DE69523810D1 - Projektionsapparat zur Abtastbelichtung und Verfahren zur Herstellung einer Mikrovorrichtung unter Verwendung desselben - Google Patents

Projektionsapparat zur Abtastbelichtung und Verfahren zur Herstellung einer Mikrovorrichtung unter Verwendung desselben

Info

Publication number
DE69523810D1
DE69523810D1 DE69523810T DE69523810T DE69523810D1 DE 69523810 D1 DE69523810 D1 DE 69523810D1 DE 69523810 T DE69523810 T DE 69523810T DE 69523810 T DE69523810 T DE 69523810T DE 69523810 D1 DE69523810 D1 DE 69523810D1
Authority
DE
Germany
Prior art keywords
manufacturing
same
projection apparatus
scanning exposure
micro device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69523810T
Other languages
English (en)
Other versions
DE69523810T2 (de
Inventor
Yasuyuki Unno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69523810D1 publication Critical patent/DE69523810D1/de
Application granted granted Critical
Publication of DE69523810T2 publication Critical patent/DE69523810T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Light Sources And Details Of Projection-Printing Devices (AREA)
  • Projection-Type Copiers In General (AREA)
DE69523810T 1994-04-22 1995-04-20 Projektionsapparat zur Abtastbelichtung und Verfahren zur Herstellung einer Mikrovorrichtung unter Verwendung desselben Expired - Fee Related DE69523810T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6107867A JP3028028B2 (ja) 1994-04-22 1994-04-22 投影露光装置及びそれを用いた半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
DE69523810D1 true DE69523810D1 (de) 2001-12-20
DE69523810T2 DE69523810T2 (de) 2002-06-13

Family

ID=14470098

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69523810T Expired - Fee Related DE69523810T2 (de) 1994-04-22 1995-04-20 Projektionsapparat zur Abtastbelichtung und Verfahren zur Herstellung einer Mikrovorrichtung unter Verwendung desselben

Country Status (5)

Country Link
US (1) US5706077A (de)
EP (1) EP0681220B1 (de)
JP (1) JP3028028B2 (de)
KR (1) KR0174300B1 (de)
DE (1) DE69523810T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09167735A (ja) * 1995-12-15 1997-06-24 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
US6356340B1 (en) 1998-11-20 2002-03-12 Advanced Micro Devices, Inc. Piezo programmable reticle for EUV lithography
TW473823B (en) * 1999-11-18 2002-01-21 Nippon Kogaku Kk Exposure method as well as exposure apparatus, and method for manufacturing device
WO2009018846A1 (en) * 2007-08-09 2009-02-12 Carl Zeiss Smt Ag Method of structuring a photosensitive material
JP2012524988A (ja) * 2009-04-27 2012-10-18 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置および方法
JP5328512B2 (ja) * 2009-06-24 2013-10-30 富士フイルム株式会社 露光装置
CN102314095B (zh) * 2011-09-05 2013-05-08 中国科学院上海光学精密机械研究所 自适应定心的光刻机投影物镜波像差检测方法
CN112731775B (zh) * 2021-01-06 2023-07-04 华虹半导体(无锡)有限公司 超高深宽比图形的光刻工艺方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4688932A (en) * 1985-02-12 1987-08-25 Canon Kabushiki Kaisha Exposure apparatus
JP2693805B2 (ja) * 1989-02-21 1997-12-24 沖電気工業株式会社 レチクル及びこれを用いたパターン形成方法
US5184176A (en) * 1990-10-08 1993-02-02 Canon Kabushiki Kaisha Projection exposure apparatus with an aberration compensation device of a projection lens
JP2830492B2 (ja) * 1991-03-06 1998-12-02 株式会社ニコン 投影露光装置及び投影露光方法
US5459000A (en) * 1992-10-14 1995-10-17 Canon Kabushiki Kaisha Image projection method and device manufacturing method using the image projection method

Also Published As

Publication number Publication date
EP0681220A1 (de) 1995-11-08
JPH07297117A (ja) 1995-11-10
EP0681220B1 (de) 2001-11-14
US5706077A (en) 1998-01-06
KR0174300B1 (ko) 1999-04-01
KR950030215A (ko) 1995-11-24
JP3028028B2 (ja) 2000-04-04
DE69523810T2 (de) 2002-06-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee