DE69703395T2 - Projektionsapparat zur Abtastbelichtung und Verfahren zur Herstellung einer Vorrichtung unter Verwendung desselben - Google Patents

Projektionsapparat zur Abtastbelichtung und Verfahren zur Herstellung einer Vorrichtung unter Verwendung desselben

Info

Publication number
DE69703395T2
DE69703395T2 DE69703395T DE69703395T DE69703395T2 DE 69703395 T2 DE69703395 T2 DE 69703395T2 DE 69703395 T DE69703395 T DE 69703395T DE 69703395 T DE69703395 T DE 69703395T DE 69703395 T2 DE69703395 T2 DE 69703395T2
Authority
DE
Germany
Prior art keywords
manufacturing
same
projection apparatus
scanning exposure
exposure projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69703395T
Other languages
English (en)
Other versions
DE69703395D1 (de
Inventor
Kazuhiko Mishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP02162596A external-priority patent/JP3514401B2/ja
Priority claimed from JP35224296A external-priority patent/JP3495868B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69703395D1 publication Critical patent/DE69703395D1/de
Application granted granted Critical
Publication of DE69703395T2 publication Critical patent/DE69703395T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
DE69703395T 1996-01-16 1997-01-14 Projektionsapparat zur Abtastbelichtung und Verfahren zur Herstellung einer Vorrichtung unter Verwendung desselben Expired - Lifetime DE69703395T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02162596A JP3514401B2 (ja) 1996-01-16 1996-01-16 走査型露光装置および方法ならびに半導体デバイスの製造方法
JP35224296A JP3495868B2 (ja) 1996-12-11 1996-12-11 走査型投影露光装置及びそれを用いたデバイスの製造方法

Publications (2)

Publication Number Publication Date
DE69703395D1 DE69703395D1 (de) 2000-12-07
DE69703395T2 true DE69703395T2 (de) 2001-03-29

Family

ID=26358715

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69703395T Expired - Lifetime DE69703395T2 (de) 1996-01-16 1997-01-14 Projektionsapparat zur Abtastbelichtung und Verfahren zur Herstellung einer Vorrichtung unter Verwendung desselben

Country Status (4)

Country Link
US (2) US6335784B2 (de)
EP (2) EP1001313A1 (de)
KR (1) KR100223228B1 (de)
DE (1) DE69703395T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001119006A (ja) * 1999-10-19 2001-04-27 Sony Corp 撮像デバイス及びその製造方法
JP2002043214A (ja) * 2000-07-26 2002-02-08 Toshiba Corp 走査型露光方法
JP4046961B2 (ja) * 2001-09-03 2008-02-13 キヤノン株式会社 位置検出方法、位置検出装置、露光装置及び露光方法
JP2003092248A (ja) 2001-09-17 2003-03-28 Canon Inc 位置検出装置、位置決め装置及びそれらの方法並びに露光装置及びデバイスの製造方法
JP2005045164A (ja) * 2003-07-25 2005-02-17 Toshiba Corp 自動焦点合わせ装置
US6968288B2 (en) * 2003-08-04 2005-11-22 International Business Machines Corporation Method for detection of photolithographic defocus
JP2005166785A (ja) * 2003-12-01 2005-06-23 Canon Inc 位置検出装置及び方法、並びに、露光装置
US7256866B2 (en) * 2004-10-12 2007-08-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006216865A (ja) * 2005-02-04 2006-08-17 Canon Inc 判別方法及び装置、露光装置、並びにデバイス製造方法
US8577119B2 (en) * 2006-02-24 2013-11-05 Hitachi High-Technologies Corporation Wafer surface observing method and apparatus
JP2009192271A (ja) * 2008-02-12 2009-08-27 Canon Inc 位置検出方法、露光装置、及びデバイス製造方法
JP5147618B2 (ja) * 2008-09-25 2013-02-20 キヤノン株式会社 評価方法及び露光装置
JP5406510B2 (ja) * 2008-11-18 2014-02-05 キヤノン株式会社 走査露光装置およびデバイス製造方法
NL2005414A (en) * 2009-10-28 2011-05-02 Asml Netherlands Bv Lithographic apparatus and patterning device.
NL2007634A (en) 2010-12-13 2012-06-15 Asml Netherlands Bv Lithographic apparatus and method.
US9411223B2 (en) * 2012-09-10 2016-08-09 Globalfoundries Inc. On-product focus offset metrology for use in semiconductor chip manufacturing
US9411249B2 (en) 2013-09-23 2016-08-09 Globalfoundries Inc. Differential dose and focus monitor
JP2014143429A (ja) * 2014-03-07 2014-08-07 Canon Inc 露光装置、露光方法及びデバイス製造方法
CN105527796B (zh) * 2014-09-28 2018-03-13 上海微电子装备（集团）股份有限公司 龙门式设备和控制方法
CN105800919B (zh) * 2014-12-31 2018-06-26 上海微电子装备（集团）股份有限公司 一种激光玻璃封装装置及校准方法
CN106271122B (zh) * 2015-05-29 2019-01-18 上海微电子装备（集团）股份有限公司 一种激光封装设备的垂向控制装置及方法
US9899183B1 (en) * 2016-07-28 2018-02-20 Globalfoundries Inc. Structure and method to measure focus-dependent pattern shift in integrated circuit imaging
CN117337375A (zh) * 2021-07-21 2024-01-02 奥宝科技有限公司 通过透镜的高度测量

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5416562A (en) * 1992-03-06 1995-05-16 Nikon Corporation Method of detecting a position and apparatus therefor
JPH06168867A (ja) * 1992-11-30 1994-06-14 Nikon Corp 露光方法及び露光装置
JP3336649B2 (ja) 1992-12-25 2002-10-21 株式会社ニコン 露光装置、露光方法、及びその露光方法を含むデバイス製造方法、及びそのデバイス製造方法により製造されたデバイス
JP3301153B2 (ja) * 1993-04-06 2002-07-15 株式会社ニコン 投影露光装置、露光方法、及び素子製造方法
JP3211491B2 (ja) * 1993-06-07 2001-09-25 キヤノン株式会社 投影露光装置及びそれを用いた半導体製造方法並びに装置
JP3360401B2 (ja) 1994-03-28 2002-12-24 株式会社ニコン 投影露光装置
JPH07221012A (ja) 1993-12-06 1995-08-18 Nikon Corp 露光装置
KR100363922B1 (ko) 1993-12-06 2003-08-21 가부시키가이샤 니콘 노광장치및노광방법
US6118515A (en) * 1993-12-08 2000-09-12 Nikon Corporation Scanning exposure method
JP3368091B2 (ja) * 1994-04-22 2003-01-20 キヤノン株式会社 投影露光装置及びデバイスの製造方法
US5841520A (en) * 1995-08-09 1998-11-24 Nikon Corporatioin Exposure apparatus and method that use mark patterns to determine image formation characteristics of the apparatus prior to exposure
JP3918200B2 (ja) * 1995-11-16 2007-05-23 株式会社ニコン リソグラフィ装置の製造方法及びリソグラフィ装置

Also Published As

Publication number Publication date
EP1001313A1 (de) 2000-05-17
DE69703395D1 (de) 2000-12-07
EP0785472A2 (de) 1997-07-23
KR100223228B1 (ko) 1999-10-15
KR970059840A (ko) 1997-08-12
US20020048006A1 (en) 2002-04-25
EP0785472B1 (de) 2000-11-02
EP0785472A3 (de) 1998-01-21
US6335784B2 (en) 2002-01-01
US20010012098A1 (en) 2001-08-09

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