DE69508358T2 - Verfahren zur Herstellung eines Silizium-Einkristalles mit verringerten Kristalldefekten - Google Patents

Verfahren zur Herstellung eines Silizium-Einkristalles mit verringerten Kristalldefekten

Info

Publication number
DE69508358T2
DE69508358T2 DE69508358T DE69508358T DE69508358T2 DE 69508358 T2 DE69508358 T2 DE 69508358T2 DE 69508358 T DE69508358 T DE 69508358T DE 69508358 T DE69508358 T DE 69508358T DE 69508358 T2 DE69508358 T2 DE 69508358T2
Authority
DE
Germany
Prior art keywords
producing
silicon single
reduced
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69508358T
Other languages
English (en)
Other versions
DE69508358D1 (de
Inventor
Kiyotaka Takano
Eiichi Iino
Masahiro Sakurada
Hirotoshi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69508358D1 publication Critical patent/DE69508358D1/de
Publication of DE69508358T2 publication Critical patent/DE69508358T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
DE69508358T 1994-12-05 1995-11-29 Verfahren zur Herstellung eines Silizium-Einkristalles mit verringerten Kristalldefekten Expired - Lifetime DE69508358T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30047994A JP3285111B2 (ja) 1994-12-05 1994-12-05 結晶欠陥の少ないシリコン単結晶の製造方法

Publications (2)

Publication Number Publication Date
DE69508358D1 DE69508358D1 (de) 1999-04-22
DE69508358T2 true DE69508358T2 (de) 1999-08-26

Family

ID=17885301

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69508358T Expired - Lifetime DE69508358T2 (de) 1994-12-05 1995-11-29 Verfahren zur Herstellung eines Silizium-Einkristalles mit verringerten Kristalldefekten

Country Status (5)

