TW268146B - - Google Patents

Download PDF

Info

Publication number
TW268146B
TW268146B TW083108549A TW83108549A TW268146B TW 268146 B TW268146 B TW 268146B TW 083108549 A TW083108549 A TW 083108549A TW 83108549 A TW83108549 A TW 83108549A TW 268146 B TW268146 B TW 268146B
Authority
TW
Taiwan
Prior art keywords
chamber
chuck
medium
temperature
item
Prior art date
Application number
TW083108549A
Other languages
English (en)
Chinese (zh)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW268146B publication Critical patent/TW268146B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
TW083108549A 1993-08-31 1994-09-16 TW268146B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/114,887 US5525780A (en) 1993-08-31 1993-08-31 Method and apparatus for uniform semiconductor material processing using induction heating with a chuck member

Publications (1)

Publication Number Publication Date
TW268146B true TW268146B (de) 1996-01-11

Family

ID=22358028

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083108549A TW268146B (de) 1993-08-31 1994-09-16

Country Status (5)

Country Link
US (1) US5525780A (de)
EP (1) EP0641017B1 (de)
KR (1) KR100344054B1 (de)
DE (1) DE69424725T2 (de)
TW (1) TW268146B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5796074A (en) * 1995-11-28 1998-08-18 Applied Materials, Inc. Wafer heater assembly
US6210541B1 (en) * 1998-04-28 2001-04-03 International Business Machines Corporation Process and apparatus for cold copper deposition to enhance copper plating fill
JP2002270346A (ja) * 2001-03-09 2002-09-20 Mitsubishi Heavy Ind Ltd 加熱装置及びその製造方法並びに被膜形成装置
CN100359066C (zh) * 2001-05-21 2008-01-02 苏拉有限及两合公司 导纱辊
US20030233314A1 (en) * 2001-11-14 2003-12-18 Christopher Kokis General montage layout
DE10216786C5 (de) * 2002-04-15 2009-10-15 Ers Electronic Gmbh Verfahren und Vorrichtung zur Konditionierung von Halbleiterwafern und/oder Hybriden
US7323666B2 (en) 2003-12-08 2008-01-29 Saint-Gobain Performance Plastics Corporation Inductively heatable components
US7479621B2 (en) * 2005-12-06 2009-01-20 Praxair Technology, Inc. Magnetic annealing tool heat exchange system and processes
JP4924395B2 (ja) * 2007-12-07 2012-04-25 東京エレクトロン株式会社 処理装置及び処理方法
US8418832B1 (en) 2009-06-05 2013-04-16 Powermag, LLC Permanent magnet fluid heater
WO2014039764A1 (en) * 2012-09-07 2014-03-13 Powermag, LLC Permanent magnet air heater
US10297481B2 (en) * 2013-03-21 2019-05-21 Tokyo Electron Limited Magnetic annealing apparatus
JP6216483B2 (ja) * 2015-10-06 2017-10-18 株式会社アルバック 混合器、真空処理装置
US11444053B2 (en) 2020-02-25 2022-09-13 Yield Engineering Systems, Inc. Batch processing oven and method
US11688621B2 (en) 2020-12-10 2023-06-27 Yield Engineering Systems, Inc. Batch processing oven and operating methods
CN114675686B (zh) * 2022-03-18 2023-06-13 长江存储科技有限责任公司 用于多腔室的温度控制系统以及温度控制方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3911859A (en) * 1969-03-20 1975-10-14 Daniil Andreevich Dudko Apparatus for building up with deposited metal the seating surfaces of valves
JPS62205619A (ja) * 1986-03-06 1987-09-10 Dainippon Screen Mfg Co Ltd 半導体の加熱方法及びその方法に使用されるサセプタ
US4778559A (en) * 1986-10-15 1988-10-18 Advantage Production Technology Semiconductor substrate heater and reactor process and apparatus
US4956046A (en) * 1986-10-15 1990-09-11 Advantage Production Technology, Inc. Semiconductor substrate treating method
US4891335A (en) * 1986-10-15 1990-01-02 Advantage Production Technology Inc. Semiconductor substrate heater and reactor process and apparatus
JPH06103670B2 (ja) * 1989-04-04 1994-12-14 三菱電機株式会社 半導体ウェハ加熱装置
US5238177A (en) * 1992-08-10 1993-08-24 Flexible Steel Lacing Company Method and apparatus for forming conveyor belt hinge pins
US5350902A (en) * 1993-05-12 1994-09-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Induction heating coupler

Also Published As

Publication number Publication date
DE69424725T2 (de) 2000-11-23
KR950006971A (ko) 1995-03-21
DE69424725D1 (de) 2000-07-06
US5525780A (en) 1996-06-11
EP0641017A1 (de) 1995-03-01
EP0641017B1 (de) 2000-05-31
KR100344054B1 (ko) 2002-12-02

Similar Documents

Publication Publication Date Title
TW268146B (de)
TWI274081B (en) Induction heating devices and methods for controllably heating an article
TW417134B (en) Distributed inductively-coupled plasma source
US8674273B2 (en) Heat treatment apparatus
TW484187B (en) Apparatus and method for plasma treatment
TW503440B (en) Apparatus for controlling temperature in a semiconductor processing system
CN108335963A (zh) 等离子体处理装置
JP2010103280A (ja) 熱処理装置
TW584920B (en) Heat treatment device and heat treatment method
JPH02150040A (ja) 気相成長装置
TW201131690A (en) Temperature control system and temperature control method for substrate mounting table
US3551115A (en) Apparatus for growing single crystals
CN109427532A (zh) 具有制冷剂用的流路的部件及其控制方法和基片处理装置
US6616724B2 (en) Method and apparatus for evaporating components of multiple substance mixtures and multiple substance systems
TWI258187B (en) Gas introduction system for controlling temperature of object to be processed
JP4305810B2 (ja) 磁場中熱処理炉及びそれを用いた熱処理方法
JP2002005552A (ja) 寒冷発生装置およびこの寒冷発生装置を利用して冷却する超電導応用機器
JPS63501514A (ja) 大容積均質プラズマ中での化学的処理、特に熱化学的及び化学的沈積処理の方法及び装置
JPH0878428A (ja) 均一な半導体材料処理方法及びその装置
JPH11233840A (ja) クライオスタットおよびその昇温方法
JPH107486A (ja) 磁界印加式単結晶製造装置
JPH0338029A (ja) 気相成長装置
JP3585731B2 (ja) 磁界印加式単結晶製造装置
JP2004517797A (ja) 半導体サブストレート製造用磁場加熱炉およびその使用方法
JPS61286294A (ja) 単結晶引上装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees