DE69301035D1 - Verfahren zur Herstellung eines Silizium-Einkristalls - Google Patents

Verfahren zur Herstellung eines Silizium-Einkristalls

Info

Publication number
DE69301035D1
DE69301035D1 DE69301035T DE69301035T DE69301035D1 DE 69301035 D1 DE69301035 D1 DE 69301035D1 DE 69301035 T DE69301035 T DE 69301035T DE 69301035 T DE69301035 T DE 69301035T DE 69301035 D1 DE69301035 D1 DE 69301035D1
Authority
DE
Germany
Prior art keywords
production
single crystal
silicon single
silicon
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69301035T
Other languages
English (en)
Other versions
DE69301035T2 (de
Inventor
Kiyotaka Takano
Izumi Fusegawa
Hirotoshi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69301035D1 publication Critical patent/DE69301035D1/de
Publication of DE69301035T2 publication Critical patent/DE69301035T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69301035T 1992-01-30 1993-01-28 Verfahren zur Herstellung eines Silizium-Einkristalls Expired - Fee Related DE69301035T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4038394A JP2506525B2 (ja) 1992-01-30 1992-01-30 シリコン単結晶の製造方法

Publications (2)

Publication Number Publication Date
DE69301035D1 true DE69301035D1 (de) 1996-02-01
DE69301035T2 DE69301035T2 (de) 1996-05-02

Family

ID=12524074

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69301035T Expired - Fee Related DE69301035T2 (de) 1992-01-30 1993-01-28 Verfahren zur Herstellung eines Silizium-Einkristalls

Country Status (4)

Country Link
US (1) US5340434A (de)
EP (1) EP0555010B1 (de)
JP (1) JP2506525B2 (de)
DE (1) DE69301035T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5588993A (en) * 1995-07-25 1996-12-31 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
US5814148A (en) * 1996-02-01 1998-09-29 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
US5919303A (en) * 1997-10-16 1999-07-06 Memc Electronic Materials, Inc. Process for preparing a silicon melt from a polysilicon charge
US6284040B1 (en) * 1999-01-13 2001-09-04 Memc Electronic Materials, Inc. Process of stacking and melting polycrystalline silicon for high quality single crystal production
JP2006315869A (ja) * 2005-05-10 2006-11-24 Sumco Corp 窒素ドープシリコン単結晶の製造方法
JP4604889B2 (ja) * 2005-05-25 2011-01-05 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法、並びにシリコン単結晶育成方法
DE102011002598B4 (de) * 2011-01-12 2016-10-06 Solarworld Innovations Gmbh Verfahren zur Herstellung eines Silizium-Ingots
DE102015106979B4 (de) * 2015-05-05 2023-01-12 Infineon Technologies Austria Ag Halbleiterwafer und Verfahren zum Herstellen von Halbleitervorrichtungen in einem Halbleiterwafer
WO2017062949A1 (en) * 2015-10-10 2017-04-13 Sunedison, Inc. System and method for degassing granular polysilicon

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1306407C (en) * 1987-06-08 1992-08-18 Michio Kida Apparatus for growing crystals of semiconductor materials
JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
JPH01282194A (ja) * 1988-01-19 1989-11-14 Osaka Titanium Co Ltd 単結晶製造方法
US5037503A (en) * 1988-05-31 1991-08-06 Osaka Titanium Co., Ltd. Method for growing silicon single crystal
CA1340189C (en) * 1988-10-11 1998-12-15 Albemarle Corporation Polysilicon with diminished hydrogen content
JPH0676274B2 (ja) * 1988-11-11 1994-09-28 東芝セラミックス株式会社 シリコン単結晶の製造装置
EP0388503B1 (de) * 1989-02-03 1993-09-01 Mitsubishi Materials Corporation Verfahren zum Ziehen von Einkristallen
JP2672667B2 (ja) * 1989-08-28 1997-11-05 株式会社東芝 半導体単結晶の引上方法及びその装置
CA2038175A1 (en) * 1990-04-02 1991-10-03 Albemarle Corporation Polysilicon and process therefor
DE4106589C2 (de) * 1991-03-01 1997-04-24 Wacker Siltronic Halbleitermat Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski

Also Published As

Publication number Publication date
DE69301035T2 (de) 1996-05-02
EP0555010B1 (de) 1995-12-20
JP2506525B2 (ja) 1996-06-12
US5340434A (en) 1994-08-23
JPH05208889A (ja) 1993-08-20
EP0555010A1 (de) 1993-08-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee