DE69508358D1 - Verfahren zur Herstellung eines Silizium-Einkristalles mit verringerten Kristalldefekten - Google Patents

Verfahren zur Herstellung eines Silizium-Einkristalles mit verringerten Kristalldefekten

Info

Publication number
DE69508358D1
DE69508358D1 DE69508358T DE69508358T DE69508358D1 DE 69508358 D1 DE69508358 D1 DE 69508358D1 DE 69508358 T DE69508358 T DE 69508358T DE 69508358 T DE69508358 T DE 69508358T DE 69508358 D1 DE69508358 D1 DE 69508358D1
Authority
DE
Germany
Prior art keywords
producing
silicon single
reduced
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69508358T
Other languages
English (en)
Other versions
DE69508358T2 (de
Inventor
Kiyotaka Takano
Eiichi Iino
Masahiro Sakurada
Hirotoshi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69508358D1 publication Critical patent/DE69508358D1/de
Publication of DE69508358T2 publication Critical patent/DE69508358T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69508358T 1994-12-05 1995-11-29 Verfahren zur Herstellung eines Silizium-Einkristalles mit verringerten Kristalldefekten Expired - Lifetime DE69508358T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30047994A JP3285111B2 (ja) 1994-12-05 1994-12-05 結晶欠陥の少ないシリコン単結晶の製造方法

Publications (2)

Publication Number Publication Date
DE69508358D1 true DE69508358D1 (de) 1999-04-22
DE69508358T2 DE69508358T2 (de) 1999-08-26

Family

ID=17885301

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69508358T Expired - Lifetime DE69508358T2 (de) 1994-12-05 1995-11-29 Verfahren zur Herstellung eines Silizium-Einkristalles mit verringerten Kristalldefekten

Country Status (5)

