TW200529251A - Thin-film composite material, and wiring board material using the same, wiring board, electronic part material and electronic part, and process for production thereof - Google Patents

Abstract

A thin-film composite material with which a capacitor can be formed without need to conduct processing at high temperature; and a wiring board material using the same, wiring board, electronic part material and electronic part; and a process for producing them. There is provided a process for producing a thin-film composite material, comprising the step of forming a metallic thin film layer of at least one metal selected from the group consisting of Cr, Ni, Au, Ag and alloys of these on one major surface of a copper foil; the step of forming a first composite metal oxide thin-film layer consisting of an amorphous composite metal oxide containing Ti and further Ba and/or Sr as constituent elements on the surface of the metallic thin-film layer; and the step of forming a second composite metal oxide thin-film layer comprising at least a crystalline composite metal oxide containing Ti and further Ba and/or Sr as constituent elements on the surface of the first composite metal oxide thin-film layer, characterized in that in the step of forming the first composite metal oxide thin-film layer, heat treatment is carried out at 400 DEG C or below.

Description

200529251 (1) IX. Description of the invention [Technical field to which the invention belongs] The present invention relates to a thin film composite material suitable for electronic parts such as wiring boards and materials for wiring boards, wiring boards, materials for electronic parts, electronic parts, and Its manufacturing method. [Previous Technology] Since the past, electronic devices have expanded and developed new markets by increasing their functions and reducing their size and weight. Also in the wiring board used in this electronic device, according to the requirements for high-density actual installation of various parts mounted on the wiring board, the multilayering of the wiring board is promoted, and it is also known as Japanese Patent Laid-Open No. 200 1-1 60672 The publication describes a multilayer wiring board in which circuit elements (capacitors, inductors, and resistors) are formed on the inner layer. In particular, in order to form a capacitor having a desired static capacitance, there have been proposed more diversified methods than conventional ones. For example, it is described in the aforementioned Japanese Patent Laid-Open No. 2 0 1-1 6 0 6 7 2 The electrodes are formed facing each other to form a capacitor. The method of forming this dielectric is described in Japanese Patent Application Laid-Open No. 200 1 -1 606 72 described above. A dielectric paste is adhered to and sintered on a flexible metal substrate, and an organic layer of an adhesive layer is coated on the sintered paste surface. , The sintered paste surface is attached in a manner of being buried in an adhesive. In addition, as for a method of forming this dielectric, as described in Japanese Patent Application Laid-Open No. 8-24-5263, it is known that an alkoxylated 200529251 (2) compound organic solvent solution of a plurality of specific metals is mixed and coated on a substrate. , Heat treatment to form a composite metal oxide as a dielectric. Further, in the aforementioned Japanese Patent Application Laid-Open No. 2003-526880, it is described that a multi-layer thin film composite including a metal foil substrate and a crystalline dielectric layer, and its production method is described by applying an organic solvent solution of a plurality of metal alkoxy compounds to The substrate is heat-treated to form a crystalline dielectric layer of a plurality of metal oxides. A method of forming a crystalline dielectric layer on a metal substrate by a so-called sol-gel method, sputtering evaporation method, or organometallic chemical vapor deposition method. For such a dielectric, the use of barium titanate and titanium oxide paste is described in the aforementioned Japanese Patent Application Laid-Open No. 2001-160672, and the use of a material selected from the group consisting of Groups IA, IIA, The oxides of metals of Groups IIIA, IVB, and VB and metals selected from Groups IVA and VA of the periodic table are described in Japanese Patent Publication Nos. 2003- 5 2 6 8 8 0 and the use of PZT. Japanese Patent Application Laid-Open No. 1 1 to 2 5 1 1 8 5 describes the use of Pb (lead), Zr (pin), Ti, and Sr. [Summary of the Invention] The method described in Japanese Patent Application Laid-Open No. 2000-1-1620 is a method of sintering a dielectric paste and performing a heat treatment at a high temperature. However, in the case where a copper foil is used for a metal substrate, if heat treatment is performed at a high temperature, there is a problem that copper is oxidized and the conductivity is lowered. In addition, even in the method described in Japanese Patent Application Laid-Open No. 8-24 5 26 3, the necessary sintering temperature is as high as 4 50 ° C or more. When copper is used as a -6-200529251 (3) metal box Due to the oxidation of copper, the insulation property is lowered, and a problem that a capacitor with high reliability and a large static capacitance cannot be obtained. An object of the present invention is to provide a thin film composite material capable of forming a capacitor without being processed at such a high temperature and a material for a wiring board using the same, a wiring board, a material for an electronic part, an electronic part, and a method for manufacturing the same. That is, the present invention provides a thin film composite material, comprising: a copper foil; a metal thin film layer formed on one of the surfaces of the foregoing copper foil, and comprising a member selected from the group consisting of Cr, Ni, Au, Ag, and an alloy thereof One or more metals (Cr and / or Ni and / or Au and / or Ag and / or an alloy thereof) in the group; the first composite metal oxide thin film layer is formed on the surface of the aforementioned metal thin film layer and is composed of containing Elemental Ba and / or Sr, Ti amorphous composite metal oxide composition; and a second composite metal oxide thin film layer formed on the aforementioned first composite metal oxide thin film layer and containing at least B a as a constituent element And / or crystalline metal oxides of S r and T i. The present invention also provides the thin-film composite material, wherein the thickness of the metal thin-film layer is in a range of 50 nm to 1 μm. The present invention also provides the thin-film composite material characterized in that the thickness of the first composite metal oxide thin-film layer is in a range of 10 nm to 200 nm. The present invention also provides the thin-film composite material characterized in that the sum of the thickness of the first composite metal oxide thin film layer and the thickness of the second composite metal oxide thin film layer is in the range of 30 nm to 2 m. In addition, the present invention is characterized in that the second composite metal oxide thin film layer further includes an amorphous composite metal oxide containing the amorphous composite metal oxide and containing Ba and / or Sr, Ti as a constituent element of the structure 200529251 (4). Mentioned thin film composite material. The present invention also provides a wiring board material characterized in that an insulating material layer is formed on the other surface of the copper foil coated with the thin film of the present invention, and a conductor layer is formed on the surface of the second multiple oxide thin film layer. The present invention also provides a wiring board characterized by forming an insulating material layer on the other surface of the copper foil coated with the thin film of the present invention and forming a conductor pattern on the surface of the second multiple oxide thin film layer. The present invention also provides a material for forming a conductor sub-component on the surface of the second composite metal oxide thin film layer of the thin film of the present invention. The present invention also provides an electronic component characterized in that an insulating material layer is formed on the other surface of the copper foil coated with the thin film of the present invention, and a capacitor electrode is formed on the surface of the second multiple oxide thin film layer. The invention further provides a manufacturing method of a thin film composite material, comprising: forming a step of forming at least one metal thin film layer on a surface of a copper foil containing one or more metal films selected from the group consisting of Ni, Au, Ag, and alloys thereof; Forming a first composite metal oxide thin film layer formed by oxidizing an amorphous composite metal containing elemental B a and / or S r, T i on the surface of the aforementioned metal thin film layer; and The step of forming a second metal oxide thin film layer containing at least a crystalline metal oxide containing Ba and / or Sr, Ti as an element is at least 400 ° in the step of forming the first composite gold thin film layer. C. The material of the composite material and the metal composite material and the metal composite material layer of the heat-treated material under C. The method of Cr and the metal of the metal as the structure is described. The first is to constitute the two complex metal oxides. 200529251 (5) In addition, the present invention provides a method for manufacturing the thin film composite material, wherein the thickness of the metal thin film layer is in a range of 50 nm to 1 μm. The present invention also provides a method for manufacturing the thin film composite material, wherein the first composite metal oxide thin film layer has a thickness in the range of 10 nm to 200 nm. In addition, the present invention provides a feature of forming the thin film composite material such that the total thickness of the first composite metal oxide thin film layer and the thickness of the second composite metal oxide thin film layer are in a range of 30 nm to 2 μm. Production method. The present invention also provides the method for manufacturing the thin-film composite material, wherein the second composite metal oxide thin moon layer further includes an amorphous composite metal oxide containing Ba and / or Sr, Ti as constituent elements. According to another aspect of the present invention, the present invention includes: a step of forming an insulating material layer on the other surface of the copper foil of the thin film composite material manufactured by the method for making a gallbladder according to the present invention; A method for manufacturing a wiring board material in a step of a conductor layer. According to another aspect of the present invention, the present invention includes: a step of forming an insulating material layer on the other surface of the copper foil of the thin-film composite material manufactured by the forcing method of the present invention; and forming the second composite metal oxide thin film layer on the surface. A method for manufacturing a wiring board in the step of a conductor pattern. The present invention also provides a method for manufacturing a material for an electronic component, which includes a step of forming a conductor layer on a surface of a second composite metal oxide thin film layer of the thin film composite material manufactured by the manufacturing method of the present invention. The invention also provides a feature including: a step of forming a conductor layer on an oxidized surface of the second composite metal of the thin-film composite material manufactured by the above-mentioned method of the invention-9-200529251 (6) manufacturing method; A step of forming a layer; and a method of manufacturing an electronic part by etching and removing the step of accommodating an electrode that does not require the conductive layer. According to the present invention, it is possible to provide a high-reliability and large-capacitance electrical film composite material capable of being processed at a low temperature of 40 ° C or lower. Moreover, the film composite material of the present invention can provide high reliability. Wiring board and electronic parts of capacitors with large capacitance. This application is based on the Japanese Patent No. 2004-042749 (filed on February 19, 2004) filed earlier by the same applicant. This is for reference. [Embodiment] The embodiment of the present invention will be described in detail below. The film composite material of the present invention is characterized by: having: copper foil; One or more gold-composite metal oxide thin film layers in the group consisting of Ni, AU, Ag, and alloys thereof are formed on the aforementioned thin metal surface, and are formed of non-metals containing Ba and / or Sr and Ti as constituent elements. A composite metal oxide film; and a second composite metal oxide thin film formed on the first composite metal oxide thin film layer and including at least elemental Ba and / or Sr, Ti crystalline metal oxide. Must contain Ba and / or Sr, Ti metal oxides as constituent elements have a particularly high dielectric constant even in ceramics. Cr >genus; the surface layer of the crystal layer of the second film layer, which contains structural composite gold, such as • 10- 200529251 (7)

BaTi03 is about 1500 and SrTi03 is about 200), which is suitable for use as a capacitor material. Of course, a composite metal oxide containing other elements or metal oxides, such as a composite metal oxide in which BaTi03 is added to La (lanthanum) to further increase the dielectric constant, or a composite in which CaTi0 3 is added to BaTi03 to adjust characteristics Metal oxides are also suitable. The first composite metal oxide thin film layer is composed of an amorphous composite metal oxide containing Ba and / or Sr, Ti as constituent elements. Since the interface with the metal thin film layer is amorphous, defects caused by the lattice constant of the metal thin film layer and the lattice constant of the composite metal oxide can be reduced, and insulation can be ensured. In the case where the interface with the metal thin film layer is in a crystalline domain ', since the lattice constant of the metal thin film layer and the lattice constant of the composite metal oxide are not consistent, thermal strain defects caused by heating during the formation of the composite metal oxide thin film layer mostly occur with The interface between the metal thin film layers is significantly reduced in insulation. In addition, in order to be consistent with the lattice constant of the metal thin film layer, the epitaxial crystalline composite metal oxide requires a high-temperature heat treatment, which leads to an inappropriate oxidation of the copper foil. The thickness of the first composite metal oxide thin film layer is preferably in a range of 10 nm to 200 nm, and more preferably in a range of 20 nm to 50 nm. The thickness of the first composite metal oxide thin film layer is less than 1 Oum, that is, there may be a risk that the effect of the capacitor is reduced by providing the first composite metal oxide thin film layer. If the thickness exceeds 200 nm, the amorphous composite metal may be oxidized. The dielectric constant of a substance is generally lower than that of a composite metal oxide composed of a crystalline domain and an amorphous domain, so there is a possibility that the static capacitance of a capacitor becomes smaller. The second composite metal oxide thin film layer contains at least a crystalline metal oxide containing B a and / or S r and T i as a constituent element, and preferably contains a constituent metal element as a constituent element. The amorphous metal oxide of B a and / or S r and T i and the crystalline metal oxide containing Ba and / or Sr and Ti as constituent elements include both a crystalline field and an amorphous field. In the case of all crystalline fields, it is necessary to form a composite metal oxide film layer at a high temperature of, for example, 600 ° C or higher, which oxidizes copper foil easily, and it is difficult to obtain a capacitor with high insulation. Since the dielectric constant of the composite metal oxide is low in the case of all amorphous regions, it is difficult to obtain a capacitor having a large static capacitance. Since the formation of the composite metal oxide thin film layer formed in the crystalline domain and the amorphous domain is performed at a relatively low temperature, the oxidation of the copper foil can be suppressed, and at the same time, a thin film having a high dielectric constant can be obtained. The crystalline and amorphous areas of the composite metal oxide thin film layer can be identified by observation with a dark field image using a transmission electron microscope (TEM). The second composite metal oxide thin film layer may have a laminated structure including the composite metal oxide thin film layer composed of the crystal domain and the amorphous domain and the composite metal oxide thin film layer composed entirely of the amorphous domain. The thickness of the second composite metal oxide thin film layer and the first composite metal oxide thin film layer is preferably in a range of 30 nm to 2 μm, more preferably in a range of 50 nm to 1.5 μm, and more preferably in a range of 100 nm to 1 μm. When the thickness of the second composite metal oxide thin film layer is less than 3 Onm, the electric field strength of the composite metal oxide thin film layer is low, and the applicable application of the capacitor may be limited. If the thickness exceeds 2 μηι, the large The risk of electrostatic capacitors. The above metal thin film layer contains one or more metals selected from the group consisting of Cr, Ni, Au, Ag and its alloys-12-200529251 (9). From the viewpoint of cost, it is preferable to use Cr and / or Ni. From the viewpoint of environmental pollution, Ni is preferred. Since Cr and Ni form a stable oxide film, and because Alm and Ag are difficult to oxidize, the oxidation of the copper foil during the formation of the composite metal oxide film layer is suppressed, which helps to ensure the insulation of the capacitor. In addition, metals such as Pt (lead), Ti, and Pd (palladium), which are mostly used in Si02 substrates to suppress oxidation, are easily formed on the copper foil when the present invention is formed on a copper foil, which is difficult to obtain reliability High-capacity capacitor. The alloy preferably contains at least one or more components selected from the group consisting of Cr, Ni, Au, and Ag in the alloy in an amount of 80% by weight or more. Examples of such alloys include Ni—P (phosphorus) alloy, Ni—B (boron) alloy, Ni—P – B alloy, Ni—Co (ming) alloy, Ni—Cr alloy, Ni—Cr—A1 alloy, Ni—Cr—Si alloy, Ag—Nd (钹) alloy. When the content rate of at least one or plural components selected from the group consisting of Cr, Ni, Au, and Ag is less than 80% by weight, there is a possibility that the effect of ensuring the insulation of the capacitor is reduced. In terms of cost and ease of formation, Ni-P alloy is preferred. The thickness of the metal thin film layer is preferably in a range of 50 nm to 1 μm, and more preferably in a range of 100 nm to 80 nm. When the thickness is less than 50 nm, the insulation property tends to decrease. If the thickness exceeds 1 μm, it is generally disadvantageous in terms of cost. The thickness of the metal thin film layer is controlled by a focused ion beam processing device (FIB), and can be measured by observing with a scanning ion microscope (SIM) and measuring the length of the obtained cross section. The method for forming the composite metal oxide thin film layer has nothing to do with the second layer and the first layer -13- 200529251 do) ′. For example, a sol-gel method, a sputtering evaporation method, and an organometallic chemical vapor deposition method (CVD) can be applied. The sol-gel method is preferable in that the composite metal oxide can be easily adjusted to a desired composition. In order to suppress the oxidation of the copper foil during the formation of the composite metal oxide film layer, the formation temperature is preferably below 400 ° C, and more preferably below 350 ° C. Although the method for forming a thin metal layer on a copper substrate is not particularly limited, for example, a plating method, a vapor deposition method, a sputtering method, or the like can be applied. The copper foil is not particularly limited as long as it is generally used. For example, those who are treated with Zn (zinc) or chromate on the surface for heat resistance or rust prevention purposes can be used. For the purpose of characteristics, any of trace amounts of other elements such as S η (tin) is added. Although the thickness of the copper foil is not particularly limited, from the viewpoint of operability, it is preferably 10 μm to 100 μm. The wiring board material of the present invention is characterized in that an insulating material layer is formed on the other surface of the copper foil of the thin film composite material of the present invention, and a conductor layer is formed on the surface of the second composite metal oxide thin film layer. As the insulating material for the insulating material layer, a known material can be used as a material for a wiring board, and the conductor layer can be formed by a known metal layer forming method such as a plating method, a vapor deposition method, or a sputtering method. The wiring board of the present invention is characterized in that an insulating material layer is formed on the other surface of the copper foil of the thin film composite material of the present invention, and a conductor pattern is formed on the surface of the second composite metal oxide thin film layer. The conductor pattern can be formed by a known metal layer forming means such as a plating method, a vapor deposition method, and a sputtering method, and a known etching method. -14- 200529251 (11) The material for electronic parts of the present invention is characterized in that a bulk layer is formed on the surface of the second composite metal oxide thin film layer of the thin film composite material of the present invention. The electronic part of the present invention is characterized in that an insulating material layer is formed on the other surface of the copper foil of the thin film composite material of the present invention, and a capacitor electrode is formed on the surface of the second composite metal oxide thin film layer. As the insulating material for the insulating material layer, a known material can be used as a material for electronic parts. The capacitor electrode can be formed by a known metal layer forming method such as a plating method, a vapor deposition method, or a swing method, and a known etching method. ® The wiring board materials, wiring boards, electronic parts materials, and electronic parts of the present invention can be bonded to other substrates by using known adhesives, adhesive sheets, or prepreg adhesive materials, etc., to make them multilayered to make capacitors. Functions of multilayer wiring boards and electronic parts. Further, a multilayer wiring board in which the capacitor is buried in the inner layer can be provided by further lamination. Next, several aspects of the thin film composite material of the present invention and the wiring board of the present invention will be described using drawings. Φ Figure 1 is a cross-sectional view illustrating an embodiment of the thin film composite material of the present invention. Moreover, although it is described here, the cross-sectional view used in this specification is a paradigm diagram after all, and it is described to clearly understand the layered structure. Therefore, the thickness of each layer in the '' diagram does not correspond to the thickness of the actual product. Thin film composite material 1 includes a second composite metal oxide thin film layer which must contain Ba and / or Sr, Ti as constituent elements, and 2 is oxidized by an amorphous composite metal containing Ba and / or Sr, Ti as constituent elements. The first composite metal oxide thin film layer 3, the metal thin film layer 4, and the copper foil 5 are made of an object. Here, -15-200529251 (12) The second composite metal oxide thin film layer 2 is composed of a crystalline domain 2 a and an amorphous domain 2 b. Fig. 2 is a cross-sectional view illustrating another embodiment of the thin film composite material of the present invention. The second composite metal oxide thin film layer 6 must be stacked to contain Ba and / or Sr, Ti as a constituent element, a composite metal oxide thin film layer 6a including a crystalline field and an amorphous field, and Ba and / or as a constituent element. Another composite metal oxide thin film layer 6b composed of an amorphous composite metal oxide of Sr and Ti. Fig. 3 is a sectional view illustrating still another embodiment of the film composite material of the present invention. The second composite metal oxide thin film layer 7 is composed of a composite metal oxide thin film layer 7 containing Ba and / or Sr, Ti as constituent elements and including a crystalline field and an amorphous field, and a constituent element including a crystalline field and an amorphous field. And / or another composite metal oxide thin film layer 7b having a composition different from 7 a and other composite metal oxide thin film layers 7 c consisting of constituent elements and / or amorphous composite metal oxides having a composition different from 7 a and 7 b FIG. 4 is a cross-sectional view illustrating an embodiment of a wiring board including a thin film composite material of the present invention in its configuration. The wiring board 8 includes electrodes 2 and a thin film composite material 9 of the present invention and a substrate 10 laminated with an adhesive sheet 11 and further formed on the substrate by, for example, an electroplating method, a vapor deposition method, a sputtering method, etching, or a combination thereof. The second composite metal oxide thin film layer 9a of the thin film composite material 9 of the present invention; and the capacitor is formed by etching or the like to form a copper foil 9d contained in the thin film composite material 9 of the present invention to oppose the electrode 1 2 of the electrode 1 3 As a constituent electrode. In addition, unnecessary portions of the second composite metal oxide thin film layer, the first -16-200529251 (13) composite metal oxide thin film layer 9b, and the metal thin film layer 9c are removed by uranium etching or the like. Next, although the present invention is specifically described by way of examples, the present invention is not limited thereto. (Example 1) Ba (OC2H5) 2 and Ti (0-i-C3H7) 4 were dissolved in 2-methoxyethanol dehydrated by a molecular sieve, so that the molar ratio of Ba to Ti was 1: 1, and 0.6 was obtained. M solution. Next, while stirring the solution, it was refluxed at 12 CTC for 18 hours to obtain a solution A of a composite metal alkoxide: BaTi (OC2H4 OC2H3) 6. Next, a part of the solution A diluted with 2-methoxyethanol was obtained, and a solution B having a solution concentration of 0.2 M was obtained. On the other hand, water having a ratio of 1: 1 to Ti and ammonia of 1: 0.15 were added to a part of the solution A, stirred at 100 ° C for 3 hours, and then diluted with 2-methoxyethanol. It became 0.2M, and the solution C containing the crystalline metal oxide particle was obtained. The two solutions B and C prepared as 0.2 M were mixed in a volume ratio of 1: 1 to obtain a solution D (total of composite metal alkoxy compounds / crystalline metal oxide particles 50 mol% / 50 mol. %). On the other hand, a thickness of 10 cm × 10 cm and a thickness of 70 μm copper foil (for example, 3 EC — VLP — 70 made by Mitsui Metals Mining Co., Ltd.) is formed by a sputtering method to a thickness of 5 00 nm Ni thin film layer to obtain a copper foil with a Ni thin film layer. Next, the solution B was spin-coated on the side of the Ni film layer of the copper foil with the Ni film layer. After drying on a hot plate at 350 ° C for 4 minutes, the coating solution B was rotated again and dried in the same manner to form a first composite metal oxide layer. Further, spin coating solution D was repeatedly applied on the first composite metal oxide layer, and the same drying operation was performed 8 times to form a second composite metal oxide layer. Thereafter, it was fired on a hot plate at 350 ° C for 2 hours to obtain a thin film composite material 1. (Comparative Example 1) The type of the metal thin film layer formed on the surface of the copper foil was changed from pt to pt, and the others were the same as in Example 丨 to obtain a thin film composite material 2. ® (Comparative Example 2) Ni B was not formed.

(Comparative Example 3) The spin coating of the solution B was omitted, and the thin film composite 4 was used. Others are the same as in Example. (Example 2) 5 Γ, r

Formed on the surface of copper foil: Others are the same as in Example 丨, (Example 3) -18- 200529251 (15) The number of spin coatings of solution B was changed from 2 to 6 times, and the others were the same as in Example 1 to obtain a thin film composite Material 6. (Example 4) The number of spin coatings of solution D was changed from 8 times to 24 times, and the others were the same as in Example 1 to obtain a thin film composite material 7. (Example 5) Sr (〇C2H5) 2 and Ti (〇 ～ 卜 c3H7) 4 were dissolved in 2-methoxyethanol dehydrated with a molecular sieve so that the molar ratio with Ti was 1.1, and 0.6 M was obtained. The solution. Next, while stirring the solution, it was refluxed at 120 ° C for 18 hours to obtain a solution E of a composite metal compound: S r T i (〇C2H4 OCH3) 6. Next, a part of the solution e diluted with 2-methoxyethanol was obtained, and a solution F having a solution concentration of 0.2 M was obtained. On the other hand, water having a ratio of 1: 1 to T i and 1 ·· 0 · 15 of ammonia were added to a part of the solution e, and the mixture was stirred at 100 ° C for 3 hours, followed by 2-methoxy Diluted with ethanol to 0.2 M to obtain a solution G containing crystalline metal oxide particles. The two solutions F and G prepared at a volume ratio of 1: 2 were mixed to obtain a solution Η (total of composite metal alkoxy compounds / crystalline metal oxide particles == 50 mol% / 50mol%).

On the other hand, a thickness of 10 cm × 10 cm and a thickness of 70 μm (for example, 3EC—vLP — 7 by Mitsui Metals Mining Co., Ltd.) is used to form a thickness of 5 on the shiny side by a sputtering method. A Ni thin film layer of 0 0 nm, to obtain a copper foil with a NJ 200529251 (16) thin film layer. Next, the n i film of the copper foil with the N i film layer was coated with the solution F. The coating solution F was dried by drying on a hot plate at 350 ° C for 4 minutes and dried similarly to form a first composite metal. The coating solution was further spin-coated on the second oxide layer, and the same drying operation was performed. Eight times, a second compound layer was formed. Thereafter, the composite material 8 was fired on a hot plate at 350 ° C for 2 hours. (Example 6) Ba (〇C2H5) 2 and Sr (OC2H5) 2 and C3H7) 4 were dissolved in a 2-methoxyethylg dehydrated molecular sieve with a molar ratio of Sr to Ti of 1: 1 to obtain 0. 6M times, while stirring this solution, while refluxing at 120 ° C for 1 time to obtain a composite metal alkoxy compound: BaG.5Sr0.5Ti (OC2H4 solution I. Second, a solution of 2-methoxyethanol diluted solution I was obtained The solution concentration was 0.2M solution J. On the other hand, water with an addition force of 1: 1 and ammonia of 1: 0.15 were stirred under a portion of solution 1 for 3 hours, and then diluted with 2-methoxyethanol. The solution K ° containing crystalline metal oxide particles is mixed in a volume ratio with the two solutions J and solution L prepared as 0.2M (the total of the composite metal alcohol alkoxide 7 crystalline gold two 50 mol% / 5〇mol%). After spin coating on the side of the layer, spin the oxide layer again. A composite metal and metal oxide were obtained to obtain a thin film.

Ti (Ο-i-i, make Ba, a solution. 8 hours to obtain a part of 〇CH3) 6, the ratio of α to τη, at 100 ℃ 0.2 Μ, to obtain 1: 1 K, to obtain a solution Metal oxide particles 200529251 (17) In terms of force, the copper foil with a size of 10cm x 1〇 1 and a thickness of 70μm (for example, 3EC-vLP- 7 made by Mitsui Metals Mining Co., Ltd.) A Ni thin film layer with a thickness of 500 nm was formed on the glossy surface side of) to obtain a copper foil with a Nj thin film layer. Next, the coating solution J was spin-coated on the film layer side of the copper foil with the Ni film layer. After drying on a hot plate at 350 ° C for 4 minutes, the coating solution J was rotated again and dried in the same manner to form a first composite metal oxide layer. Further, the spin coating solution L was repeatedly applied on the first composite metal oxide layer, and the same drying operation was performed 8 times to form a second composite metal oxide layer. Thereafter, it was fired on a hot plate of 350,000 tons for 2 hours to obtain a thin film composite material 9. (Example 7) Instead of the Ni thin film layer, a 600 nm Ni-p thin film having a content of 93% by weight was formed by an electroplating method (for example, electroless plating using ICP Niclone U manufactured by Okano Pharmaceutical Industry Co., Ltd.), The same as in Example 1 was obtained to obtain a thin film composite material i 0. The upper electrode was formed from the steamed ore of Au in 1 × 1, and the composite metal oxide thin film layer of each thin film composite material 1 ~ 丨 was obtained in this way. Then the upper electrode was excavated with a diamond pen. The nearby composite metal oxide thin film layer and metal thin film layer exposed the copper foil, and used this as the lower part of the battery to measure the capacitance of the capacitor as the capacitance of the capacitor. The capacitance was measured using a 42 8 5 type A precision LCR meter manufactured by Agilent Technology Co., Ltd. to measure the radon at a frequency of 1 MHz (thousands -21-200529251 (18) Hz) at 25 ° C. The upper electrode and the lower electrode group at 30 places were fabricated and measured. Another 5 uses a focused ion beam processing device (FIB) to excavate each thin film composite material 1 to 10, and observe the exposed cross section by a scanning ion microscope to measure the thickness of the composite metal oxide thin film layer and the metal thin film layer in the thin fe composite material. Further, a transmission electron microscope (TEM) was used to observe a dark field image on the cross section of the thin composite metal oxide layer, and to observe the presence or absence of a crystal field. The results are compiled and displayed in a table! .

-22- 200529251 (19) Table 1 TEM observation results Layer thickness (nm) Thin film compound capacitance Metal film layer Second composite first composite Second composite gold First composite gold metal composite material ratio (pF) Metal type metal Metal oxide Oxide oxide layer oxide layer film layer layer layer 1 29 740 Ni crystalline + amorphous only amorphous 400 80 500 cannot be measured 2 0 (fracture) Pt crystalline + amorphous only amorphous 400 80 500 cannot Measurement 3 0 (Continuity) — crystalline + amorphous only 400 80 — 4 3 630 Ni crystalline + amorphous 400 500 5 27 580 Cr crystalline + amorphous only 400 400 50 50 6 30 390 Ni crystalline + amorphous only Amorphous 400 240 500 7 30 350 Ni Crystal + Amorphous Only Amorphous 1200 80 500 8 28 460 Ni Crystal + Amorphous Only Amorphous 400 80 500 9 27 900 Ni Crystal + Amorphous Only Amorphous 400 80 500 10 28 890 Ni-P alloy crystalline + amorphous only amorphous 400 80 600 -23- 200529251 (20) In Table 1, the yield shows the number of measurable static capacitances in each of the 30 capacitors made. In addition, the capacitance shows the average 値 of the measurable capacitor. From Table 1, it can be known that 'the examples of the present invention (thin film composite materials 1, 5, 6, 7, 8, 9, and 10) all obtained capacitors having a large static capacitance. Comparative Example (Thin Film Composite 2) The metal thin film layer and the composite metal oxide thin film layer were fractured, and a capacitor could not be formed. In Comparative Example 2 (thin film composite 3), no metal thin film layer was formed, so the insulation was low, and the capacitance could not be measured. Since Comparative Example 3 (thin-film composite material 4) did not form the first composite metal oxide layer composed of an amorphous composite metal oxide, the insulating properties were low and the yield was not good. (Example 8) A wiring board was produced using the thin-film composite material 1 of Example 1 described above. Adhesive sheet (GF-3600, manufactured by Hitachi Chemical Industries, Ltd.) was used to bond the copper foil side of film composite material 1 and a copper-clad laminate (MCL-BE-67G (H), manufactured by Hitachi Chemical Industries, Ltd.), A multilayer plate M was obtained. Adhesive conditions are under high temperature vacuum pressure to a temperature of 175. (:, Pressure iMPa (kPa) crimping for 1 hour. Next, a 0.5 μm-thick Ni—P thin film layer formed on the multilayer plate μ by electroless Ni—P plating] was the second thin film composite material] The surface on the side of the composite metal oxide thin film layer is followed by the {{__ power supply layer}, which forms a Cu thick film with a thickness of 20 μηα from copper ore. Secondly, an alkaline developing resist is formed by photolithography (Hitachi Kasei Co., Ltd. 9—904), engraved with a 10% by weight ferric chloride aqueous solution-24-200529251 (21)

The Cu thick film and Ni-P thin film layer form the upper electrode of the capacitor. After the anti-uranium agent was stripped with a 5% by weight sodium hydroxide aqueous solution, a photolithography method was used again to form an alkaline developing resist to add 0. The first and second composite metal oxide thin film layers were etched with 30% by weight of hydrogen peroxide in water by 1 M of ethylamine tetraacetic acid · sodium salt (EDTA · 2Na). After stripping the anti-uranium agent with a 5% by weight sodium hydroxide aqueous solution, an alkaline developing resist was formed again by photolithography, and the Ni—P thin film layer and copper were etched with a 10% by weight ferric chloride aqueous solution. The foil forms the lower electrode and wiring layer of the capacitor. The resist was stripped with a 5 wt% sodium hydroxide aqueous solution to obtain a multilayer wiring board including a capacitor. The capacitance of this capacitor was measured at a frequency of 1 MHz at 25 ° C using a 4 2 8 5 A precision .LCR meter manufactured by Agilent Technology. All 30 capacitors can be measured, and the average 値 is 720PF (pico faraday). (Example 9) A wiring board was produced using the thin-film composite material 9 of Example 6 described above. A 0.5 μm-thick Ni—P thin film layer was formed on the surface of the second composite metal oxide thin film layer side of the thin film composite material 9 by electroless Ni-P plating, followed by 'using this as a power supply layer and forming it by copper plating. Cu thick film with a thickness of 20 μm. Next, 'adhesive sheet (Hitachi Chemical Industry Co., Ltd. 0F-3,600) was used to bond the copper foil side of the thin film composite material 9 and the copper-clad laminate (referred to as MCL-BE-67G) (H)) to obtain a multilayer board N. Adhesive conditions are crimping under high temperature vacuum pressure for 1 hour at a temperature of 17 5 -25- 200529251 (22) ° C and a pressure of 1 MPa (kPa). Next, an alkaline developing resist (， -9040 manufactured by Hitachi Chemical Industries, Ltd.) was formed by photolithography, and a Cii thick film and a Ni-P thin film layer were etched with a 10% by weight ferric chloride aqueous solution. Form the upper electrode of the capacitor. After stripping the resist with a 5% by weight aqueous sodium hydroxide solution, the photolithography method was used to form an alkaline developing resist 1J again, and 0.1 M of ethylamine tetraacetic acid · sodium salt (EDTA · 2Na) 30% by weight of hydrogen peroxide in water and uranium is etched into the first and second composite metal oxide thin film layers. After stripping the resist with a 5% by weight sodium hydroxide aqueous solution, the photolithography method was used to form an alkaline developing resist. The Ni-P thin film layer and copper were etched with a 10% by weight ferric chloride aqueous solution. The foil forms the lower electrode and wiring layer of the capacitor. The resist was removed with a 5% by weight sodium hydroxide aqueous solution to obtain a multilayer wiring board including a capacitor. The static capacitance of this capacitor was measured at a frequency of 1 MHz at 25 t using a 428 5A type precision LCR meter manufactured by Agilent Technologies. It can be measured for 29 out of 30 capacitors, with an average 値 of 8 9 5 p F. The practitioner should understand that the foregoing is a preferred embodiment of the present invention, and that many changes and modifications can be implemented without departing from the spirit and scope of the present invention. [Brief Description of the Drawings] FIG. 1 is a cross-sectional view illustrating an embodiment of the present invention. Fig. 2 is a sectional view showing another embodiment of the present invention. FIG. 3 is a cross-sectional view illustrating still another embodiment of the present invention. Fig. 4 is a cross-sectional view illustrating an embodiment of a wiring board including a thin film composite material of the present invention in its configuration. -26- 200529251 (23) [Description of main component symbols] 1 Thin film composite material 2 Second complex α metal oxide thin film layer 2a Crystal field 2b Amorphous field 3 First composite metal oxide film layer 4 Metal film layer 5 Copper foil 6 Second composite metal oxide thin film layer 6a, 6 b Composite metal oxide thin film layer

7 Second composite metal oxide film layer 7a, 7b, 7c Composite metal oxide film layer 8 Wiring board 9 Thin film composite material

9a Second composite metal oxide thin film layer 9b First composite metal oxide thin film layer 9c Metal thin film layer 9d Copper foil 10 Substrate 11 Adhesive sheet 12 " 13 Electrode -27-

Claims (1)

