DE69424725T2 - Verfahren und Vorrichtung zur Herstellung einer Halbleiteranordnung - Google Patents

Verfahren und Vorrichtung zur Herstellung einer Halbleiteranordnung

Info

Publication number
DE69424725T2
DE69424725T2 DE69424725T DE69424725T DE69424725T2 DE 69424725 T2 DE69424725 T2 DE 69424725T2 DE 69424725 T DE69424725 T DE 69424725T DE 69424725 T DE69424725 T DE 69424725T DE 69424725 T2 DE69424725 T2 DE 69424725T2
Authority
DE
Germany
Prior art keywords
producing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69424725T
Other languages
English (en)
Other versions
DE69424725D1 (de
Inventor
Mehrdad M Moslehi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69424725D1 publication Critical patent/DE69424725D1/de
Publication of DE69424725T2 publication Critical patent/DE69424725T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
DE69424725T 1993-08-31 1994-08-25 Verfahren und Vorrichtung zur Herstellung einer Halbleiteranordnung Expired - Lifetime DE69424725T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/114,887 US5525780A (en) 1993-08-31 1993-08-31 Method and apparatus for uniform semiconductor material processing using induction heating with a chuck member

Publications (2)

Publication Number Publication Date
DE69424725D1 DE69424725D1 (de) 2000-07-06
DE69424725T2 true DE69424725T2 (de) 2000-11-23

Family

ID=22358028

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69424725T Expired - Lifetime DE69424725T2 (de) 1993-08-31 1994-08-25 Verfahren und Vorrichtung zur Herstellung einer Halbleiteranordnung

Country Status (5)

Country Link
US (1) US5525780A (de)
EP (1) EP0641017B1 (de)
KR (1) KR100344054B1 (de)
DE (1) DE69424725T2 (de)
TW (1) TW268146B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5796074A (en) * 1995-11-28 1998-08-18 Applied Materials, Inc. Wafer heater assembly
US6210541B1 (en) * 1998-04-28 2001-04-03 International Business Machines Corporation Process and apparatus for cold copper deposition to enhance copper plating fill
JP2002270346A (ja) * 2001-03-09 2002-09-20 Mitsubishi Heavy Ind Ltd 加熱装置及びその製造方法並びに被膜形成装置
DE50210768D1 (de) * 2001-05-21 2007-10-04 Oerlikon Textile Gmbh & Co Kg Galette
US20030233314A1 (en) * 2001-11-14 2003-12-18 Christopher Kokis General montage layout
DE10216786C5 (de) * 2002-04-15 2009-10-15 Ers Electronic Gmbh Verfahren und Vorrichtung zur Konditionierung von Halbleiterwafern und/oder Hybriden
US7323666B2 (en) 2003-12-08 2008-01-29 Saint-Gobain Performance Plastics Corporation Inductively heatable components
US7479621B2 (en) * 2005-12-06 2009-01-20 Praxair Technology, Inc. Magnetic annealing tool heat exchange system and processes
JP4924395B2 (ja) * 2007-12-07 2012-04-25 東京エレクトロン株式会社 処理装置及び処理方法
US8418832B1 (en) 2009-06-05 2013-04-16 Powermag, LLC Permanent magnet fluid heater
WO2014039764A1 (en) * 2012-09-07 2014-03-13 Powermag, LLC Permanent magnet air heater
US10297481B2 (en) * 2013-03-21 2019-05-21 Tokyo Electron Limited Magnetic annealing apparatus
CN108138321B (zh) * 2015-10-06 2020-03-20 株式会社爱发科 混合器、真空处理装置
US11444053B2 (en) 2020-02-25 2022-09-13 Yield Engineering Systems, Inc. Batch processing oven and method
US11688621B2 (en) 2020-12-10 2023-06-27 Yield Engineering Systems, Inc. Batch processing oven and operating methods
CN114675686B (zh) * 2022-03-18 2023-06-13 长江存储科技有限责任公司 用于多腔室的温度控制系统以及温度控制方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3911859A (en) * 1969-03-20 1975-10-14 Daniil Andreevich Dudko Apparatus for building up with deposited metal the seating surfaces of valves
JPS62205619A (ja) * 1986-03-06 1987-09-10 Dainippon Screen Mfg Co Ltd 半導体の加熱方法及びその方法に使用されるサセプタ
US4891335A (en) * 1986-10-15 1990-01-02 Advantage Production Technology Inc. Semiconductor substrate heater and reactor process and apparatus
US4956046A (en) * 1986-10-15 1990-09-11 Advantage Production Technology, Inc. Semiconductor substrate treating method
US4778559A (en) * 1986-10-15 1988-10-18 Advantage Production Technology Semiconductor substrate heater and reactor process and apparatus
JPH06103670B2 (ja) * 1989-04-04 1994-12-14 三菱電機株式会社 半導体ウェハ加熱装置
US5238177A (en) * 1992-08-10 1993-08-24 Flexible Steel Lacing Company Method and apparatus for forming conveyor belt hinge pins
US5350902A (en) * 1993-05-12 1994-09-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Induction heating coupler

Also Published As

Publication number Publication date
KR100344054B1 (ko) 2002-12-02
TW268146B (de) 1996-01-11
KR950006971A (ko) 1995-03-21
DE69424725D1 (de) 2000-07-06
EP0641017A1 (de) 1995-03-01
US5525780A (en) 1996-06-11
EP0641017B1 (de) 2000-05-31

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