DE69123557D1 - Halbleiteranordnung und ein verfahren zur herstellung einer solchen halbleiteranordnung - Google Patents

Halbleiteranordnung und ein verfahren zur herstellung einer solchen halbleiteranordnung

Info

Publication number
DE69123557D1
DE69123557D1 DE69123557T DE69123557T DE69123557D1 DE 69123557 D1 DE69123557 D1 DE 69123557D1 DE 69123557 T DE69123557 T DE 69123557T DE 69123557 T DE69123557 T DE 69123557T DE 69123557 D1 DE69123557 D1 DE 69123557D1
Authority
DE
Germany
Prior art keywords
semiconductor arrangement
producing
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69123557T
Other languages
English (en)
Other versions
DE69123557T2 (de
Inventor
Koji Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ramtron International Corp
Original Assignee
Ramtron International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ramtron International Corp filed Critical Ramtron International Corp
Application granted granted Critical
Publication of DE69123557D1 publication Critical patent/DE69123557D1/de
Publication of DE69123557T2 publication Critical patent/DE69123557T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
DE69123557T 1990-06-01 1991-05-31 Halbleiteranordnung und ein verfahren zur herstellung einer solchen halbleiteranordnung Expired - Fee Related DE69123557T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02143563A JP3092140B2 (ja) 1990-06-01 1990-06-01 半導体装置の製造方法
PCT/JP1991/000735 WO1991019321A1 (en) 1990-06-01 1991-05-31 Method of manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
DE69123557D1 true DE69123557D1 (de) 1997-01-23
DE69123557T2 DE69123557T2 (de) 1997-06-12

Family

ID=15341657

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69123557T Expired - Fee Related DE69123557T2 (de) 1990-06-01 1991-05-31 Halbleiteranordnung und ein verfahren zur herstellung einer solchen halbleiteranordnung

Country Status (5)

Country Link
US (1) US5229309A (de)
EP (1) EP0487739B1 (de)
JP (1) JP3092140B2 (de)
DE (1) DE69123557T2 (de)
WO (1) WO1991019321A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0516031A1 (de) * 1991-05-29 1992-12-02 Ramtron International Corporation Ferroelektrische Stapelspeicherzelle und Herstellungsverfahren
JP3374216B2 (ja) * 1991-10-26 2003-02-04 ローム株式会社 強誘電体層を有する半導体素子
US5563081A (en) * 1992-03-23 1996-10-08 Rohm Co., Inc. Method for making a nonvolatile memory device utilizing a field effect transistor having a ferroelectric gate film
US5352622A (en) * 1992-04-08 1994-10-04 National Semiconductor Corporation Stacked capacitor with a thin film ceramic oxide layer
EP0784347A2 (de) * 1992-06-18 1997-07-16 Matsushita Electronics Corporation Halbleiterbauelement mit Kondensator
JP3407204B2 (ja) * 1992-07-23 2003-05-19 オリンパス光学工業株式会社 強誘電体集積回路及びその製造方法
US5330931A (en) * 1993-09-22 1994-07-19 Northern Telecom Limited Method of making a capacitor for an integrated circuit
US5443688A (en) * 1993-12-02 1995-08-22 Raytheon Company Method of manufacturing a ferroelectric device using a plasma etching process
US6013950A (en) * 1994-05-19 2000-01-11 Sandia Corporation Semiconductor diode with external field modulation
US5739563A (en) * 1995-03-15 1998-04-14 Kabushiki Kaisha Toshiba Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same
JP3279453B2 (ja) * 1995-03-20 2002-04-30 シャープ株式会社 不揮発性ランダムアクセスメモリ
US5920453A (en) * 1996-08-20 1999-07-06 Ramtron International Corporation Completely encapsulated top electrode of a ferroelectric capacitor
US5702956A (en) * 1996-08-26 1997-12-30 Taiwan Semiconductor Manufactoring, Company Ltd Test site and a method of monitoring via etch depths for semiconductor devices
US5900644A (en) * 1997-07-14 1999-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Test site and a method of monitoring via etch depths for semiconductor devices
US6128211A (en) * 1997-11-06 2000-10-03 National Science Council Structures of a low-voltage-operative non-volatile ferroelectric memory device with floating gate
JPH11330378A (ja) * 1998-05-19 1999-11-30 Murata Mfg Co Ltd 半導体装置
US6242299B1 (en) 1999-04-01 2001-06-05 Ramtron International Corporation Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode
US6956274B2 (en) * 2002-01-11 2005-10-18 Analog Devices, Inc. TiW platinum interconnect and method of making the same
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
US8723654B2 (en) 2010-07-09 2014-05-13 Cypress Semiconductor Corporation Interrupt generation and acknowledgment for RFID
WO2013017131A2 (de) * 2011-07-12 2013-02-07 Helmholtz-Zentrum Dresden - Rossendorf E.V. Integrierte nichtflüchtige speicherelemente, aufbau und verwendung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5024964A (en) * 1970-09-28 1991-06-18 Ramtron Corporation Method of making ferroelectric memory devices
US4149301A (en) * 1977-07-25 1979-04-17 Ferrosil Corporation Monolithic semiconductor integrated circuit-ferroelectric memory drive
US4437139A (en) * 1982-12-17 1984-03-13 International Business Machines Corporation Laser annealed dielectric for dual dielectric capacitor
US5046043A (en) * 1987-10-08 1991-09-03 National Semiconductor Corporation Ferroelectric capacitor and memory cell including barrier and isolation layers
US4888630A (en) * 1988-03-21 1989-12-19 Texas Instruments Incorporated Floating-gate transistor with a non-linear intergate dielectric
JPH01251760A (ja) * 1988-03-31 1989-10-06 Seiko Epson Corp 強誘電体記憶装置
DE3850567T2 (de) * 1988-04-22 1994-11-03 Ramtron Int Corp DRAM-Zelle mit verstärkter Ladung.

Also Published As

Publication number Publication date
JPH0437170A (ja) 1992-02-07
WO1991019321A1 (en) 1991-12-12
EP0487739A1 (de) 1992-06-03
EP0487739A4 (en) 1992-10-21
DE69123557T2 (de) 1997-06-12
US5229309A (en) 1993-07-20
JP3092140B2 (ja) 2000-09-25
EP0487739B1 (de) 1996-12-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee