DE69800033D1 - Strahlungsempfindliches Resistmaterial und Verfahren zur Herstellung einer Vorrichtung unter Benutzung des strahlungsempfindlichen Resistmaterials - Google Patents

Strahlungsempfindliches Resistmaterial und Verfahren zur Herstellung einer Vorrichtung unter Benutzung des strahlungsempfindlichen Resistmaterials

Info

Publication number
DE69800033D1
DE69800033D1 DE69800033T DE69800033T DE69800033D1 DE 69800033 D1 DE69800033 D1 DE 69800033D1 DE 69800033 T DE69800033 T DE 69800033T DE 69800033 T DE69800033 T DE 69800033T DE 69800033 D1 DE69800033 D1 DE 69800033D1
Authority
DE
Germany
Prior art keywords
resist material
radiation sensitive
sensitive resist
manufacturing
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69800033T
Other languages
English (en)
Other versions
DE69800033T2 (de
Inventor
Edwin Arthur Chandross
Francis Michael Houlihan
Omkaram Nalamasu
Elsa Reichmanis
Thomas Ingolf Wallow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of DE69800033D1 publication Critical patent/DE69800033D1/de
Application granted granted Critical
Publication of DE69800033T2 publication Critical patent/DE69800033T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
DE69800033T 1997-03-07 1998-03-03 Strahlungsempfindliches Resistmaterial und Verfahren zur Herstellung einer Vorrichtung unter Benutzung des strahlungsempfindlichen Resistmaterials Expired - Lifetime DE69800033T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/813,732 US5879857A (en) 1997-02-21 1997-03-07 Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material

Publications (2)

Publication Number Publication Date
DE69800033D1 true DE69800033D1 (de) 1999-12-02
DE69800033T2 DE69800033T2 (de) 2000-07-20

Family

ID=25213230

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69800033T Expired - Lifetime DE69800033T2 (de) 1997-03-07 1998-03-03 Strahlungsempfindliches Resistmaterial und Verfahren zur Herstellung einer Vorrichtung unter Benutzung des strahlungsempfindlichen Resistmaterials

Country Status (5)