Country Link
US (1) US5667584A (de)
EP (1) EP0716168B1 (de)
JP (1) JP3285111B2 (de)
KR (1) KR100362021B1 (de)
DE (1) DE69508358T2 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08337490A (ja) * 1995-06-09 1996-12-24 Shin Etsu Handotai Co Ltd 結晶欠陥の少ないシリコン単結晶及びその製造方法
US5840120A (en) * 1996-01-22 1998-11-24 Memc Electronic Materials, Inc. Apparatus for controlling nucleation of oxygen precipitates in silicon crystals
DE19637182A1 (de) * 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte
US5994761A (en) 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
EP1146150B1 (de) 1997-04-09 2010-06-09 MEMC Electronic Materials, Inc. Silicium mit niedriger Fehlerdichte und idealem Sauerstoffniederschlag
SG165151A1 (en) 1997-04-09 2010-10-28 Memc Electronic Materials Low defect density silicon
US6379642B1 (en) * 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
JP3919308B2 (ja) * 1997-10-17 2007-05-23 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法ならびにこの方法で製造されたシリコン単結晶およびシリコンウエーハ
JP3346249B2 (ja) * 1997-10-30 2002-11-18 信越半導体株式会社 シリコンウエーハの熱処理方法及びシリコンウエーハ
TW589415B (en) * 1998-03-09 2004-06-01 Shinetsu Handotai Kk Method for producing silicon single crystal wafer and silicon single crystal wafer
JP3621290B2 (ja) * 1998-06-02 2005-02-16 信越半導体株式会社 パーティクルモニター用シリコン単結晶ウエーハの製造方法およびパーティクルモニター用シリコン単結晶ウエーハ
JPH11349393A (ja) * 1998-06-03 1999-12-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法
WO2000000674A2 (en) 1998-06-26 2000-01-06 Memc Electronic Materials, Inc. Process for growth of defect free silicon crystals of arbitrarily large diameters
EP1090168B1 (de) 1998-06-26 2002-09-11 MEMC Electronic Materials, Inc. Widerstandsheizung fur eine kristallzüchtungsvorrichtung und verfahren zu ihrer verwendung
US6828690B1 (en) 1998-08-05 2004-12-07 Memc Electronic Materials, Inc. Non-uniform minority carrier lifetime distributions in high performance silicon power devices
US6336968B1 (en) 1998-09-02 2002-01-08 Memc Electronic Materials, Inc. Non-oxygen precipitating czochralski silicon wafers
KR100957729B1 (ko) 1998-09-02 2010-05-12 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 이상적 산소 침전 실리콘 웨이퍼의 제조 방법
DE69928434T2 (de) 1998-09-02 2006-07-27 Memc Electronic Materials, Inc. Wärmebehandelte siliziumplättchen mit verbesserter eigengetterung
CN1155074C (zh) * 1998-09-02 2004-06-23 Memc电子材料有限公司 从低缺陷密度的单晶硅上制备硅-绝缘体结构
EP1125008B1 (de) 1998-10-14 2003-06-18 MEMC Electronic Materials, Inc. Wärmegetempertes einkristallines silizium mit niedriger fehlerdichte
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
US6284039B1 (en) 1998-10-14 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafers substantially free of grown-in defects
JP2000154070A (ja) * 1998-11-16 2000-06-06 Suminoe Textile Co Ltd セラミックス三次元構造体及びその製造方法
US6284384B1 (en) 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
US20030051656A1 (en) 1999-06-14 2003-03-20 Charles Chiun-Chieh Yang Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
KR100745311B1 (ko) * 1999-09-23 2007-08-01 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 냉각 속도를 제어함으로써 단결정 실리콘을 성장시키는초크랄스키 방법
US6635587B1 (en) 1999-09-23 2003-10-21 Memc Electronic Materials, Inc. Method for producing czochralski silicon free of agglomerated self-interstitial defects
US6391662B1 (en) 1999-09-23 2002-05-21 Memc Electronic Materials, Inc. Process for detecting agglomerated intrinsic point defects by metal decoration
KR100327340B1 (ko) * 1999-09-30 2002-03-06 윤종용 웨이퍼 표면 검사방법
US6285011B1 (en) 1999-10-12 2001-09-04 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus
JP2001278692A (ja) * 2000-03-29 2001-10-10 Shin Etsu Handotai Co Ltd シリコンウエーハおよびシリコン単結晶の製造方法
US6835245B2 (en) * 2000-06-22 2004-12-28 Sumitomo Mitsubishi Silicon Corporation Method of manufacturing epitaxial wafer and method of producing single crystal as material therefor
US6599815B1 (en) 2000-06-30 2003-07-29 Memc Electronic Materials, Inc. Method and apparatus for forming a silicon wafer with a denuded zone
US6339016B1 (en) 2000-06-30 2002-01-15 Memc Electronic Materials, Inc. Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
KR100805518B1 (ko) * 2001-01-26 2008-02-20 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 산화 유도된 적층 결함을 실질적으로 포함하지 않는베이컨시 지배 코어를 갖는 낮은 결함 밀도의 실리콘
WO2002084728A1 (en) 2001-04-11 2002-10-24 Memc Electronic Materials, Inc. Control of thermal donor formation in high resistivity cz silicon
US6663709B2 (en) 2001-06-26 2003-12-16 Memc Electronic Materials, Inc. Crystal puller and method for growing monocrystalline silicon ingots
EP1560950B1 (de) * 2002-11-12 2008-09-17 MEMC Electronic Materials, Inc. Kristallziehvorrichtung und verfahren zur züchtung einer einkristallstange
JP4432458B2 (ja) 2003-10-30 2010-03-17 信越半導体株式会社 単結晶の製造方法
KR101229067B1 (ko) * 2004-02-02 2013-02-04 신에쯔 한도타이 가부시키가이샤 실리콘 단결정, 실리콘 웨이퍼, 그 제조장치 및 제조방법
KR101385810B1 (ko) 2006-05-19 2014-04-16 엠이엠씨 일렉트로닉 머티리얼즈, 인크. Ｃｚ 성장 동안에 실리콘 단결정의 측면에 의해 유도되는 응집된 점 결함 및 산소 클러스터 형성을 제어하는 방법
JP2009035481A (ja) * 2008-09-24 2009-02-19 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハ
CN108998829B (zh) * 2017-06-07 2020-12-04 上海新昇半导体科技有限公司 冷却装置、单晶炉和晶棒的冷却方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0639352B2 (ja) * 1987-09-11 1994-05-25 信越半導体株式会社 単結晶の製造装置
JPH02229791A (ja) * 1989-03-03 1990-09-12 Furukawa Electric Co Ltd:The 化合物半導体単結晶製造装置
JPH0365593A (ja) * 1989-08-02 1991-03-20 Nippon Mining Co Ltd 単結晶成長装置
JP2686460B2 (ja) * 1990-03-12 1997-12-08 住友シチックス株式会社 単結晶製造方法
JP3016897B2 (ja) * 1991-03-20 2000-03-06 信越半導体株式会社 シリコン単結晶の製造方法及び装置
JP2509477B2 (ja) * 1991-04-20 1996-06-19 コマツ電子金属株式会社 結晶成長方法及び結晶成長装置
JPH05294783A (ja) * 1992-04-15 1993-11-09 Kawasaki Steel Corp シリコン単結晶の製造装置
JP3207573B2 (ja) * 1993-01-05 2001-09-10 ワッカー・エヌエスシーイー株式会社 単結晶体の製造方法及びその装置

