DE69608060D1 - Verfahren zur Herstellung eines Oxyd-Kristalls - Google Patents

Verfahren zur Herstellung eines Oxyd-Kristalls

Info

Publication number
DE69608060D1
DE69608060D1 DE69608060T DE69608060T DE69608060D1 DE 69608060 D1 DE69608060 D1 DE 69608060D1 DE 69608060 T DE69608060 T DE 69608060T DE 69608060 T DE69608060 T DE 69608060T DE 69608060 D1 DE69608060 D1 DE 69608060D1
Authority
DE
Germany
Prior art keywords
production
oxide crystal
crystal
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69608060T
Other languages
English (en)
Other versions
DE69608060T2 (de
Inventor
Yasuo Namikawa
Xin Yao
Egami Masahiro
Yuh Shiohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Superconductivity Technology Center
IHI Corp
New Energy and Industrial Technology Development Organization
Original Assignee
International Superconductivity Technology Center
IHI Corp
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Superconductivity Technology Center, IHI Corp, Sumitomo Electric Industries Ltd filed Critical International Superconductivity Technology Center
Publication of DE69608060D1 publication Critical patent/DE69608060D1/de
Application granted granted Critical
Publication of DE69608060T2 publication Critical patent/DE69608060T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/729—Growing single crystal, e.g. epitaxy, bulk

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE69608060T 1995-10-06 1996-10-04 Verfahren zur Herstellung eines Oxyd-Kristalls Expired - Fee Related DE69608060T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7260471A JPH09100193A (ja) 1995-10-06 1995-10-06 酸化物結晶の作製方法

Publications (2)

Publication Number Publication Date
DE69608060D1 true DE69608060D1 (de) 2000-06-08
DE69608060T2 DE69608060T2 (de) 2000-11-09

Family

ID=17348416

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69608060T Expired - Fee Related DE69608060T2 (de) 1995-10-06 1996-10-04 Verfahren zur Herstellung eines Oxyd-Kristalls

Country Status (4)

Country Link
US (1) US5851956A (de)
EP (1) EP0767258B1 (de)
JP (1) JPH09100193A (de)
DE (1) DE69608060T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2967154B2 (ja) * 1996-08-02 1999-10-25 同和鉱業株式会社 Ａｇを含み結晶方位の揃った酸化物超電導体及びその製造方法
JP3936767B2 (ja) * 1997-02-21 2007-06-27 財団法人国際超電導産業技術研究センター 酸化物結晶の作製法
JP4109409B2 (ja) * 2000-03-10 2008-07-02 新日本製鐵株式会社 大型超電導体およびその作製方法
EP1391543A1 (de) * 2001-05-15 2004-02-25 International Superconductivity technology Center, The Juridical Foundation Verfahren zur herstellung von oxidkristallfilm; substratverbund und lösung zur verwendung dabei
JP2005289776A (ja) * 2004-04-05 2005-10-20 Canon Inc 結晶製造方法および結晶製造装置
US20060249074A1 (en) * 2005-05-05 2006-11-09 Sumco Corporation Method for supplying hydrogen gas in silicon single-crystal growth, and method for manufacturing silicon single-crystal
US8207099B2 (en) * 2009-09-22 2012-06-26 Afton Chemical Corporation Lubricating oil composition for crankcase applications
US9708728B1 (en) * 2011-07-14 2017-07-18 The Florida State University Research Foundation, Inc. Growth of metal oxide single crystals from alkaline-earth metal fluxes
CN103060914B (zh) * 2012-12-04 2016-01-13 上海交通大学 阶梯型加速缓冷快速生长rebco高温超导块体的方法
CN103014861B (zh) * 2012-12-27 2016-01-13 上海交通大学 宝塔形大尺寸rebco高温超导块体的制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5174926A (en) * 1988-04-07 1992-12-29 Sahagen Armen N Compositions for piezoresistive and superconductive application
US4994781A (en) * 1988-04-07 1991-02-19 Sahagen Armen N Pressure sensing transducer employing piezoresistive elements on sapphire
JP2815280B2 (ja) * 1993-04-16 1998-10-27 財団法人国際超電導産業技術研究センター 酸化物超電導体薄膜の作製方法およびその方法に使用するターゲット

Also Published As

Publication number Publication date
US5851956A (en) 1998-12-22
DE69608060T2 (de) 2000-11-09
JPH09100193A (ja) 1997-04-15
EP0767258B1 (de) 2000-05-03
EP0767258A2 (de) 1997-04-09
EP0767258A3 (de) 1997-09-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER,

Owner name: ISHIKAWAJIMA-HARIMA HEAVY INDUSTRIES CO., LTD., TO

Owner name: NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT O

8339 Ceased/non-payment of the annual fee