ方法
JP3953309B2 (ja) * 2001-12-04 2007-08-08 株式会社トプコン 走査電子顕微鏡装置
US6950194B2 (en) * 2001-12-07 2005-09-27 Micronic Laser Systems Ab Alignment sensor
MY164487A (en) * 2002-07-11 2017-12-29 Molecular Imprints Inc Step and repeat imprint lithography processes
US7019819B2 (en) * 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US7027156B2 (en) * 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
AU2003261317A1 (en) * 2002-08-01 2004-02-23 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
JP4080813B2 (ja) * 2002-08-09 2008-04-23 株式会社東芝 マーク設計システム、マーク設計方法、マーク設計プログラムおよびこのマーク設計方法を用いた半導体装置の製造方法
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
TW200500811A (en) * 2002-12-13 2005-01-01 Molecular Imprints Inc Magnification correction employing out-of-plane distortion of a substrate
JPWO2005008753A1 (ja) * 2003-05-23 2006-11-16 株式会社ニコン テンプレート作成方法とその装置、パターン検出方法、位置検出方法とその装置、露光方法とその装置、デバイス製造方法及びテンプレート作成プログラム
US7150622B2 (en) 2003-07-09 2006-12-19 Molecular Imprints, Inc. Systems for magnification and distortion correction for imprint lithography processes
US7112890B2 (en) * 2003-10-30 2006-09-26 Asml Holding N.V. Tunable alignment geometry
JP2005159213A (ja) * 2003-11-28 2005-06-16 Canon Inc シアリング干渉を利用した測定方法及び装置、それを利用した露光方法及び装置、並びに、デバイス製造方法
JP4322722B2 (ja) * 2004-03-29 2009-09-02 エスアイアイ・ナノテクノロジー株式会社 走査型プローブ顕微鏡及び該顕微鏡による測定方法
JP4573873B2 (ja) * 2004-06-03 2010-11-04 ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム マイクロリソグラフィにおけるアラインメントとオーバーレイを改善するシステムおよび方法
US7768624B2 (en) * 2004-06-03 2010-08-03 Board Of Regents, The University Of Texas System Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques
US20050270516A1 (en) * 2004-06-03 2005-12-08 Molecular Imprints, Inc. System for magnification and distortion correction during nano-scale manufacturing
US7785526B2 (en) 2004-07-20 2010-08-31 Molecular Imprints, Inc. Imprint alignment method, system, and template
US7379184B2 (en) * 2004-10-18 2008-05-27 Nanometrics Incorporated Overlay measurement target
US7630067B2 (en) 2004-11-30 2009-12-08 Molecular Imprints, Inc. Interferometric analysis method for the manufacture of nano-scale devices
US20070231421A1 (en) 2006-04-03 2007-10-04 Molecular Imprints, Inc. Enhanced Multi Channel Alignment
US7292326B2 (en) 2004-11-30 2007-11-06 Molecular Imprints, Inc. Interferometric analysis for the manufacture of nano-scale devices
WO2006060758A2 (en) * 2004-12-01 2006-06-08 Molecular Imprints, Inc. Methods of exposure for the purpose of thermal management for imprint lithography processes
US7808643B2 (en) * 2005-02-25 2010-10-05 Nanometrics Incorporated Determining overlay error using an in-chip overlay target
WO2006093722A2 (en) * 2005-02-25 2006-09-08 Accent Optical Technologies, Inc. Methods and systems for determining overlay error based on target image symmetry
WO2007117524A2 (en) 2006-04-03 2007-10-18 Molecular Imprints, Inc. Method of concurrently patterning a substrate having a plurality of fields and alignment marks
KR20090028555A (ko) * 2006-05-31 2009-03-18 캐논 가부시끼가이샤 갭계측방법, 임프린트방법, 및 임프린트장치
JP5027468B2 (ja) * 2006-09-15 2012-09-19 日本ミクロコーティング株式会社 プローブクリーニング用又はプローブ加工用シート、及びプローブ加工方法
US9360778B2 (en) * 2012-03-02 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for lithography patterning
US11409206B2 (en) 2018-04-26 2022-08-09 Asml Netherlands B.V. Alignment method and apparatus

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Publication number Priority date Publication date Assignee Title
JPS6298725A (ja) * 1985-10-25 1987-05-08 Canon Inc 信号検出装置
JPS6332303A (ja) 1986-07-25 1988-02-12 Canon Inc アライメント装置
JP2711107B2 (ja) * 1988-06-27 1998-02-10 三菱電機株式会社 露光方法
JPH02130908A (ja) 1988-11-11 1990-05-18 Canon Inc 観察装置
JPH02152220A (ja) * 1988-12-02 1990-06-12 Canon Inc 位置合せ方法
JP2683075B2 (ja) * 1988-12-23 1997-11-26 キヤノン株式会社 半導体製造装置及び方法
JP2735632B2 (ja) 1989-07-14 1998-04-02 日本電信電話株式会社 露光パタン検出方法、露光パタン位置検出方法およびパタン重ね合わせ露光方法
JPH03270122A (ja) * 1990-03-20 1991-12-02 Fujitsu Ltd ウェーハアライメント方法
JP2897355B2 (ja) * 1990-07-05 1999-05-31 株式会社ニコン アライメント方法，露光装置，並びに位置検出方法及び装置
US5117255A (en) * 1990-09-19 1992-05-26 Nikon Corporation Projection exposure apparatus
JPH04181945A (ja) * 1990-11-16 1992-06-29 Canon Inc 露光装置及びそれを用いた半導体素子の製造方法
JPH04199505A (ja) * 1990-11-29 1992-07-20 Canon Inc 位置合わせ装置
JP2698217B2 (ja) * 1991-01-09 1998-01-19 株式会社日立製作所 半導体ウエハの位置合わせ方法
JP3109852B2 (ja) * 1991-04-16 2000-11-20 キヤノン株式会社 投影露光装置
JP3074579B2 (ja) 1992-01-31 2000-08-07 キヤノン株式会社 位置ずれ補正方法
JPH0743313A (ja) 1993-07-29 1995-02-14 Canon Inc 異物検査装置及びそれを用いた半導体デバイスの 製造方法
JP3351071B2 (ja) * 1993-12-15 2002-11-25 株式会社日立製作所 アライメント方法及び装置
US5469263A (en) * 1994-07-01 1995-11-21 Motorola, Inc. Method for alignment in photolithographic processes
JPH0845814A (ja) * 1994-07-27 1996-02-16 Nikon Corp 露光装置および位置決め方法
US5777744A (en) 1995-05-16 1998-07-07 Canon Kabushiki Kaisha Exposure state detecting system and exposure apparatus using the same
JP3894505B2 (ja) 1995-10-16 2007-03-22 キヤノン株式会社 位置検出方法、位置検出装置、半導体露光装置および半導体製造方法
US5801390A (en) * 1996-02-09 1998-09-01 Nikon Corporation Position-detection method and apparatus with a grating mark

Also Published As

Publication number Publication date
EP1006413B1 (de) 2009-04-22
US6636311B1 (en) 2003-10-21
EP1006413A2 (de) 2000-06-07
JP4846888B2 (ja) 2011-12-28
EP1006413A3 (de) 2005-01-26
JP2000228356A (ja) 2000-08-15

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