200529251 (1) X. Patent application scope 1 · A thin film composite material, which is characterized by having: a copper foil; a metal thin film layer formed on one of the surfaces of the foregoing copper foil and containing a material selected from the group consisting of Cr, Ni, Au, and Ag One or more metals in the group consisting of alloys and alloys thereof; the first composite metal oxide thin film layer is formed on the surface of the aforementioned metal thin film layer and is oxidized by an amorphous composite metal containing Ba and / or Sr, Ti as constituent elements And a first composite metal oxide thin film layer formed on the surface of the first composite metal oxide thin film layer and including at least a crystalline metal oxide containing Ba and / or Sr and Ti as constituent elements. 2. The thin film composite material according to item 1 of the scope of the patent application, wherein the thickness of the metal thin film layer is in the range of 50 nm to 1 μm. 3. The thin film composite material according to item 1 or 2 of the scope of application for a patent, wherein the thickness of the first composite metal oxide thin film layer is in a range of 10 nm to 2000 nm. 4. The thin film composite material according to item 1 or 2 of the scope of patent application, wherein the sum of the thickness of the first composite metal oxide thin film layer and the thickness of the second composite metal oxide thin film layer is in a range of 30 nm to. 5. The thin film composite material described in item 1 or 2 of the scope of the patent application, wherein the second composite metal oxide thin film layer further includes an amorphous composite metal oxide containing B a and / or sr, τ 丨 as constituent elements. Thing. -28- 200529251 (2) 6. A wiring board material characterized by forming an insulating material layer on the other surface of the copper foil of the thin film composite material, and forming a surface of the second composite metal oxide thin film layer. Conductor layer, the thin film composite material has a copper layer, a metal rhenium layer, is formed on one surface of the copper box, and contains a group selected from the group consisting of Cr, Ni, Au, Ag, and alloys thereof More than one metal; a first composite metal oxide thin film layer formed on the surface of the aforementioned metal thin film layer, and composed of an amorphous composite metal oxide containing Ba and / or Sr, Ti as constituent elements; and a second composite The metal oxide thin film layer is formed on the first composite metal oxide thin film layer, and includes at least a crystalline metal oxide containing Ba and / or Sr and Ti as constituent elements. 7. The material for a wiring board according to item 6 of the scope of patent application, wherein the thickness of the metal thin film layer is in a range of 50 nm to 1 μm. 8. The material for a wiring board according to item 6 or 7 of the scope of the patent application, wherein the thickness of the first composite metal oxide thin film layer is in a range of 10 nm to 2000 nm. 9 · The wiring board material according to item 6 or 7 of the scope of the patent application, wherein the sum of the thickness of the first composite metal oxide thin film layer and the thickness of the first composite metal oxide thin film layer is 30 nm to 2 μm range. 1 〇 The material for a wiring board according to item 6 or 7 of the scope of the patent application, wherein the second composite metal oxide thin film layer further includes an amorphous composite metal oxide containing Ba and / or Sr and Ti as constituent elements. Thing. -29- 200529251 (3) 1 1 · A wiring board characterized in that an insulating material layer is formed on the other surface of the copper foil of the thin film composite material, and a conductor pattern is formed on the surface of the second composite metal oxide thin film layer. Type, the thin film composite material has: a copper foil; a metal thin film layer formed on one of the surfaces of the foregoing copper foil and containing * more than one metal in a group consisting of Cr, Ni, Ail, Ag, and alloys thereof The first composite metal oxide thin fl layer is formed on the surface of the aforementioned metal thin film layer and is composed of an amorphous composite metal oxide containing Ba and / or Sr, Ti as constituent elements; and a second composite metal oxide The thin film layer is formed on the surface of the first composite metal oxide thin film layer, and includes at least a crystalline metal oxide containing B a and / or S r and Ti as constituent elements. 1 2. The wiring board according to item 11 of the scope of patent application, wherein the thickness of the metal thin film layer is in a range of 50 nm to 1 μm. 1 3 · The wiring board as described in item 11 or 12 of the scope of patent application, wherein the thickness of the first composite metal oxide thin film layer is in the range of 10 nm to 2 0 0 nm. 0 · 4 The wiring board according to item 1 or 12, wherein the sum of the thickness of the first composite metal oxide thin film layer and the thickness of the second composite metal oxide thin film layer is in a range of 30 nm to 2 μm. 15 · The wiring board according to item 11 or 12 in the scope of the patent application, wherein the second composite metal oxide thin film layer further includes an amorphous composite metal oxide containing Ba and / or Sr, Ti as constituent elements. Thing. 1 ··· A material for electronic parts, characterized in that a conductor layer is formed on the surface of the second composite metal oxide thin film layer of the thin film composite material. -30- 200529251 (4) The thin film composite material has: copper foil; A metal thin film layer is formed on one of the surfaces of the aforementioned copper layer, and contains 'one or more metals selected from the group consisting of Cr, Ni, An, Ag, and alloys thereof; the first composite metal oxide thin film layer' is opened ^ It is formed on the surface of the metal thin film layer and is composed of an amorphous composite metal oxide containing Ba and / or Sr and Ti as constituent elements; and a second composite metal oxide thin film layer is formed on the first composite metal oxide. The surface of the thin film layer contains at least a crystalline metal oxide containing Ba and / or Sr and Ti as constituent elements. 17 · The material for electronic parts as described in item 16 of the scope of patent application, wherein the thickness of the aforementioned metal thin film layer is in a range of 50 nm to 1 μm. 18. The material for electronic parts according to item 16 or 17 of the scope of patent application, wherein the thickness of the first composite metal oxide thin film layer is in a range of 10 nm to 200 nm. 19. The material for electronic parts according to item 16 or 7 of the scope of the patent application, wherein the sum of the thickness of the first composite metal oxide thin film layer and the thickness of the second composite metal oxide thin film layer is 3 〇nm ~ 2 ^ cut range. 20. The material for electronic parts according to item 16 or I? Of the scope of the patent application, wherein the second composite metal oxide thin film layer further includes an amorphous composite containing Ba and / or Sr and Ti as constituent elements. Gold_ oxide. 2 1. An electronic component, characterized in that an insulating material layer is formed on the other surface of the copper foil of the thin film composite material, and a capacitor electrode is formed on the surface of the second composite gold oxide film layer, and the thin film composite Material money 200529251 (5): copper foil; metal thin film layer formed on one of the surfaces of the aforementioned copper foil and containing one or more metals selected from the group consisting of Cr, Ni, An, Ag, and alloys thereof; A composite metal oxide thin film layer is formed on the surface of the foregoing metal thin film layer, and is composed of an amorphous composite metal oxide containing Ba and / or Sr, Ti as constituent elements, and a second composite metal oxide thin film layer ' It is formed on the surface of the first composite metal oxide thin film layer, and includes at least a crystalline metal oxide containing Ba and / or Sr and Ti as constituent elements. 22. The electronic component according to item 21 of the scope of patent application, wherein the thickness of the metal thin film layer is in a range of 50 nm to 1 μm. 23. The electronic component as described in claim 21 or 22, wherein the thickness of the first composite metal oxide thin film layer is in the range of 10 nm to 2000 nm. 2 4 · The electronic component described in item 21 or 22 of the scope of the patent application, wherein the sum of the thickness of the first composite metal oxide thin film layer and the thickness of the second composite metal oxide thin film layer is 30 nm to 2 μηι range. 2 5 · The electronic component described in item 21 or 22 of the scope of the patent application, wherein the second composite metal oxide thin film layer further includes an amorphous composite metal oxide containing Ba and / or Sr, Ti as constituent elements. Thing. 2 6. —A method for manufacturing a rhenium film composite material, comprising: forming on one surface of a copper foil a material containing Cr, Ni, Au, Ag, and -32-200529251 (6) A step of forming a metal thin film layer of one or more metals in the group; forming a first composite metal oxide thin film composed of an amorphous composite metal oxide containing Ba and / or Sr, Ti as constituent elements on the surface of the metal thin film layer A step of forming a layer; and forming a second composite metal oxide thin film layer containing at least a crystalline metal oxide containing B a and / or S r and Ti as constituent elements on the surface of the first composite metal oxide thin film layer. Step: At least in the foregoing first step of forming the composite metal oxide thin film layer, heat treatment is performed at a temperature of 400 ° C or lower. 