DE69512186D1 - Ferroelektrische Dünnschicht, Substrat bedeckt mit einer ferroelektrischen Dünnschicht und Verfahren zur Herstellung einer ferroelektrischen Dünnschicht - Google Patents

Ferroelektrische Dünnschicht, Substrat bedeckt mit einer ferroelektrischen Dünnschicht und Verfahren zur Herstellung einer ferroelektrischen Dünnschicht

Info

Publication number
DE69512186D1
DE69512186D1 DE69512186T DE69512186T DE69512186D1 DE 69512186 D1 DE69512186 D1 DE 69512186D1 DE 69512186 T DE69512186 T DE 69512186T DE 69512186 T DE69512186 T DE 69512186T DE 69512186 D1 DE69512186 D1 DE 69512186D1
Authority
DE
Germany
Prior art keywords
thin film
ferroelectric thin
producing
substrate covered
ferroelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69512186T
Other languages
English (en)
Other versions
DE69512186T2 (de
Inventor
Takeshi Kijima
Sakiko Satoh
Hironori Matsunaga
Masayoshi Koba
Noboru Ohtani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69512186D1 publication Critical patent/DE69512186D1/de
Application granted granted Critical
Publication of DE69512186T2 publication Critical patent/DE69512186T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/252—Glass or ceramic [i.e., fired or glazed clay, cement, etc.] [porcelain, quartz, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/256—Heavy metal or aluminum or compound thereof
DE1995612186 1994-12-06 1995-05-31 Ferroelektrische Dünnschicht, Substrat bedeckt mit einer ferroelektrischen Dünnschicht und Verfahren zur Herstellung einer ferroelektrischen Dünnschicht Expired - Lifetime DE69512186T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30213394A JP3476932B2 (ja) 1994-12-06 1994-12-06 強誘電体薄膜及び強誘電体薄膜被覆基板並びに強誘電体薄膜の製造方法

Publications (2)

Publication Number Publication Date
DE69512186D1 true DE69512186D1 (de) 1999-10-21
DE69512186T2 DE69512186T2 (de) 2000-02-03

Family

ID=17905317

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1995612186 Expired - Lifetime DE69512186T2 (de) 1994-12-06 1995-05-31 Ferroelektrische Dünnschicht, Substrat bedeckt mit einer ferroelektrischen Dünnschicht und Verfahren zur Herstellung einer ferroelektrischen Dünnschicht

Country Status (4)

Country Link
US (1) US5811181A (de)
EP (1) EP0716162B1 (de)
JP (1) JP3476932B2 (de)
DE (1) DE69512186T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3133922B2 (ja) * 1995-06-09 2001-02-13 シャープ株式会社 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子
JP3480624B2 (ja) * 1995-06-09 2003-12-22 シャープ株式会社 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子
JP3891603B2 (ja) * 1995-12-27 2007-03-14 シャープ株式会社 強誘電体薄膜被覆基板、キャパシタ構造素子、及び強誘電体薄膜被覆基板の製造方法
JPH10182291A (ja) * 1996-12-20 1998-07-07 Sharp Corp 強誘電体薄膜の製造方法、強誘電体薄膜被覆基板及びキャパシタ
JPH10313097A (ja) 1997-05-13 1998-11-24 Sharp Corp 強誘電体薄膜、製造方法及び強誘電体薄膜を含んでなる素子
KR100243298B1 (ko) * 1997-09-08 2000-02-01 윤종용 반도체장치의 커패시터 형성방법
WO2000034550A2 (en) * 1998-12-09 2000-06-15 Infineon Technologies Ag Cvd processes using bi aryl
EP1143501A4 (de) * 1998-12-16 2005-02-02 Tokyo Electron Ltd Verfahren zur herstellung einer dünnschicht
US6562678B1 (en) 2000-03-07 2003-05-13 Symetrix Corporation Chemical vapor deposition process for fabricating layered superlattice materials
JP3617411B2 (ja) * 2000-05-18 2005-02-02 株式会社村田製作所 圧電セラミック振動子
JP3515507B2 (ja) * 2000-09-29 2004-04-05 株式会社東芝 トランジスタおよびその製造方法
DE10105997C1 (de) * 2001-02-09 2002-07-25 Infineon Technologies Ag Verfahren zur Herstellung ferroelektrischer Kondensatoren und integrierter Halbleiterspeicherbausteine
US6831313B2 (en) * 2001-05-10 2004-12-14 Symetrix Corporation Ferroelectric composite material, method of making same and memory utilizing same
JP3971598B2 (ja) * 2001-11-01 2007-09-05 富士通株式会社 強誘電体キャパシタおよび半導体装置
JP2003258202A (ja) * 2002-02-28 2003-09-12 Nec Electronics Corp 半導体装置の製造方法
JP3894554B2 (ja) * 2002-08-07 2007-03-22 松下電器産業株式会社 容量素子及びその製造方法
JP4563655B2 (ja) * 2003-04-23 2010-10-13 株式会社日立製作所 半導体装置及びその製造方法
EP1657760A4 (de) * 2003-08-19 2007-10-17 Fuji Electric Holdings Schalteinrichtung
TW200529251A (en) * 2004-02-19 2005-09-01 Hitachi Chemical Co Ltd Thin-film composite material, and wiring board material using the same, wiring board, electronic part material and electronic part, and process for production thereof
WO2006009218A1 (ja) * 2004-07-22 2006-01-26 Nippon Telegraph And Telephone Corporation ２安定抵抗値取得装置及びその製造方法並びに金属酸化物薄膜及びその製造方法
WO2008138127A1 (en) 2007-05-11 2008-11-20 Paratek Microwave, Inc. Systems and methods for a thin film capacitor having a composite high-k thin film stack
KR100858093B1 (ko) * 2007-12-20 2008-09-10 삼성전자주식회사 데이터 저장을 위한 강유전체 박막의 제조방법 및 이를이용한 강유전체 기록매체의 제조방법
JP5507097B2 (ja) * 2008-03-12 2014-05-28 富士フイルム株式会社 ペロブスカイト型酸化物とその製造方法、圧電体、圧電素子、液体吐出装置
JP5857344B2 (ja) * 2010-07-27 2016-02-10 株式会社ユーテック プラズマポーリング装置及び圧電体の製造方法
US10115527B2 (en) 2015-03-09 2018-10-30 Blackberry Limited Thin film dielectric stack
WO2017177376A1 (zh) * 2016-04-12 2017-10-19 复旦大学 大电流读出铁电单晶薄膜存储器及其制备方法和操作方法
US10297658B2 (en) 2016-06-16 2019-05-21 Blackberry Limited Method and apparatus for a thin film dielectric stack

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5423285A (en) * 1991-02-25 1995-06-13 Olympus Optical Co., Ltd. Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications
WO1993012542A1 (en) * 1991-12-13 1993-06-24 Symetrix Corporation Layered superlattice material applications
JP3113141B2 (ja) * 1993-12-28 2000-11-27 シャープ株式会社 強誘電体結晶薄膜被覆基板、その製造方法及び強誘電体結晶薄膜被覆基板を用いた強誘電体薄膜デバイス

Also Published As

Publication number Publication date
EP0716162A1 (de) 1996-06-12
JP3476932B2 (ja) 2003-12-10
US5811181A (en) 1998-09-22
JPH08161933A (ja) 1996-06-21
EP0716162B1 (de) 1999-09-15
DE69512186T2 (de) 2000-02-03

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