DE69621385D1 - Verfahren zur herstellung einer halbleiteranordnung mit kristalldefekten - Google Patents

Verfahren zur herstellung einer halbleiteranordnung mit kristalldefekten

Info

Publication number
DE69621385D1
DE69621385D1 DE69621385T DE69621385T DE69621385D1 DE 69621385 D1 DE69621385 D1 DE 69621385D1 DE 69621385 T DE69621385 T DE 69621385T DE 69621385 T DE69621385 T DE 69621385T DE 69621385 D1 DE69621385 D1 DE 69621385D1
Authority
DE
Germany
Prior art keywords
producing
crystal defects
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69621385T
Other languages
English (en)
Other versions
DE69621385T2 (de
Inventor
Ltd Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE69621385D1 publication Critical patent/DE69621385D1/de
Application granted granted Critical
Publication of DE69621385T2 publication Critical patent/DE69621385T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thyristors (AREA)
DE69621385T 1995-02-20 1996-02-19 Verfahren zur herstellung einer halbleiteranordnung mit kristalldefekten Expired - Lifetime DE69621385T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7031148A JP2883017B2 (ja) 1995-02-20 1995-02-20 半導体装置およびその製法
PCT/JP1996/000368 WO1996026536A1 (en) 1995-02-20 1996-02-19 Semiconductor apparatus with crystal defects and process for its fabrication

Publications (2)

Publication Number Publication Date
DE69621385D1 true DE69621385D1 (de) 2002-07-04
DE69621385T2 DE69621385T2 (de) 2002-11-14

Family

ID=12323360

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69621385T Expired - Lifetime DE69621385T2 (de) 1995-02-20 1996-02-19 Verfahren zur herstellung einer halbleiteranordnung mit kristalldefekten

Country Status (7)

Country Link
US (1) US5808352A (de)
EP (1) EP0756757B1 (de)
JP (1) JP2883017B2 (de)
KR (1) KR100394393B1 (de)
CN (1) CN1106686C (de)
DE (1) DE69621385T2 (de)
WO (1) WO1996026536A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3394383B2 (ja) * 1996-03-18 2003-04-07 三菱電機株式会社 サイリスタの製造方法およびサイリスタ
JPH10270451A (ja) * 1997-03-25 1998-10-09 Rohm Co Ltd 半導体装置およびその製造方法
DE19726126A1 (de) * 1997-06-20 1998-12-24 Telefunken Microelectron Bipolarer Schalttransistor mit verringerter Sättigung
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
US6674064B1 (en) 2001-07-18 2004-01-06 University Of Central Florida Method and system for performance improvement of photodetectors and solar cells
JP4872190B2 (ja) * 2004-06-18 2012-02-08 トヨタ自動車株式会社 半導体装置
JP4775539B2 (ja) * 2005-03-22 2011-09-21 サンケン電気株式会社 半導体装置の製法
JP2006344782A (ja) * 2005-06-09 2006-12-21 Matsushita Electric Ind Co Ltd チップ型半導体素子とその製造方法
JP5036327B2 (ja) * 2007-01-23 2012-09-26 三菱電機株式会社 半導体装置及びその製造方法
JP5723595B2 (ja) * 2008-09-01 2015-05-27 ローム株式会社 半導体装置およびその製造方法
JP2010109031A (ja) * 2008-10-29 2010-05-13 Sanken Electric Co Ltd 半導体装置及びその製造方法
CN102422416B (zh) 2009-09-07 2014-05-14 丰田自动车株式会社 具备具有二极管区和igbt区的半导体基板的半导体装置
WO2011074075A1 (ja) * 2009-12-15 2011-06-23 トヨタ自動車株式会社 半導体装置の製造方法
JP5605073B2 (ja) * 2010-08-17 2014-10-15 株式会社デンソー 半導体装置
US8921931B2 (en) 2012-06-04 2014-12-30 Infineon Technologies Austria Ag Semiconductor device with trench structures including a recombination structure and a fill structure
JP6221436B2 (ja) * 2013-07-10 2017-11-01 富士電機株式会社 超接合ｍｏｓｆｅｔとその製造方法およびダイオードを並列接続させた複合半導体装置
JP6183080B2 (ja) 2013-09-09 2017-08-23 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6119593B2 (ja) * 2013-12-17 2017-04-26 トヨタ自動車株式会社 半導体装置
JP6107767B2 (ja) * 2013-12-27 2017-04-05 トヨタ自動車株式会社 半導体装置とその製造方法
DE112015000206T5 (de) 2014-10-03 2016-08-25 Fuji Electric Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
JP6611532B2 (ja) 2015-09-17 2019-11-27 ローム株式会社 半導体装置および半導体装置の製造方法
JP2017168561A (ja) * 2016-03-15 2017-09-21 富士電機株式会社 半導体装置及びその製造方法
CN106920742B (zh) * 2017-01-22 2020-05-08 北京工业大学 一种基于电子辐照控制pn结缺陷能级的方法
US10186586B1 (en) * 2017-09-26 2019-01-22 Sanken Electric Co., Ltd. Semiconductor device and method for forming the semiconductor device
US20210391481A1 (en) * 2018-11-20 2021-12-16 Abb Power Grids Switzerland Ag Power Semiconductor Device and Shadow-Mask Free Method for Producing Such Device
CN116153967B (zh) * 2023-02-09 2023-12-22 上海功成半导体科技有限公司 超结器件及其制作方法和电子器件

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2642206A1 (de) * 1975-12-12 1977-06-23 Ibm Verfahren und aufbau einer halbleitervorrichtung mit genau gesteuerter lebensdauer der ladungstraeger
US4165517A (en) * 1977-02-28 1979-08-21 Electric Power Research Institute, Inc. Self-protection against breakover turn-on failure in thyristors through selective base lifetime control
FR2388413A1 (fr) * 1977-04-18 1978-11-17 Commissariat Energie Atomique Procede de commande de la migration d'une espece chimique dans un substrat solide
JPS5515237A (en) * 1978-07-19 1980-02-02 Toshiba Corp Semiconductor device
JPS57197848A (en) * 1981-05-29 1982-12-04 Toshiba Corp Semiconductor device and manufacture thereof
JPS5817678A (ja) * 1981-07-24 1983-02-01 Toshiba Corp 半導体装置の製造方法
JPS6068621A (ja) * 1983-09-26 1985-04-19 Toshiba Corp 半導体装置の製造方法
US4620211A (en) * 1984-08-13 1986-10-28 General Electric Company Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices
JPS6265364A (ja) * 1985-09-17 1987-03-24 Toshiba Corp 半導体装置の製造方法
JPS62208674A (ja) * 1986-03-08 1987-09-12 Agency Of Ind Science & Technol 半導体装置
JPS62298120A (ja) * 1986-06-18 1987-12-25 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
WO1996026536A1 (en) 1996-08-29
US5808352A (en) 1998-09-15
KR100394393B1 (ko) 2004-02-18
KR970702574A (ko) 1997-05-13
EP0756757B1 (de) 2002-05-29
CN1146826A (zh) 1997-04-02
DE69621385T2 (de) 2002-11-14
EP0756757A1 (de) 1997-02-05
JP2883017B2 (ja) 1999-04-19
JPH08227895A (ja) 1996-09-03
CN1106686C (zh) 2003-04-23

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