Also Published As

Publication number Publication date
US5667584A (en) 1997-09-16
EP0716168B1 (de) 1999-03-17
DE69508358D1 (de) 1999-04-22
KR960023272A (ko) 1996-07-18
EP0716168A1 (de) 1996-06-12
JPH08157293A (ja) 1996-06-18
JP3285111B2 (ja) 2002-05-27
KR100362021B1 (ko) 2003-02-07

Similar Documents

Publication Publication Date Title
DE69508358T2 (de) Verfahren zur Herstellung eines Silizium-Einkristalles mit verringerten Kristalldefekten
DE69621385D1 (de) Verfahren zur herstellung einer halbleiteranordnung mit kristalldefekten
DE69423991D1 (de) Verfahren zur Herstellung eines Siliciumoxidfilmes
DE69604235D1 (de) Verfahren zur herstellung eines siliziumeinkristalles mit niediger fehlerdichte
DE69614609D1 (de) Verfahren zur Herstellung eines Einkristalles
DE69324633T2 (de) Verfahren zur Herstellung eines einkristallinen Dünnfilmes
DE69511743T2 (de) Verfahren zur Herstellung eines einkristallinen dunnen Filmes
DE69635239D1 (de) Verfahren zur Herstellung einer Flüssigkristall-Anzeige
DE69625052T2 (de) Verfahren zur herstellung einer flüssigkristall-anzeige
DE69528611T2 (de) Verfahren zur Herstellung eines Halbleitersubstrates
DE69120326T2 (de) Verfahren zur Herstellung eines Siliziumeinkristalles
DE69707118D1 (de) Verfahren zur herstellung eines glasartikels
DE69506600T2 (de) Verfahren und Tiegel zur Herstellung eines Verbundhalbleiter-Kristalles
DE69934643D1 (de) Verfahren zur herstellung eines einkristalls mit halbleitender zusammensetzung
DE60005985D1 (de) Verfahren zur herstellung eines silizium-einkristalles mit einem gleichmässigen zeittemperaturverlauf
DE59307110D1 (de) Verfahren zur Herstellung eines Anzeigegeräts
DE69426906T2 (de) Verfahren zur Herstellung eineS VerbundglasES
DE69318380T2 (de) Verfahren zur Herstellung eines Orientierungsfilmes
DE69321155D1 (de) Verfahren zur Herstellung eines Monoazofarbstoffes
DE69600781T2 (de) Verfahren zur herstellung eines cristobalit enthaltenden quarzglases
DE69608060D1 (de) Verfahren zur Herstellung eines Oxyd-Kristalls
DE69312582T2 (de) Verfahren zur Herstellung eines Metalloxid-Kristalls
DE69301035T2 (de) Verfahren zur Herstellung eines Silizium-Einkristalls
DE69909544D1 (de) Verfahren zur Herstellung eines Silizium-Einkristalls mittels Czochralski-Verfahren
DE59508662D1 (de) Verfahren zur Herstellung eines Folienverbundes