Country Link
US (1) US5879857A (de)
EP (1) EP0880074B1 (de)
JP (1) JPH10307401A (de)
KR (1) KR100588369B1 (de)
DE (1) DE69800033T2 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
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US5998099A (en) * 1996-03-08 1999-12-07 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US6103845A (en) * 1996-10-11 2000-08-15 Samsung Electronics Co., Ltd. Chemically amplified resist polymers
US6071670A (en) * 1996-10-11 2000-06-06 Kabushiki Kaisha Toshiba Transparent resin, photosensitive composition, and method of forming a pattern
KR100538968B1 (ko) 1997-02-18 2006-07-11 후지 샤신 필름 가부시기가이샤 포지티브감광성조성물
US6238842B1 (en) * 1998-03-12 2001-05-29 Fuji Photo Film Co., Ltd. Positive photosensitive composition
US6040119A (en) * 1998-03-27 2000-03-21 Industrial Technology Research Institute Elimination of proximity effect in photoresist
JP3711198B2 (ja) * 1998-04-23 2005-10-26 東京応化工業株式会社 レジストパターンの形成方法
EP0955562A1 (de) * 1998-05-07 1999-11-10 Siemens Aktiengesellschaft Chemisch verstärkter Resist
KR100263906B1 (ko) * 1998-06-02 2000-09-01 윤종용 백본이 환상구조를 가지는 감광성 폴리머 및 이를 포함하는 레지스트 조성물
KR100271420B1 (ko) * 1998-09-23 2001-03-02 박찬구 화학증폭형 양성 포토레지스트 조성물
JP4144957B2 (ja) 1999-01-22 2008-09-03 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
KR20000056355A (ko) * 1999-02-19 2000-09-15 김영환 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물
CN1267000A (zh) * 1999-03-11 2000-09-20 国际商业机器公司 环状烯烃聚合物和添加剂的光刻胶组合物
US6124074A (en) * 1999-03-11 2000-09-26 International Business Machines Corporation Photoresist compositions with cyclic olefin polymers and hydrophobic non-steroidal multi-alicyclic additives
SG96547A1 (en) * 1999-03-11 2003-06-16 Ibm Photoresist compositions with cyclic olefin polymers and additive
JP3998901B2 (ja) * 1999-08-31 2007-10-31 東京応化工業株式会社 感光性基材、それを用いたレジストパターンの形成方法およびポジ型レジスト組成物
US6365322B1 (en) 1999-12-07 2002-04-02 Clariant Finance (Bvi) Limited Photoresist composition for deep UV radiation
KR100384810B1 (ko) * 2000-02-16 2003-05-22 금호석유화학 주식회사 저분자 화합물 첨가제를 포함하는 화학증폭형 레지스트조성물
EP1130469A1 (de) * 2000-02-22 2001-09-05 Lucent Technologies Inc. Ein strahlungsempfindliches Resistmaterial und ein Verfahren zur Herstellung von Vorrichtungen unter Benutzung dieses Resistmaterials
US6251560B1 (en) 2000-05-05 2001-06-26 International Business Machines Corporation Photoresist compositions with cyclic olefin polymers having lactone moiety
US6627391B1 (en) 2000-08-16 2003-09-30 International Business Machines Corporation Resist compositions containing lactone additives
JP4117112B2 (ja) * 2001-03-30 2008-07-16 富士フイルム株式会社 ポジ型フォトレジスト組成物
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
US20030235775A1 (en) * 2002-06-13 2003-12-25 Munirathna Padmanaban Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
US6756180B2 (en) * 2002-10-22 2004-06-29 International Business Machines Corporation Cyclic olefin-based resist compositions having improved image stability
US7132218B2 (en) * 2004-03-23 2006-11-07 Sumitomo Chemical Company, Limited Chemically amplified positive resist composition
US7358029B2 (en) * 2005-09-29 2008-04-15 International Business Machines Corporation Low activation energy dissolution modification agents for photoresist applications
US20100136477A1 (en) * 2008-12-01 2010-06-03 Ng Edward W Photosensitive Composition
JP5829940B2 (ja) * 2011-02-25 2015-12-09 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5981196B2 (ja) * 2011-04-07 2016-08-31 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6130631B2 (ja) * 2011-07-19 2017-05-17 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
KR20150063368A (ko) * 2012-09-27 2015-06-09 닛뽄 가야쿠 가부시키가이샤 다가 카르복실산 수지 및 에폭시 수지 조성물
JP6206379B2 (ja) * 2014-11-25 2017-10-04 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP6411967B2 (ja) * 2015-07-29 2018-10-24 信越化学工業株式会社 レジスト材料並びにこれを用いたパターン形成方法

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US4666820A (en) * 1983-04-29 1987-05-19 American Telephone And Telegraph Company, At&T Laboratories Photosensitive element comprising a substrate and an alkaline soluble mixture
US4857435A (en) * 1983-11-01 1989-08-15 Hoechst Celanese Corporation Positive photoresist thermally stable compositions and elements having deep UV response with maleimide copolymer
US5310619A (en) * 1986-06-13 1994-05-10 Microsi, Inc. Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable
JPH0210344A (ja) * 1988-06-29 1990-01-16 Hitachi Ltd 微細パターン形成方法及び像のコントラストの増強方法
US5550004A (en) * 1992-05-06 1996-08-27 Ocg Microelectronic Materials, Inc. Chemically amplified radiation-sensitive composition
JPH06123970A (ja) * 1992-10-12 1994-05-06 Shin Etsu Chem Co Ltd ポジ型レジスト材料
US5580694A (en) * 1994-06-27 1996-12-03 International Business Machines Corporation Photoresist composition with androstane and process for its use
JP2770740B2 (ja) * 1994-07-14 1998-07-02 日本電気株式会社 橋かけ環式アルキル基を有するスルホニウム塩化合物および光酸発生剤
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物

Also Published As

Publication number Publication date
EP0880074A1 (de) 1998-11-25
US5879857A (en) 1999-03-09
KR100588369B1 (ko) 2006-12-07
JPH10307401A (ja) 1998-11-17
DE69800033T2 (de) 2000-07-20
KR19980079960A (ko) 1998-11-25
EP0880074B1 (de) 1999-10-27

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