DE69633369D1 - Verfahren zur Herstellung einer Dünnschicht, und eine durch das Verfahren hergestellte Dünnschicht - Google Patents

Verfahren zur Herstellung einer Dünnschicht, und eine durch das Verfahren hergestellte Dünnschicht

Info

Publication number
DE69633369D1
DE69633369D1 DE69633369T DE69633369T DE69633369D1 DE 69633369 D1 DE69633369 D1 DE 69633369D1 DE 69633369 T DE69633369 T DE 69633369T DE 69633369 T DE69633369 T DE 69633369T DE 69633369 D1 DE69633369 D1 DE 69633369D1
Authority
DE
Germany
Prior art keywords
thin film
manufacturing
produced
film produced
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69633369T
Other languages
English (en)
Other versions
DE69633369T2 (de
Inventor
Ken Kawamata
Nobuaki Mitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Publication of DE69633369D1 publication Critical patent/DE69633369D1/de
Application granted granted Critical
Publication of DE69633369T2 publication Critical patent/DE69633369T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3421—Cathode assembly for sputtering apparatus, e.g. Target using heated targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69633369T 1995-07-20 1996-07-12 Verfahren zur Herstellung einer Dünnschicht, und eine durch das Verfahren hergestellte Dünnschicht Expired - Lifetime DE69633369T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18445495A JP3808917B2 (ja) 1995-07-20 1995-07-20 薄膜の製造方法及び薄膜
JP18445495 1995-07-20

Publications (2)

Publication Number Publication Date
DE69633369D1 true DE69633369D1 (de) 2004-10-21
DE69633369T2 DE69633369T2 (de) 2005-11-10

Family

ID=16153438

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69633369T Expired - Lifetime DE69633369T2 (de) 1995-07-20 1996-07-12 Verfahren zur Herstellung einer Dünnschicht, und eine durch das Verfahren hergestellte Dünnschicht

Country Status (4)

Country Link
US (4) US5958155A (de)
EP (1) EP0754777B1 (de)
JP (1) JP3808917B2 (de)
DE (1) DE69633369T2 (de)

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JP3808917B2 (ja) * 1995-07-20 2006-08-16 オリンパス株式会社 薄膜の製造方法及び薄膜
US6379492B2 (en) * 1998-10-31 2002-04-30 Applied Materials, Inc. Corrosion resistant coating
WO2001006030A1 (en) * 1999-07-19 2001-01-25 Young Park High throughput thin film deposition for optical disk processing
SG90171A1 (en) * 2000-09-26 2002-07-23 Inst Data Storage Sputtering device
JP4204824B2 (ja) * 2001-09-20 2009-01-07 新明和工業株式会社 光学系
JP2003166047A (ja) * 2001-09-20 2003-06-13 Shin Meiwa Ind Co Ltd ハロゲン化合物の成膜方法及び成膜装置、並びにフッ化マグネシウム膜
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
US6896773B2 (en) * 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
US20040182701A1 (en) * 2003-01-29 2004-09-23 Aashi Glass Company, Limited Sputtering apparatus, a mixed film produced by the sputtering apparatus and a multilayer film including the mixed film
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
US9771648B2 (en) * 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US7095179B2 (en) * 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US9123508B2 (en) * 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
DE102004019741B4 (de) * 2004-04-20 2006-04-27 Centrotherm Photovoltaics Gmbh + Co. Kg Plasmareaktor zur Oberflächenmodifikation von Gegenständen
EP2477207A3 (de) * 2004-09-24 2014-09-03 Zond, Inc. Vorrichtung zum Erzeugen von elektrischen Hochstrom-entladungen
US8236152B2 (en) * 2006-11-24 2012-08-07 Ascentool International Ltd. Deposition system
JP2009007636A (ja) * 2007-06-28 2009-01-15 Sony Corp 低屈折率膜及びその成膜方法、並びに反射防止膜
EP2211973A2 (de) * 2007-10-08 2010-08-04 Renishaw (Ireland) Limited Katheter
JP4562764B2 (ja) * 2007-12-27 2010-10-13 キヤノンアネルバ株式会社 スパッタ装置
CA2739173A1 (en) * 2008-10-08 2010-04-15 Renishaw (Ireland) Limited Catheter
US8093129B2 (en) * 2009-02-03 2012-01-10 Micron Technology, Inc. Methods of forming memory cells
US10995400B2 (en) * 2010-04-16 2021-05-04 Guardian Glass, LLC Method of making coated article having antibacterial and/or antifungal coating and resulting product
DE102010015149A1 (de) * 2010-04-16 2011-10-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zum Beschichten eines Substrates innerhalb einer Vakuumkammer mittels plasmaunterstützter chemischer Dampfabscheidung
CN105334557A (zh) * 2015-11-10 2016-02-17 东莞鑫泰玻璃科技有限公司 一种高反射太阳光反射镜及其制备方法
CN108878177A (zh) * 2018-07-18 2018-11-23 清华大学 高能量密度及高充放电效率的高温电容器薄膜制备方法
CN108962592A (zh) * 2018-07-18 2018-12-07 清华大学 高温下高储能密度和高充放电效率的电容器薄膜制备方法
CN108987112A (zh) * 2018-07-18 2018-12-11 清华大学 基于磁控溅射的高温高电场下低损耗电容器薄膜制备方法
CN108962593A (zh) * 2018-07-18 2018-12-07 清华大学 一种基于磁控溅射的高介电电容器薄膜制备方法
CN116590677A (zh) * 2023-04-17 2023-08-15 哈尔滨工业大学 光学镜头表面高透低粘附的月尘防护涂层及其制备方法