27. The method for manufacturing a thin-film composite material according to item 26 of the scope of the patent application, wherein the thickness of the aforementioned metal thin-film layer is in a range of 50 nm to 1 μm. 28. The method for manufacturing a thin film composite material according to item 26 or 27 of the scope of the patent application, wherein the thickness of the first composite metal oxide thin film layer is in the range of 10 nm to 200 nm. 2 9. The method for manufacturing a thin-film composite material according to item 26 or 27 of the scope of application for a patent, wherein the total thickness of the first composite metal oxide thin film layer and the second composite metal oxide thin film layer is 3 0nm ~ 2μηη range are formed separately. 30. The method for manufacturing a thin film composite material according to item 26 or 27 of the scope of the patent application, wherein the second composite metal oxide thin film layer further includes an amorphous composite containing Ba and / or Sr, Ti as constituent elements. Metal oxide. -33- 200529251 (7) 3 1. A method for manufacturing a wiring board material, characterized in that it comprises: forming on a surface of a copper alloy a material containing a material selected from the group consisting of Cr, Ni, Au, Ag and its alloys A step of forming a metal thin film layer of one or more metals in the group;-forming a first composite metal oxide composed of an amorphous composite metal oxide containing Ba. And / or Sr, Ti as a constituent element on the surface of the metal thin film layer; Step of forming a thin film layer; φ forming a second composite metal oxide thin film layer containing at least a crystalline metal oxide containing Ba and / or Sr, Ti as constituent elements on the surface of the first composite metal oxide thin film layer. A step of forming an insulating material layer on the other surface of the copper foil; a step of forming a conductor layer on the surface of the second composite metal oxide film layer; at least in the first composite metal oxide film layer forming step , Heat treatment below 40CTC. φ 3 2 · The method for manufacturing a wiring board material according to item 31 of the scope of patent application, wherein the thickness of the aforementioned metal thin film layer is in a range of 50 nm to 1 μm. 3 3 · The method for manufacturing a wiring board material according to item 31 or 32 of the scope of application for a patent, wherein the thickness of the first composite metal oxide thin film layer is in the range of 10 nm to 200 nm. 3 4. The method for manufacturing a wiring board material according to item 31 or 32 of the scope of the patent application, wherein the thickness of the first composite metal oxide film layer -34- 200529251 (8) is the same as that of the second composite The total thickness of the metal oxide thin film layer is formed separately in a range of 30 nm to 2 μm. 35. The method for manufacturing a material for a wiring board according to item 31 or 32 in the scope of the patent application, wherein the second composite metal oxide thin film layer further contains Ba and / or Sr, Ti as constituent elements. Amorphous composite metal oxide. 3 6. A method for manufacturing a wiring board, comprising: forming a metal thin film containing one or more metals selected from the group consisting of Cr, Ni, Au, Ag, and an alloy thereof on one surface of a copper foil; A step of forming a layer; a step of forming a first composite metal oxide thin film layer composed of an amorphous composite metal oxide containing Ba and / or Sr and Ti as constituent elements on the surface of the metal thin film layer; on the first composite metal A step of forming a second composite metal oxide thin film layer including at least a crystalline metal oxide of B a and / or S r and Ti as constituent elements on the surface of the oxide thin film layer; and forming the second composite metal oxide thin film layer on the other surface of the copper foil An insulating material layer step; and a step of forming a conductor pattern on the surface of the second composite metal oxide thin film layer; at least in the first composite metal oxide thin film layer forming step, heat treatment is performed at 40 CTC or less. 37. The method for manufacturing a wiring board according to item 36 of the scope of patent application, wherein the thickness of the aforementioned metal thin film layer is in a range of 50 nm to 1 μm. -35- 200529251 (9) 3 8. The method for manufacturing a wiring board according to item 36 or 37 of the scope of application for a patent, wherein the thickness of the aforementioned first composite metal oxide film layer is in a range of 10 nm to 200 nm. 39. The method for manufacturing a wiring board according to item 36 or 37 in the scope of the patent application, wherein the total thickness of the first composite metal oxide thin film layer and the thickness of the second composite metal oxide thin film layer is Formed in the range of 30nm to 2 μm. 40. The method for manufacturing a wiring board according to item 36 or 37 of the scope of the patent application, wherein the second composite metal oxide thin film layer further includes an amorphous material containing B a and / or S r and Ti as constituent elements. Composite metal oxide. 4 1 · A method for manufacturing a material for electronic parts, comprising: forming on a surface of a copper foil a metal containing one or more metals selected from the group consisting of Cr, Ni, Au, Ag, and alloys thereof A step of forming a thin film layer; a step of forming a first composite metal oxide thin film layer composed of an amorphous composite metal oxide containing B a and / or Sr and Ti as constituent elements on the surface of the thin metal layer; and A step of forming a second composite metal oxide thin film layer on the surface of the first composite metal oxide thin film layer including at least a crystalline metal oxide containing Ba and / or Sr and Ti as constituent elements; and The step of forming a conductor layer on the surface of the metal oxide thin film layer; -36- 200529251 (10) At least the heat treatment is performed at a temperature of 400 ° C or lower in the step of forming the first composite metal oxide thin film layer. 42. The method for manufacturing a material for electronic parts according to item 4 丨 in the scope of the patent application, wherein the thickness of the aforementioned metal thin film layer is within a range of 50 nm to 1 μm. 4 3. The method for manufacturing a material for electronic parts according to item 41 or 42 of the scope of the patent application, wherein the thickness of the aforementioned first composite metal oxide thin film layer is in the range of 10 nm to 200 nm. 44. The method for manufacturing a material for electronic parts as described in item 41 or 42 of the scope of the patent application, wherein the thickness of the first composite metal oxide thin film layer and the thickness of the second composite metal oxide thin film layer are 3 Formed in the range of 0nm ~ 2μm. 4 5 · The method for manufacturing a material for an electronic component as described in item 41 or 42 of the scope of the patent application, wherein the second composite metal oxide thin film layer further includes a layer containing Ba and / or Sr, Ti as constituent elements. Amorphous composite metal oxide. 46 · A method for manufacturing an electronic part, comprising: forming a metal thin film layer containing one or more metals selected from the group consisting of Cr, Ni, Au, Ag, and an alloy thereof on a surface of a copper foil; A step of forming a first composite metal oxide thin film layer composed of an amorphous composite metal oxide containing Ba and / or S r and Ti as constituent elements on the surface of the metal thin film layer; The surface of the metal oxide thin film layer is formed to include at least -37- 200529251 (11) a second composite metal oxide thin film layer containing a crystalline metal oxide containing B a and / or S r, T i as a constituent element Steps: a step of forming a conductor layer on the surface of the second composite metal oxide thin film layer; a step of forming an insulating material layer on the other surface of the copper foil; and a step of forming a capacitor electrode by etching to remove a portion that does not require the conductor layer ; At least in the foregoing first step of forming the composite metal oxide thin film layer, heat treatment is performed at a temperature of 400 ° C or lower. 47. The method for manufacturing an electronic component according to item 46 of the scope of patent application, wherein the thickness of the metal thin film layer is in a range of 50 nm to 1 μm. 4 8. The method for manufacturing an electronic component according to item 46 or 47 of the scope of the patent application, wherein the thickness of the aforementioned first composite metal oxide thin film layer is in a range of 10 nm to 200 nm. 4 9. The method for manufacturing an electronic component according to item 46 or 47 of the scope of the patent application, wherein the thickness of the first composite metal oxide thin film layer and the thickness of the second composite metal oxide thin film layer are 30 nm in total ~ 2 μηι ranges were formed separately. 5 0 · The method for manufacturing an electronic component as described in item 46 or 47 of the scope of the patent application, wherein the second composite metal oxide thin film layer further contains a non-metal containing Ba and / or Si * and Ti as constituent elements. Crystal form composite metal oxide.