Country Link
US (1) US5667584A (de)
EP (1) EP0716168B1 (de)
JP (1) JP3285111B2 (de)
KR (1) KR100362021B1 (de)
DE (1) DE69508358T2 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08337490A (ja) * 1995-06-09 1996-12-24 Shin Etsu Handotai Co Ltd 結晶欠陥の少ないシリコン単結晶及びその製造方法
US5840120A (en) * 1996-01-22 1998-11-24 Memc Electronic Materials, Inc. Apparatus for controlling nucleation of oxygen precipitates in silicon crystals
DE19637182A1 (de) * 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte
US5994761A (en) 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
US6379642B1 (en) 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
KR100508048B1 (ko) * 1997-04-09 2005-08-17 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 저결함 밀도 실리콘 잉곳의 제조 방법
CN1316072C (zh) 1997-04-09 2007-05-16 Memc电子材料有限公司 低缺陷密度、理想氧沉淀的硅
JP3919308B2 (ja) * 1997-10-17 2007-05-23 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法ならびにこの方法で製造されたシリコン単結晶およびシリコンウエーハ
JP3346249B2 (ja) * 1997-10-30 2002-11-18 信越半導体株式会社 シリコンウエーハの熱処理方法及びシリコンウエーハ
TW589415B (en) * 1998-03-09 2004-06-01 Shinetsu Handotai Kk Method for producing silicon single crystal wafer and silicon single crystal wafer
JP3621290B2 (ja) * 1998-06-02 2005-02-16 信越半導体株式会社 パーティクルモニター用シリコン単結晶ウエーハの製造方法およびパーティクルモニター用シリコン単結晶ウエーハ
JPH11349393A (ja) * 1998-06-03 1999-12-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法
DE69902911T2 (de) 1998-06-26 2003-01-16 Memc Electronic Materials Widerstandsheizung fur eine kristallzüchtungsvorrichtung und verfahren zu ihrer verwendung
KR20010041957A (ko) 1998-06-26 2001-05-25 헨넬리 헬렌 에프 임의인 대 직경의 무결함 실리콘 결정의 성장 공정
US6828690B1 (en) 1998-08-05 2004-12-07 Memc Electronic Materials, Inc. Non-uniform minority carrier lifetime distributions in high performance silicon power devices
US6236104B1 (en) * 1998-09-02 2001-05-22 Memc Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
US6336968B1 (en) 1998-09-02 2002-01-08 Memc Electronic Materials, Inc. Non-oxygen precipitating czochralski silicon wafers
KR100816696B1 (ko) 1998-09-02 2008-03-27 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 개선된 내부 게터링을 갖는 열어닐된 웨이퍼
WO2000013226A1 (en) 1998-09-02 2000-03-09 Memc Electronic Materials, Inc. Process for preparing an ideal oxygen precipitating silicon wafer
WO2000022197A1 (en) 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Epitaxial silicon wafers substantially free of grown-in defects
EP1125008B1 (de) 1998-10-14 2003-06-18 MEMC Electronic Materials, Inc. Wärmegetempertes einkristallines silizium mit niedriger fehlerdichte
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
JP2000154070A (ja) * 1998-11-16 2000-06-06 Suminoe Textile Co Ltd セラミックス三次元構造体及びその製造方法
US6284384B1 (en) 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
US20030051656A1 (en) 1999-06-14 2003-03-20 Charles Chiun-Chieh Yang Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
US6391662B1 (en) 1999-09-23 2002-05-21 Memc Electronic Materials, Inc. Process for detecting agglomerated intrinsic point defects by metal decoration
KR100745311B1 (ko) * 1999-09-23 2007-08-01 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 냉각 속도를 제어함으로써 단결정 실리콘을 성장시키는초크랄스키 방법
US6635587B1 (en) 1999-09-23 2003-10-21 Memc Electronic Materials, Inc. Method for producing czochralski silicon free of agglomerated self-interstitial defects
KR100327340B1 (ko) * 1999-09-30 2002-03-06 윤종용 웨이퍼 표면 검사방법
US6285011B1 (en) 1999-10-12 2001-09-04 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus
JP2001278692A (ja) * 2000-03-29 2001-10-10 Shin Etsu Handotai Co Ltd シリコンウエーハおよびシリコン単結晶の製造方法
US6835245B2 (en) * 2000-06-22 2004-12-28 Sumitomo Mitsubishi Silicon Corporation Method of manufacturing epitaxial wafer and method of producing single crystal as material therefor
US6599815B1 (en) 2000-06-30 2003-07-29 Memc Electronic Materials, Inc. Method and apparatus for forming a silicon wafer with a denuded zone
US6339016B1 (en) 2000-06-30 2002-01-15 Memc Electronic Materials, Inc. Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
EP1356139B1 (de) * 2001-01-26 2006-08-09 MEMC Electronic Materials, Inc. Silizium mit niedriger defektdichte und mit leerstellendominiertem kern, das im wesentlichen frei von oxidationsinduzierten stapelfehlern ist
US6897084B2 (en) 2001-04-11 2005-05-24 Memc Electronic Materials, Inc. Control of oxygen precipitate formation in high resistivity CZ silicon
US6663709B2 (en) 2001-06-26 2003-12-16 Memc Electronic Materials, Inc. Crystal puller and method for growing monocrystalline silicon ingots
KR101181052B1 (ko) * 2002-11-12 2012-09-07 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 단결정 잉곳을 성장시키는 크리스탈 풀러 및 방법
JP4432458B2 (ja) 2003-10-30 2010-03-17 信越半導体株式会社 単結晶の製造方法
JPWO2005073439A1 (ja) * 2004-02-02 2007-09-13 信越半導体株式会社 シリコン単結晶及びシリコンウェーハ及びそれらの製造装置並びに製造方法
KR101385810B1 (ko) 2006-05-19 2014-04-16 엠이엠씨 일렉트로닉 머티리얼즈, 인크. Ｃｚ 성장 동안에 실리콘 단결정의 측면에 의해 유도되는 응집된 점 결함 및 산소 클러스터 형성을 제어하는 방법
JP2009035481A (ja) * 2008-09-24 2009-02-19 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハ
CN108998829B (zh) * 2017-06-07 2020-12-04 上海新昇半导体科技有限公司 冷却装置、单晶炉和晶棒的冷却方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0639352B2 (ja) * 1987-09-11 1994-05-25 信越半導体株式会社 単結晶の製造装置
JPH02229791A (ja) * 1989-03-03 1990-09-12 Furukawa Electric Co Ltd:The 化合物半導体単結晶製造装置
JPH0365593A (ja) * 1989-08-02 1991-03-20 Nippon Mining Co Ltd 単結晶成長装置
JP2686460B2 (ja) * 1990-03-12 1997-12-08 住友シチックス株式会社 単結晶製造方法
JP3016897B2 (ja) * 1991-03-20 2000-03-06 信越半導体株式会社 シリコン単結晶の製造方法及び装置
JP2509477B2 (ja) * 1991-04-20 1996-06-19 コマツ電子金属株式会社 結晶成長方法及び結晶成長装置
JPH05294783A (ja) * 1992-04-15 1993-11-09 Kawasaki Steel Corp シリコン単結晶の製造装置
JP3207573B2 (ja) * 1993-01-05 2001-09-10 ワッカー・エヌエスシーイー株式会社 単結晶体の製造方法及びその装置

Also Published As

Publication number Publication date
JP3285111B2 (ja) 2002-05-27
DE69508358T2 (de) 1999-08-26
EP0716168B1 (de) 1999-03-17
EP0716168A1 (de) 1996-06-12
JPH08157293A (ja) 1996-06-18
KR960023272A (ko) 1996-07-18
KR100362021B1 (ko) 2003-02-07
US5667584A (en) 1997-09-16

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