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US3649501A (en) * 1970-06-18 1972-03-14 Ibm Preparation of single crystal films of lithium niobate by radio frequency sputtering
JPS53138060A (en) * 1977-05-06 1978-12-02 Sharp Kk Thin film wiring
JPS6132242A (ja) * 1984-07-24 1986-02-14 Canon Inc 光熱磁気記録媒体
JPS6147645A (ja) * 1984-08-15 1986-03-08 Toshiba Corp 薄膜形成方法
JPS61127862A (ja) * 1984-11-28 1986-06-16 Hitachi Ltd 薄膜形成方法及びその形成装置
US5270854A (en) * 1985-09-17 1993-12-14 Honeywell Inc. Narrow band selective absorption filter
JPH079059B2 (ja) * 1986-01-31 1995-02-01 株式会社明電舍 炭素薄膜の製造方法
JPH0782822B2 (ja) * 1986-12-23 1995-09-06 株式会社東芝 陰極線管
DE3723916A1 (de) 1987-07-18 1989-01-26 Daimler Benz Ag Hydraulische zweikreis-bremsanlage
JPS6432242A (en) 1987-07-29 1989-02-02 Kyocera Corp Longitudinal camera
JPH01127862A (ja) 1987-11-13 1989-05-19 Japan Atom Energy Res Inst 極低温冷凍装置における膨張弁の制御方法
JP2531770B2 (ja) 1988-12-28 1996-09-04 株式会社東芝 光ディスクのオ―トチェンジャ―装置
JPH03138060A (ja) 1989-10-23 1991-06-12 Yaskawa Electric Mfg Co Ltd モールド幅可変制御装置
JPH0482145A (ja) * 1990-07-24 1992-03-16 Toshiba Corp 表示装置
DE69128192T2 (de) * 1990-08-30 1998-05-28 Viratec Thin Films Inc Verfahren zur abscheidung von nioboxid enthaltenden optischen beschichtungen mittels reaktiver gleichstromzerstäubung
US5243255A (en) * 1990-10-24 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Cathode-ray tube with low reflectivity film
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
US5320984A (en) * 1990-12-21 1994-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor film by sputter deposition in a hydrogen atmosphere
JP3079580B2 (ja) * 1990-12-25 2000-08-21 株式会社ニコン 光学部品用薄膜及びこれを有する光学部品及びその製造方法
JP3355654B2 (ja) * 1992-04-06 2002-12-09 松下電器産業株式会社 画像表示装置およびその製造方法
JP3138060B2 (ja) 1992-06-04 2001-02-26 富士通株式会社 半導体集積回路
JPH0643304A (ja) * 1992-07-24 1994-02-18 Nikon Corp 反射防止膜及び反射防止膜付き光学部品
JP3808917B2 (ja) * 1995-07-20 2006-08-16 オリンパス株式会社 薄膜の製造方法及び薄膜
JPH10223160A (ja) * 1997-02-12 1998-08-21 Hitachi Ltd カラー陰極線管

Also Published As

Publication number Publication date
US6358440B1 (en) 2002-03-19
EP0754777A2 (de) 1997-01-22
US6210542B1 (en) 2001-04-03
US5958155A (en) 1999-09-28
US6426022B1 (en) 2002-07-30
JPH0931638A (ja) 1997-02-04
US20020033480A1 (en) 2002-03-21
JP3808917B2 (ja) 2006-08-16
EP0754777B1 (de) 2004-09-15
DE69633369T2 (de) 2005-11-10
EP0754777A3 (de) 1997-05-07

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